Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories

Authors :: Puglisi, R.A.
Lombardo, S.
Corso, D.
Gerardi, C.
Crupi, I.
De Salvo, B.
Nicotra, G.
Perniola, L.
Source :: Journal of Applied Physics. Oct 15, 2006, Vol. 100 Issue 8, p086104-1, 3 p.
Publication Year :: 2006
Abstract: The role that the denuded zone around Si nanocrystals obtained by chemical vapor deposition plays on the fluctuations of the dot surface coverage is studied. The relative dispersion of surface coverage for several gate areas is numerically evaluated and the results are compared to those of the fully random case.

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