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Your search keyword '"Sale, T.E."' showing total 96 results
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96 results on '"Sale, T.E."'

2. Carrier screening effects in piezoelectric strained lnGaAs/GaAs quantum wells grown on the (111)B axis

Author

Sale, T.E., Woodhead, J., Rees, G.J., Grey, R., David, J.P.R., Pabla, A.S., Rodriguez-Girones, P.J., Robson, P. N., Hogg, R.A., and Skolnick, M.S.

Subjects
Quantum wells -- Research, Luminescence -- Analysis, Absorption spectra -- Analysis, Shielding (Electricity) -- Analysis, Physics
Abstract

Analysis of carrier screening effects and the excitation-power-dependent blue shifts in electro- and photoluminescence of piezoelectric strained layer multiple quantum wells (MQWs) shows that long-range screening effects are not always responsible for the blue shifts. The analysis also indicates the importance of development of screening due to charge redistribution in the wells. New design rules help apply charge redistribution-induced screening in the wells, enabling rapid recovery.

Published
1994

3. GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates

Author

Tripathy, S., Sale, T.E., Dadgar, A., V.K.X. Lin, Zang, K.Y., Teo, S.L., Chua, S.J., Blasing, J., and Krost, A.

Subjects
Electroluminescence -- Evaluation, Gallium compounds -- Electric properties, Gallium compounds -- Optical properties, Indium -- Electric properties, Indium -- Optical properties, Light-emitting diodes -- Composition, Silicon-on-isolator -- Optical properties, Silicon-on-isolator -- Electric properties, Physics
Abstract

The preparation of InGaN/GaN microdisk light emitting diodes (LEDs) on (111)-oriented nanosilicon-on-insulator (nano-SOI) substrates is demonstrated. The room-temperature electroluminescence (EL) spectrum of microdisk LEDs on SOI showed multiple interference peaks due to the reflections at the Fabry-Perot boundaries, which resulted in an increased integrated EL intensity.

Published
2008

4. Spectroscopic characterization of 1450 nm semiconductor pump laser structures for Raman amplifiers

Author

Constant, S.B., Tomic, S., Lock, D., Sale, T.E., Sweeney, S.J., and Hosea, T.J.C.

Subjects
Raman spectroscopy -- Usage, Quantum wells -- Research, Amplitude modulation -- Research, Semiconductor lasers -- Research, Semiconductor lasers -- Optical properties, Physics
Abstract

A study of the ability of various optical techniques to characterize prefabrication Raman pump laser structure wafers is presented. The study confirms that electromodulated reflectance (ER) is a powerful tool that could be used for postgrowth characterization of Raman pump structures, giving an accurate and complete set of information, prior to actual device fabrication, about the quantum well (QW) thickness, waveguide-core/barrier compositions and built-in fields.

Published
2003

28. Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices

Author

Grey, R., primary, David, J.P.R., additional, Hill, G., additional, Pabla, A.S., additional, Pate, M.A., additional, Rees, G.J., additional, Robson, P.N., additional, Rodriguez-Girones, P.J., additional, Sale, T.E., additional, Woodhead, J., additional, Fisher, T.A., additional, Hogg, R.A., additional, Mowbray, D.J., additional, Skolnick, M.S., additional, Whittaker, D.M., additional, and Willcox, A.R.K., additional

Published
1995
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35. Self-heating effects in red (665 4;nm) VCSELs

Author

Knowles, G., Sweeney, S.J., Sale, T.E., and Adams, A.R.

Abstract

The threshold current (Ith) of GaInP/AlGaInP based vertical cavity surface emitting lasers (VCSELs) is very sensitive to temperature. The extent to which self-heating in a compact VCSEL structure couples with temperature sensitive loss mechanisms is investigated. In particular, the authors consider the strong increase in threshold current (Ith) due to carrier leakage into the X-minima and gain-cavity detuning effects. They find, using two experimental methods and from a thermal model, that the current-induced increase of the active region temperature (ΔT) increases linearly with Ith at a rate of ∼ 14.5 4;K 4;mA−1 over a limited substrate temperature range. They estimate that the additional losses due to self-heating rise from 5% of the total Ith at room temperature (20°C) to 30% at 47°C. To uncouple the effects of leakage and gain-cavity alignment, they have calculated the gain spectra to find the radiative current as a function of temperature. They thus verify that leakage coupled to self-heating is the major cause of the increase in Ith in these devices at room temperature and above. Gain-cavity detuning has minimal effect on Ith due to the broad short wavelength tail of the quantum well gain spectrum.

Published
2001

36. Optical properties of MOVPE grown AlxGa1−xAs quantum wells

Author

Roberts, J.S., David, J.P.R., Chen, Y.H., and Sale, T.E.

Abstract

Photoluminescence measurements have been used to investigate lattice-matched AlxGa1−xAs, x≤ 0.27, and strained Inx(Al0.45Ga0.55)1−xAs quantum wells of dimension 20 to 150 Å with AlxGa1−xAs, x≥ 0.43, barriers. Using highly purified precursors to eliminate oxygen-based impurities, narrow intense 10 K photoluminescence was observed from almost all the quantum wells, down to a wavelength of 613 nm. At very short wavelengths the photoluminescence is found to be controlled by carrier leakage through the indirect AlxGa1−xAs barriers. A 1000 μ× 75 μm laser diode, based on a single In0.19(Al0.45Ga0.55)0.81As quantum well, had a room-temperature threshold current density of 1.27 kA/cm2at a wavelength of 691 nm.

Published
1997
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37. Bistable self-electro-optic operation of strained In[sub 0.1]Ga[sub 0.9]As/GaAs asymmetric....

Author

Sale, T.E., Woodhead, J., Pabla, A.S., Grey, R., Claxton, P.A., Robson, P.N., Moloney, M.H., and Hegarty, J.

Subjects
*ELECTROOPTICS, *LIGHT modulators
Abstract

Examines the bistable self-electro-optic operation of strained In[sub 0.1]Ga[sub 0.9]As/GaAs asymmetric Fabry-Perot modulators. Observation of bistable loops at 949 to 962 nanometers; Effects of bias voltage on bistable loops; Contrast ratio between the on and off states.

Published
1991
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38. Using strained (Al[sub x]Ga[sub 1-x])[sub y]In[sub 1-y]As[sub z]P[sub 1-z] system materials to....

Author

Sale, T.E., Amamo, C., Ohiso, Y., and Kurokawa, T.

Subjects
*QUANTUM wells, *LASERS, *STRAINS & stresses (Mechanics)
Abstract

Computes the optical gain of various quantum wells for use in 850 nanometer lasers. Reduction of radiative current and sheet carrier density; Effect of compressive strain on vertical-cavity surface-emitting lasers and distributed feedback lasers; Dependence of the optimum well on the ultimate material quality.

Published
1997
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39. Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum....

Author

David, J.P.R. and Sale, T.E.

Subjects
*PHOTOLUMINESCENCE, *QUANTUM wells
Abstract

Investigates the photoluminescence (PL) of piezoelectric indium gallium arsenide/gallium arsenide multiquantum well p-i-n structures. Growth of the structures on gallium arsenide substrates; Dependence of the PL on excitation power and barrier width; Causes of the complex behavior of the PL peak position.

Published
1996
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