Carrier screening effects in piezoelectric strained lnGaAs/GaAs quantum wells grown on the (111)B axis

Analysis of carrier screening effects and the excitation-power-dependent blue shifts in electro- and photoluminescence of piezoelectric strained layer multiple quantum wells (MQWs) shows that long-range screening effects are not always responsible for the blue shifts. The analysis also indicates the importance of development of screening due to charge redistribution in the wells. New design rules help apply charge redistribution-induced screening in the wells, enabling rapid recovery.