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Your search keyword '"Sacks, R.N."' showing total 46 results
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46 results on '"Sacks, R.N."'

1. The spectrum of energy levels of the Ga-vacancy/deuterium complexes in p-GaAs

Author

Bonapasta, A. Amore, Bonanni, B., Capizzi, M., Cherubini,L., Emiliani, V., Frova, A., Sacks, R.N., and Sarto, F.

Subjects
Energy levels (Quantum mechanics) -- Research, Gallium arsenide -- Research, Physics
Abstract

Research was conducted on the energy levels of complexes formed by Ga vacancies and deuterium atoms using low-temperature photoluminescence. The datawas limited to a scenario wherein GaAs binds itself to one or more D atoms. Results revealed the presence of optical emissions from the deep acceptor states. D was also found to behave as a donor permittting internal donor-to-vacancy optical transitions.

Published
1993

2. Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

Author

Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A. Amore, Sobiesierski, Z., and Sacks, R.N.

Subjects
Thin films -- Research, Quantum wells -- Research, Hydrogen -- Research, Semiconductors -- Research, Physics
Abstract

Photoluminescence experiments were used to investigate hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells. The results showed that the density of impurities and defects determined the level of volume incorporation of hydrogen. At moderate hydrogen treatment, novel emission bands and passivation of shallow acceptors were observed. Heavy hydrogen treatment produced a deep structure.

Published
1992

28. High-Performance, Metamorphic In[sub x]Ga[sub 1] - xAs Tunnel Diodes Grown by Molecular Beam Epitaxy.

Author

Kwon, O., Jazwiecki, M.M., Sacks, R.N., and Ringel, S.A.

Subjects
TUNNEL diodes, MOLECULAR beam epitaxy, GALLIUM arsenide
Abstract

Thin In[sub x]Ga[sub 1-x]As tunnel junction diodes having compositions from x = 0.53 to 0.75 that span a range of bandgap energies from 0.74 to 0.55 eV, were grown on InP and metamorphic, step-graded In[sub x]Al[sub 1-x]As/InP substrates using molecular beam epitaxy and evaluated in the context of thermophotovoltaic (TPV) applications. Both carbon and beryllium were investigated as acceptor dopants. Metamorphic tunnel diodes with a bandgap of 0.60 eV (x = 0.69) using carbon acceptor doping displayed highest peak current densities, in excess of 5900 A/cm² at a peak voltage of 0.31 V, within a 200 Å total thickness tunnel junction. Identically doped lattice-matched tunnel diodes with a bandgap of 0.74 eV exhibited lower peak current densities of approximately 2200 A/cm² at a higher peak voltage of 0.36 V, consistent with the theoretical bandgap dependence expected for ideal tunnel diodes. Specific resistivities of the 0.60 eV bandgap devices were in the mid-10[sup -5] Ω-cm² range. Together with their 200 Å total thickness, the electrical results make these tunnel junctions promising for TPV applications where low-resistance, thin metamorphic tunnel junctions are desired. [ABSTRACT FROM AUTHOR]

Published
2003
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29. Double-crystal x-ray rocking curve study of (Al,Ga)As:As grown by low temperature molecular beam....

Author

Sacks, R.N. and Carlin, J.A.

Subjects
*LOW temperatures, *GALLIUM arsenide
Abstract

Compares the initial incorporation mechanism of excess arsenic between low temperature grown (LTG) (aluminum,gallium)arsenic and LTG gallium arsenide. Differences in the expansion of lattice parameter; Incorporation of arsenic as small precipitates; Reasons for the different incorporation behaviors.

Published
1997
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31. Dynamics of photoreflectance from undoped GaAs.

Author

Shen, H., Dutta, M., Lux, R., Buchwald, W., Fotiadis, L., and Sacks, R.N.

Subjects
REFLECTANCE, GALLIUM arsenide semiconductors
Abstract

Examines time constants involved in photoreflectance from several gallium arsenide semiconductor surface-intrinsic-n structures. Determination of the rise and fall times; Dependence of rise and fall times on pump and probe beams intensity and wavelength; Determination of potential barrier height.

Published
1991
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37. HACT device applications

Author

Cullen, D.E., primary, Grudkowski, T.W., additional, Merritt, S.W., additional, Tanski, W.J., additional, Carroll, R.D., additional, Sacks, R.N., additional, and Branciforte, E.J., additional

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