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MESFETs with nonalloyed ohmic contacts using a graded n/sup +/ (InGa)As cap layer.
- Source :
- IEEE Transactions on Electron Devices; 1989, Vol. 36 Issue 6, p1213-1215, 3p
- Publication Year :
- 1989
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 36
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93117142
- Full Text :
- https://doi.org/10.1109/16.24371