1. Electrical Properties of Carbon-Nanotube-Network Transistors in Air after Gamma Irradiation
- Author
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Satoshi Ishii, Toshio Hirao, Shigeru Koshio, Tsuyoshi Hamano, Daisuke Yabe, Teruaki Konishi, and Shotaro Enomoto
- Subjects
010302 applied physics ,Materials science ,business.industry ,Transistor ,Nanotechnology ,02 engineering and technology ,Carbon nanotube ,Radiation ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Particle detector ,Electronic, Optical and Magnetic Materials ,law.invention ,Threshold voltage ,law ,0103 physical sciences ,Optoelectronics ,Irradiation ,0210 nano-technology ,business ,Spectroscopy ,Voltage - Abstract
We experimentally evaluate the electrical properties of carbon nanotube (CNT)-network transistors before and after 60 Co gamma-ray irradiation up to 50 kGy in an air environment. When the total dose is increased, the degree of the threshold voltage ( V th ) shift towards positive gate voltages in the drain current–gate voltage ( I D – V GS ) characteristics decreases for total irradiation doses above 30 kGy, although it is constant below 30 kGy. From our analysis of the I D – V GS characteristics along with micro-Raman spectroscopy, the gamma-ray irradiation does not change the structure of the CNT network channel for total doses up to 50 kGy; it instead generates charge traps near the CNT/SiO 2 gate insulator interfaces. These traps are located within the SiO 2 layer and/or the adsorbate on the device surface. The positively charged traps near the CNT/SiO 2 interface contribute less to the V th shift than the interface dipoles at the CNT/metal electrode interfaces and the segment of the CNT network channel below doses of 30 kGy, while the contribution of the charge traps increases for total doses above 30 kGy. Our findings indicate the possibility of the application of CNT-network transistors as radiation detectors suitable for use in air for radiation doses above 30 kGy.
- Published
- 2016