1. Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors
- Author
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Koichi Okamoto, Kunimichi Omae, Kenichi Inoue, Sg. Fujita, Yoichi Kawakami, Yukio Narukawa, Tomoaki Izumi, S. Sajou, Akio Kaneta, and Takashi Mukai
- Subjects
Photoluminescence ,business.industry ,Chemistry ,Exciton ,Electroluminescence ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Ultrafast laser spectroscopy ,Radiative transfer ,Optoelectronics ,Near-field scanning optical microscope ,business ,Spectroscopy ,Non-radiative recombination - Abstract
Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of various spectroscopic techniques for the assessment of In x Ga 1 -x N-based semiconductors such as time-resolved photoluminescence (TRPL), time-resolved electroluminescence (TREL), transient grating (TG) method to probe photothermal processes, microscopic TRPL using optical microscope, submicroscopic TRPL using scanning near field optical microscopy (SNOM) and pump-and-probe spectroscopy for the measurement of transient absorption/gain spectra. The obtained results are cited in the references.
- Published
- 2001