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Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors
- Source :
- physica status solidi (a). 183:41-50
- Publication Year :
- 2001
- Publisher :
- Wiley, 2001.
-
Abstract
- Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of various spectroscopic techniques for the assessment of In x Ga 1 -x N-based semiconductors such as time-resolved photoluminescence (TRPL), time-resolved electroluminescence (TREL), transient grating (TG) method to probe photothermal processes, microscopic TRPL using optical microscope, submicroscopic TRPL using scanning near field optical microscopy (SNOM) and pump-and-probe spectroscopy for the measurement of transient absorption/gain spectra. The obtained results are cited in the references.
- Subjects :
- Photoluminescence
business.industry
Chemistry
Exciton
Electroluminescence
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Ultrafast laser spectroscopy
Radiative transfer
Optoelectronics
Near-field scanning optical microscope
business
Spectroscopy
Non-radiative recombination
Subjects
Details
- ISSN :
- 1521396X and 00318965
- Volume :
- 183
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi.dedup.....f6d42bca3ece4f4559f28b0c3f713e8f