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1. Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

Author

Inès Massiot, S. Parola, R. Rey, Guilhem Almuneau, Sophie Duzellier, Claude Pons, F. Olivie, T. Nuns, Maxime Levillayer, Alexandre Arnoult, Laurent Artola, Corinne Aicardi, T. Le Cocq, Christophe Inguimbert, R. Monflier, ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre National d'Études Spatiales [Toulouse] (CNES), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Énergie (NRJ), Matériaux (MAT), Équipe MICrosystèmes d'Analyse (LAAS-MICA), Service Instrumentation Conception Caractérisation (LAAS-I2C), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
MJSC, PL, Nuclear and High Energy Physics, Materials science, Electron, Nitride, dilute nitrides, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Gallium arsenide, law.invention, Degradation, chemistry.chemical_compound, EQE, law, 0103 physical sciences, Solar cell, Electron beam processing, Irradiation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Photocurrent, DLTS, irradiation, 010308 nuclear & particles physics, business.industry, electrons, solar cell, Nuclear Energy and Engineering, chemistry, InGaAsN, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Degradation (geology), business
Abstract

International audience; The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of their original photocurrent after 10 15 cm-2 1 MeV-electrons irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.

Published
2021
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2. Impact of 1 MeV proton irradiation on InGaAsN solar cells

Author

M Levillayer, S Duzellier, I Massiot, A Arnoult, S Parola, R Rey, G Almuneau, L Artola, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Institut d’Electronique et des Systèmes (IES), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Énergie (NRJ), and Matériaux (MAT)

Subjects
PL, DLTS, irradiation, protons, Condensed Matter Physics, dilute nitrides, Electronic, Optical and Magnetic Materials, [SPI.MAT]Engineering Sciences [physics]/Materials, photovoltaics, EQE, solar cells, Materials Chemistry, InGaAsN, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

The impact of 1 MeV proton irradiation on 1.12 eV bandgap InGaAsN solar cells was studied through device and material characterizations. After a 1013 p+cm−2 proton fluence, the photocurrent decreases by 28%, due to the formation of defects in both the GaAs emitter and the InGaAsN absorber. Furthermore, photoluminescence measurements suggest that the proton radiation hardness of InGaAsN increases with the nitrogen.

Published
2022
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4. Harmonizing seismicity information in Central Asian countries: earthquake catalogue and active faults

Author

V. Poggi, S. Parolai, N. Silacheva, A. Ischuk, K. Abdrakhmatov, Z. Kobuliev, V. Ismailov, R. Ibragimov, J. Karaev, P. Ceresa, and P. Bazzurro

Subjects
Environmental technology. Sanitary engineering, TD1-1066, Geography. Anthropology. Recreation, Environmental sciences, GE1-350, Geology, QE1-996.5
Abstract

Central Asian countries, which include Kazakhstan, the Kyrgyz Republic, Tajikistan, Turkmenistan, and Uzbekistan, are known to be highly exposed to natural hazards, particularly earthquakes, floods, and landslides. With the aim of enhancing financial resilience and risk-based investment, planning to promote disaster and climate resilience in Central Asia, the European Union, in collaboration with the World Bank and the Global Facility for Disaster Reduction and Recovery (GFDRR), launched the Strengthening Financial Resilience and Accelerating Risk Reduction in Central Asia (SFRARR) regional programme. Within this framework, a consortium of national and international scientific institutions was established and tasked with developing a regionally consistent multi-hazard and multi-asset probabilistic risk assessment. The overall goal was to improve scientific understanding on local perils and to provide local stakeholders and governments with up-to-date tools to support risk management strategies. However, the development of a comprehensive risk model can only be done with the basis of an accurate hazard evaluation, the reliability of which depends significantly on the availability of local data and direct observations. This paper describes the preparation of the input datasets required for the implementation of a probabilistic earthquake model for the Central Asian countries. In particular, it discusses the preparation of a new regional earthquake catalogue harmonized between countries and homogenized in moment magnitude (Mw), as well as the preparation of a regional database of selected active faults with associated slip rate information to be used for the construction of the earthquake source model. The work was carried out in collaboration with experts from the local scientific community, whose contribution proved essential for the rational compilation of the two harmonized datasets.

Published
2024
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5. As-Grown InGaAsN Subcells for Multijunction Solar Cells by Molecular Beam Epitaxy

Author

Christophe Inguimbert, Andrea Balocchi, Maxime Levillayer, S. Parola, Jean Decobert, Guilhem Almuneau, Alexandre Arnoult, Nicolas Vaissiere, T. Nuns, Corinne Aicardi, Sophie Duzellier, Ines Massiot, Laurent Artola, Hélène Carrère, ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, Centre National d'Études Spatiales [Toulouse] (CNES), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Énergie (NRJ), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Matériaux (MAT), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), THALES [France], Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), and THALES

Subjects
MJSC, 1 eV cell, Materials science, MBE, chemistry.chemical_element, 02 engineering and technology, Nitride, 7. Clean energy, Temperature measurement, Bismuth, law.invention, Gallium arsenide, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, law, Solar cell, Dilute nitride, Electrical and Electronic Engineering, Total internal reflection, business.industry, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, chemistry, InGaAsN, Optoelectronics, 0210 nano-technology, business, Molecular beam epitaxy
Abstract

International audience; In this article, we investigate the molecular beam epitaxy growth of unannealed 1.12 eV InGaAsN solar cells. The impact of the growth temperature, the As/III ratio and the bismuth used as a surfactant is reported. An in-situ curvature measurement setup enables to monitor and ensure a constant N incorporation during the InGaAsN growth. Ex-situ characterization results suggest that a high As/III ratio ensures good optoelectronic properties and that the growth temperature has a strong influence on the residual doping of the dilute nitride layer. Under AM0> 870 nm and without anti-reflection coatings, our best InGaAsN solar cells exhibit Jsc and Voc values of 7.94 mA/cm 2 and 0.375 V respectively. Considering no internal reflection and no grid shading, generation up to 12 mA/cm² in a multijunction solar cell can be expected, which is the highest value ever reported for as-grown InGaAsN cells to our knowledge.

Published
2021
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7. Modeling and Characterization of an MBE-Grown Concentrator P-N GaSb Solar Cells Using a Pseudo-3D Model

Author

Julie Tournet, Alexandre Vauthelin, S. Parola, Joanna Kret, Yvan Cuminal, Eric Tournié, Frédéric Martinez, Yves Rouillard, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Australian National University - Department of engineering (ANU), and Australian National University (ANU)

Subjects
Materials science, business.industry, Context (language use), Condensed Matter Physics, Concentrator, Suns in alchemy, 7. Clean energy, Electronic, Optical and Magnetic Materials, Gallium arsenide, law.invention, chemistry.chemical_compound, chemistry, law, Photovoltaics, Solar cell, Optoelectronics, Charge carrier, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

The heterogeneous integration of a GaSb subcell into a 4-terminal cell is currently experiencing a regain of interest for high concentrator multijunction photovoltaics. In this context, the assessment of the lateral charge carrier transport in a GaSb cell under concentrated light is fundamental. The characterization and modeling of a GaSb single-junction solar cell under concentration are presented here. The originality of this article resides in the fine analysis of experimental data using an in-house pseudo-3-D model where the intrinsic diode is modeled with a temperature-dependent 1-D physical model. The limiting factors responsible for the performance drop under concentrated light are discussed. It is also demonstrated that an efficiency of 12.5% can be reached under 64 suns with realistic technological improvements.

Published
2021
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8. Photovoltaic/thermal systems based on concentrating and non-concentrating technologies: Working fluids at low, medium and high temperatures

Author

S. Parola, Rodolphe Vaillon, Chr. Lamnatou, Daniel Chemisana, Universitat de Lleida, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, Field (physics), 020209 energy, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, Critical discussion, Low-temperature applications, Medium-temperature applications, Photovoltaic/thermal (PVT) systems, Phase change, Thermal, 0202 electrical engineering, electronic engineering, information engineering, ComputingMilieux_MISCELLANEOUS, Power plants, Renewable Energy, Sustainability and the Environment, High-temperature applications, Technologies with/without solar concentration, Photovoltaic system, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Engineering physics, 6. Clean water, chemistry, 13. Climate action, Working fluid
Abstract

The present article provides an overview about photovoltaic/thermal systems categorised by the temperature of the working fluid: Low-temperature (lower than 60º C), medium-temperature (between 60 and 90º C) and hightemperature (higher than 90º C). Concerning photovoltaic/thermal-air systems for low-temperature use, the majority of studies involve building-integrated non-concentrating systems with phase change materials and working-fluid temperatures at around 30-55º C. Concerning low-temperature photovoltaic/thermal-water systems, a large number of studies are about non-concentrating configurations appropriate for building-integrated and, in general, domestic applications with working fluids at approximately 50–60º C. Regarding nonconcentrating photovoltaic/thermal systems for medium-temperature use, a large number of references are appropriate for industrial and domestic applications (working fluids: air; water) with around 60-70º C workingfluid temperatures. The literature review about medium-temperature concentrating photovoltaic/thermal systems shows that the majority of investigations concern photovoltaic/thermal-water systems with concentration ratios up to 190X and working fluids at approximately 62-90º C, appropriate for domestic and waterdesalination applications. As for high-temperature concentrating photovoltaic/thermal systems, most of them have concentration ratios up to 1000X, involve parabolic concentrators and use water (as the working fluid) at around 100-250º C. Moreover, in the field of high-temperature photovoltaic/thermal systems, most of the configurations are appropriate for building and industrial applications, and consist of triple-junction or siliconbased photovoltaic/thermal cells. In light of the issues mentioned above, a critical discussion and key challenges (in terms of materials, efficiencies, technologies, etc.) are presented. The authors would like to thank ’’Ministerio de Economía y Competitividad’’ and “Ministerio de Ciencia e Innovación” of Spain for the funding (grant references ENE2016-81040-R and PID2019-111536RBI00). D. Chemisana thanks ’’Institució Catalana de Recerca i Estudis Avançats (ICREA)’’ for the ICREA Acadèmia award. Chr. Lamnatou is Lecturer of the Serra Húnter programme. Figures 1–6: reproduced with permission.

Published
2021
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9. Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells

Author

S. Parola, Rémi Morin, M. de la Mata, Yves Rouillard, Julie Tournet, J. Kret, Sergio I. Molina, Yvan Cuminal, Eric Tournié, Frédéric Martinez, Atif A Khan, N. Fernández-Delgado, Daniel Chemisana, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University (ANU), Applied Physics Section of the Environmental Science Department, Universitat de Lleida, Departamento de Ciencia de los Materiales e I. M. y Q. I., and Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cádiz, Puerto Real, Cádiz, Spain.

Subjects
GaSb, Materials science, Band gap, 02 engineering and technology, Multijunction photovoltaic cell, 010402 general chemistry, 7. Clean energy, 01 natural sciences, law.invention, Tandem cells, law, Solar cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Tandem, Renewable Energy, Sustainability and the Environment, business.industry, Photovoltaic system, AlInAsSb, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Characterization (materials science), Semiconductor, III-Sb alloys, Optoelectronics, 0210 nano-technology, business
Abstract

III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties. This work was partly supported by the French program on “Investments for the future” managed by the National Agency for Research under contracts ANR-10-LABX-22-01-SOLSTICE and ANR-11-EQPX-0016 (Equipex EXTRA) and the H2020 program through MSCA ITN PROMIS (GA 641899). Junta de Andalucía (PAI research group TEP-946 INNANOMAT) is also acknowledged. MdlM thanks Juan de la Cierva postdoctodal contract (IJCI-2017-31507). We thank Prof. Rafal E. Dunin-Borkowski for providing access to the FEI Titan G

Published
2021
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10. Solar Cells Operating under Thermal Stress

Author

Chrysovalantou Lamnatou, S. Parola, Rodolphe Vaillon, Daniel Chemisana, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Universitat de Lleida

Subjects
Materials science, Hybrid systems, 020209 energy, General Physics and Astronomy, 02 engineering and technology, Solar-to-thermal energy conversion, 7. Clean energy, law.invention, [SPI]Engineering Sciences [physics], law, Thermal, Solar cell, 0202 electrical engineering, electronic engineering, information engineering, Thermal sensitivity, Energy transformation, Astrophysics::Solar and Stellar Astrophysics, General Materials Science, Sensitivity (control systems), Photovoltaic system, Energy conversion efficiency, General Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Engineering physics, General Energy, Hybrid system, Fundamental physics, Physics::Space Physics, Astrophysics::Earth and Planetary Astrophysics, 0210 nano-technology, Photovoltaic
Abstract

Operating a solar cell under thermal stress at temperatures >100°C and up to 500°C seems counterintuitive because conversion efficiency drops dramatically. Even so, there are cases in which solar cells are in high-illumination high-temperature conditions, for near-the-sun space missions and in various terrestrial hybrid systems involving solar-to-thermal energy conversion. This review analyzes the progress of solar cells tested in the laboratory under thermal stress. The fundamental physics governing the thermal sensitivity of solar cells and the main criteria determining the ability of semiconductor materials to survive high temperatures are recalled. Materials and architectures of a selection of the solar cells tested so far are examined. Deviation from the Shockley-Queisser limit at each temperature is used for a fair assessment of the performances. Our analysis reveals the strengths and weaknesses of the existing technologies and the gaps to be filled to develop new classes of solar cells capable of withstanding high temperatures. This work was developed in the frame of the French program Investments for the Future managed by the National Agency for Research under contract ANR-10-LABX-22-01-SOLSTICE. C.L. is lecturer of the Serra Húnter programme. D.C. thanks the Institució Catalana de Recerca i Estudis Avançats (ICREA) for the ICREA Acadèmia, and the Ministerio de Ciencia e Innovación (project PID2019-111536RB-I00).

Published
2020
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11. Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application

Author

Sophie Duzellier, Guilhem Almuneau, Laurent Artola, Chantal Fontaine, Inès Massiot, Corinne Aicardi, T. Nuns, S. Parola, Alexandre Arnoult, Maxime Levillayer, Christophe Inguimbert, Hélène Carrère, ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Centre National d'Études Spatiales [Toulouse] (CNES), IEEE, Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
MJSC, 010302 applied physics, Materials science, Annealing (metallurgy), Analytical chemistry, 02 engineering and technology, Substrate (electronics), Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, [SPI.MAT]Engineering Sciences [physics]/Materials, Gallium arsenide, dilute nitride, chemistry.chemical_compound, Pulmonary surfactant, Molecular beam epitaxial growth, chemistry, 0103 physical sciences, InGaAsN, space applications, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 1eV cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology
Abstract

International audience; This paper reports on the optimization of 1eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit Jsc and Voc values of 7.9 mA/cm 2 and 0.375 V respectively, under AM0> 870 nm and without ARC.

Published
2020
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12. GaSb-based solar cells for multi-junction integration on Si substrates

Author

Anthony Krier, Qi Lu, Peter J. Carrington, S. Soresi, Yvan Cuminal, Jean Decobert, Eric Tournié, S. Parola, A. Vauthelin, Julie Tournet, D. Montesdeoca Cardenes, Frédéric Martinez, Yves Rouillard, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Alcatel-Thalès III-V lab (III-V Lab), and THALES-ALCATEL

Subjects
Materials science, 02 engineering and technology, 010402 general chemistry, Epitaxy, 7. Clean energy, 01 natural sciences, law.invention, Lattice mismatch, law, Solar cell, ComputingMilieux_MISCELLANEOUS, Hybrid device, Renewable Energy, Sustainability and the Environment, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, Material quality, Simulated data, Optoelectronics, Cell structure, Dislocation, 0210 nano-technology, business
Abstract

We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

Published
2019
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13. Le mura venete di Brescia

Author

C. Bazzani, F. Pagnoni, S. Parola, E. Valseriati, Montanari, Daniele, Montanari, Daniele (ORCID:0000-0001-6295-1766), C. Bazzani, F. Pagnoni, S. Parola, E. Valseriati, Montanari, Daniele, and Montanari, Daniele (ORCID:0000-0001-6295-1766)

Abstract

Si ricostruisce la storia delle mura venete a Brescia

Published
2020

14. Time-resolved photoluminescence for evaluating laser-induced damage during dielectric stack ablation in silicon solar cells

Author

Marine Le Coz, Mustapha Lemiti, Corina Barbos, S. Parola, D. Blanc-Pélissier, G. Poulain, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Total M&S [Paris La Defense], and TOTAL FINA ELF

Subjects
Materials science, Photoluminescence, Silicon, minority carrier lifetime, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, law.invention, SiNx, Monocrystalline silicon, law, Al2O3, 0103 physical sciences, Crystalline silicon, 010302 applied physics, Laser ablation, laser processing, business.industry, Surfaces and Interfaces, General Chemistry, Carrier lifetime, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Laser, Surfaces, Coatings and Films, chemistry, silicon solar cells, Optoelectronics, photoluminescence, ablation of dielectrics, 0210 nano-technology, business
Abstract

Selective laser ablation of dielectric layers on crystalline silicon wafers was investigated for solar cell fabrication. Laser processing was performed on Al 2 O 3 , and bi-layers Al 2 O 3 /SiN X :H with a nanosecond UV laser at various energy densities ranging from 0.4 to 2 J cm −2 . Ablation threshold was correlated to the simulated temperature at the interface between the dielectric coatings and the silicon substrate. Laser-induced damage to the silicon substrate was evaluated by time-resolved photoluminescence. The minority carrier lifetime deduced from time-resolved photoluminescence was related to the depth of the heat affected zone in the substrate.

Published
2016
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15. Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells

Author

Yvan Cuminal, Joanna Kret, Yves Rouillard, Julie Tournet, Alexandre Vauthelin, S. Parola, Eric Tournié, Frédéric Martinez, Etienne Qbesnel, Joanna El Husseini, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Composants à Nanostructure pour le moyen infrarouge (NANOMIR)

Subjects
010302 applied physics, Materials science, business.industry, 02 engineering and technology, Multijunction photovoltaic cell, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Semiconductor, law, 0103 physical sciences, Antimonide, Solar cell, Optoelectronics, 0210 nano-technology, business, Absorption (electromagnetic radiation), ComputingMilieux_MISCELLANEOUS, Photonic crystal
Abstract

This paper reports on the investigation of Al x Ga 1-x As y Sb 1-y alloys lattice-matched to GaSb for multi-junction solar cell applications. Optical and electrical characterizations of Al x Ga 1-x As y Sb 1-y alloys are carried out to provide accurate material parameters for simulations. Simulations are then performed with these experimental data to propose an optimized and promising structure for Al x Ga 1-x As y Sb 1-y subcells.

Published
2018

16. Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence

Author

Mehdi Daanoune, Mustapha Lemiti, S. Parola, Guillaume Chareyre, Anne Kaminski-Cachopo, D. Blanc-Pélissier, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and OSEO MONOXEN

Subjects
Materials science, Photoluminescence, business.industry, Doping, time-resolved photoluminescence, minorty carrier lifetime, Epitaxial silicon, minority carrier lifetime, Carrier lifetime, Substrate (electronics), Epitaxy, [SPI.MAT]Engineering Sciences [physics]/Materials, High resistivity, Energy(all), epitaxial silicon layer, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Layer (electronics)
Abstract

International audience; Time-resolved photoluminescence (TRPL) is used to evaluate the injection-dependent effective minority carrier lifetime of high resistivity epitaxial silicon layers grown on highly doped CZ-Si substrates. Effective lifetimes ranging from 10 μs to 200 μs are estimated for excess carrier densities between 1x1017 cm-3 and 2x1016 cm-3. Standard models are used to separate the contribution from the different recombination mechanisms. The influence of the epitaxial layer and substrate parameters on the minority carrier effective lifetime measurement is discussed.

Published
2015
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17. Single-Event Transients in Readout Circuitries at Low Temperature Down to 50 K

Author

F. Perrier, S. Ducret, S. Parola, A. Al Youssef, Christian Poivey, Guillaume Hubert, Laurent Artola, R. Buiron, ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, SOFRADIR (Veurey-Voroize), European Space Research and Technology Centre (ESTEC), and European Space Agency (ESA)

Subjects
Infrared image, Nuclear and High Energy Physics, 01 natural sciences, Temperature measurement, LOW TEMPERATURES, SENSEURS D'IMAGES INFRAROUGE, Optics, HEAVY IONS, Louvain la neuve, 0103 physical sciences, ROIC, Sensitivity (control systems), SINGLE EVENT TRANSIENT (SET), Electrical and Electronic Engineering, Electronic circuit, 010302 applied physics, Physics, 010308 nuclear & particles physics, business.industry, [PHYS.HTHE]Physics [physics]/High Energy Physics - Theory [hep-th], [PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph], IONS LOURDS, Nuclear Energy and Engineering, INFRARED (IR) IMAGE SENSORS, Transient (oscillation), READOUT INTEGRATED CIRCUITRIES (ROICS), business, Event (particle physics), SET
Abstract

International audience; This paper presents the impact of cryogenic temperatures, down to 50 K, on the single-event transient (SET) sensitivity of two readout circuits of infrared image sensor designed by Sofradir. Experimental SETs data obtained under heavy ions at the Université Catholique de Louvain la Neuve facility are described, and the temperature impact on the SET cross sections is presented. The analysis of experimental sensitivity trends is completed by means of MUSCA SEP3 tool.

Published
2017
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18. Characterization and modeling of electrical transport in undoped hydrogenated microcrystalline silicon

Author

S. Parola, Yvan Cuminal, P. Abboud, R. Amrani, Frédéric Martinez, D. Habib, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, microcrystalline silicon, 02 engineering and technology, 01 natural sciences, law.invention, percolation, Electrical transport, law, Electrical resistivity and conductivity, 0103 physical sciences, Materials Chemistry, Quantum tunnelling, 010302 applied physics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Characterization (materials science), [SPI.TRON]Engineering Sciences [physics]/Electronics, Microcrystalline silicon, Chemical physics, Percolation, Electrical network, transport, Ceramics and Composites, Grain boundary, AFM, 0210 nano-technology
Abstract

International audience; In this paper, we present the characterization and modeling of the electrical transport of hydrogenated microcrystalline silicon (µc-Si:H). Electrical conductivity measurements for several crystalline fractions have been carried out. The latter have been combined with surface potential measurements from atomic force microscopy in order to investigate the electrical transport in the heterogeneous structure. We propose a new numerical model based on a three-dimensional electrical circuit to extract the parameters involved in the transport. A physical based model of tunneling at large grain boundary is implemented. Combining the latter with other conductivities in the large electrical circuit, the percolation behavior in respect to crystalline fraction is fully simulated. A benefit of such a model is that it captures the fundamental physics phenomena with only a few comprehensible parameters.

Published
2017
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19. Single Event Transient and Functional Interrupt in Readout Integrated Circuit of Infrared Image Sensors at Low Temperatures

Author

Guillaume Hubert, R. Buiron, S. Parola, C. Poivey, Laurent Artola, S. Ducret, and A. Al Youssef

Subjects
Physics, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, business.industry, Event (computing), 010401 analytical chemistry, 01 natural sciences, Temperature measurement, Multiplexing, 0104 chemical sciences, Readout integrated circuit, 0103 physical sciences, Electronic engineering, Optoelectronics, Transient (oscillation), Interrupt, business, Sensitivity (electronics), Beam (structure)
Abstract

This work presents the measurements of single event transients and functional interrupts on two designs of readout integrated circuit under a heavy ions beam at cryogenic temperatures. The temperature dependence of the SEFI occurrence is limited.

Published
2017
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20. Improved efficiency of GaSb solar cells using an Al0.50Ga0.50As0.04Sb0.96 window layer

Author

Julie Tournet, Yvan Cuminal, J. Kret, S. Parola, A. Vauthelin, Eric Tournié, Yves Rouillard, J. El Husseini, Frédéric Martinez, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Composants à Nanostructure pour le moyen infrarouge (NANOMIR)

Subjects
Materials science, Context (language use), 02 engineering and technology, 010402 general chemistry, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Renewable Energy, Sustainability and the Environment, Solar spectra, business.industry, Energy conversion efficiency, Window (computing), Limiting, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Gallium antimonide, chemistry, Optoelectronics, Current (fluid), 0210 nano-technology, business, Layer (electronics)
Abstract

The increasing number of subcells in multi-junction structures imposes the use of narrow bandgaps for a full harvesting of the solar spectrum. In this context, gallium antimonide (GaSb) and its lattice-matched alloys offer a great potential. To date, GaSb-based multi-junction solar cells exhibit experimental results below theoretical expectations, due to a limiting GaSb subcell. In this paper, a new design of GaSb cells comprising an Al0.50Ga0.50As0.04Sb0.96 window layer is studied. With this design, an excellent conversion efficiency of 7.2% is achieved under 1 sun (AM1.5G) illumination. This performance is attributed to a significant improvement in short-circuit current.

Published
2019
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21. Study of Photoluminescence Decay by Time-correlated Single Photon Counting for the Determination of the Minority-carrier Lifetime in Silicon

Author

A. Kaminski, B. Semmache, A. Focsa, Mehdi Daanoune, E. Picard, S. Parola, Mustapha Lemiti, B. Pelissier, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Irysolar, SEMCO-ENGINEERING GROUP, and OSEO ' MONOXEN'

Subjects
Range (particle radiation), Materials science, Photoluminescence, Silicon, business.industry, lifetime measurement, time-resolved photoluminescence, chemistry.chemical_element, Conductance, silicon, Carrier lifetime, 7. Clean energy, Photon counting, [SPI.MAT]Engineering Sciences [physics]/Materials, minority carrier lifetime measurement, chemistry, Energy(all), Optoelectronic materials, Optoelectronics, Transient (oscillation), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, time-correlated single photon counting, minority carrier
Abstract

International audience; The minority-carrier lifetime is a crucial parameter for the improvement of electronic or optoelectronic materials and particularly solar cells. We have investigated the potential of the time-correlated single photon counting (TCSPC) for the measurement of time-resolved photoluminescence (TRPL) and the direct determination of the effective minority-carrier lifetime in silicon. The TRPL technique was found to be in very good agreement with quasi-steady state and transient photoconductance results obtained from Sinton Instruments and micro-wave photo- conductance from Semilab. We have demonstrated the ability to evaluate the effective carrier lifetime of silicon substrates over a broad range of values (between a few μs and less than 500 μs).

Published
2014
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22. Silicon nanocrystals: Novel synthesis routes for photovoltaic applications

Author

Ling Xie, Jérémy Barbé, Shane O'Brien, Miro Zeman, Hugh Doyle, Karol Jarolimek, Keith Linehan, Etienne Quesnel, Bernard Despax, Andrew J. Kingsley, Simon Perraud, Viviane Muffato, Stephen P. Richards, René A. C. M. M. van Swaaij, Klaus Leifer, Ian M. Povey, S. Parola, Martyn E. Pemble, Pascal Faucherand, Christine Morin, Kremena Makasheva, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Delft University of Technology (TU Delft), SAFC Hitech, Tyndall National Institute [Cork], Department Engineering Sciences - Industrial Engineering and Management [Uppsala], Uppsala University, Matériaux et Procédés Plasmas (LAPLACE-MPP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), and Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3)

Subjects
Materials science, Silicon, Annealing (metallurgy), Hybrid silicon laser, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Photovoltaics, 0103 physical sciences, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Nanocomposite, business.industry, Wide-bandgap semiconductor, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Nanocrystal, 0210 nano-technology, business
Abstract

Novel processes were developed for fabricating silicon nanocrystals and nanocomposite materials which could be used as absorbers in third generation photovoltaic devices. A conventional high-temperature annealing technique was studied as a reference process, with some new insights in crystallisation mechanisms. Innovative methods for silicon nanocrystal synthesis at much lower temperature were demonstrated, namely chemical vapour deposition (CVD), physical vapour deposition (PVD) and aerosol-assisted CVD. Besides the advantage of low substrate temperature, these new techniques allow to fabricate silicon nanocrystals embedded in wide bandgap semiconductor host matrices, with a high density and a narrow size dispersion.

Published
2012
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23. Time-resolved photoluminescence for self-calibrated injection-dependent minority carrier lifetime measurements in silicon

Author

D. Blanc-Pélissier, S. Parola, Anne Kaminski-Cachopo, Mehdi Daanoune, Mustapha Lemiti, INL - Photovoltaïque ( INL - PV ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation ( IMEP-LAHC ), Centre National de la Recherche Scientifique ( CNRS ) -Université Savoie Mont Blanc ( USMB [Université de Savoie] [Université de Chambéry] ) -Institut National Polytechnique de Grenoble ( INPG ) -Université Joseph Fourier - Grenoble 1 ( UJF ) -Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Université Grenoble Alpes ( UGA ), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and OSEO 'MONOXEN'

Subjects
Photoluminescence, Materials science, Acoustics and Ultrasonics, Silicon, [ SPI.MAT ] Engineering Sciences [physics]/Materials, chemistry.chemical_element, 02 engineering and technology, Photovoltaic effect, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, 0103 physical sciences, Wafer, Laser power scaling, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Photoconductivity, Doping, Carrier lifetime, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, business
Abstract

International audience; Time-resolved photoluminescence (TRPL) was investigated on passivated silicon wafers under modulated square-wave laser illumination. It is shown that time-correlated single-photon counting can be used to record the transient signals on silicon wafers with doping levels commonly used for photovoltaic applications. This article reports the self calibrated evaluation of the injection-dependent effective minority carrier lifetime from the TRPL measurements. The method only requires knowing the doping level, the incident laser power, the reflection coefficient and the sample thickness. TRPL results were found to be in good agreement with photoconductance lifetime measurements. The effect of the surface recombination velocity on the generation of the PL signal was shown experimentally and discussed with PC1D calculations.

Published
2015
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24. Gas fields and large shallow seismogenic reverse faults are anticorrelated

Author

G. Valensise, F. Donda, A. Tamaro, G. Rosset, and S. Parolai

Subjects
Medicine, Science
Abstract

Abstract We investigated the spatial relationships among 18 known seismogenic faults and 1651 wells drilled for gas exploitation in the main hydrocarbon province of northern-central Italy, a unique dataset worldwide. We adopted a GIS approach and a robust statistical technique, and found a significant anticorrelation between the location of productive wells and of the considered seismogenic faults, which are often overlain or encircled by unproductive wells. Our observations suggest that (a) earthquake ruptures encompassing much of the upper crust may cause gas to be lost to the atmosphere over geological time, and that (b) reservoirs underlain by smaller or aseismic faults are more likely to be intact. These findings, which are of inherently global relevance, have crucial implications for future hydrocarbon exploitation, for assessing the seismic–aseismic behaviour of large reverse faults, and for the public acceptance of underground energy and CO2 storage facilities—a pillar of future low carbon energy systems—in tectonically active areas.

Published
2022
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26. Optoelectronic properties of p-i-n heterojunctions based on germanium nanocrystals

Author

Abdelilah Slaoui, J. Coignus, Etienne Quesnel, S. Parola, Klaus Leifer, Viviane Muffato, Ling Xie, Département des Technologies des NanoMatériaux (DTNM), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut d'Electronique du Solide et des Systèmes (InESS), and Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Silicon, business.industry, Photovoltaic system, General Physics and Astronomy, chemistry.chemical_element, Germanium, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, [SPI]Engineering Sciences [physics], chemistry, Nanocrystal, Si substrate, Aluminium, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Layer (electronics), ComputingMilieux_MISCELLANEOUS
Abstract

We investigated the possibility of using physical vapour deposited Ge nanocrystals (NCs) in optoelectronic devices such as solar cells. We have prepared p-i-n heterojunctions based on p+-doped Si substrate/undoped Ge NCs/ZnO:Al layer stacks and their optoelectronic properties were characterised. Under light, the generation of photo-carriers from the Ge NCs themselves was demonstrated. The photovoltaic behaviour of the p-i-n structure was also highlighted, with a measured Voc of 224 mV compared to 580 mV in theory. The discrepancy between theory and experiment was discussed on the basis of TEM observations, optical and carrier generation measurements as well as modelling.

Published
2013

27. Influence of the embedding matrix on optical properties of Ge nanocrystals-based nanocomposite

Author

Viviane Muffato, J. Bartringer, Abdelilah Slaoui, S. Parola, Etienne Quesnel, and Jung, Marie-Anne

Subjects
Nanocomposite, Materials science, Photoluminescence, Band gap, business.industry, Mie scattering, General Physics and Astronomy, Nanoparticle, chemistry.chemical_element, Germanium, chemistry, Nanocrystal, Quantum dot, Optoelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

Germanium nanocrystals were prepared by a nanocluster source and characterized by photoluminescence and spectroscopic photometry methods. The optical measurements were carried out in order to estimate the effective bandgap of the Ge nanocrystals. Both Mie theory and the quantum confinement theory were applied to interpret the extracted absorption data. We found that the quantum confinement theory enables to explain the nanocrystal size and the host matrix dependence of the nanocrystal bandgap. On the other hand, the photoluminescence measurements have not allowed to confirm the bandgap evaluated from absorption data. This is explained as due to the dominant effect of the recombination at the nanocrystals surface.

Published
2013

28. Structural properties of Ge nanocrystals synthesized by a PVD nanocluster source

Author

Abdelilah Slaoui, Laure Guétaz, H. Szambolics, J. Bartringer, S. Parola, Etienne Quesnel, Viviane Muffato, Jung, Marie-Anne, Institut d'Electronique du Solide et des Systèmes (InESS), Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Materials science, Annealing (metallurgy), Bioengineering, Nanotechnology, General Chemistry, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Amorphous solid, Surface coating, symbols.namesake, Chemical engineering, Transmission electron microscopy, Modeling and Simulation, Physical vapor deposition, symbols, Energy filtered transmission electron microscopy, General Materials Science, Raman spectroscopy, High-resolution transmission electron microscopy, ComputingMilieux_MISCELLANEOUS
Abstract

In this study, the synthesis of Ge nanoparticles by a physical vapour deposition (PVD) nanocluster source has been investigated. We typically obtain Ge nanoparticles with a mean diameter between 4 and 9 nm. The microstructure of Ge nanoparticles was widely studied by high resolution transmission electron microscopy, energy filtered transmission electron microscopy, X-ray diffraction and Raman spectroscopy. The main result is the capability of the PVD process to synthesize well crystallized Ge nanocrystals at room temperature and without any post thermal annealing. It was found from Raman analysis that these room temperature deposited nanoparticles are composed of a Ge crystalline core and a sub-nm thick amorphous Ge shell. A low temperature annealing (450 °C) during 1 h under vacuum leads to the reorganization of the surface atoms while longer annealing seems to promote the formation of a Ge oxide shell around the nanoparticles.

Published
2012
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29. Crystal structure of tris[oxobis(2,4-pentanedionato)tin(IV)],[SnO(acac)2]3

Author

S. Parola, L. G. Hubert-Pfalzgraf, S. Lecocq, M. Verdenelli, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de recherches sur la catalyse (IRC), and Centre National de la Recherche Scientifique (CNRS)

Subjects
Tris, Diketone, Crystallography, 010405 organic chemistry, Acetylacetone, Inorganic chemistry, chemistry.chemical_element, Crystal structure, [CHIM.CATA]Chemical Sciences/Catalysis, 010402 general chemistry, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Inorganic Chemistry, chemistry.chemical_compound, chemistry, QD901-999, Polymer chemistry, Molecule, General Materials Science, Tin
Published
2001
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30. Assessing olfaction in the Italian population: methodology and clinical application

Author

S. Parola and P. Liberini

Subjects
Olfactory system, medicine.medical_specialty, Neurology, medicine.diagnostic_test, General Neuroscience, Neuropsychology, Neurodegenerative Diseases, Disease, Olfaction, Neuropsychological Tests, medicine.disease, Smell, Psychophysiology, Italy, medicine, Dementia, Humans, Neurology (clinical), Neuropsychological assessment, Psychology, Neuroscience
Abstract

Disorders of the sense of smell are receiving growing clinical as well as experimental attention. Indeed, several neurological conditions have been associated with peripheral or central deficits of the olfactory system. In recent years, particular emphasis has been attributed to the early and severe olfactory impairment in neurodegenerative diseases, such as Alzheimer's dementia and Parkinson's disease. Olfactory assessment has also been included in comprehensive pre- and post-surgical evaluations of temporal lobe epilepsy. Moreover, the request for standardized methods of olfactory evaluation by forensic and occupational medicine is greatly increasing. Despite this requirement, there is no agreement in the Italian neurological community on olfactory assessment. This lack prompted us to generate a battery of standardized tests capable of bypassing cross-cultural differences in olfactory assessment and to be potentially useful in the clinical als well as experimental settings. Procedures of assessment of olfactory acuity (detection threshold), identification (multiple choice odor naming), discrimination (differentiation between similar/dissimilar odorants) and memory (recognition of a substance previously smelled) are fully described. In order to control bias factors depending upon the nature of the investigated disorder and the applied olfactory tasks, a minimal complementary neuropsychological assessment is recommended.

Published
2000

31. Mixed-Metal Bismuth-Titanium Species. Chemical Routes to Bi4Ti3O12

Author

Liliane G. Hubert-Pfalzgraf, Renée Papiernik, Susan Jagner, J.P. Mercurio, F. Soares-Carvalho, P. Thomas, S. Parola, Université de Nice-Sophia-Antipolis (Université de Nice-Sophia-Antipolis), Chalmers University of Technology [Gothenburg, Sweden], Laboratoire de Matériaux Céramiques et Traitements de Surface (LMCTS), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, Mixed metal, chemistry.chemical_element, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Bismuth, Chemical engineering, chemistry, 0103 physical sciences, Wafer, 0210 nano-technology, Titanium
Abstract

Several routes to mixed-metal Bi-Ti species have been investigated. The inertness of bismuth alkoxides Bi(OR)3 (R = Et, iPr) toward their titanium analogs could be overcome by controlled microhydrolysis of Bi alkoxides. The first mixed-metal species based on bismuth, BiTi2O(OiPr)9, has thus been isolated and structurally characterized.Coatings of Bi4Ti3O12 have been deposited on silicon wafers by using the gels derived from Ti and Bi 2-methoxyethoxides solutions.

Published
1994
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32. Integrated Geophysical Analyses of Shallow-Water Seismic Imaging With Scholte Wave Inversion: The Northern Adriatic Sea Case Study

Author

M. Giustiniani, U. Tinivella, S. Parolai, F. Donda, G. Brancolini, and V. Volpi

Subjects
Scholte waves, inversion, multichannel seismic data, wave equation datuming, seismic image, Science
Abstract

The integrated analysis using different seismic wave types in a record is a very efficient approach for a comprehensive characterization of marine sediments, especially in shallow water conditions. The proposed integrated method to analyze seismic data in post-critical conditions consists of: 1) the inversion of Scholte waves to obtain a reliable Vs distribution of the near seafloor; 2) pre-processing of seismic data; 3) construction of the P-wave velocity field by using all available information, including available well data; and 4) the application of the wave equation datuming and post-processing, such as pre-stack time migration. We demonstrate how this approach could be successfully applied on seismic datasets characterized by post-critical conditions and the occurrence of the Scholte waves, which may be exploited to provide fundamental information instead of being only an unwanted effect. The integrated analysis of seismic events can thus help, together with data processing, by providing better seismic imaging, which is a priority for a reliable seismostratigraphic interpretation.

Published
2020
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33. Multi-hazard fragility analysis for fluvial dikes in earthquake- and flood-prone areas

Author

S. Tyagunov, S. Vorogushyn, C. Muñoz Jimenez, S. Parolai, and K. Fleming

Subjects
Environmental technology. Sanitary engineering, TD1-1066, Geography. Anthropology. Recreation, Environmental sciences, GE1-350, Geology, QE1-996.5
Abstract

The paper presents a methodology for the multi-hazard fragility analysis of fluvial earthen dikes in earthquake- and flood-prone areas due to liquefaction. The methodology has been applied for the area along the Rhine River reach and adjacent floodplains between the gauges at Andernach and Düsseldorf. Along this domain, the urban areas are partly protected by dikes, which may be prone to failure during exceptional floods and/or earthquakes. The fragility of the earthen dikes is analysed in terms of liquefaction potential, characterized by the factor of safety estimated using the procedure of Seed and Idriss (1971). Uncertainties in the geometrical and geotechnical dike parameters are considered in a Monte Carlo simulation (MCS). Failure probability of the earthen structures is presented in the form of a fragility surface as a function of both seismic hazard and hydrologic/hydraulic load.

Published
2018
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34. Lifetime Degradation on n-type Wafers with Boron-diffused and SiO2/SiN-passivated Surface

Author

S. Parola, Clémentine Renevier, Erwann Fourmond, E. Picard, Maxime Forster, Marine Le Coz, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Apollon Solar (Apollon Solar), Apollon Solar, Irysolar, and SEMCO-ENGINEERING GROUP

Subjects
inorganic chemicals, Materials science, Passivation, business.industry, Thermal effect, chemistry.chemical_element, Thermal aging, Carrier lifetime, [SPI.TRON]Engineering Sciences [physics]/Electronics, n-type silicon, chemistry, Energy(all), boron diffusion, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Degradation (geology), Wafer, lifetime degradation, Boron, business, Layer (electronics)
Abstract

International audience; We observe minority carrier lifetime degradation in n-type wafers with boron-diffused surface and SiO2/SiN pas-sivation when exposed to illumination or thermal aging. This degradation is not observed on control wafers with phosphorus-diffused surfaces and identical passivation under the same treatment. Boron-diffused wafers with Si-rich SiN or Al2O3 passivation do not degrade either. Both boron-diffused layer and SiO2/SiN are thus necessary to observe this degradation. Experiments on different aging conditions indicate that the degradation is due to a thermal effect accelerated by injection of excess carriers.

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35. Time-resolved Photoluminescence for the Measurement of the Effective Carrier Lifetime in Si Photonic Structures

Author

D. Blanc-Pélissier, Regis Orobtchouk, Mustapha Lemiti, Loïc Lalouat, Corina Barbos, S. Parola, Abdelmounaim Harouri, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Nanophotonique (INL - Photonique), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), and Lemiti, Mustapha

Subjects
Materials science, Photoluminescence, Silicon, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Energy(all), Etching (microfabrication), 0103 physical sciences, Crystalline silicon, Time domain, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, minorty carrier lifetime, time-resolved photoluminescence, Carrier lifetime, 021001 nanoscience & nanotechnology, photonic structures, thin-films silicon solar cells, chemistry, Optoelectronics, Photonics, 0210 nano-technology, business
Abstract

Two-dimensional photonic structures for advanced light trapping in thin film crystalline silicon solar cells are mainly studied from the optical point of view. However, the nanopatterning process can induce etching damage that can reduce the minority carrier lifetime and the cell performance. Time-resolved photoluminescence is used to evaluate the effect of photonic structures on the effective lifetime of nanopatterned silicon epi-layers. Two excitation wavelengths are used to evaluate separately the quality of the bulk and the patterned surface of the epi-layers. The measurements are discussed in connection with the carrier generation maps calculated with Finite-Difference Time Domain simulations.

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36. Uncertainty and sensitivity analyses in seismic risk assessments on the example of Cologne, Germany

Author

S. Tyagunov, M. Pittore, M. Wieland, S. Parolai, D. Bindi, K. Fleming, and J. Zschau

Subjects
Environmental technology. Sanitary engineering, TD1-1066, Geography. Anthropology. Recreation, Environmental sciences, GE1-350, Geology, QE1-996.5
Abstract

Both aleatory and epistemic uncertainties associated with different sources and components of risk (hazard, exposure, vulnerability) are present at each step of seismic risk assessments. All individual sources of uncertainty contribute to the total uncertainty, which might be very high and, within the decision-making context, may therefore lead to either very conservative and expensive decisions or the perception of considerable risk. When anatomizing the structure of the total uncertainty, it is therefore important to propagate the different individual uncertainties through the computational chain and to quantify their contribution to the total value of risk. The present study analyses different uncertainties associated with the hazard, vulnerability and loss components by the use of logic trees. The emphasis is on the analysis of epistemic uncertainties, which represent the reducible part of the total uncertainty, including a sensitivity analysis of the resulting seismic risk assessments with regard to the different uncertainty sources. This investigation, being a part of the EU FP7 project MATRIX (New Multi-Hazard and Multi-Risk Assessment Methods for Europe), is carried out for the example of, and with reference to, the conditions of the city of Cologne, Germany, which is one of the MATRIX test cases. At the same time, this particular study does not aim to revise nor to refine the hazard and risk level for Cologne; it is rather to show how large are the existing uncertainties and how they can influence seismic risk estimates, especially in less well-studied areas, if hazard and risk models adapted from other regions are used.

Published
2014
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37. The Structure of the Pyridine Complex of p-tetrakis(phenylazo)-tetra-hydroxythiacalix[4]arene.

Author

M. Perrin, C. Bavoux, F. Vocanson, R. Lamartine, C. Desroches, P. Miele, and S. Parola <SU

Abstract

p-Tetrakis(phenylazo)-tetra-hydroxythiacalix[4]arene shows complexing properties with neutral molecules. A complex with pyridine was crystallized and the crystal structure determined. The crystals are monoclinic, space group C2/c, a = 49.953(10), b = 21.566(4), c = 23.448(5) Å, β = 105.12(3)°, V = 24386(8) Å 3, Z = 16. Two macrocycles are positioned in such a way that they form a cavity where two pyridine molecules are encapsulated giving a 2:2 endocomplex. 5.5 other pyridine molecules are trapped between the macrocycles, two of them giving H-bonds with the calixarenes. [ABSTRACT FROM AUTHOR]

Published
2003
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39. Bootstrap inversion for Pn wave velocity in North-Western Italy

Author

C. Eva, D. Spallarossa, and S. Parolai

Subjects
Pn wave, tomography, bootstrap, Italy, Meteorology. Climatology, QC851-999, Geophysics. Cosmic physics, QC801-809
Abstract

An inversion of Pn arrival times from regional distance earthquakes (180-800 km), recorded by 94 seismic stations operating in North-Western Italy and surrounding areas, was carried out to image lateral variations of P-wave velocity at the crust-mantle boundary, and to estimate the static delay time at each station. The reliability of the obtained results was assessed using both synthetic tests and the bootstrap Monte Carlo resampling technique. Numerical simulations demonstrated the existence of a trade-off between cell velocities and estimated station delay times along the edge of the model. Bootstrap inversions were carried out to determine the standard deviation of velocities and time terms. Low Pn velocity anomalies are detected beneath the outer side of the Alps (-6%) and the Western Po plain (-4%) in correspondence with two regions of strong crustal thickening and negative Bouguer anomaly. In contrast, high Pn velocities are imaged beneath the inner side of the Alps (+4%) indicating the presence of high velocity and density lower crust-upper mantle. The Ligurian sea shows high Pn velocities close to the Ligurian coastlines (+3%) and low Pn velocities (-1.5%) in the middle of the basin in agreement with the upper mantle velocity structure revealed by seismic refraction profiles.

Published
1997
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40. Time-resolved photoluminescence for self-calibrated injection-dependent minority carrier lifetime measurements in silicon.

Author

S Parola, M Lemiti, D Blanc-Pélissier, M Daanoune, and A Kaminski-Cachopo

Subjects
*PHOTOLUMINESCENCE, *SILICON wafers, *SQUARE waves, *LASERS, *LIGHTING, *TIME-resolved fluorometry
Abstract

Time-resolved photoluminescence (TRPL) was investigated on passivated silicon wafers under modulated square-wave laser illumination. It is shown that time-correlated single-photon counting can be used to record the transient signals on silicon wafers with doping levels commonly used for photovoltaic applications. This article reports the self calibrated evaluation of the injection-dependent effective minority carrier lifetime from the TRPL measurements. The method only requires knowing the doping level, the incident laser power, the reflection coefficient and the sample thickness. TRPL results were found to be in good agreement with photoconductance lifetime measurements. The effect of the surface recombination velocity on the generation of the PL signal was shown experimentally and discussed with PC1D calculations. [ABSTRACT FROM AUTHOR]

Published
2015
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42. Water-soluble platinum and palladium porphyrins with peripheral ethyl phosphonic acid substituents: synthesis, aggregation in solution, and photocatalytic properties.

Author

Volostnykh MV, Kirakosyan GA, Sinelshchikova AA, Ermakova EV, Gorbunova YG, Tsivadze AY, Borisov SM, Meyer M, Khrouz L, Monnereau C, Parola S, and Bessmertnykh-Lemeune A

Abstract

Water-soluble porphyrins have garnered significant attention due to their broad range of applications in biomedicine, catalysis, and material chemistry. In this work, water-soluble platinum(II) and palladium(II) complexes with porphyrins bearing ethyl phosphonate substituents, namely, Pt/Pd 10-(ethoxyhydroxyphosphoryl)-5,15-di( p -carboxyphenyl)porphyrins (M3m, M = Pt(II), Pd(II)) and Pt/Pd 5,10-bis(ethoxyhydroxyphosphoryl)-10,20-diarylporphyrins (M1d-M3d; aryl = p -tolyl (1), mesityl (2), p -carboxyphenyl (3)), were synthesized by alkaline hydrolysis of the corresponding diethyl phosphonates M6m and M4d-M6d. NMR, UV-vis, and fluorescence spectroscopy revealed that the mono-phosphonates M3m tend to form aggregates in aqueous media, while the bis-phosphonates M3d exist predominantly as monomeric species across a wide range of concentrations (10 -6 -10 -3 M), ionic strengths (0-0.81 M), and pH values (4-12). Single-crystal X-ray diffraction studies of the diethyl phosphonates Pt6d and Pd6d revealed that π-π stacking of the aromatic macrocycles is sterically hindered in the crystals, providing a rationale for the low degree of solution aggregation observed for ethyl phosphonate M3d. Photophysical studies of M3m and M1d-M3d demonstrated that these compounds are phosphorescent and generate singlet oxygen in aqueous solutions. Pd(II) complex Pd3d is an excellent photocatalyst for the oxidation of sulfides using di-oxygen in a solvent mixture (MeCN/H 2 O, 4 : 1 v/v). Under these conditions, various alkyl and aryl sulfides were quantitatively converted into the desired sulfoxides. For the oxygenation of mixed alkyl-aryl sulfides, Pd3d outperforms Pd(II) meso -tetrakis( p -carboxyphenyl)porphyrin (PdTCPP). This photocatalyst can be recycled and reused to afford sulfoxides with no loss of product yield.

Published
2025
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43. PARP inhibitors in testicular germ cell tumors: what we know and what we are looking for.

Author

Parola S, Oing C, Rescigno P, Feliciano S, Carlino F, Pompella L, Marretta AL, De Santo I, Viggiani M, Muratore M, Facchini BA, Orefice J, Cioli E, Sparano F, Mallardo D, De Giorgi U, Palmieri G, Ascierto PA, and Ottaviano M

Abstract

Testicular germ cell tumors (TGCTs), the most common malignancies affecting young men, are characterized by high sensitivity to cisplatin-based chemotherapy, which leads to high cure rates even in metastatic disease. However, approximately 30% of patients with metastatic TGCTs relapse after first-line treatment and those who can be defined as platinum-refractory patients face a very dismal prognosis with only limited chemotherapy-based treatment options and an overall survival of few months. Hence, to understand the mechanisms underlying cisplatin resistance is crucial for developing new treatment strategies. This narrative review explores the potential role of PARP inhibitors (PARPis) in overcoming cisplatin resistance in TGCTs, starting from the rationale of their ability to induce DNA damage in cells with homologous recombination repair (HRR). Thus far, PARPis have failed to show meaningful clinical activity in platinum-refractory TGCT patients, either alone or in combination with chemotherapy. However, few responses to PARPis in TGCTs have been detected in patients with BRCA1/2, ATM or CHEK2 mutations, reinforcing the idea that patients should be optimally selected for tailored treatments in the era of personalized medicine. Future preclinical and clinical research is needed to further investigate the molecular mechanisms of cisplatin resistance and to identify novel therapeutic strategies in resistant/refractory TGCTs patients., Competing Interests: The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest. The author(s) declared that they were an editorial board member of Frontiers, at the time of submission. This had no impact on the peer review process and the final decision., (Copyright © 2024 Parola, Oing, Rescigno, Feliciano, Carlino, Pompella, Marretta, De Santo, Viggiani, Muratore, Facchini, Orefice, Cioli, Sparano, Mallardo, De Giorgi, Palmieri, Ascierto and Ottaviano.)

Published
2024
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44. Pyrene monomer-excimer dynamics to reveal molecular organization in mesoporous hybrid silica films.

Author

Kusz J, Boissiere C, Bretonnière Y, Sanchez C, and Parola S

Abstract

Self-assembly and characteristics of hybrid mesoporous silica film templates remain a subject of inquiry. The short time scale of the inorganic condensation and formation of micelles makes our understanding of this process insufficient. To provide an insight into the evaporation-induced self-assembly of such films, we synthesized an efficient molecular probe of the triethoxysilane precursor bearing a pyrene derivative. The probe was introduced into the porous film at the synthesis stage through the sol-gel co-condensation method. At different synthesis stages, the emission of pyrene moieties was measured by fluorescence spectroscopy, revealing the placement of probes within the film. We also report dynamic excimer formation upon template removal. Moreover, we evaluate the influence of several parameters on the pyrene excimer formation phenomenon. The pore geometry, probe concentration, and the presence of another organosilane precursor are investigated in this work.

Published
2024
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45. Author Correction: Clinical impact of drug-drug interactions on abemaciclib in the real-world experience of AB-ITALY study.

Author

Scagnoli S, Pisegna S, Toss A, Caputo R, De Laurentiis M, Palleschi M, de Giorgi U, Cortesi E, Fabbri A, Fabi A, Paris I, Orlandi A, Curigliano G, Criscitiello C, Garrone O, Tomasello G, D'Auria G, Vici P, Ricevuto E, Domati F, Piombino C, Parola S, Scafetta R, Cirillo A, Taurelli Salimbeni B, Di Lisa FS, Strigari L, Preissner R, Simmaco M, Santini D, Marchetti P, and Botticelli A

Published
2024
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46. Clinical impact of drug-drug interactions on abemaciclib in the real-world experience of AB-ITALY study.

Author

Scagnoli S, Pisegna S, Toss A, Caputo R, De Laurentiis M, Palleschi M, de Giorgi U, Cortesi E, Fabbri A, Fabi A, Paris I, Orlandi A, Curigliano G, Criscitiello C, Garrone O, Tomasello G, D'Auria G, Vici P, Ricevuto E, Domati F, Piombino C, Parola S, Scafetta R, Cirillo A, Taurelli Salimbeni B, Di Lisa FS, Strigari L, Preissner R, Simmaco M, Santini D, Marchetti P, and Botticelli A

Abstract

Abemaciclib demonstrated clinical benefit in women affected by HR+/HER2- advanced breast cancer (aBC). Drug-drug interactions (DDIs) can lead to reduced treatment efficacy or increased toxicity. This retro-prospective study aimed to evaluate outcomes, DDIs' impact, and toxicities of abemaciclib combined with endocrine therapy in a real-world setting. Patients from 12 referral Italian hospitals with HR+/HER2- aBC who received abemaciclib were included. Clinical data about comorbidities, concurrent medications, outcomes, and adverse events (AE) were collected. Drug-PIN® (Personalized Interactions Network) is a tool recognizing the role of multiple interactions between active and/or pro-drug forms combined with biochemical and demographic patient data. The software was used to define the Drug-PIN score and Drug-PIN tier (green, yellow, dark yellow, and red) for each patient. Univariate and multivariate analyses were performed to identify predictors of patients' PFS or toxicity. One hundred seventy-three patients were included. 13% of patients had >75years. The overall response rate (ORR) was 63%. The general population's median PFS (mPFS) was 22 months (mo), while mOS were not reached. Patients treated with abemaciclib in combination with AI and fulvestrant had a mPFS of 36 and 19 mo, respectively. The most common toxicities were diarrhea, asthenia, and neutropenia detected in 63%,49%, and 49% of patients. The number of concomitant medications and comorbidities were not associated with survival outcomes (22 vs 17 mo, p = 0.068, p = 0.99). Drug-PIN tier from dark yellow to red and Drug-PIN score >12 were associated with shorter PFS compared to no/low-risk DDIs and score <12 (15 vs 23, p = 0.005, p = 0.0017). Drug interaction was confirmed as an independent biomarker in a multivariate model (p = 0.02). No difference in any grade AE, severe toxicities, and diarrhea were detected among different age subgroups. No association was found between Drug-PIN score or Drug-PIN tier and overall toxicity (p = 0.44), severe AEs (p = 0.11), or drug reduction (p = 0.27). The efficacy and safety of abemaciclib plus ET were confirmed in a real-world setting, even in the elderly population and patients with comorbidities. Evaluation of DDIs with Drug-PIN appears to be an independent predictor of PFS., (© 2024. The Author(s).)

Published
2024
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47. Phosphonate-substituted porphyrins as efficient, cost-effective and reusable photocatalysts.

Author

Kechiche A, Al Shehimy S, Khrouz L, Monnereau C, Bucher C, Parola S, Bessmertnykh-Lemeune A, Rousselin Y, Cheprakov AV, and Nasri H

Abstract

Recent advances in visible light photocatalysis represent a significant stride towards sustainable catalytic chemistry. However, its successful implementation in fine chemical production remains challenging and requires careful optimization of available photocatalysts. Our work aims to structurally modify bioinspired porphyrin catalysts, addressing issues related to their laborious synthesis and low solubility, with the goal of increasing their efficiency and developing reusable catalytic systems. We have demonstrated the catalytic potential of readily available meso -tetrakis[4-(diethoxyphosphoryl)phenyl]porphyrins (M(TPPP)). Novel metal (Pd(II), Co(II) and In(III)) complexes with this ligand were prepared in good yields. These chromophores were characterized in solution using spectroscopic (NMR, UV-vis, fluorescence) and electrochemical methods. The introduction of phosphonate groups on the phenyl substituents of meso -tetraphenylporphyrins (M(TPP)) improves solubility in polar organic solvents without significantly altering the photophysical properties and photostability of complexes. This structural modification also leads to easier reductions and harder oxidations of the macrocycle for all investigated complexes compared to the corresponding TPP derivatives. The free base porphyrin, zinc(II), palladium(II), and indium(III) complexes were studied as photocatalysts for oxidation of sulfides to sulfoxides using molecular oxygen as a terminal oxidant. Both dialkyl and alkyl aryl sulfides were quantitatively transformed into sulfoxides under blue LED irradiation in the acetonitrile-water mixture (10 : 1 v/v) with a low loading (0.005-0.05 mol%) of porphyrin photocatalysts, where H 2 (TPPP) and Pd(TPPP) were found to be the most efficient. The reaction mechanism was studied using photoluminescence and EPR spectroscopies. Then, to access reusable catalysts, water-soluble derivatives bearing phosphonic acid groups, H 2 (TPPP-A) and Pd(TPPP-A), were prepared in high yields. These compounds were characterized using spectroscopic methods. Single-crystal X-ray diffraction analysis of Pd(TPPP-A) reveals that the complex forms a 3D hydrogen-bonded organic framework (HOF) in the solid state. Both H 2 (TPPP-A) and Pd(TPPP-A) were found to catalyze the photooxidation of sulfides by molecular oxygen in the acetonitrile-water mixture (1 : 1 v/v), while only Pd(TPPP-A) resulted in selective production of sulfoxides. The complex Pd(TPPP-A) was easily recovered through extraction in the aqueous phase and successfully reused in five consecutive cycles of the sulfoxidation reaction.

Published
2024
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48. Surface modification effect on contrast agent efficiency for X-ray based spectral photon-counting scanner/luminescence imaging: from fundamental study to in vivo proof of concept.

Author

Cuau L, Akl P, Gautheron A, Houmeau A, Chaput F, Yaromina A, Dubois L, Lambin P, Karpati S, Parola S, Rezaeifar B, Langlois JB, Si-Mohamed SA, Montcel B, Douek P, and Lerouge F

Subjects
Mice, Animals, X-Rays, Luminescence, Mice, Nude, Phantoms, Imaging, Contrast Media, Tomography, X-Ray Computed methods
Abstract

X-Ray imaging techniques are among the most widely used modalities in medical imaging and their constant evolution has led to the emergence of new technologies. The new generation of computed tomography (CT) systems - spectral photonic counting CT (SPCCT) and X-ray luminescence optical imaging - are examples of such powerful techniques. With these new technologies the rising demand for new contrast agents has led to extensive research in the field of nanoparticles and the possibility to merge the modalities appears to be highly attractive. In this work, we propose the design of lanthanide-based nanocrystals as a multimodal contrast agent with the two aforementioned technologies, allowing SPCCT and optical imaging at the same time. We present a systematic study on the effect of the Tb 3+ doping level and surface modification on the generation of contrast with SPCCT and the luminescence properties of GdF 3 :Tb 3+ nanocrystals (NCs), comparing different surface grafting with organic ligands and coatings with silica to make these NCs bio-compatible. A comparison of the luminescence properties of these NCs with UV revealed that the best results were obtained for the Gd 0.9 Tb 0.1 F 3 composition. This property was confirmed under X-ray excitation in microCT and with SPCCT. Moreover, we could demonstrate that the intensity of the luminescence and the excited state lifetime are strongly affected by the surface modification. Furthermore, whatever the chemical nature of the ligand, the contrast with SPCCT did not change. Finally, the successful proof of concept of multimodal imaging was performed in vivo with nude mice in the SPCCT taking advantage of the so-called color K-edge imaging method.

Published
2024
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49. Programming crack patterns with light in colloidal plasmonic films.

Author

Thorimbert F, Odziomek M, Chateau D, Parola S, and Faustini M

Abstract

Crack formation observed across diverse fields like geology, nanotechnology, arts, structural engineering or surface science, is a chaotic and undesirable phenomenon, resulting in random patterns of cracks generally leading to material failure. Limiting the formation of cracks or "programming" the path of cracks is a great technological challenge since it holds promise to enhance material durability or even to develop low cost patterning methods. Drawing inspiration from negative phototropism in plants, we demonstrate the capability to organize, guide, replicate, or arrest crack propagation in colloidal films through remote light manipulation. The key consists in using plasmonic photothermal absorbers to generate "virtual" defects enabling controlled deviation of cracks. We engineer a dip-coating process coupled with selective light irradiation enabling simultaneous deposition and light-directed crack patterning. This approach represents a rare example of a robust self-assembly process with long-range order that can be programmed in both space and time., (© 2024. The Author(s).)

Published
2024
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50. Gadolinium K-edge angiography with a spectral photon counting CT in atherosclerotic rabbits.

Author

Boccalini S, Dessouky R, Rodesch PA, Lacombe H, Yagil Y, Lahoud E, Erhard K, Brendel B, Coulon P, Langlois JB, Chaput F, Parola S, Boussel L, Lerouge F, Si-Mohamed S, and Douek PC

Subjects
Animals, Rabbits, Angiography, Contrast Media, Abdomen, Gadolinium, Tomography, X-Ray Computed methods
Abstract

Purpose: The purpose of this study was to investigate the feasibility of gadolinium-K-edge-angiography (angio-Gd-K-edge) with gadolinium-based contrast agents (GBCAs) as obtained with spectral photon counting CT (SPCCT) in atherosclerotic rabbits., Materials and Methods: Seven atherosclerotic rabbits underwent angio-SPCCT acquisitions with two GBCAs, with similar intravenous injection protocol. Conventional and angio-Gd-K-edge images were reconstructed with the same parameters. Regions of interest were traced in different locations of the aorta and its branches. Hounsfield unit values, Gd concentrations, signal-to-noise (SNR) and contrast-to-noise (CNR) were calculated and compared. The maximum diameter and the diameter of the aorta in regard to atherosclerotic plaques were measured by two observers. Images were subjectively evaluated regarding vessels' enhancement, artefacts, border sharpness and overall image quality., Results: In the analyzable six rabbits, Gd-K-edge allowed visualization of target vessels and no other structures. HU values and Gd concentrations were greatest in the largest artery (descending aorta, 5.6 ± 0.8 [SD] mm), and lowest in the smallest (renal arteries, 2.1 ± 0.3 mm). While greater for conventional images, CNR and SNR were satisfactory for both images (all P < 0.001). For one observer there were no statistically significant differences in either maximum or plaque-diameters (P = 0.45 and all P > 0.05 in post-hoc analysis, respectively). For the second observer, there were no significant differences for images reconstructed with the same parameters (all P < 0.05). All subjective criteria scored higher for conventional images compared to K-edge (all P < 0.01), with the highest scores for enhancement (4.3-4.4 vs. 3.1-3.4)., Conclusion: With SPCCT, angio-Gd-K-edge after injection of GBCAs in atherosclerotic rabbits is feasible and allows for angiography-like visualization of small arteries and for the reliable measurement of their diameters., Competing Interests: Declaration of Competing Interest Yoad Yagil PhD, Elias Lahoud PhD, Klaus Erhard PhD, Bernhard Brendel PhD and Philippe Coulon PhD are employees of Philips Healthcare., (Copyright © 2023. Published by Elsevier Masson SAS.)

Published
2023
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