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Structural properties of Ge nanocrystals synthesized by a PVD nanocluster source

Authors :
Abdelilah Slaoui
Laure Guétaz
H. Szambolics
J. Bartringer
S. Parola
Etienne Quesnel
Viviane Muffato
Jung, Marie-Anne
Institut d'Electronique du Solide et des Systèmes (InESS)
Centre National de la Recherche Scientifique (CNRS)
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
Direction de Recherche Technologique (CEA) (DRT (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Source :
Journal of Nanoparticle Research, Journal of Nanoparticle Research, 2012, 14, pp.1085_1-9
Publication Year :
2012
Publisher :
Springer Science and Business Media LLC, 2012.

Abstract

In this study, the synthesis of Ge nanoparticles by a physical vapour deposition (PVD) nanocluster source has been investigated. We typically obtain Ge nanoparticles with a mean diameter between 4 and 9 nm. The microstructure of Ge nanoparticles was widely studied by high resolution transmission electron microscopy, energy filtered transmission electron microscopy, X-ray diffraction and Raman spectroscopy. The main result is the capability of the PVD process to synthesize well crystallized Ge nanocrystals at room temperature and without any post thermal annealing. It was found from Raman analysis that these room temperature deposited nanoparticles are composed of a Ge crystalline core and a sub-nm thick amorphous Ge shell. A low temperature annealing (450 °C) during 1 h under vacuum leads to the reorganization of the surface atoms while longer annealing seems to promote the formation of a Ge oxide shell around the nanoparticles.

Details

ISSN :
1572896X and 13880764
Volume :
14
Database :
OpenAIRE
Journal :
Journal of Nanoparticle Research
Accession number :
edsair.doi.dedup.....9a4c0daa312ca8b3d05345c5d62ab5b0
Full Text :
https://doi.org/10.1007/s11051-012-1085-0