1. TEM studies of Ge nanocrystal formation in PECVD grown SiO2:Ge/SiO2multilayers
- Author
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Atilla Aydinli, S. Ağan, Aykutlu Dana, and Aydınlı, Atilla
- Subjects
Electron energy analyzers ,Materials science ,Nitrogen ,Annealing (metallurgy) ,Micrographs ,Analytical chemistry ,Oxide ,chemistry.chemical_element ,Germanium ,X ray analysis ,Plasma enhanced chemical vapor deposition ,chemistry.chemical_compound ,Electron diffraction ,Germanosilicate-oxide ,Nanocrystal formation ,Plasma-enhanced chemical vapor deposition ,Silicon compounds ,General Materials Science ,Electron energy-loss spectroscopy ,Electron energy loss spectroscopy ,Nanostructured materials ,Condensed Matter Physics ,Multilayers ,Nanocrystal ,chemistry ,Transmission electron microscopy ,Film growth - Abstract
WOS: 000238592500011 We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900 degrees C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750 degrees C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850 degrees C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.
- Published
- 2006