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This work reports the memristive properties of solution-processable cobalt oxide nanoparticles (CoO NPs) for resistive memory application. The memristive current–voltage hysteresis loop with good bipolar-resistive switching (BRS) property was shown by the developed device. Substantiate to this, the asymmetric device charge and double-valued charge–magnetic flux characteristics were calculated from the experimental electrical data and demonstrated the existence of the non-ideal memristor properties. The CoO memristive device can switch up to 103 BRS cycles and can retain the data up to 5 × 103 s. The switching uniformity of the CoO memory device was elucidated by a cumulative probability distribution and statistical calculations. The low-resistance state shows little variation whereas broad variation was observed for high-resistance state. The theoretical model fitting results suggested that the conduction in the device during high-resistance sate was due to the Schottky and space charge-limited current and Ohmic current dominated in the low-resistance state. The formation and rupture of conductive filament with the assistance of interfacial dynamic is a possible reason for BRS in the CoO NPs-based memristive device.

Tin (II) monosulfide (SnS) films were prepared via sulfurization using sputtered Sn precursors of the tin metal layers in the presence of elemental sulfur vapor as a function of sulfurization time (ts) in the range of 30–180 min while keeping other parameters constant. The properties of these sulfurized layers were examined through suitable characterization techniques. The diffraction patterns exhibited various planes with the orientations (110), (120), (021), (101), (111), (211), (131), (210), (141), (002), (112), (122), and (042) corresponding to orthorhombic SnS at ts ≤ 90 min. However, for ts ≥ 120 min, the diffraction patterns showed a single (111) plane and enhanced the intensity of the peak with the increase of ts up to 150 min, with further increase of time, the peak intensity was found to decrease. The Raman spectra of films sulfurized at various ts showed modes at 95, 162, 189, 219, and 284 cm−1 for times were lower than 120 min and 95, 189, and 219 cm−1 for ts ≥ 120 min, related to SnS. In the transmittance spectra of the sulfurized films, it is clear that the film grown at ts = 30 min had higher transmittance, and with the increase of ts to 120 min, transmittance was decreased. For further extension of ts to 150 min, a sharp falling of the absorption edge was observed.