Bipolar-resistive switching and memristive properties of solution-processable cobalt oxide nanoparticles

This work reports the memristive properties of solution-processable cobalt oxide nanoparticles (CoO NPs) for resistive memory application. The memristive current–voltage hysteresis loop with good bipolar-resistive switching (BRS) property was shown by the developed device. Substantiate to this, the asymmetric device charge and double-valued charge–magnetic flux characteristics were calculated from the experimental electrical data and demonstrated the existence of the non-ideal memristor properties. The CoO memristive device can switch up to 103 BRS cycles and can retain the data up to 5 × 103 s. The switching uniformity of the CoO memory device was elucidated by a cumulative probability distribution and statistical calculations. The low-resistance state shows little variation whereas broad variation was observed for high-resistance state. The theoretical model fitting results suggested that the conduction in the device during high-resistance sate was due to the Schottky and space charge-limited current and Ohmic current dominated in the low-resistance state. The formation and rupture of conductive filament with the assistance of interfacial dynamic is a possible reason for BRS in the CoO NPs-based memristive device.