Back to Search
Start Over
Bipolar-resistive switching and memristive properties of solution-processable cobalt oxide nanoparticles
- Source :
- Journal of Materials Science: Materials in Electronics. 31:9695-9704
- Publication Year :
- 2020
- Publisher :
- Springer Science and Business Media LLC, 2020.
-
Abstract
- This work reports the memristive properties of solution-processable cobalt oxide nanoparticles (CoO NPs) for resistive memory application. The memristive current–voltage hysteresis loop with good bipolar-resistive switching (BRS) property was shown by the developed device. Substantiate to this, the asymmetric device charge and double-valued charge–magnetic flux characteristics were calculated from the experimental electrical data and demonstrated the existence of the non-ideal memristor properties. The CoO memristive device can switch up to 103 BRS cycles and can retain the data up to 5 × 103 s. The switching uniformity of the CoO memory device was elucidated by a cumulative probability distribution and statistical calculations. The low-resistance state shows little variation whereas broad variation was observed for high-resistance state. The theoretical model fitting results suggested that the conduction in the device during high-resistance sate was due to the Schottky and space charge-limited current and Ohmic current dominated in the low-resistance state. The formation and rupture of conductive filament with the assistance of interfacial dynamic is a possible reason for BRS in the CoO NPs-based memristive device.
- Subjects :
- 010302 applied physics
Work (thermodynamics)
Materials science
business.industry
Schottky diode
Nanoparticle
Memristor
Condensed Matter Physics
Thermal conduction
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Resistive random-access memory
law
0103 physical sciences
Optoelectronics
Electrical and Electronic Engineering
business
Ohmic contact
Cobalt oxide
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........1a7171da1491c88e1840cdd4e31007f8