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For many years, Si1−yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective bandgap and strain engineering and can improve the carrier mobilities, which makes Si1−x−yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1−x−yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical–mechanical polishing, giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1−x−yGeySnx alloys by Sn ion beam implantation into Si1−yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro-Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1−yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1−x−yGeySnx with up to 2.3 at. % incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1−yGey films by masking unstructured regions on the chip, thus demonstrating the realization of vertical as well as lateral Si1−x−yGeySnx heterostructures by Sn ion implantation and flash lamp annealing. [ABSTRACT FROM AUTHOR]

Ge1−xSnx and Si1−x−yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective bandgap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the complementary metal-oxide-semiconductor technology. Unfortunately, the equilibrium solid solubility of Sn in Si1−xGex is less than 1% and the pseudomorphic growth of Si1−x−yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post-growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, x-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall-effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4 × 1019 cm−3. [ABSTRACT FROM AUTHOR]

This work investigates the physical properties of Al1−xScxN thin films sputtered at low temperatures by varying the process conditions. Specifically, the films were deposited at room temperature by applying a radio frequency power equal to 150 W to an AlSc alloy (60:40) target, varying the nitrogen flux percentage in the (Ar + N2) sputtering atmosphere (30%, 40%, 50%, and 60%) and keeping constant the working pressure at 5 × 10−3 mbar. The structural and chemical properties of the Al1−xScxN films were studied by x-ray diffraction and Rutherford backscattering spectrometry techniques, respectively. The piezoelectric response was investigated by piezoresponse force microscopy. In addition, the surface potential was evaluated for the first time for Sc-doped AlN thin films by Kelvin probe force microscopy, providing piezoelectric coefficients free from the no-piezoelectric additional effect to the mechanical deformation, i.e., the electrostatic force. By alloying AlN with scandium, the piezoelectric response was strongly enhanced (up to 200% compared to undoped AlN), despite the low deposition temperature and the absence of any other additional energy source supplied to the adatoms during thin film growth, which generally promotes a better structural arrangement of polycrystalline film. This is a strategic result in the field of microelectromechanical systems completely fabricated at low temperatures. [ABSTRACT FROM AUTHOR]

Optimizing thermal anneals of Si-implanted β-Ga2O3 is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga2O3 at concentrations from 5 × 1018 to 1 × 1020 cm−3, demonstrating full activation (>80% activation, mobilities >70 cm2/V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga2O3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 1018, 5 × 1019, and 1 × 1020 cm−3. Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga2O3 stability, pO2 must be greater than 10−9 bar. Anneals up to pO2 = 1 bar achieve full activation at 5 × 1018 cm−3, while 5 × 1019 cm−3 must be annealed with pO2 ≤ 10−4 bar, and 1 × 1020 cm−3 requires pO2 < 10−6 bar. Water vapor prevents activation and must be maintained below 10−8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 1019 cm−3 and occurs rapidly at 1 × 1020 cm−3. Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga2O3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase. [ABSTRACT FROM AUTHOR]

The postsynthetic metalation (PSM) of metal-organic frameworks (MOFs) with intrinsic metal binding sites is an intriguing strategy to introduce catalytic function into MOFs. The spatial distribution of the catalytic sites within the MOF crystal will affect the efficiency of the material, but the factors that govern depth distribution of the introduced metal sites are often not well understood. Herein, we employ Rutherford backscattering spectrometry (RBS) to investigate the metal distribution in a series of post-synthetically metalated mixed linker bpdc/BPY UiO-67 (UiO = Universitet i Oslo, bpdc = biphenyl-dicarboxylate, BPY = 2,2'-bipyridine-5,5'-dicarboxylate) single crystals as a function of linker ratio and metalation time. The RBS spectra reveal large differences in the depth distribution of inserted Ni2+ ions, and core/shell architectures are observed in high BPY materials at shorter incubation times. The incubation times to achieve uniform metal incorporation increases with increasing BPY ratios in the materials, suggesting that the presence of the BPY linkers slow down metal uptake. We propose a combination of ionic interactions and pore clogging, where coordinated ions reduce the available pore space for further ions to diffuse deeper into the framework as reasons for the observed trends. The observations are likely relevant for other mixed-linker MOF systems, and understanding the effect that linker ratios have on PSM and cation distribution will aid in future optimizations of catalytic MOFs. [ABSTRACT FROM AUTHOR]

The article reviews recent advancements in X-ray fluorescence (XRF) spectrometry, focusing on improvements in 3D chemical imaging and the development of specialized instruments. Topics include the progress in XRF spectrometry computed tomography, advancements in confocal XRF techniques, and the expanding applications of these methods in material science and cultural heritage.

Ceramics and single crystals of LaPO4 monazite doped with Eu(III) were irradiated with 14 MeV Au5+ ions at three different fluences. Changes to crystallinity, local coordination environments, and topography were probed using grazing-incidence X-ray diffraction (GIXRD), vertical scanning interferometry (VSI), scanning electron microscopy (SEM), Raman, and luminescence spectroscopy. GIXRD data of the ceramics revealed fluence dependent amorphization. A similar level of amorphization was detected for samples irradiated with 5 × 1013 ions/cm2 and 1 × 1014 ions/cm2, whereas the sample irradiated with the highest fluence of 1 × 1015 ions/cm2 appeared slightly less amorphous. VSI showed clear swelling of entire grains at the highest ion fluence, while more localized damage to grain boundaries was detected for ceramic samples irradiated at the lowest fluence. Single crystal specimens showed no pronounced topography changes following irradiation. SEM images of the ceramic irradiated at the highest fluence showed topological features indicative of grain surface melting. Raman and luminescence data showed a different degree of disorder in polycrystalline vs. single crystal samples. While changes to PO4 vibrational modes were observed in the ceramics, changes were more subtle or not present in the single crystals. The opposite was observed when probing the local Ln-O environment using Eu(III) luminescence, where the larger changes in terms of an elongation of the Eu-O (or La-O) bond and an increasing relative disorder with increasing fluence were observed only for the single crystals. The dissimilar trends observed in irradiated single crystals and ceramics indicate that grain boundary chemistry likely plays a significant role in the radiation response. [ABSTRACT FROM AUTHOR]

Tailoring of the stoichiometry, crystallinity, and microstructure of manganese oxides (MnOx) is of utmost importance for technological applications in the field of catalysis, energy storage, and water splitting. In this work, α‐Mn2O3, α‐Mn3O4, and MnO thin films with defined stoichiometric compositions and crystal structures were prepared by calcination of an anodically electrodeposited Mn‐oxyhydroxide precursor film in different gas atmospheres (air, inert, or reducing gas). The crystal structure and composition of the precursor and product films were determined by combining X‐ray diffraction, transmission electron microscopy, Raman spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection analysis. The anodically electrodeposited precursor film consists of nanocrystals of α‐Mn3O4 dispersed in an amorphous MnOOH matrix phase, and can be fully transformed into either crystalline α‐Mn2O3, α‐Mn3O4, or MnO upon calcination in an oxidizing, inert or reducing atmosphere, respectively. In situ high‐temperature X‐ray diffraction was applied to derive the phase transformation kinetics, resulting in a corresponding activation energy which decreases in the order α‐Mn2O3 (268 kJ/mole) > MnO (102 kJ/mole) > α‐Mn3O4 (60 kJ/mole). The disclosed synthesis routes for the preparation of single‐phase MnOx films with a defined crystal structure and stoichiometry can be exploited for a wealth of applications. [ABSTRACT FROM AUTHOR]

β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In this work, we investigate the crystal lattice recovery of (2 ¯ 01) -oriented β-Ga2O3 crystals implanted with Yb ions to the fluence of 1 ×1014 at/cm2. Post-implantation annealing at a range of temperature and different atmospheres was used to investigate the β-Ga2O3 crystal structure recovery and optical activation of Yb ions. Ion implantation is a renowned technique used for material doping, but in spite of its many advantages such as the controlled introduction of dopants in concentrations exceeding the solubility limits, it also causes damage to the crystal lattice, which strongly influences the optical response from the material. In this work, post-implantation defects in β-Ga2O3:Yb crystals, their transformation, and the recovery of the crystal lattice after thermal treatment have been investigated by channeling Rutherford backscattering spectrometry (RBS/c) supported by McChasy simulations, and the optical response was tested. It has been shown that post-implantation annealing at temperatures of 700–900 °C results in partial crystal lattice recovery, but it is accompanied by the out-diffusion of Yb ions toward the surface if the annealing temperature and time exceed 800 °C and 10 min, respectively. High-temperature implantation at 500–900 °C strongly limits post-implantation damage to the crystal lattice, but it does not cause the intense luminescence of Yb ions. This suggests that the recovery of the crystal lattice is not a sufficient condition for strong rare-earth photoluminescence at room temperature and that oxygen annealing is beneficial for intense infrared luminescence compared to other tested environments. [ABSTRACT FROM AUTHOR]

Li–Al–O materials are interesting for several applications. Herein, a Li–Al–O thin‐film materials library, deposited by inert magnetron sputtering and postdeposition annealing in O2 atmosphere, is used to study the effects of different annealing temperatures (300–850 °C) and durations (1 min to 7 h) on crystallinity and composition of the films. X‐ray photoelectron spectroscopy depth profiling reveals inhomogeneous compositional depth profiles of conventionally annealed films (300–650 °C, 3–7 h) with increased Li contents toward the film surface and increased Al contents toward the film–substrate interface, as confirmed by a combination of Rutherford backscattering spectrometry and deuteron‐induced nuclear reaction analysis. The minimum temperature for the formation of crystalline LiAlO2 in the otherwise amorphous films is 550 °C. The undesired inhomogeneous depth profiles are transformed into homogeneous ones by rapid thermal annealing (750–850 °C, 1–10 min), while simultaneously causing the formation of crystalline LiAlO2. Therefore, rapid thermal annealing is shown to be more suitable than conventional annealing for the thermal processing of Li–Al–O thin films. Moreover, this conclusion is expected to have broader relevance beyond Li–Al–O materials, as it is likely to apply to other Li metal oxides, of which there are many technologically relevant ones. [ABSTRACT FROM AUTHOR]

Polycrystalline zinc oxide (ZnO) thin films were deposited on soda-lime glass substrates using the chemical spray pyrolysis method at three different substrate temperatures: 400, 450, and 500 °C. The solvents used in the precursor solution consisted of either ethanol or methanol. The effects of these solvents on the compositional, structural, morphological, electrical, and optical properties were studied with different techniques, including Rutherford Backscattering Spectrometry (RBS), X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), four-point method, and Ultraviolet and Visible Spectroscopy (Uv-Vis). The results show that both temperature and the type of solvent modify the properties of the materials. An essential outcome of the study was that at 500 °C, the ZnO thin films prepared with either ethanol or methanol exhibited almost the same high-quality crystallinity, stoichiometry, average crystallite size, energy band gap, and resistivity. These findings contribute to our understanding of the properties of these materials and their potential applications. [ABSTRACT FROM AUTHOR]

In this research work, nanocomposites of CuO/TiO2 were initially fabricated using drop casting method. Later on, these nanocomposites were irradiated for the first time by a beam of Argon ions (Ar+) by keeping the fluence rates of 1×1014 ions cm−2, 1×1015 ions cm−2, and 1×1016 ions cm−2, respectively. In order to observe structural and optical properties of un-irradiated and irradiated nanocomposites, Raman Spectroscopy, Energy Dispersive X-ray (EDX), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Photoluminescence (PL) and Diffuse Reflectance Spectroscopy (DRS) analysis were performed. From Raman analysis, vibration modes confirmed the presence of different phases of TiO2 and CuO. EDX analysis clearly demonstrates the presence of Cu, Ti, and O peaks. SEM images depict agglomerated spherical nanoparticles having diameters in the range of 40–94nm. From TEM analysis, mean diameter of 56.1nm is observed for unirradiated and 33.7nm for Ar+ irradiated CuO/TiO2 nanoparticles in nanocomposite for fluence rates of 1×1014 ions cm−2, 1×1015 ions cm−2, and 1×1016 ions cm−2. HR-TEM and SAED images represent the polycrystalline nature of these nanocomposites.Among the three peaks of PL spectra in UV–Visible region, first two peaks were observed at 356nm, and 419nm but the third peak is little shifted from 488nm with the increase in fluence rate. Values of band gap are reduced from 3.29eV to 3.17eV as the fluence rate is increased, as calculated from results of diffuse reflectance spectroscopy. [ABSTRACT FROM AUTHOR]

Atomic layer deposited (ALD) TiO2 layers are implanted with N, O, and Ar ions to reduce the bandgap, thereby increasing its absorbance in the visible region. The implantation is accomplished with 40 keV nitrogen, 45 keV oxygen, and 110 keV argon ions in the fluence range 1 × 1015 to 5.6 × 1016 ions cm−2. The energy of each incident ion is tuned using stopping and range of ions in matter (SRIM) to produce defects around the same projected range. The structural analysis of the as‐deposited film is performed through X‐ray diffraction (XRD), scanning electron microscopy (SEM), Rutherford backscattering (RBS), and time of flight elastic recoil detection analysis (ToF‐ERDA). The implanted layers are characterized using diffuse reflectance spectroscopy (DRS) and Fourier transform infrared spectroscopy (FTIR) to study the optical and vibrational properties of the films. The results demonstrate that nitrogen implantation in TiO2 reduces the reflectance from 43.52% to 26.31% and bandgap from 2.68 to 2.61 eV, making it a promising bandgap‐engineered material for capping layers in solar cell applications. The refractive index of the 40 keV nitrogen ion implanted film at 1 × 1016 ions cm−2 (N‐16) increases from ≈2.8 to ≈2.95. OPAL2 solar cell simulations show that the N‐16 implanted TiO2 anti‐reflective coatings (ARC) can enhance the absorbed photocurrent by 7.3%. [ABSTRACT FROM AUTHOR]

The possibility of surface passivation of silicon by hyperdoping with Se and laser annealing was evaluated by x-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy. Silicon layers hyperdoped with Se were formed by Si implantation (140 keV, 6.1∙1015 cm–2) followed by pulsed laser annealing (PLA) (λ = 694 nm, W = 2.0 J/cm2, τ = 70 ns). The Se concentration in the subsurface region (2.0–2.5 nm) was 0.67% (3.35∙1020 cm–3). The high Se concentration could be attributed to its accumulation in the subsurface region during PLA to form Si–Se bonds. According to XPS, Se–O bonds did not form in the subsurface implanted layer during PLA. The chosen laser pulse energy density of W = 2 J/cm2 allowed high structural perfection (>91%) to be achieved and a high Se concentration (>69%) at the Si lattice sites to be attained. [ABSTRACT FROM AUTHOR]

This study investigates the practices and rules of Genoese gilding, drawing insights from a 16th-century manuscript containing regulations for gold leaf production. Employing X-ray and ion beam techniques, we quantitatively assess the manuscript's gold leaf thickness without destructive sampling. Artisanal goldbeater-produced leaves of different thicknesses, applied with a guazzo or mordant technique, served as standards. Further analysis of samples with unknown thickness from the furniture of Palazzo Spinola di Pellicceria in Genoa (Italy) has confirmed the method's applicability to practical cases. External beam Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) analyses were carried out using 3 MeV protons at the LABEC accelerator laboratory in Florence. A linear relationship between Gold Lα peak yield and leaf thickness, as measured by RBS, has been established for optimal calibration of portable or hand-held X-Ray fluorescence (XRF) instrumentation for in situ measurements. Moreover, the caratage of the gold foil preserved in the manuscript has been assessed. [ABSTRACT FROM AUTHOR]

Germanium–tin (GeSn) alloys at sufficiently high Sn concentration, above several atomic percent, are the only group IV semiconductor exhibiting a direct bandgap and have generated much recent interest for optoelectronic applications into the mid-infrared region. Because the large lattice mismatch between GeSn and Si results in considerable strain for thin layers and a high defect density for thicker strain-relaxed layers, most reported GeSn growths incorporate a Ge buffer layer rather than depositing directly on Si substrates. Published reports of GeSn growth directly on Si utilize specialized precursors such as higher order germanes (Ge2H6, Ge3H8, or Ge4H10) or SnD4. In this paper, we report GeSn films with up to 10.6% Sn grown directly on Si substrates by remote plasma-enhanced chemical vapor deposition using GeH4 and SnCl4 precursors. These alloys have been characterized in detail using x-ray diffraction (XRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry with channeling (RBS-C), as well as Raman spectroscopy (RS) and optical microscopy. The films studied are almost fully relaxed, with small residual strain observed, particularly in thinner films, and contain a high interface density of misfit dislocations that increases with Sn concentration. The defect density decreases toward the surface. Good agreement is found between the various characterization methods for the Sn content (XRD and RBS-C), lattice parameter measurement (XRD and TEM), and defect characterization (RBS-C, TEM, and RS). Such characterization of GeSn grown directly on Si substrates is essential to allow growth parameters to be optimized for the realization of the attractive optoelectronic properties of these alloys. [ABSTRACT FROM AUTHOR]

Epitaxial cubic (100) 3C-SiC films on a (100) silicon wafer were irradiated at room temperature with 2.3-MeV Si+ or 3.0-MeV Kr+ ions up to a fluence of 1 × 1016 cm−2. The evolutions of the epilayer and the substrate were followed as a function of ion fluence by using micro-Raman spectroscopy, optical absorption, and diffuse reflectance spectroscopy in the UV-visible and near infrared range. Raman spectra evidence the amorphization of SiC films at an estimated dose of about 0.1 displacement per atom (dpa) for both ion irradiations. The narrow peaks of the Raman-allowed TO and LO modes of SiC and Si are recorded in the virgin sample, together with few peaks assigned to zone-edge modes of SiC arising from the intrinsic disorder in the strained films. Those crystal phonon peaks broaden or disappear with increasing fluence. The spectra finally exhibit broad extra peaks assigned to the formation of Si–Si and C–C wrong homonuclear bonds in the local order of the amorphous phase. The optical transmission and diffuse reflectance spectra feature interference fringe patterns in the SiC film that are smoothened out with irradiation due to the matching of refractive indices of the amorphous SiC film and Si substrate. The evolution of the refractive index of SiC and optical gap of Si are deduced from those spectra. The respective roles of ballistic effects and electronic excitations in the radiation damage of both SiC and Si are discussed for those two ions with about the same electronic stopping power and about one order-of-magnitude difference in nuclear stopping power. The damage is dominated by the nuclear collision processes and rather well correlated with the estimated irradiation dose in dpa. Optical spectra show that electronic excitations induce damage recovery of the amorphized substrate below the SiC/Si interface. Raman spectra and optical absorption/reflection spectra yield complementary pictures of the radiation damage. [ABSTRACT FROM AUTHOR]

We investigate terahertz time-domain spectroscopy (THz-TDS) as a non-destructive and non-contact technique for depth profiling of dopants in semiconductors. THz temporal waveforms transmitted through silicon-ion-implanted semi-insulating gallium arsenide substrates, as-implanted or post-annealed by rapid thermal annealing, were analyzed by assuming a multi-layered Gaussian refractive index profile in the ∼sub-micrometer-thick implantation region. The implantation energy and dosages in this work were 200 KeV, 1014, 5 × 1014, and 1015 ions/cm2, respectively. The average values of real (n) and imaginary (κ) parts of refractive indices of an as-implanted sample in the depth range of 0–800 nm are 5.8 and 0.7, respectively, at 0.5 THz and are 6.2 and 0.2, respectively, at 1 THz. On the other hand, the refractive index profile of the post-annealed samples displays a prominent Gaussian-like form, and peak refractive indices (n ∼ 25 and κ ∼ 32.7 at 0.5 THz and n, κ ∼17 at 1 THz) were found to be at the depth of 210 nm. Reconstructed dopant profiles in as-implanted, implanted, and post-annealed substrates were found to be in good agreement with measurements by secondary ion mass spectroscopy as well as simulation by the Monte Carlo method. We were also able to determine accurately the projected range (Rp), straggle (Rs), and concentration of dopants by the analysis of THz-TDS data. The spatial resolution, along the depth direction, of the THz-TDS technique for depth profiling of dopants was estimated to be as small as 8-nm. This work suggests the feasibility of using THz-TDS for nondestructive and non-contact diagnostics for profiling dopants in semiconductors. [ABSTRACT FROM AUTHOR]

Desired modifications of surfaces at the nanoscale may be achieved using energetic ion beams. In the present work, a complete study of self-assembled ripple pattern fabrication on Si and Ge by 100 keV Ar+ ion beam bombardment is discussed. The irradiation was performed in the ion fluence range of ≈3 × 1017 to 9 × 1017 ions/cm2 and at an incident angle of θ ≈ 60° with respect to the surface normal. The investigation focuses on topographical studies of pattern formation using atomic force microscopy, and induced damage profiles inside Si and Ge by Rutherford backscattering spectrometry and transmission electron microscopy. The ripple wavelength was found to scale with ion fluence, and energetic ions created more defects inside Si as compared to that of Ge. Although earlier reports suggested that Ge is resistant to structural changes upon Ar+ ion irradiation, in the present case, a ripple pattern is observed on both Si and Ge. The irradiated Si and Ge targets clearly show visible damage peaks between channel numbers (1000–1100) for Si and (1500–1600) for Ge. The clustering of defects leads to a subsequent increase of the damage peak in irradiated samples (for an ion fluence of ≈9 × 1017 ions/cm2) compared to that in unirradiated samples.

Microfluidic devices play a crucial role in advanced cell biology applications, including cell separations, cultivations, migration and interaction studies, diagnostic devices, and organ‐on‐chips. One of the frequent purposes of such devices is the ability to selectively address the attachment of cells at defined locations on the surface. This study explores the application of middle‐energy carbon, oxygen, and nitrogen ions to locally modify the surface of cyclic olefin copolymer (COC) thermoplastic material, allowing selective cell growth on patterned polymer surfaces. The investigation considers ion element type, ion beam energy, and ion irradiation fluence, analyzing their influence on the modification effect. Characterization of the modified surfaces involves various surface‐analytical methods such as contact angle, energy dispersive spectroscopy (SEM‐EDX), atomic force microscopy (AFM), x‐ray photoelectron spectroscopy (XPS), rutherford backscattering spectrometry (RBS), and elastic recoil detection analysis (ERDA). The study extends to practical aspects, with a representative cancer cell line, MCF‐7, grown on the patterned surface to evaluate the degree of selective attachment. Additionally, the stability of the irradiated patterns is tested under elevated temperatures beyond the glass transition temperature (Tg), demonstrating the compatibility of the approach with hot embossing technology. The findings underscore the potential of ion beam treatment for COC in cell‐biology‐related applications, offering insights into surface modification techniques for enhanced functionality in microfluidic devices. [ABSTRACT FROM AUTHOR]

Silicon carbide has been considered a material for use in the construction of advanced high-temperature nuclear reactors. However, one of the most important design issues for future reactors is the development of structural defects in SiC under a strong irradiation field at high temperatures. To understand how high temperatures affect radiation damage, SiC single crystals were irradiated at room temperature and after being heated to 800 °C with carbon and silicon ions of energies ranging between 0.5 and 21 MeV. The number of displaced atoms and the disorder parameters have been estimated by using the channeling Rutherford backscattering spectrometry. The experimentally determined depth profiles of induced defects at room temperature agree very well with theoretical calculations assuming its proportionality to the electronic and nuclear-stopping power values. On the other hand, a significant reduction in the number of crystal defects was observed for irradiations performed at high temperatures or for samples annealed after irradiation. Additionally, indications of saturation of the crystal defect concentration were observed for higher fluences and the irradiation of previously defected samples. [ABSTRACT FROM AUTHOR]

TiO2 thin films are synthesized by using DC magnetron sputtering system on Si (100) substrates and then annealed in a muffled furnace at 450 °C. Annealed samples are irradiated with carbon ions accelerated at the energy of 300 keV at various carbon ion doses of 4.2 × 1012, 6.3 × 1013, 1.2 × 1014 and 2.5 × 1014 ions/cm2. Structural and optical properties are studied by using different techniques such as x-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, scanning electron microscopy, photo-luminescence spectroscopy and diffuse reflectance spectroscopy (DRS). The results show that structural and optical properties of the thin films modify with the amount of carbon ion doses. The synthesized thin film without ions irradiation has the rutile phase preferably, and by increasing the ion dose, it is changing into the anatase phase. Smaller crystallite size results in to the agglomeration process, and however, crystal size decreases with ion dose. PL spectra also confirm the formation of anatase phase from the rutile phase and different energy states due to the carbon ion implantation within the TiO2 phase. The creation of energy states are linked with defects induced into the thin films and are required to improve the photocatalytic properties due to the hopping mechanism. DRS results show that bandgap of the pure TiO2 thin film is 2.4 eV and it decreases to 2.1 eV by increasing the carbon ions dose. The achievement of this small band gap is attributed to the decrease in crystallite sizes and the defects induced by the ion implantation. [ABSTRACT FROM AUTHOR]

This research addresses an analytical methodology to quantify elements of interest in fusion‐relevant materials using secondary ion mass spectrometry (SIMS). For this purpose, internal standards have been fabricated by ion implantation to avoid the well‐known matrix effect of this technique. In particular, chromium has been implanted at an energy of 12 MeV using two fluences in high‐purity iron and tungsten matrices together with Si control substrates. The latter were applied to determine the Cr concentration implanted through experimental and semiempirical methods. Specifically, the IBA technique Rutherford backscattering spectrometry (RBS) provided the quantitative results being 3.1 × 1019 at/cm3 and 1.6 × 1019 at/cm3 for the high and low dose, respectively. The SIMS depth profiles of Cr for the Fe and W matrices established an ion implantation depth close to 2 μm on both substrates in agreement with the calculations previously performed by Stopping and Range of Ions in Matter (SRIM) simulations. Correlation between the integration of SIMS profiles and known concentrations of the implanted ion resulted in the calibration curve for each matrix, obtaining the SIMS quantification approach by means of this relative sensitivity factor (RSF). Additionally, a cross‐check of the method by comparing commercial Fe‐Cr alloys with the Cr‐implanted Fe matrices of the present study pointed out the need to produce standards with higher chromium concentrations. [ABSTRACT FROM AUTHOR]

In this work, effect of changing deposition rate on the structural properties, chemical bonds and wettability of the silicon carbon oxynitride thin films applied by radio frequency magnetron sputtering method on the silicon substrate was evaluated. GIXRD and Raman spectroscopy were performed in order to study the structure of the thin films and the formation of nanocrystals in the structure, respectively. The type of chemical bonds on the surface of the thin films were determined by ATR-FTIR Analysis. XPS was used to investigate the type of elements and the ratio of bonds formed in the structure of SiCON thin film. FESEM test was used to determine the surface morphology of the thin films. The ellipsometry test was conducted with the aim of checking the optical parameters of the thin films. Also, FTIR was used to determine the reflectivity of the samples in the infrared region. The roughness of the thin films was determined by an AFM test. The surface wettability of the thin films was evaluated by measuring the contact angle of the water droplet. The results of the GIXRD and Raman spectroscopy proved that thin films are nanocomposite with amorphous matrix and SiC reinforcement nanocrystalline particles. The ATR-FTIR determined the presence of hydrogen in the structure. FESEM test showed the formation of dense thin layer without any cracks. The results of the ellipsometry test proved that refractive index of the thin films changed with the change in the deposition rate in the range of 1.45–1.49. Also, AFM results showed that SiCON thin films are formed with very low surface roughness in the RMS range of 0.80–1.64 nm. Also, water contact angle measurement test determined that the thin films are hydrophilic. [ABSTRACT FROM AUTHOR]

In this work, two types of nanoporous alumina membranes were prepared and tested. Structural features of the samples obtained by using different acids were investigated by scanning electron microscopy (SEM). And further SEM-images were analyzed by different types of fractal dimension estimation methods. The transmission and scattering of accelerated He+ ions were studied in experiments on the ion irradiation of dielectric channels based on porous alumina. An ion accelerator was used as a source of the He+ beam with an energy of 1.7 MeV. Ion scattering was studied by Rutherford backscattering spectrometry. Helium transition through nanoporous alumina at various angles between the normal to the sample and the beam direction were observed. It is shown that the porous structure of anodic aluminum oxide is excellent as a dielectric matrix of nanocapillaries. Owing to the small angle scattering, it allows for the transportation of the accelerated charged particles through the dielectric capillaries, and, as a result, the localization of high energy ion irradiation effects. Additionally, according to the transmission of UV–V is spectra, the energy gaps of samples obtained were calculated. [ABSTRACT FROM AUTHOR]

In this study, we investigate the antibacterial effect of silver atoms implanted into a thin surface layer of titanium at low energies using an alternative ion plating technology called Diversified Ion Plating. Silver atoms were incorporated into titanium samples using reactive low-voltage ion plating at 2 keV and 4 keV. Surface modifications and morphology were evaluated using wettability, profilometry measurements, and energy-dispersive spectroscopy. For a precise determination of the quantity and depth of implanted silver atoms on titanium surfaces, a combination of experimental techniques such as Rutherford Backscattering Spectrometry along with Monte Carlo simulations were utilized. To assess the antibacterial effects of the silver atoms incorporated into pure titanium surfaces, bacterial suspension immersion tests were performed with a standard strain of Staphylococcus aureus (ATCC 12600). The outcomes indicate that titanium surfaces implanted with silver atoms were more effective in inhibiting the growth of Staphylococcus aureus than pure titanium surfaces. Better results were found when the deposition was performed at 4 keV, indicating that a deeper implantation of silver, spanning a few nanometers, can result in a longer and more effective release of silver atoms. These findings suggest the potential for the development of new, cost-effective biomaterials, paving the way for improved implant materials in various health-related applications. [ABSTRACT FROM AUTHOR]

Today, BaFBr crystals activated by europium ions are used as detectors that store absorbed energy in metastable centers. In these materials, the image created by X-ray irradiation remains stable in the dark for long periods at room temperature. As a result, memory image plates are created, and they are extended to other types of ionizing radiation as well. Despite significant progress towards X-ray storage and readout of information, the mechanisms of these processes have not been fully identified to date, which has hindered the efficiency of this class of phosphors. In this study, using photoluminescence (PL), optical absorption (OA), Raman spectroscopy (RS), and atomic force microscopy (AFM), the luminescence of oxygen vacancy defects to BaFBr crystals irradiated with 147 MeV 84Kr and 24.5 MeV 14N ions at 300 K to fluences (1010–1014) ion/cm2 was investigated. BaFBr crystals were grown by the Shteber method on a special device. Energy-dispersive X-ray spectroscopy (EDX) analysis revealed the presence of Ba, Br, F, and O. The effect of oxygen impurities present in the studied crystals was considered. The analysis of the complex PL band, depending on the fluence and type of ions, showed the formation of three types of oxygen vacancy defects. Macrodefects (tracks) and aggregates significantly influence the luminescence of oxygen vacancy defects. The creation of hillocks and tracks in BaFBr crystals irradiated with 147 MeV 84Kr ions is shown for the first time. Raman spectra analysis confirmed that BaFBr crystals were amorphized by 147 MeV 84Kr ions due to track overlap, in contrast to samples irradiated with 24.5 MeV 14N ions. Raman and absorption spectra demonstrated the formation of hole and electron aggregate centers upon swift heavy ions irradiation. [ABSTRACT FROM AUTHOR]

Thermochromic vanadium dioxide (VO2) undergoes a reversible semiconductor‐to‐metal transition, a property that can be exploited for reduction of the energy consumption in buildings using smart windows. Herein, high‐performance thermochromic three‐layer ZrO2/V0.98W0.02O2/ZrO2 coatings prepared on ultrathin flexible glass (0.1 mm) without any post annealing in a pilot‐scale roll‐to‐roll deposition device are presented. The V0.98W0.02O2 layers are deposited using a reactive high‐power impulse magnetron sputtering with an oxygen flow control at a substrate temperature of approximately 350 °C. The optimized coatings (width of 0.3 m and length over 2.6 m) exhibit a transition temperature of 28 °C, an integral luminous transmittance over 50%, and a modulation of the solar energy transmittance of about 10%. The deposition process is optimized, and the elemental composition (Rutherford backscattering spectrometry), design (field‐emission scanning electron microscopy), phase composition (X‐ray diffraction), and thermochromic properties (spectrophotometry) of these high‐performance VO2‐based coatings in the context of potential for commercial applications are characterized. [ABSTRACT FROM AUTHOR]

The use of nanoparticles has significantly increased in many areas, such as biomedical research, being highly useful as nanoprobes for imaging and as nanocarriers for drug delivery applications. Nevertheless, this potential can only be achieved with the correct characterization of the nanoparticles, since their size and shape can directly affect their biological behavior. In this study, we propose a novel approach for a monolayer deposition of gold and platinum nanoparticles on Si substrates suitable for medium energy ion scattering (MEIS) analysis. The samples were prepared using poly(ethylene glycol) 6000 (PEG 6000) as a coating agent for the substrates, utilizing a spin coater-a versatile, cost-effective, and practical technique. The samples were first analyzed with the RBS technique to assess the adhesion and the overlapping of the nanoparticles in the substrates coated with PEG 6000 and then characterized through the MEIS technique. The analysis through MEIS allowed the determination of the shape, size, and coverage area of the nanoparticles. Scanning and transmission electron microscopy were also performed on the samples, with the results corroborating the findings of the MEIS experiment. Together, the data obtained with microscopy and the MEIS technique suggests the effectiveness of the method in the production of monolayer samples. [ABSTRACT FROM AUTHOR]

In this work, a two‐dimensional (2D) waveguide on the 6.0 × 106‐eV C3+‐ion implanted RbTiOPO4 structure was prepared by the femtosecond laser under the manufacturing parameters of 3.0 μJ energy and 50.0 μm/s ablation velocity. The energy loss and damage profile were simulated by the SRIM 2013 for the irradiation with a fluence of 1 × 1014 ions/cm2. The end‐face and the surface of the 2D RbTiOPO4 crystal waveguide were characterized by a Nikon microscope. The refractive index profile and the near‐field intensity profile were studied by the ICM and the end‐face coupling technique, respectively. The RTP crystal 2D waveguide can well confine the light propagation and has the potentiality to serve as integrated photonic devices. [ABSTRACT FROM AUTHOR]

Optical and structural properties of silicon layers implanted with indium and arsenic ions and annealed by laser pulses were investigated. It is shown with the use of the Rutherford backscattering and channeling methods that the fraction of indium and arsenic atoms in the silicon crystal lattice of such a layer comprises 31–35%. It was established by the radiation absorption spectra of the indicated layers that the degree of absorption of the near-infrared radiation (1.1–2.4 μm) by them is larger by several orders of magnitude than that of these layers in the initial state with no implantation and annealing (the absorption efficiency comprises 50–60%). The efficiency of absorption of the mid-infrared radiation quanta (3–25 μm) by a silicon layer implanted with indium and arsenic ions is higher by approximately three times than that of the initial one at a laser radiation energy density of 2.0–2.5 J/cm2. A broad band 1.1–1.6 μm has been revealed in the photoluminescence spectra of the silicon layers implanted with indium and arsenic ions and annealed by laser pulses. [ABSTRACT FROM AUTHOR]

Pb based group-IV alloys such as GePb have been gaining interest as a potential alternative for infrared detectors, quantum materials, and high-speed electronic devices. Challenges remain in their growth due to the extremely low solid solubility of Pb in the Ge–Pb system. This paper reports molecular beam epitaxy growth of GePb alloy thin films on Ge(100) substrates. Effusion cells of Ge and Pb are used to control the flux ratio independently. The optimal substrate temperature is found to be near the thermocouple temperature of 300 °C based on the characterization of the grown films using high-resolution x-ray diffraction. A large change in the Ge:Pb beam equivalent pressure ratio from 10:1 to 1:1 results in only a minimal increase of the Pb composition from 0.74% to 2.84% as estimated from Raman spectroscopy and Rutherford backscattering spectrometry. Scanning electron microscopy images show a large volume of Pb islands on the surface that form into either long trapezoidal rods or uniform droplets, with increasing Pb flux and growth time the density of Pb islands increased. [ABSTRACT FROM AUTHOR]

N incorporation mechanisms in GaAs1−xNx alloys are probed using combined experimental and computational Rutherford backscattering spectrometry and nuclear reaction analysis angular yield scans. For xN < 0.025, in addition to substitutional nitrogen, NAs, (N-N)As, and (N-As)As split-interstitials are observed. However, for xN ≥ 0.025, evidence for N tetrahedral interstitials, Ntetra, emerges. We propose a mechanism for stabilization of Ntetra in which the elastic interaction between Ntetra and NAs is induced by the opposite signs of their misfit volumes. This work opens opportunities for exploring the formation of Ntetra and its influence on the properties of a variety of highly mismatched alloys. [ABSTRACT FROM AUTHOR]

In this study, GeOx thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at how the temperature of the substrate affected the Raman spectra and optical characteristics of GeOx thin films. X-ray diffraction was utilized to examine the crystal structure, and a scanning electron microscope was utilized to measure the thickness. In order to investigate the local structure and bonding characteristics, Raman spectroscopy was used. The refractive index, extinction coefficient, and dielectric parameters were calculated using spectroscopic ellipsometry for the 300–1100 nm spectral region. Refractive index and extinction coefficient spectral patterns were discovered by using a sample-air optical model to analyze the experimental ellipsometric data. Notably, a considerable rise in the refractive index was accompanied by a rise in substrate temperature. [ABSTRACT FROM AUTHOR]

The surface morphology modification and optical property modification of semi-insulating gallium arsenide sample implanted with 100 keV silicon ions with the fluences ranging between 5 × 10 1 5 and 4 × 10 1 7 ion cm − 2 were analyzed using scanning electron microscopy and UV–Vis–NIR spectroscopy study. Scanning electron microscopy study revealed pore-like structure formation on the surface of gallium arsenide samples after silicon ion implantation. The size of these pore-like structures was found to increase with increasing ion fluence. Energy dispersive X-ray analysis showed an increase in silicon concentration in the gallium arsenide sample after silicon ion implantation with increasing ion fluence. The UV–Vis–NIR spectroscopy study revealed a decrease in optical transmission for silicon ion implanted gallium arsenide sample with increasing ion fluence. An additional absorption band was observed for the gallium arsenide sample implanted with the highest fluence (4 × 10 1 7 ion cm − 2). Urbach tail energy was found to increase with respect to ion fluence. [ABSTRACT FROM AUTHOR]

The present investigation reports the swift heavy ion induced effects on cerium oxide (CeO2) thin films. These thin films were deposited on Si (111) substrates by the electron-beam evaporation method and irradiated by a 100 MeV O7+ ion beam with different ion fluences. X-ray diffraction analysis of these films confirms the stable fluorite phase of CeO2 even after the higher fluence of irradiations. Raman measurement also supports the presence of the F2g phase of CeO2 and the presence of defect states. The Gaussian deconvolution of photoluminescence (PL) spectra reveals various defect-associated peaks. The broad peaks in the PL spectra are associated with oxygen vacancies and are red-shifted (494–520 nm) with ion fluences. The surface morphological images show the modification in the surface roughness with ion irradiation and the re-growth of smaller circular-formed nanoparticles on the surface is observed at the fluence of 5 × 1011 ions/cm2. Magnetic measurements show an enhancement in magnetic ordering with ion irradiation. All the samples demonstrate room temperature ferromagnetism with magnetic saturation (Ms) up to 14.57 emu/cm3. The saturation magnetization in irradiated thin films is directly correlated to the area under the peak of defect-associated PL emission. The mechanism such as the oxygen vacancy-based F-center exchange model is considered to understand the enhancement of ferromagnetism in ion irradiated CeO2 thin films. Some popular theoretical models are also employed to determine various magnetic parameters. [ABSTRACT FROM AUTHOR]

Tailoring the blue photoluminescence (PL) in Al-doped ZnO (AZO)/TiO2 heterostructures is demonstrated by a controlled induction of shallow defect centers by 50 keV Ar+-ions. This is established by a combination of temperature dependent PL and electron paramagnetic resonance spectroscopy. The dominant blue-violet PL in an as-grown sample comprises a near band-edge emission, along with a peak associated with a radiative recombination of the electrons in shallow donor levels (Zn interstitials) and the holes from the valence band. However, the evolution of an additional yellow-green PL band at a fluence of 1 × 1015 ions/cm2 is governed by deep donor levels, particularly ionized oxygen vacancies. Irradiation at 1 × 1016 ions/cm2 further leads to the formation of Zn vacancies (shallow acceptors) owing to the development of an O-rich surface. The structural modifications of these samples have been investigated by field-emission scanning electron microscopy , transmission electron microscopy, and Rutherford backscattering. While small micro-cracks are found at a fluence of 2 × 1016 ions/cm2, the formation of graded layers is obtained at the highest fluence of 5 × 1016 ions/cm2 owing to ballistic intermixing and diffusion of the constituents. Detailed investigation suggests that a significant amount of Ti atoms is diffused in AZO by a complete deterioration of the AZO/TiO2 matrix at the highest fluence. [ABSTRACT FROM AUTHOR]

Strain engineering has been widely applied to tune the performance of oxide thin film based devices. To precisely regulate the strain state of the thin film, nevertheless, still remains a challenging task. Herein, we demonstrate that the uniaxial strain along the c-axis of epitaxial SrCoO2.5 (SCO) (001) thin film can be continuously controlled by low-energy helium (He) irradiation (5 keV), leading to noticeable enhancement in resistive switching (RS) performance. All the irradiated SCO thin films exhibit out-of-plane tensile strain due to the implanted He interstitials in the lattice, and the strain increases linearly from 0.447% to 2.785% as the ion fluence increases from 1 × 1014 to 1 × 1015 ion/cm2. Although all the irradiated SCO-based devices follow similar conductive filaments mechanism as the pristine device, the performance shows a volcano shape dependence on the irradiation fluence. The device subjected to irradiation of 1 × 1014 ion/cm2 shows the optimal performance with the highest ON/OFF ratio and good endurance. Such dependence of RS behavior on irradiation-induced uniaxial strain is attributed to the widely observed nonlinear dependence of oxygen migration on the elastic tensile strain. Our results provide an effective strategy to regulate the strain states and the correlating functionality of oxide thin films. [ABSTRACT FROM AUTHOR]

Microstructural changes induced by helium implantation in materials lead to volumetric swelling and mechanical property changes. How these properties are linked and establishing direct relationships can be difficult due to the underlying material's microstructure evolution. Some materials also experience a phase change due to irradiation damage making them even more complex to analyze. Here, single crystalline Si (100) was used to establish a relationship among these parameters. The swelling height as a function of implantation fluence can equally fit a linear relationship. Solely irradiation induced defects are observed at low fluence below 5.0 × 1016 ions/cm2. An abrupt amorphous and crystalline mixed layer of ∼200 nm thick within a highly damaged polycrystalline matrix is observed when implantation fluence exceeds 5.0 × 1016 ions/cm2, leading to the appearance of irradiation induced swelling and hardening behavior. As the fluence increases beyond 1.0 × 1017 ions/cm2, the amorphous layer expands in size and the bubble size distribution takes the form of a Gaussian distribution with a maximum size of up to 6.4 nm, which causes a further increase in the height of swelling. Furthermore, irradiation induced softening appeared due to the enlarged bubble size and amorphization. [ABSTRACT FROM AUTHOR]

Mixed organic–inorganic halide perovskite-based solar cells have attracted interest in recent years due to their potential for both terrestrial and space applications. Analysis of interfaces is critical to predicting device behavior and optimizing device architectures. Most advanced tools to study buried interfaces are destructive in nature and can induce further degradation. Ion beam techniques, such as Rutherford backscattering spectrometry (RBS), is a useful non-destructive method to probe an elemental depth profile of multilayered perovskite solar cells (PSCs) as well as to study the inter-diffusion of various elemental species across interfaces. Additionally, PSCs are becoming viable candidates for space photovoltaic applications, and it is critical to investigate their radiation-induced degradation. RBS can be simultaneously utilized to analyze the radiation effects induced by He+ beam on the device, given their presence in space orbits. In the present work, a 2 MeV He+ beam was used to probe the evidence of elemental diffusion across PSC interfaces with architecture glass/ITO/SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3/spiro-OMeTAD/MoO3/Au. During the analysis, the device active area was exposed to an irradiation equivalent of up to 1.62 × 1015 He+/cm2, and yet, no measurable evidence (with a depth resolution ∼1 nm) of beam-induced ion migration was observed, implying high radiation tolerance of PSCs. On the other hand, aged PSCs exhibited indications of the movement of diverse elemental species, such as Au, Pb, In, Sn, Br, and I, in the active area of the device, which was quantified with the help of RBS. [ABSTRACT FROM AUTHOR]

Polarization imaging is a label-free and non-invasive technique that is sensitive to microstructure and suitable for probing the microstructure of living tissues. However, obtaining deep-layer information from tissues has been a challenge for optical techniques. In this work, we used tissue optical clearing (TOC) to increase optical penetration depth and characterize the layered structures of tissue samples. Different tissue phantoms were constructed to examine changes in the polarization features of the layered structure during the TOC process. We found that depolarization and anisotropy parameters were able to distinguish between single-layer and double-layer phantoms, reflecting microstructural information from each layer. We observed changes in polarization parameter images during the TOC process and, by analyzing different regions of the images, explained the sensitivity of these parameters to double-layer structures and analyzed the influence of oblique incident illumination. Finally, we conducted TOC experiments on living skin samples, leveraging the experience gained from phantom experiments to identify the double-layer structure of the skin and extract features related to layered structures. The results show that the combination of backscattering polarization imaging and tissue optical clearing provides a powerful tool for the characterization of layered samples. [ABSTRACT FROM AUTHOR]

Improving materials for energy conversion and storage devices is deeply connected with an optimization of their surfaces and surface modification is a promising strategy on the way to enhance modern energy technologies. This study shows that surface modification with ultra-thin oxide layers allows for a systematic tailoring of the surface dipole and the work function of mixed ionic and electronic conducting oxides, and it introduces the ionic potential of surface cations as a readily accessible descriptor for these effects. The combination of X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) illustrates that basic oxides with a lower ionic potential than the host material induce a positive surface charge and reduce the work function of the host material and vice versa. As a proof of concept that this strategy is widely applicable to tailor surface properties, we examined the effect of ultra-thin decoration layers on the oxygen exchange kinetics of pristine mixed conducting oxide thin films in very clean conditions by means of in-situ impedance spectroscopy during pulsed laser deposition (i-PLD). The study shows that basic decorations with a reduced surface work function lead to a substantial acceleration of the oxygen exchange on the surfaces of diverse materials. Improving materials for energy devices relates to an optimisation of their surfaces. Here authors show that surface modification with ultrathin oxide layers allows for a tailoring of the surface dipole and the work function of mixed ionic and electronic conducting oxides. [ABSTRACT FROM AUTHOR]

Critical to boosting photoelectrochemical (PEC) performance is improving visible light absorption, accelerating carrier separation, and reducing electron–hole pair recombination. In this investigation, the PVD/RF method was employed to fabricate WO3 thin films that were subsequently treated using the surface treatment process, and the film surface was modified by introducing varying concentrations of cobalt nanoparticles, a non-noble metal, as an effective Co catalyst. The results show that the impact of loaded cobalt nanoparticles on the film surface can explain the extended absorption spectrum of visible light, efficiently capturing photogenerated electrons. This leads to an increased concentration of charge carriers, promoting a faster rate of carrier separation and enhancing interface charge transfer efficiency. Compared with a pristine WO3 thin film photoanode, the photocurrent of the as-prepared Co/WO3 films shows a higher PEC activity, with more than a one-fold increase in photocurrent density from 1.020 mA/cm2 to 1.485 mA/cm2 under simulated solar radiation. The phase, crystallinity, and surface of the prepared films were analysed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The PVD/RF method, scanning electron microscopy (FE-SEM), and high-resolution transmission electron microscopy (HR-TEM) were employed to assess the surface morphology of the fabricated film electrode. Optical properties were studied using UV–vis absorbance spectroscopy. Simultaneously, the photoelectrochemical properties of both films were evaluated using linear sweep voltammetry and electrochemical impedance spectroscopy (EIS). These results offer a valuable reference for designing high-performance photoanodes on a large scale for photoelectrochemical (PEC) applications. [ABSTRACT FROM AUTHOR]

Polyvinylidenefluoride (PVDF) is a semi‐crystalline ferroelectric polymer with a wide range of interesting properties and shows potentiality in a variety of technological applications. Flexible thin films of PVDF nanocomposites (NCs) have attracted many researchers due to their tunable electronic properties. This paper reports the synthesis, characterization, and dielectric studies of PVDF‐TiO2 NC thin films. The synthesized films are self‐supporting thin and the average thickness of the thin films is 60 µm measured using a Digital thickness gauge of resolution 0.01 mm. TiO2 nanoparticles are prepared using the combustion method. Commercially available PVDF granules are used to develop PVDF‐TiO2 NC thin films using the film casting technique. The structural study of the prepared thin films is carried out using XRD that confirms the retention of the β‐phase of PVDF. The functional group and bonding nature have been studied using FTIR Spectroscopy. The thermal stability of the NC thin films is studied using TGA. The variation of dielectric constant (DC), dielectric loss (DL), AC conductivity, and dissipation factor of the medium of pristine PVDF and PVDF‐TiO2 NC thin films are studied in the frequency range of 10 Hz to 8 MHz at ambient temperature. The dielectric constant of PVDF‐TiO2 NC thin films increases up to 8 wt% and anomaly for 10 wt% of TiO2 fillers in the PVDF matrix at a lower frequency and found to decrease with increasing frequency. The dielectric loss of NC thin films is high at a lower frequency and decreases with an increase in the frequency that is in good agreement with the Maxwell–Wagner type of interfacial polarization. At lower frequencies, the dielectric constant of PVDF‐TiO2 NC increases with the increase in filler content. AC conductivity shows a sharp increase at higher frequencies whereas the dissipation factor of the polymer NCs remains unaltered with respect to frequency by maintaining the trend. This suggests that PVDF‐TiO2 NC is potential material for energy storage devices. [ABSTRACT FROM AUTHOR]

Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (β-Ga2O3) wafers, having ( 2 ¯ 01) , (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV 28Si+-ions, applying fluences in the range of 1 × 1014–2 × 1016 Si/cm2, unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted β-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having ( 2 ¯ 01) orientation were subjected to isochronal (30 min) anneals in the range of 300–1300 °C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 × 1016 Si/cm2 and annealed at 1100 °C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites. [ABSTRACT FROM AUTHOR]

Amorphous, ferrimagnetic Tb–Co thin films prepared with a thin Ta underlayer and either a Ta or a Pt overlayer show evidence of both soft and hard magnetic phases. At room temperature, the films exhibit conventional ferromagnetism, but low temperature magnetometry measurements reveal the decoupling of the two magnetic phases with decreasing temperature due to increased anisotropy energy of the hard layer at lower temperatures. Decreasing the film thickness to 2 nm, slightly above the superparamagnetic limit found at 1 nm, a soft, low-density phase was isolated and found to be present in all the films as confirmed with x-ray reflectivity and Rutherford backscattering spectrometry measurements. For greater thicknesses, the bottom layer retains its soft magnetic nature, while the remainder of the film is denser and has strong perpendicular magnetic anisotropy, leading to the exchange-spring behavior when the anisotropy becomes large, either at low temperatures or via a Pt overlayer that adds a strong interfacial anisotropy to the layer. Micromagnetic simulations of a soft/hard bilayer model with the experimentally determined anisotropy and magnetization parameters into a soft/hard bilayer model reproduced the experimental hysteretic behavior very well. These findings demonstrate how the magnetic state and the response of a-Tb–Co films to external fields can be controlled, providing a high degree of tunability that is promising for high-performance nanoscale devices. [ABSTRACT FROM AUTHOR]