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Quantum information transport over micron to millimeter scale distances is critical for the operation of practical quantum processors based on spin qubits. One method of achieving a long-range interaction is by coherent electron spin shuttling through an array of silicon quantum dots. In order to execute many shuttling operations with high fidelity, it is essential to understand the dynamics of qubit dephasing and relaxation during the shuttling process in order to mitigate them. However, errors arising after many repeated shuttles are not yet well documented. Here, we probe decay dynamics contributing to dephasing and relaxation of a singlet-triplet qubit during coherent spin shuttling over many $N$ repeated shuttle operations. We find that losses are dominated by magnetic dephasing for small $N<10^3$ and by incoherent shuttle errors for large $N>10^3$. Additionally, we estimate shuttle error rates below $1\times10^{-4}$ out to at least $N=10^3$, representing an encouraging figure for future implementations of spin shuttling to entangle distant qubits., Comment: 17 pages, 8 figures

The demand for lithium, as well as other critical resources, needed for electrochemical energy storage is expected to grow significantly in the future. Slags obtained from pyrometallurgical recycling represent a promising resource of valuable materials, among them lithium and rare earth elements found in artificial minerals particulate phases. This study investigates the flotation separation of engineered artificial minerals (EnAMs) in slags, such as lithium aluminate and gehlenite as valuable and gangue phases, respectively. Flotation experiments are carried out in a Partridge-Smith cell using oleic acid (OA) as a benchmark surfactant. Particle characterization is performed using SEM-based Mineral Liberation Analysis (MLA), which provides particle discrete information. From this information, bivariate Tromp functions based on non-parametric kernel density estimation are computed to characterize the separation behavior with respect to particle descriptors. This approach enables investigating the influence of particle size and shape on separation behavior of EnAMs. Furthermore, these results allow for the optimization of flotation experiments for enriching Li-bearing EnAMs.

Particle separation is typically investigated regarding one particulate property only. Virtually all separation processes, however, act on various particle properties in different ways. Modern particle analytical modalities enable a statistically meaningful multidimensional particle characterization. Within this study, individual particle fractions of magnesite, calcite and fluorite (-71 $\mu m$) are processed via the turbulent cross-flow separator cascade Cyclosizer (M16, MARC Technologies Pty Ltd), consisting of 5 hydrocyclones, thus producing 5 different product streams. Particle characterization is achieved via dynamic image analysis from which information on the particle shape and size is obtained. Using this data, bivariate Tromp functions are computed, which show the combined effect of the particle descriptors of roundness and area-equivalent diameter on the separation behavior. While the first cyclones recover predominantly coarse particles with high roundness values, fine particles with varying roundness are recovered in the latter cyclones.

Froth flotation predominantly separates particles according to their differences in wettability. However, other particle properties such as size, shape or density significantly influence the separation outcome as well. Froth flotation is most efficient for particles within a size range of about $20-200\mu m$, but challenges arise for very fine or coarse particles that are accompanied by low recoveries and poor selectivity. While the impact of particle size on the separation behavior in flotation is well-known by now, the effect of particle shape is less studied and varies based on the investigated zone (suspension or froth) and the separation apparatus used. A multidimensional perspective on the separation process, considering multiple particle properties, enhances the understanding of their collective influence. In this paper the two-dimensional case is studied, i.e., a parametric modeling approach is applied to determine bivariate Tromp functions from scanning electron microscopy-based image data of the feed and the separated fractions. With these functions it is possible to characterize the separation behavior of particle systems. Using a model system of ultrafine ($<10\mu m$) particles, consisting of differently shaped glass particles with different wettability states as the floatable and magnetite as the non-floatable fraction, allows for investigating the influence of particle size, shape and wettability, on the separation. In this way, the present paper contributes to a better understanding of the complex interplay between certain property vectors for the case of ultrafine particles. Furthermore, it demonstrates the benefits of using multivariate Tromp functions for evaluating separation processes, and points out the limitations of SEM based image measurements by means of mineral liberation analysis (MLA) for the studied particle size fraction.

In this paper, we present a novel method for integrating 3D LiDAR depth measurements into the existing ORB-SLAM3 by building upon the RGB-D mode. We propose and compare two methods of depth map generation: conventional computer vision methods, namely an inverse dilation operation, and a supervised deep learning-based approach. We integrate the former directly into the ORB-SLAM3 framework by adding a so-called RGB-L (LiDAR) mode that directly reads LiDAR point clouds. The proposed methods are evaluated on the KITTI Odometry dataset and compared to each other and the standard ORB-SLAM3 stereo method. We demonstrate that, depending on the environment, advantages in trajectory accuracy and robustness can be achieved. Furthermore, we demonstrate that the runtime of the ORB-SLAM3 algorithm can be reduced by more than 40 % compared to the stereo mode. The related code for the ORB-SLAM3 RGB-L mode will be available as open-source software under https://github.com/TUMFTM/ORB SLAM3 RGBL., Comment: Accepted at ICCCR 2023

We apply the Ionization Region Model (IRM) and the Orsay Boltzmann equation for ELectrons coupled with Ionization and eXcited states kinetics (OBELIX) model to study the electron kinetics of a high power impulse magnetron sputtering (HiPIMS) discharge. In the IRM the bulk (cold) electrons are assumed to exhibit a Maxwellian energy distribution and the secondary (hot) electrons, emitted from the target surface upon ion bombardment, are treated as a high energy tail, while in the OBELIX the electron energy distribution is calculated self-consistently using an isotropic Boltzmann equation. The two models are merged in the sense that the output from the IRM is used as an input for OBELIX. The temporal evolutions of the particle densities are found to agree very well between the two models. Furthermore, a very good agreement is demonstrated between the bi-Maxwellian electron energy distribution assumed by the IRM and the electron energy distribution calculated by the OBELIX model. It can therefore be concluded that assuming a bi-Maxwellian electron energy distribution, constituting a cold bulk electron group and a hot secondary electron group, is a good approximation for modeling the HiPIMS discharge.

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a $1/f^{\alpha}$ dependence consistent with $\alpha \sim 0.7$, over 9 orders of magnitude in noise frequency., Comment: Supplementary information included with the paper

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS., Comment: The conference proceedings version incorrectly displays the orientation of the magnetic field in figure 1; this version is correct

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics in the form of transients and discrete jumps that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a $1/f$ noise dependence, and a noise strength as low as $1~\mathrm{\mu eV/\sqrt{Hz}}$, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or $1/f$ noise.

The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $\mu$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise., Comment: Submitted July 13, 2017. Supplementary information included with the paper

The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach., Comment: Supplementary information is included with the paper

Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from a new experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both the new experiment and a recently reported one. Through sampling millions of realistic cases of interface roughness, our method provides evidence that, despite radically different processing, the valley physics between the two samples is essentially the same. This work provides the first evidence that valley splitting can be deterministically predicted and controlled in metal oxide semiconductor quantum dots, a critical requirement for such systems to realize a reliable qubit platform., Comment: 7 pages, 4 figures

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit., Comment: Published version