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Magnetotransport properties of an electron channel at the heteroboundary in type II separated p-Ga[sub 1 - x]In[sub x]As[sub y]Sb[sub 1 - y]/p-InAs heterostructures grown by LPE (x = 0.09-0.22) were studied in the temperature range of 77-300 K. It is shown that an electron channel, which is formed at the heteroboundary and has high mobility µ = (3-5) x 10[sup 4] cm² V[sup -1] s[sup -1], exists throughout the whole composition range. The band diagram of the heterostructures under study is discussed, and some parameters of the electron channel are evaluated. It is found that the electron channel with high mobility persists up to room temperature. Type II GalnAsSb/p-InAs heterostructures can find application in new Hall sensor devices with an electron channel at the heteroboundary. [ABSTRACT FROM AUTHOR]

Light-emitting diode structures operating at room temperature were obtained based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure with high Al content in the boundary layers formed on ap-GaSb(100) substrate. This structure ensures a threefold increase in the output radiant power and the external quantum yield (∼1%) as compared to the known InAsSb/InAsSbP heterostructure grown on an InAs substrate. A considerable increase in the pulsed output radiant power is explained by a more effective confinement of nonequilibrium charge carriers in the active region and by a decrease in the nonradiative recombination level, which is achieved by creating an isoperiodic structure. [ABSTRACT FROM AUTHOR]