Magnetotransport in a Semimetal Channel in p-Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] / p-InAs Heterostructures with Various Compositions of the Solid Solution.

Magnetotransport properties of an electron channel at the heteroboundary in type II separated p-Ga[sub 1 - x]In[sub x]As[sub y]Sb[sub 1 - y]/p-InAs heterostructures grown by LPE (x = 0.09-0.22) were studied in the temperature range of 77-300 K. It is shown that an electron channel, which is formed at the heteroboundary and has high mobility µ = (3-5) x 10[sup 4] cm² V[sup -1] s[sup -1], exists throughout the whole composition range. The band diagram of the heterostructures under study is discussed, and some parameters of the electron channel are evaluated. It is found that the electron channel with high mobility persists up to room temperature. Type II GalnAsSb/p-InAs heterostructures can find application in new Hall sensor devices with an electron channel at the heteroboundary. [ABSTRACT FROM AUTHOR]