19 results on '"Robert Eilhardt"'
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2. Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties
3. Epitaxy Induced Highly Ordered Sm2Co17–SmCo5 Nanoscale Thin-Film Magnets
4. Effect of Induced Stimuli on the Leakage Current of Operative Oxide-based Devices inside a TEM
5. Watching crystals grow: In situ TEM Observation of Microstructure Evolution in HfO2 Based Memristive Devices
6. Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy
7. Role of Oxygen Defects in Conductive-Filament Formation in Y 2 O 3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy
8. Transforming Transmission Electron Microscopy with MerlinEM Electron Counting Detector
9. Machine Learning Assisted Pattern Matching: Insight into Oxide Electronic Device Performance by Phase Determination in 4D-STEM Datasets
10. Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes
11. Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
12. Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching (Adv. Electron. Mater. 11/2020)
13. Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
14. Solid Electrolyte Interfaces: The Effect of Interfacial Charge Distribution on Chemical Compatibility and Stability of the High Voltage Electrodes (LiCoPO 4 , LiNiPO 4 )/Solid Electrolyte (LiPON) Interface (Adv. Mater. Interfaces 12/2020)
15. The Effect of Interfacial Charge Distribution on Chemical Compatibility and Stability of the High Voltage Electrodes (LiCoPO 4 , LiNiPO 4 )/Solid Electrolyte (LiPON) Interface
16. Olivine-LiNiPO 4 thin films: Chemical compatibility with liquid electrolyte and interface stability at high potential
17. Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO 2 -based RRAM: Towards a Component Specific in situ TEM Investigation
18. Birth of a grain boundary: In situ TEM Observation of the Microstructure Evolution in HfO 2 Based Memristors
19. Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)
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