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4. Advanced Scanning Probe Nanolithography Using GaN Nanowires

Author

Behzadirad, Mahmoud, primary, Mecholdt, Stephan, additional, Randall, John N., additional, Ballard, Joshua B., additional, Owen, James, additional, Rishinaramangalam, Ashwin K., additional, Reum, Alexander, additional, Gotszalk, Teodor, additional, Feezell, Daniel F., additional, Rangelow, Ivo W., additional, and Busani, Tito, additional

Published
2021
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5. Field emission scanning probe lithography with GaN nanowires on active cantilevers

Author

Behzadirad, Mahmoud, primary, Rishinaramangalam, Ashwin K., additional, Feezell, Daniel, additional, Busani, Tito, additional, Reuter, Christoph, additional, Reum, Alexander, additional, Holz, Mathias, additional, Gotszalk, Teodor, additional, Mechold, Stephan, additional, Hofmann, Martin, additional, Ahmad, Ahmad, additional, Ivanov, Tzvetan, additional, and Rangelow, Ivo W., additional

Published
2020
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8. High throughput AFM inspection system with parallel active cantilevers

Author

Holz, Mathias, primary, Reuter, Christoph, additional, Reum, Alexander, additional, Ahmad, Ahmad, additional, Hofmann, Martin, additional, Ivanov, Tzvetan, additional, Rangelow, Ivo W., additional, Stauffenberg, Jaqueline, additional, Manske, Eberhard, additional, Du, Chuan, additional, Zhou, Xiangqian, additional, Okamoto, Naoshi, additional, Takashima, Alon Nobuteru, additional, and Lee, Ho-Se, additional

Published
2019
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11. Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

Author

Massachusetts Institute of Technology. Department of Mechanical Engineering, Soltani Bozchalooi, Iman, Xia, Fangzhou, Youcef-Toumi, Kamal, Rangelow, Ivo W., Ivanov, Tzvetan, Ahmad, Ahmad, Kaestner, Marcus, Lenk, Claudia, Holz, Mathias, Reum, Alexander, Massachusetts Institute of Technology. Department of Mechanical Engineering, Soltani Bozchalooi, Iman, Xia, Fangzhou, Youcef-Toumi, Kamal, Rangelow, Ivo W., Ivanov, Tzvetan, Ahmad, Ahmad, Kaestner, Marcus, Lenk, Claudia, Holz, Mathias, and Reum, Alexander

Abstract

With the recent advances in the field of nanotechnology, measurement and manipulation requirements at the nanoscale have become more stringent than ever before. In atomic force microscopy, high-speed performance alone is not sufficient without considerations of other aspects of the measurement task, such as the feature aspect ratio, required range, or acceptable probe-sample interaction forces. In this paper, the authors discuss these requirements and the research directions that provide the highest potential in meeting them. The authors elaborate on the efforts toward the downsizing of self-sensed and self-actuated probes as well as on upscaling by active cantilever arrays. The authors present the fabrication process of active probes along with the tip customizations carried out targeting specific application fields. As promising application in scope of nanofabrication, field emission scanning probe lithography is introduced. The authors further discuss their control and design approach. Here, microactuators, e.g., multilayer microcantilevers, and macroactuators, e.g., flexure scanners, are combined in order to simultaneously meet both the range and speed requirements of a new generation of scanning probe microscopes., Seventh Framework Programme (European Commission) (Grant 318804), Thüringer Aufbaubank (Project 6343)

Published
2019

13. High-throughput process chain for single electron transistor devices based on field-emission scanning probe lithography and Smart Nanoimprint lithography technology

Author

Lenk, Claudia, primary, Krivoshapkina, Yana, additional, Hofmann, Martin, additional, Lenk, Steve, additional, Ivanov, Tzvetan, additional, Rangelow, Ivo W., additional, Ahmad, Ahmad, additional, Reum, Alexander, additional, Holz, Mathias, additional, Glinsner, Thomas, additional, Eibelhuber, Martin, additional, Treiblmayr, Dominik, additional, Schamberger, Barbara, additional, Chouiki, Mustapha, additional, Chan, Boon Teik, additional, el Otell, Ziad, additional, and de Marneffe, Jean-François, additional

Published
2019
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15. Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography

Author

Lenk, Claudia, primary, Hofmann, Martin, additional, Ivanov, Tzvetan, additional, Ahmad, Ahmad, additional, Lenk, Steve, additional, Rangelow, Ivo W., additional, Reum, Alexander, additional, Reuter, Christoph, additional, Holz, Mathias, additional, Behzadirad, Mahmoud, additional, Rishinaramangalam, Ashwin K., additional, Feezell, Daniel, additional, and Busani, Tito, additional

Published
2018
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16. Field-emission scanning probe lithography tool for 150 mm wafer

Author

Holz, Mathias, primary, Guliyev, Elshad, additional, Ahmad, Ahmad, additional, Ivanov, Tzvetan, additional, Reum, Alexander, additional, Hofmann, Martin, additional, Lenk, Claudia, additional, Kaestner, Marcus, additional, Reuter, Christoph, additional, Lenk, Steve, additional, Rangelow, Ivo W., additional, and Nikolov, Nikolay, additional

Published
2018
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19. Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching

Author

Lenk, Claudia, Hofmann, Martin, Lenk, Steve, Kaestner, Marcus, Ivanov, Tzvetan, Krivoshapkina, Yana, Nechepurenko, Diana, Volland, Burkhard, Holz, Mathias, Ahmad, Ahmad, Reum, Alexander, Wang, Chen, Jones, Mervyn E., Durrani, Zahid A. K., Rangelow, Ivo W., Lenk, Claudia, Hofmann, Martin, Lenk, Steve, Kaestner, Marcus, Ivanov, Tzvetan, Krivoshapkina, Yana, Nechepurenko, Diana, Volland, Burkhard, Holz, Mathias, Ahmad, Ahmad, Reum, Alexander, Wang, Chen, Jones, Mervyn E., Durrani, Zahid A. K., and Rangelow, Ivo W.

Abstract

Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the post-CMOS era. However, their fabrication relies typically on a statistical fabrication of quantum dots or positioning of nanoparticles or molecules between predefined electrodes. These methods hamper a scaled-up fabrication of RT-SETs. Here, we present a route for reproducible fabrication of RT-SETs on the basis of field-emission scanning probe lithography (FE-SPL) and cryogenic reactive ion etching. Due to the unique capabilities of our FE-SPL tool, enabling pre- and post-inspection of features, highly reliable patterning and precise feature alignment are obtained. The fabricated devices exhibit single electron effects at RT. A combination of this method with nanoimprint lithography would enable a high throughput and reproducible way of RT-SET fabrication.

Published
2018

20. Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Author

Alaca, Burhanettin Erdem (ORCID 0000-0001-5931-8134 & YÖK ID 115108); Biçer, Mahmut, Rangelow, Ivo W.; Lenk, Claudia; Hofmann, Martin; Lenk, Steve; Ivanov, Tzvetan; Ahmad, Ahmad; Kaestner, Marcus; Guliyev, Elshad; Reuter, Christoph; Budden, Matthias; Zoellner, Jens-Peter; Holz, Mathias; Reum, Alexander; Durrani, Zahid; Jones, Mervyn; Aydoğan, Cemal; Kuehnel, Michael; Frohlich, Thomas; Fuessl, Roland; Manske, E., Graduate School of Sciences and Engineering, Department of Mechanical Engineering, Alaca, Burhanettin Erdem (ORCID 0000-0001-5931-8134 & YÖK ID 115108); Biçer, Mahmut, Rangelow, Ivo W.; Lenk, Claudia; Hofmann, Martin; Lenk, Steve; Ivanov, Tzvetan; Ahmad, Ahmad; Kaestner, Marcus; Guliyev, Elshad; Reuter, Christoph; Budden, Matthias; Zoellner, Jens-Peter; Holz, Mathias; Reum, Alexander; Durrani, Zahid; Jones, Mervyn; Aydoğan, Cemal; Kuehnel, Michael; Frohlich, Thomas; Fuessl, Roland; Manske, E., Graduate School of Sciences and Engineering, and Department of Mechanical Engineering

Abstract

Cost-effective generation of single-digit nano-lithographic features could be the way by which novel nanoelectronic devices, as single electron transistors combined with sophisticated CMOS integrated circuits, can be obtained. The capabilities of Field-Emission Scanning Probe Lithography (FE-SPL) and reactive ion etching (RIE) at cryogenic temperature open up a route to overcome the fundamental size limitations in nanofabrication. FE-SPL employs Fowler-Nordheim electron emission from the tip of a scanning probe in ambient conditions. The energy of the emitted electrons (<100 eV) is close to the lithographically relevant chemical excitations of the resist, thus strongly reducing proximity effects. The use of active, i.e. self-sensing and self-actuated, cantilevers as probes for FE-SPL leads to several promising performance benefits. These include: (1) Closed-loop lithography including pre-imaging, overlay alignment, exposure, and post-imaging for feature inspection; (2) Sub-5-nm lithographic resolution with sub-nm line edge roughness; (3) High overlay alignment accuracy; (4) Relatively low costs of ownership, since no vacuum is needed, and ease-of-use. Thus, FE-SPL is a promising tool for rapid nanoscale prototyping and fabrication of high resolution nanoimprint lithography templates. To demonstrate its capabilities we applied FE-SPL and RIE to fabricate single electron transistors (SET) targeted to operate at room temperature. Electrical characterization of these SET confirmed that the smallest functional structures had a diameter of only 1.8 nanometers. Devices at single digit nano-dimensions contain only a few dopant atoms and thus, these might be used to store and process quantum information by employing the states of individual atoms., European Union (European Union); Horizon 2020; European Research Council (ERC) European Union's Seventh Framework Program; FP7/2007-2013

Published
2018

21. Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Author

Zoellner, Jens-Peter, primary, Holz, Mathias, primary, Reum, Alexander, primary, Durrani, Zahid, primary, Jones, Mervyn E., primary, Aydogan, Cemal, primary, Bicer, Mahmut, primary, Alaca, Erdem B., primary, Kuehnel, Michael, primary, Fröhlich, Thomas, primary, Manske, Eberhard, primary, Fuessl, Roland, primary, Rangelow, Ivo W., primary, Kaestner, Marcus, primary, Lenk, Claudia, primary, Ahmad, Ahmad, primary, Ivanov, Tzvetan, primary, Lenk, Steve, primary, Hofmann, Martin, primary, Guliyev, Elshad, primary, Reuter, Christoph, primary, and Budden, Matthias, primary

Published
2018
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22. Single nano-digit and closed-loop scanning probe lithography for manufacturing of electronic and optical nanodevices

Author

Rangelow, Ivo W., primary, Hofmann, Martin, primary, Ivanov, Tzvetan, primary, Lenk, Steve, primary, Kaestner, Marcus, primary, Aydogan, Cemal, primary, Bicer, Mahmut, primary, Yalcinkaya, Arda D., primary, Ahmad, Ahmad, primary, Holz, Mathias, primary, Lenk, Claudia, primary, Guliyev, Elshad, primary, Alaca, B. Erdem, primary, Ates, Onur, primary, Torun, Hamdi, primary, and Reum, Alexander, primary

Published
2018
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25. Pattern-generation and pattern-transfer for single-digit nano devices

Author

Rangelow, Ivo W., Ahmad, Ahmad, Ivanov, Tzvetan, Kaestner, Marcus, Krivoshapkina, Yana, Angelov, Tihomir, Lenk, Steve, Lenk, Claudia, Ishchuk, Valentyn, Hofmann, Martin, Nechepurenko, Diana, Atanasov, Ivaylo, Volland, Burkhard, Guliyev, Elshad, Durrani, Zahid A. K., Jones, Mervyn E., Wang, Chen, Liu, Dixi, Reum, Alexander, Holz, Mathias, Nikolov, Nikolay, Majstrzyk, Wojciech, Gotszalk, Teodor, Staaks, Daniel, Dallorto, Stefano, Olynick, Deirdre L., Rangelow, Ivo W., Ahmad, Ahmad, Ivanov, Tzvetan, Kaestner, Marcus, Krivoshapkina, Yana, Angelov, Tihomir, Lenk, Steve, Lenk, Claudia, Ishchuk, Valentyn, Hofmann, Martin, Nechepurenko, Diana, Atanasov, Ivaylo, Volland, Burkhard, Guliyev, Elshad, Durrani, Zahid A. K., Jones, Mervyn E., Wang, Chen, Liu, Dixi, Reum, Alexander, Holz, Mathias, Nikolov, Nikolay, Majstrzyk, Wojciech, Gotszalk, Teodor, Staaks, Daniel, Dallorto, Stefano, and Olynick, Deirdre L.

Abstract

Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor devices in a single system. The authors employ a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation. The F-N SPL employs a low energy electron exposure of 5–10 nm thick high-resolution molecular resist (Calixarene) resulting in single nanodigit lithographic performance [Rangelow et al., Proc. SPIE 7637, 76370V (2010)]. The followed step of pattern transfer into silicon becomes very challenging because of the extremely low resist thickness, which limits the etching depth. The authors developed a computer simulation code to simulate the reactive ion etching at cryogenic temperatures (−120 °C). In this article, the authors present the alliance of all these technologies used for the manufacturing of SETs capable to operate at room temperatures.

Published
2016

26. Scanning probe-based high-accuracy overlay alignment concept for lithography applications

Author

Ishchuk, Valentyn, primary, Guliyev, Elshad, additional, Aydogan, Cemal, additional, Buliev, Ivan, additional, Kaestner, Marcus, additional, Ivanov, Tzvetan, additional, Ahmad, Ahmad, additional, Reum, Alexander, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Nikolov, Nikolay, additional, Glinsner, Thomas, additional, and Rangelow, Ivo W., additional

Published
2016
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27. Six-axis AFM in SEM with self-sensing and self-transduced cantilever for high speed analysis and nanolithography

Author

Angelov, Tihomir, primary, Ahmad, Ahmad, additional, Guliyev, Elshad, additional, Reum, Alexander, additional, Atanasov, Ivaylo, additional, Ivanov, Tzvetan, additional, Ishchuk, Valentyn, additional, Kaestner, Marcus, additional, Krivoshapkina, Yana, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Rangelow, Ivo W., additional, Holz, Mathias, additional, and Nikolov, Nikolay, additional

Published
2016
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28. Large area fast-AFM scanning with active “Quattro” cantilever arrays

Author

Ahmad, Ahmad, primary, Nikolov, Nikolay, additional, Angelov, Tihomir, additional, Ivanov, Tzvetan, additional, Reum, Alexander, additional, Atanasov, Ivaylo, additional, Guliyev, Elshad, additional, Ishchuk, Valentyn, additional, Kaestner, Marcus, additional, Krivoshapkina, Yana, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Rangelow, Ivo W., additional, and Holz, Mathias, additional

Published
2016
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29. Pattern-generation and pattern-transfer for single-digit nano devices

Author

Rangelow, Ivo W., primary, Ahmad, Ahmad, additional, Ivanov, Tzvetan, additional, Kaestner, Marcus, additional, Krivoshapkina, Yana, additional, Angelov, Tihomir, additional, Lenk, Steve, additional, Lenk, Claudia, additional, Ishchuk, Valentyn, additional, Hofmann, Martin, additional, Nechepurenko, Diana, additional, Atanasov, Ivaylo, additional, Volland, Burkhard, additional, Guliyev, Elshad, additional, Durrani, Zahid, additional, Jones, Mervyn, additional, Wang, Chen, additional, Liu, Dixi, additional, Reum, Alexander, additional, Holz, Mathias, additional, Nikolov, Nikolay, additional, Majstrzyk, Wojciech, additional, Gotszalk, Teodor, additional, Staaks, Daniel, additional, Dallorto, Stefano, additional, and Olynick, Deirdre L., additional

Published
2016
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30. Field-Emission Scanning Probe Lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions.

Author

Rangelow, Ivo W., Lenk, Claudia, Hofmann, Martin, Lenk, Steve, Ivanov, Tzvetan, Ahmad, Ahmad, Kaestner, Marcus, Guliyev, Elshad, Reuter, Christoph, Budden, Matthias, Zöllner, Jens-Peter, Holz, Mathias, Reum, Alexander, Durrani, Zahid, Jones, Mervyn, Aydogan, Cemal, Bicer, Mahmut, Alaca, B. Erdem, Kuehnel, Michael, and Fröhlich, Thomas

Published
2018
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32. Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Author

Kaestner, Marcus, primary, Aydogan, Cemal, additional, Ivanov, Tzvetan, additional, Ahmad, Ahmad, additional, Angelov, Tihomir, additional, Reum, Alexander, additional, Ishchuk, Valentyn, additional, Krivoshapkina, Yana, additional, Hofer, Manuel, additional, Lenk, Steve, additional, Atanasov, Ivaylo, additional, Holz, Mathias, additional, and Rangelow, Ivo W., additional

Published
2015
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33. Self-actuated, self-sensing cantilever for fast CD measurement

Author

Ahmad, Ahmad, additional, Ivanov, Tzvetan, additional, Reum, Alexander, additional, Guliyev, Elshad, additional, Angelov, Tihomir, additional, Schuh, Andreas, additional, Kaestner, Marcus, additional, Atanasov, Ivaylo, additional, Hofer, Manuel, additional, Holz, Mathias, additional, and Rangelow, Ivo W., additional

Published
2015
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34. Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Author

Kaestner, Marcus, additional, Aydogan, Cemal, additional, Lipowicz, Hubert-Seweryn, additional, Ivanov, Tzvetan, additional, Lenk, Steve, additional, Ahmad, Ahmad, additional, Angelov, Tihomir, additional, Reum, Alexander, additional, Ishchuk, Valentyn, additional, Atanasov, Ivaylo, additional, Krivoshapkina, Yana, additional, Hofer, Manuel, additional, Holz, Mathias, additional, and Rangelow, Ivo W., additional

Published
2015
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35. Scanning probes in nanostructure fabrication

Author

Kaestner, Marcus, primary, Ivanov, Tzvetan, additional, Schuh, Andreas, additional, Ahmad, Ahmad, additional, Angelov, Tihomir, additional, Krivoshapkina, Yana, additional, Budden, Matthias, additional, Hofer, Manuel, additional, Lenk, Steve, additional, Zoellner, Jens-Peter, additional, Rangelow, Ivo W., additional, Reum, Alexander, additional, Guliyev, Elshad, additional, Holz, Mathias, additional, and Nikolov, Nikolay, additional

Published
2014
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36. Electric field scanning probe lithography on molecular glass resists using self-actuating, self-sensing cantilever

Author

Kaestner, Marcus, additional, Nieradka, Konrad, additional, Ivanov, Tzvetan, additional, Lenk, Steve, additional, Krivoshapkina, Yana, additional, Ahmad, Ahmad, additional, Angelov, Tihomir, additional, Guliyev, Elshad, additional, Reum, Alexander, additional, Budden, Matthias, additional, Hrasok, Tomas, additional, Hofer, Manuel, additional, Neuber, Christian, additional, and Rangelow, Ivo W., additional

Published
2014
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41. Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Author

Panning, Eric M., Sanchez, Martha I., Rangelow, Ivo W., Lenk, Claudia, Hofmann, Martin, Lenk, Steve, Ivanov, Tzvetan, Ahmad, Ahmad, Kaestner, Marcus, Guliyev, Elshad, Reuter, Christoph, Budden, Matthias, Zöllner, Jens-Peter, Holz, Mathias, Reum, Alexander, Durrani, Zahid, Jones, Mervyn, Aydogan, Cemal, Bicer, Mahmut, Alaca, B. Erdem, Kuehnel, Michael, Fröhlich, Thomas, Fuessl, Roland, and Manske, E.

Published
2018
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42. Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

Author

Marcus Kaestner, Eberhard Manske, Ahmad Ahmad, Roland Fuessl, Mahmut Bicer, Ivo W. Rangelow, Claudia Lenk, Christoph Reuter, Steve Lenk, Mathias Holz, Alexander Reum, B. Erdem Alaca, Zahid A. K. Durrani, Tzvetan Ivanov, Elshad Guliyev, Michael Kuehnel, Matthias Budden, Thomas Fröhlich, Jens-Peter Zöllner, Cemal Aydogan, Martin Hofmann, Mervyn Jones, Alaca, Burhanettin Erdem (ORCID 0000-0001-5931-8134 & YÖK ID 115108), Biçer, Mahmut, Rangelow, Ivo W., Lenk, Claudia, Hofmann, Martin, Lenk, Steve, Ivanov, Tzvetan, Ahmad, Ahmad, Kaestner, Marcus, Guliyev, Elshad, Reuter, Christoph, Budden, Matthias, Zoellner, Jens-Peter, Holz, Mathias, Reum, Alexander, Durrani, Zahid, Jones, Mervyn, Aydoğan, Cemal, Kuehnel, Michael, Frohlich, Thomas, Fuessl, Roland, Manske, E., Graduate School of Sciences and Engineering, and Department of Mechanical Engineering

Subjects
Materials science, business.industry, Transistor, Optics, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Scanning probe lithography, SPL, Nanofabrication, Calixarene, Molecular glass resist, Closed loop lithography, Nanoprobe maskless lithography, Self-developing resist, 0104 chemical sciences, law.invention, Nanoimprint lithography, Field electron emission, Nanolithography, Resist, law, Optoelectronics, Reactive-ion etching, 0210 nano-technology, business, Lithography
Abstract

Cost-effective generation of single-digit nano-lithographic features could be the way by which novel nanoelectronic devices, as single electron transistors combined with sophisticated CMOS integrated circuits, can be obtained. The capabilities of Field-Emission Scanning Probe Lithography (FE-SPL) and reactive ion etching (RIE) at cryogenic temperature open up a route to overcome the fundamental size limitations in nanofabrication. FE-SPL employs Fowler-Nordheim electron emission from the tip of a scanning probe in ambient conditions. The energy of the emitted electrons (, European Union (European Union); Horizon 2020; European Research Council (ERC) European Union's Seventh Framework Program; FP7/2007-2013

Published
2018
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