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Perpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this structure, a sub-nanometer CoFeB layer has the potential to simultaneously exhibit efficient, high speed switching in accordance with the conservation of spin angular momentum, and high thermal stability owing to the enhanced interfacial PMA that arises from the two CoFeB-MgO interfaces. However, the difficulty in attaining PMA in ultrathin CoFeB layers has imposed the use of thicker CoFeB layers which are incompatible with high speed requirements. In this work, we succeeded in depositing a functional CoFeB layer as thin as five monolayers between two MgO interfaces using magnetron sputtering. Remarkably, the insertion of Mg within the CoFeB gave rise to an ultrathin CoFeB layer with large anisotropy, high saturation magnetization, and good annealing stability to temperatures upwards of 400 °C. When combined with a low resistance-area product MgO tunnel barrier, ultrathin CoFeB magnetic tunnel junctions (MTJs) demonstrate switching voltages below 500 mV at speeds as fast as 1 ns in 30 nm devices, thus opening a new realm of high speed and highly efficient nonvolatile memory applications.

To consider STT-MRAM as an SRAM replacement, the reliability of the MTJ devices has to be demonstrated. A comprehensive study of degradation of STT-MRAM magnetic tunnel junction barrier under stress is presented in this paper. It is found that the breakdown mechanism of such devices follows a consistent path of soft breakdown (SBD) followed by hard breakdown (HBD). We discuss the strategy to improve the write margin by reducing the resistance area product (RA) of the tunnel barrier. Finally, we link our single device reliability studies to similar endurance studies performed on our fully functional chips.

Last-Level-Cache applications at OX technology nodes require devices switching reliably in less than 10ns at currents smaller than 50uA, while preserving data retention up to 85°C. In this paper, we show that both low Gilbert damping and low magnetic moment are the primary factors for efficient writing at nanosecond time scales. We report comprehensive device-level measurements of damping using both conventional free layer designs and an optimized free layer that combines low damping and low moment and meets LLC requirements.

We present for the first time STT-MRAM devices with ultra low operating voltage and power compatible with next generation 0x node logic voltages. By engineering the tunnel barrier and improving the efficiency of the devices we report a record low writing voltage of 0.17V for a 1ppm error rate, which has been achieved for a 20ns write operation using a writing current of only 35uA. We further demonstrate error rates below 10-9 at voltage and current at 0.25V and 50uA using 10ns writing pulses on the same 30nm devices with extended 400C thermal budget while preserving functionality confirm the almost unlimited endurance of these data and retention at 85°C. Finally, TDDB studies confirm the almost unlimited endurance of these devices at the operating voltage.

Scaling STT-MRAM cells beyond 1X technology nodes will require MTJ devices smaller than 30 nm. For such small sizes, process-induced damage becomes a primary factor of device performance. A robust method of assessing magnetic properties of sub-30 nm devices is thus needed. Here we report measurements of the anisotropy field H K down to 20 nm devices using ST-FMR. We show that H K increases for decreasing sizes. The interfacial anisotropy field exceeds 23 kOe, leading to Hk larger than 13 kOe for 20 nm devices under optimal process conditions. Using insight from micromagnetic simulations, we develop a simple model to fit Hk size dependence, allowing us to quantify magnetic edge damage for various process conditions.

Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthroughs that have brought perpendicular STT-MRAM to the cusp of mass production.

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a leading candidate for embedded memory applications, with promises of low power, high performance, and non-volatility.

Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is the leading technology for next generation non-volatile embedded memories [1].

We present recent advances in writing speed of pSTT_MRAM which demonstrate its potential as a candidate for replacement of LCC cache for advanced technology nodes as well as applications where non-volatility may be needed. In this paper we explore the feasibility of sub-ns switching of devices and their characterization using comprehensive time resolved electrical measurement of the reversal mechanism. We show that the switching mechanism can be described as a simple nucleation followed by propagation model that can be characterized statistically. We further demonstrate that after optimization of the Magnetic Tunnel Junction (MTJ) stack, single devices can be switched reliably using write pulse length down to 750ps while preserving functionality and data retention @ 125°C. Results of the integration at array level on an 8MB test vehicle are also presented allowing full array writing using 3ns pulses without ECC and demonstrated data retention of 10 years (1ppm) at 125°C.

Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ∼30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ∼30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.

STT-MRAM technology has been attracting renewed attention since the embedability of a working STT-MRAM design has been demonstrated [1]. In this paper we expand on the versatility of STT-MRAM by demonstrating the conversion of a standard STT-MRAM cell to a One Time Programmable (OTP) anti-fuse cell. Both designs are integrated at the Mbit level on a single chip using the same magnetic stack, processing and CMOS cell design. A single BEOL mask change can convert an STT-MRAM device to an OTP design by simply reducing its size. The increased resistance yields larger voltage drop across the device, due to the voltage divider effect in the 1T-1MTJ cell and is sufficient to trigger reliable dielectric breakdown of the oxide tunnel barrier, effectively shorting the device. In this paper we demonstrate the seamless integration of an OTP based on STT-MRAM and 100% programming and reading yield at the Mbit level.

The recent rise of mobile applications such as Internet of Things (IoT), wearable electronics, and context aware computing has renewed the search for a universal embedded memory technology [1]. Such a technology should combine fast read/write, low voltage operation, low power consumption, non-volatility, infinite endurance, with CMOS process compatibility. Magnetic Random Access Memory based on Spin Transfer Torque phenomena (STT-MRAM) has been recognized as a promising candidate. The technology is innately non-volatile, and it has been shown that STT-MRAM based on perpendicularly magnetized Magnetic Tunnel Junctions (MTJs) can be written at high speed with low power. However, two major challenges remain. The first is to design multilayered MTJs that can withstand temperatures used in CMOS backend processing without any degradation of their magnetic properties. The second challenge is that fast read/write must be achieved not only at the single device level, but on entire memory arrays which requires controlling defects and distributions of magnetic properties.

We present major breakthroughs in MTJ design for STT-MRAM applications allowing reliable write for pulse lengths down to 1.5ns, data retention up to 125°C for 10 years and full compatibility with BEOL process up to 400°C for 1 hour. We have successfully integrated the novel structure onto an 8Mbit test chip. We demonstrate writing of every single cell in the array using sub-5ns pulses over a wide temperature range without using any error correction. We also show that sensing times of 4ns are sufficient to read every data cell. The inherent scalability of the design makes it a prime candidate for universal embedded non-volatile memories down to the 28nm node and beyond.

The low frequency dielectric response of aqueous solutions containing 0, 1, 5, and 10% w/v polyvinylpyrrolidone (PVP) was studied to characterize the low temperature relaxation behavior of these systems. Complementary modulated temperature differential scanning calorimetry (MTDSC) studies allowed measurement of the glass transition temperature for these materials, corresponding to the behavior of the nonfrozen phase. Dielectric investigations in the frequency range of 10 6 to 10 −2 Hz were performed on the systems in the liquid state, with a Maxwell–Wagner response noted for both the PVP solutions and water. The solid-phase responses were studied over a range of temperatures down to − 70°C, with a relaxation peak observed for the PVP systems in the kilohertz region. The spectra were modeled using the Havriliak–Negami equation and the corresponding relaxation times were calculated, with a satisfactory fit to the Arrhenius equation noted. The calculated activation energies were similar to literature values for the dielectric relaxation of water. It is suggested that the dielectric response is primarily a reflection of the relaxation behavior of the water molecules in the nonfrozen fraction, thereby indicating that the dielectric technique may yield insights into specific components of frozen aqueous systems. © 2001 Wiley-Liss, Inc. and the American Pharmaceutical Association J Pharm Sci 90:157–164, 2001

A series of ternary gel systems based on cetostearyl alcohol (CSA) and cetomacrogol 1000 or sodium lauryl sulfate have been studied using oscillatory rheology, differential interference contrast (DIC) microscopy, cryoscanning electron microscopy (cryo-SEM), and low-frequency dielectric analysis in order to elucidate the nature of the lamellar structures formed in relation to composition. The effects of altering the concentration of CSA (0.25% to 8% w/w) for 1% and 2% w/v cetomacrogol 1000 and 0.5% and 1% w/v sodium lauryl sulfate systems have been investigated, with marked increases in the storage and loss moduli seen on increasing the concentration of CSA for both surfactants. DIC microscopy indicated that at low CSA concentrations, needlelike structures were seen which, on increasing the concentration, were observed to congregate into nuclei. At concentrations of 4% CSA and above, neospherical structures were also observed. Cryo-SEM revealed that the needlelike objects were sheet structures ascribed to lamellar gel phases, while the nuclei were folded "rosettes" formed by those sheets, with the spherical structures being ascribed to cetostearyl alcohol. It was also noted that the lamellae were more tightly folded at 8% w/w CSA, which may be associated with the higher rheological moduli for these systems. Low-frequency dielectric analysis was performed over a frequency range of 10(4) Hz to 10(-2) Hz. A decrease in both the dielectric loss and capacitance was observed as the concentration of cetostearyl alcohol was increased. The dielectric data were described in terms of an equivalent circuit model based on a modified Maxwell-Wagner response. A good correlation was found between the fitted and experimental data and the effect of altering the gel composition on specific features of the equivalent circuit are discussed.

The influence of propantheline bromide incorporation on the phase structure of glyceryl monoolein/water systems has been investigated using low-frequency dielectric spectroscopy over a frequency range of 10(-2) to 10(6) Hz at 20 degrees C. The responses of glyceryl monoolein systems composed of 10% and 30% w/w were measured and the spectra modeled using an equivalent circuit based on the Maxwell-Wagner theory.1,2 Marked changes in the dielectric responses of the systems were noted on addition of the propantheline bromide at concentrations up to 10% w/w. For the lamellar (10% w/w water) glyceryl monoolein systems, an increase in the imaginary permitivity was seen, corresponding to an increase in conductivity due to the presence of additional ionic species within the system. Evidence was also obtained for the incorporation of the drug directly into the lipid bilayers, particularly at higher concentrations (10% drug) at which dielectric behavior corresponding to bilayer disruption was seen. Incorporation of 3% and 5% w/w drug into the cubic phase systems (30% w/w water) resulted in a change to the lamellar phase. However, circuit modeling indicated that the system formed structures which showed features of both the lamellar and cubic phases at 3% w/w drug loadings. The study has therefore demonstrated that dielectric analysis may provide a novel means of studying the effects of drug incorporation on the phase behavior of complex gel systems.

Thermotropic phase transitions of glyceryl monoolein–water systems have been investigated using dielectric spectroscopy over a frequency range of 10−2–106 Hz and a temperature range of 15–100°C, and also using differential interference contrast (DIC) microscopy fitted with a hot stage as a support technique. The frequency and temperature dependencies of the dielectric permittivity of systems undergoing transitions between lamellar, cubic, reverse hexagonal and L2 phases are reported. It was demonstrated that the frequency dependent response is highly sensitive to changes in phase and a model is described which allows the dielectric behaviour to be interpreted in terms of an equivalent circuit diagram, thereby allowing the response to be related to specific structural features within the sample. Similarly, it was demonstrated that the phase transition temperatures and ranges could be identified using the dielectric technique, yielding results which were in good agreement with those obtained using DIC microscopy for those systems whereby the phase changes are optically identifiable. The study therefore suggests that low frequency dielectric analysis is a potentially highly useful tool for the identification of thermotropic phase changes.

A series of glyceryl monoolein/water liquid crystal systems containing 15%, 20%, 30%, and 35% w/w water have been investigated using dielectric spectroscopy over a frequency range of 10-3−106 Hz and a temperature range of 20−90 °C in order to facilitate association of the lyotropic and thermotropic phase behavior with the dielectric response. The phase boundaries of the mixes were determined independently using hot stage microscopy. The frequency-dependent dielectric spectra of systems containing lamellar, cubic, and hexagonal phases are reported and have been modeled using circuits corresponding to generalized Maxwell−Wagner responses. More specifically, the systems were found to correspond to a parallel bulk capacitance and conductance in series with a Maxwell−Wagner blocking capacitance, which was associated with an adsorbed layer at the electrode surfaces. An additional dispersion was observed corresponding to a series RC circuit, which was associated with charge transport across the lipid bilayers. I...

Significant progresses have been made in recent years in perpendicular spin torque transfer magnetic random access memory (pSTT-MRAM) technology development by many companies or organizations. Commercialization of pSTT-MRAM is more real today than ever in the long history of MRAM technology development. We have recently reported fully functional pSTT-MRAM chips and macros with sub-5ns writing speed based on 90nm and 40nm node CMOS technologies [1,2]. These technologies can be potentially used to replace current embedded non-volatile memories such as embedded flash memories or SRAM and be applies to energy efficient applications such as internet of thing (IOT). In this presentation, we will review recent progresses and discuss STT-MRAM scaling challenges for product at 28nm technology node and beyond in terms of integration schemes as well as magnetic and electrical transport properties. We will also discuss the potential solutions that we see for these challenges. References: [1] G. Jan, Symp VLSI Tech, 2014. pp 50-51. [2] Yu Lu et al, IDEM Technical Digest, 2015 (in press)

Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5 kBT/μA, energy barriers higher than 100 kBT at room temperature for sub-40 nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 °C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology.

The objective of the study was to investigate the use of low frequency dielectric spectroscopy as a means of characterizing the thermal transitions of an amorphous drug substance, indometacin, with particular emphasis on modelling the response using the Dissado-Hill function. The low frequency dielectric behaviour of indometacin was measured over a temperature range of 10–160°C and a frequency range of 10−3-106 Hz. Modulated temperature differential scanning calorimetry (MTDSC) studies were also performed on equivalent samples, showing a glass transition, recrystallization and melting. Isothermal low frequency dielectric spectra of the sample at temperatures below recrystallization showed the dynamic dielectric relaxation associated with the amorphous phase, while changes in the real and imaginary permittivities were observed that were associated with recrystallization and subsequent melting. A small discontinuity was observed immediately above the recrystallization process in the MTDSC and dielectric data, suggested to correspond to a solid state transformation. The use of the Dissado-Hill function as a means of modelling the dielectric behaviour has also been described. The study suggests that low frequency dielectric spectroscopy, used in conjunction with MTDSC and Dissado-Hill modelling, maybe a useful tool for the characterization of amorphous and crystalline drugs.

A range of creams based on Aqueous Cream BP have been analyzed using low-frequency dielectric spectroscopy, with accompanying circuit modeling in combination with rheological and microscopic supportive techniques, to explore the use of the dielectric approach as a novel means of characterizing cream systems. Creams based on the formula for Aqueous Cream BP were produced by hand-mixing and mechanical mixing, with and without the inclusion of the preservative phenoxyethanol. Dielectric analysis was performed over a frequency range of 10(-2)-10(5) Hz. Cream samples were also examined using stress scan rheology and differential interference contrast microscopy. Dielectric analysis indicated that the presence of preservative decreased the capacitance and loss of the creams. The responses were modeled in terms of a dispersive capacitance in series with two RC circuits (series and parallel). Rheological studies indicated higher viscosities for the hand-mixed and unpreserved systems. Differential interference contrast microscopy showed marked differences in the distribution of the oil droplets, depending on the method of mixing. The study has demonstrated that dielectric spectroscopy, with accompanying circuit analysis, may be used as a means of modeling the structure of cream systems. The investigation has also shown that the formulation and preparation method of Aqueous Cream BP may have a profound effect on sample structure.