STT-MRAM for embedded memory applications from eNVM to last level cache

Authors :: Vignesh Sundar
Yang Yi
Yu-Jen Wang
Jian Zhu
Vinh Lam
Shen Dongna
Jesmin Haq
Guenole Jan
Tom Zhong
Po-Kang Wang
Son T. Le
Sahil Patel
Renren He
Huanlong Liu
Santiago Serrano-Guisan
Paul Liu
Yuan-Jen Lee
Jodi Iwata-Harms
Luc Thomas
Ru-Ying Tong
Teng Zhongjian
Source :: 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Publication Year :: 2017
Publisher :: IEEE, 2017.
Abstract: Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthroughs that have brought perpendicular STT-MRAM to the cusp of mass production.

Subjects :: 010302 applied physics
Magnetoresistive random-access memory
Random access memory
Hardware_MEMORYSTRUCTURES
Computer science
Working memory
Embedded memory
Ranging
02 engineering and technology
Parallel computing
021001 nanoscience & nanotechnology
01 natural sciences
Computer Science::Hardware Architecture
Hardware_GENERAL
0103 physical sciences
Cache
Data retention
0210 nano-technology

Database :: OpenAIRE
Journal :: 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Accession number :: edsair.doi...........3d01a4980cebeec2fdabeffea6d4b2a1
Full Text :: https://doi.org/10.1109/s3s.2017.8308734