425 results on '"Reggiani, S"'
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2. New DG FeFET topology with enhanced SS and non-hysteretic behavior
3. TFET inverter static and transient performances in presence of traps and localized strain
4. Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations
5. TCAD investigation on hot-electron injection in new-generation technologies
6. Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture
7. TCAD study of DLC coatings for large-area high-power diodes
8. Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide
9. A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs
10. Capacitance estimation for InAs Tunnel FETs by means of full-quantum [formula omitted] simulation
11. Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD = 0.4 V
12. Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback
13. Investigation on the electrical properties of superlattice FETs using a non-parabolic band model
14. The R-Σ Approach to Tunnelling in Nanoscale Devices
15. The Density-Gradient Correction as a Disguised Pilot Wave of de Broglie
16. Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model
17. Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs
18. Carrier Transport in Silicon Dioxide using the Spherical-Harmonics Expansion of the BTE
19. Density of States and Group Velocity Calculations for SiO2
20. Numerical investigation on the junctionless nanowire FET
21. Modeling Hole Surface- and Bulk-Mobility in the Frame of a Spherical-Harmonics Solution of the BTE
22. Steep-slope nanowire FET with a superlattice in the source extension
23. Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight
24. Modeling of gate-all-around charge trapping SONOS memory cells
25. Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement
26. A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
27. A low-field mobility model for bulk and ultrathin-body SOI p-MOSFETs with different surface and channel orientations
28. A low-field mobility model for bulk, ultrathin body SOI and double-gate n-MOSFETs with different surface and channel orientations-part II: ultrathin silicon films
29. A low-field mobility model for bulk, ultrathin body SOI and double-gate n-MOSFETs with different surface and channel orientations-part I: fundamental principles
30. Effective mobility in nanowire FETs under quasi-ballistic conditions
31. An investigation of performance limits of conventional and tunneling graphene-based transistors
32. Explanation of the rugged LDMOS behavior by means of numerical analysis
33. Semiclassical transport in silicon nanowire FETs including surface roughness
34. Impact-ionization coefficient in silicon at high fields— a parametric approach
35. Extension of the R-Σ method to any order
36. Beyond CMOS
37. On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
38. Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range
39. Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs
40. TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation
41. T05.01.21 NON-TUNNELLED EXPOSED EFTR: INITIAL EXPERIENCE
42. Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors
43. Band-structure calculations of SiO2 by means of Hatree-Fock and density-functional techniques
44. On the reversible threshold voltage shift in SiC Power MOSFETs
45. Carrier Transport in Silicon Dioxide using the Spherical-Harmonics Expansion of the BTE
46. OC. 12.4 PRIMARY SCLEROSING CHOLANGITIS ASSOCIATED WITH INFLAMMATORY BOWEL DISEASE: ANALYSIS OF INTESTINAL OUTCOME AFTER LIVER TRANSPLANTATION
47. Wide band gap Innovative SiC for Advanced Power (WInSiC4AP) a European project driving the future applications of SiC
48. TCAD predictions of hot-electron injection in p-type LDMOS transistors
49. Characterization and Modeling of BTI in SiC MOSFETs
50. New DG FeFET architecture with enhanced SS and non-hysteretic behaviour
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