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Explanation of the rugged LDMOS behavior by means of numerical analysis
- Source :
- IEEE Transactions on Electron Devices. Nov, 2009, Vol. 56 Issue 11, p2811, 8 p.
- Publication Year :
- 2009
- Subjects :
- Electrostatic interactions -- Analysis
Ionization -- Analysis
Metal oxide semiconductor field effect transistors -- Design and construction
Metal oxide semiconductor field effect transistors -- Electric properties
Numerical analysis -- Usage
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 56
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.211531652