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This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction. [ABSTRACT FROM AUTHOR]

[Display omitted] In this work, the nanocables of few-layered ReS 2 nanosheets sandwiched between carbon nanotubes (CNTs) and nitrogen-doped amorphous carbon (NC) coating (i.e., CNT@ReS 2 @NC) are synthesized as high-performance anodes of both potassium-ion batteries (PIBs) and sodium-ion batteries (SIBs). The CNT@ReS 2 @NC nanocables with dual carbon modifications have the several advantages for efficient K+/Na+ storage. The few-layered ReS 2 nanosheets with a wide interlayer spacing of 0.64 nm contribute to accelerated reaction kinetics for fast K+/Na+ intercalation/extraction. The carbon nanotube skeleton with a hollow interior can effectively relieve the volume change and serve as a robust conductive network to boost structural stability. The NC layer provides rich defects as active sites and suppresses the shuttle effect of polysulfides produced in discharge/charge processes. Consequently, the CNT@ReS 2 @NC nanocables possess outstanding electrochemical performance in both PIBs and SIBs owing to the synergistic effect from the different components. A long cycling lifespan of 3500 cycles with a maintained discharge capacity of 125 mAh/g is achieved for CNT@ReS 2 @NC at 1 A/g in PIBs. In SIBs, it can keep a high capacity of 202 mAh/g over 3000 cycles at 5 A/g. Moreover, the CNT@ReS 2 @NC||Na 3 V 2 (PO 4) 3 full cell can exhibit remarkable cycling performance, yielding a low capacity decay rate of 0.019 % per cycle over 1000 cycles at 2C. [ABSTRACT FROM AUTHOR]

Abstract This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

Machine learning is playing a crucial role in optimizing material synthesis, particularly in scenarios where several parameters related to growth exhibit different and significant outcomes. An example of such complexity is the growth of atomically thin semiconductors through chemical vapor deposition (CVD), where multiple parameters can influence the thermodynamics and reaction kinetics involved in the synthesis. Herein, we performed a set of orthogonal experiments, varying the key parameters such as temperature, carries gas flux and precursor position to identify the optimal conditions for maximizing covered area and the size of rhenium disulfide (ReS2) crystals. The experimental results were used to establish correlations among the three thermodynamic variables through an artificial neural network. Contour plots were then generated to visualize the impact on the coverage and flake size of the crystals. This study demonstrates the capability of machine learning to enhance the potential of CVD-growth for the integration of 2D semiconductors like ReS2 at larger scales. [ABSTRACT FROM AUTHOR]

In this study, through vacancy engineering and nanomorphology control, a sulfur vacancy-rich three-/two-dimensional (3D/2D) ReS2/CdIn2S4-SV heterojunction photocatalyst was rationally constructed to achieve efficient spatial separation of charge carriers. This plays a crucial role in developing high-performance photocatalysts for effectively transforming solar energy into chemical energy. The optimized ReS2/CdIn2S4-SV (RCIS-SV) composite material demonstrated a hydrogen production rate of 1.412 mmol·g-1·h-1, nearly 4.4 times that of CdIn2S4-SV (0.322 mmol·g-1·h-1) and approximately 22.8 times that of CdIn2S4 (0.062 mmol·g-1·h-1). Scanning electron microscopy (SEM) tests confirmed that upon the addition of octadecyltrimethylammonium bromide (OTAB) ligands, CdIn2S4 successfully transitioned from a three-dimensional to a two-dimensional structure, thereby enhancing the feasibility for surface modification and functionalization. The strong interface charge carrier transfer efficiency within the 3D/2D ReS2/CdIn2S4-SV heterojunction photocatalyst, further enhanced by the synergistic effect of sulfur vacancies acting as electron traps and the incorporation of ReS2, significantly promotes the separation of photogenerated charges. By integrating 3D/2D heterostructures with sulfur vacancies, this study aims to offer valuable guidance for the rational design of efficient photocatalysts. [ABSTRACT FROM AUTHOR]

Rhenium disulfide (ReS2) is a type of transition metal dichalcogenides (TMDs) that has potential electronic and photoelectrical applications. However, limited research has been conducted on improving its electrical properties and understanding the effect of doping on ReS2‐based devices. In this study, the enhanced electrical and photoelectrical performance of a 2D/0D heterostructure constructed by decorating the In2O3 quantum dots (QDs) on a multilayer ReS2 field‐effect transistor (FET) is reported. The In2O3 QDs are characterized by using a transmission electron microscope, optical absorption, and photoluminescence spectroscopy. The n‐doping effects with improved mobility are clearly observed, which is attributed to the electron transfer induced by the relatively high conduction band level of In2O3 QDs. Owing to the channel migration of ReS2 and traps at the ReS2/In2O3 QDs interface, additional performance improvements are observed, including reduced contact resistance, improved subthreshold swing, and increased photoresponsivity; however, the photoresponse speed is decreased. In summary, the findings suggest a novel mixed‐dimensional heterostructure for enhancing the performance of ReS2 transistors and provide insights into doping‐induced channel migration for 2D materials. [ABSTRACT FROM AUTHOR]

Conventional research on linear polarization photodetector for 2D materials has focused on the search for different anisotropic materials, combinations between materials, introducing plasmonic structures, and patterning 2D materials to improve performance. However, these methods provide limited improvement in polarization sensitivity. Here, a balanced photodetector structure is proposed that does not require an additional process and relies only on the presence of anisotropy in the material itself to substantially improve the polarization sensitivity. The balanced photodetector consists of two ReS2 photodetectors, where the single ReS2 photodetector exhibits excellent performance at 650 nm illumination, including a responsivity and detectivity of 0.28 A W−1 and 4.22 × 109 Jones. Benefiting from the anisotropy of ReS2, the single photodetector achieves excellent polarization sensitivity of 2.79 at 650 nm. The balanced photodetector system achieves an excellent performance of ≈20 dB linear polarization extinction ratio and 0.003° Hz−1/2 noise equivalent light polarization difference at 100 kHz. These performances can also be further optimized by adjusting the gate voltage. The results provide a basis for further development of high‐performance polarization photodetector for 2D materials. [ABSTRACT FROM AUTHOR]

Abstract Rhenium disulfide (ReS2) is a type of transition metal dichalcogenides (TMDs) that has potential electronic and photoelectrical applications. However, limited research has been conducted on improving its electrical properties and understanding the effect of doping on ReS2‐based devices. In this study, the enhanced electrical and photoelectrical performance of a 2D/0D heterostructure constructed by decorating the In2O3 quantum dots (QDs) on a multilayer ReS2 field‐effect transistor (FET) is reported. The In2O3 QDs are characterized by using a transmission electron microscope, optical absorption, and photoluminescence spectroscopy. The n‐doping effects with improved mobility are clearly observed, which is attributed to the electron transfer induced by the relatively high conduction band level of In2O3 QDs. Owing to the channel migration of ReS2 and traps at the ReS2/In2O3 QDs interface, additional performance improvements are observed, including reduced contact resistance, improved subthreshold swing, and increased photoresponsivity; however, the photoresponse speed is decreased. In summary, the findings suggest a novel mixed‐dimensional heterostructure for enhancing the performance of ReS2 transistors and provide insights into doping‐induced channel migration for 2D materials.

Two-dimensional rhenium disulfide (ReS2), a member of the transition-metal dichalcogenide family, has received significant attention due to its potential applications in field-effect transistors (FETs), photodetectors, and memories. In this work, we investigate the suppression of the subthreshold current during the forward voltage gate sweep, leading to an inversion of the hysteresis in the transfer characteristics of ReS2 nanosheet-based FETs from clockwise to anticlockwise. We explore the impact of temperature, sweeping gate voltage, and pressure on this behavior. Notably, the suppression in current within the subthreshold region coincides with a peak in gate current, which increases beyond a specific temperature but remains unaffected by pressure. We attribute both the suppression in drain current and the presence of peak in gate current to the charge/discharge process of gate oxide traps by thermal-assisted tunnelling. The suppression of the subthreshold current at high temperatures not only reduces power consumption but also extends the operational temperature range of ReS2 nanosheet-based FETs. [ABSTRACT FROM AUTHOR]

Rhenium disulfide (ReS2) is promising to work as a robust host for sodium storage, owing to the extremely weak interlayer van der Waals interactions and large interlayer spacing. However, the low electronic conductivity and huge volume expansion seriously restrict high-rate capability and cycling lifespan. In this work, few-layered ReS2 nanosheets with carbon coating (ReS2/C) grown on the hollow mesoporous carbon spheres (HMCS) are designed to form the HMCS@ReS2/C architectures that have several merits for the sodium storage, attributed to the dual carbon modification and the hollow structure. (i) HMCS provides a large interior void to relieve the volume change during discharge/charge processes and superior structural stability for long-term cycling. (ii) The large hetero-interfacial contact can enhance electron/Na+ transport in ReS2, enabling accelerated reaction kinetics. (iii) The outer carbon layer formed on ReS2 surface is capable of inhibiting dissolution of polysulfide ions and their corrosion to the copper current collector, preventing the “under-voltage failure” phenomenon. Consequently, HMCS@ReS2/C delivers superior sodium storage performance, yielding excellent high-rate capability (211 mAh g−1 at 10 A g−1), long lifespan (4000 cycles at 10 A g−1) and stable cycling stability with an extremely low capacity decay rate of 0.0096% per cycle. The high-rate cyclability surpasses the record of ReS2-based anodes reported previously. Furthermore, the fabricated Na3V2(PO4)3║HMCS@ReS2/C full cells can also exhibit outstanding cycling performance.

In recent years, two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have received significant attention due to their exceptional electrical and optical properties. Among these 2D materials, ReS2 distinguishes itself through its unique optical and conductance anisotropy. Despite concerted efforts to produce high-quality ReS2, the unique interlayer decoupling properties pose substantial challenges in growing large-area ReS2 thin films, with the preparation of single layers proving even more complex. In this work, large-scale continuous monolayer and bilayer ReS2 films were successfully grown on mica substrates using low-pressure chemical vapor deposition (LPCVD). Photodetectors were fabricated using the prepared high-quality ReS2 films, and the devices presented stable photoresponse and enhanced response sensitivity. The production of continuous ReS2 atomic layers heralds promising prospects for large-scale integrated circuits and advances the practical application of optoelectronics based on 2D layered materials. [ABSTRACT FROM AUTHOR]

Abstract Broadband photodetectors based on 2D layered materials provide great potential applications in night vision, sensing, and communications. However, it remains a challenge for detectors to achieve both high photoresponsivity and fast response. Here, a high‐sensitive photodetector based on ReS2/BP van der Waals (vdW) heterodiode with fast speed, rising time (τr) of 770 ns, and decay time (τd) of 760 ns under a 637 nm laser is reported. The detection range is covered from visible to mid‐wave infrared (MWIR) 0.405–3.753 μm. In the visible range, a high photoresponsivity of 107.1 AW−1, competitive specific detectivity (D*) of 1.89 × 1010 cm Hz1/2 W−1, and a low noise equivalent power of 3.03 × 10−14 W Hz−1/2 are obtained. In the MWIR the D* of 3.26 × 108 cm Hz1/2 W−1 is demonstrated in the photovoltaic model. Notably, the photodiode realizes a high external quantum efficiency of 71.8%, and a high power conversion efficiency of 2.0%. This work provides a way to design broadband response and fast‐speed self‐driven photodetectors with great potential applications in weak light intensity.

Polymer-assisted deposition (PAD) has been widely used in the preparation of high-quality oxides and sulfides for basic research and applications. Specifically, diverse PAD-prepared magnetic material thin films such as ZnO, Ga2O3, SrRuO3, LaCoO3, LaMnO3, Y3Fe5O12, MoS2, MoSe2, and ReS2 thin films have been grown, in which thickness-dependent, strain-modulated, doping-mediated, and/or morphology-dependent room-temperature ferromagnetism (RTFM) have been explored. Inspired by the discovery of intrinsic low-temperature FM in two-dimensional (2D) systems prepared using mechanical exfoliation, the search for more convenient methods to prepare 2D ferromagnetic materials with high-temperature FM has seen explosive growth, but with little success. Fortunately, the very recent synthesis of 2D NiO by PAD has shed light on this challenge. Based on these abovementioned developments, the difficulties of PAD when preparing a-few-nanometer single-crystalline materials and the opportunities in PAD for novel materials such as chiral magnetic soliton material Cr1/3NbS2 are discussed. [ABSTRACT FROM AUTHOR]

Porous silicon (PSi) improves the performance of commonly used silicon solar cells due to its large surface-to-volume ratio and high light absorption capability. PSi increases light absorption and power conversion efficiency (PCE) compared to traditional silicon solar cells. Due to the unique optical properties of transition metal dichalcogenides (TMDCs), device performance improves when a TMDC layer is added to PSi-based photonic devices. However, only three studies in the literature have investigated TMDC/PSi structures so far. In this study, a Gr/ReS2/PSi/p-cSi solar cell structure is discussed. In the proposed structure, Gr, ReS2 and PSi are used as transparent conductive electrode, interlayer and absorber, respectively. The effects of thicknesses, NC and NV, and doping concentrations of the graphene, ReS2 and PSi layers are examined and the layers are optimized. JSC, VOC, FF and PCE values of the optimized device are calculated as 32.83 mA/cm2, 0.88 V, 80.72% and 23.35%, respectively. In addition, 84.5% external quantum efficiency (EQE) at 550 nm and 0.467 A/W R at 790 nm are obtained. The proposed device demonstrates higher efficiency and VOC and FF values than the studies in the literature are obtained with the proposed structure. In addition, the reflectance of PSi and ReS2/PSi layers on a silicon (Si) substrate are calculated, and it is observed that these layers decrease reflectance due to their small refractive index. To the best of our knowledge, there is no study in the literature using ReS2 as an interlayer material. It is expected that the obtained results will be of benefit for future experimental and theoretical solar cell studies containing ReS2 layers. [ABSTRACT FROM AUTHOR]

Using density functional theory, the effect of biaxial tensile strain on adsorption of S in ReS2 monolayer is calculated. The study finds intrinsic ReS2 system and monolayer ReS2 adsorbed S system are affected by tensile deformation. Intrinsic ReS2 has direct band gap. As S appears, the system becomes indirect band gap. With tensile deformation amount of the intrinsic ReS2 system reaching 10%, the band gap reduces to 0.064eV. The growth rate of reflection and absorption coefficient are decreased by tensile deformation. The maximum reflection and absorption peak undergo red shift, improving the light reflection and absorption ability of adsorption system. [ABSTRACT FROM AUTHOR]

Few‐layer transition metal dichalcogenides (TMDs) and their combination as van der Waals heterostructures provide a promising platform for high‐performance optoelectronic devices. However, the ultrathin thickness of TMD flakes limits efficient light trapping and absorption, which triggers the hybrid construction with optical resonant cavities for enhanced light absorption. The optical structure enriched photodetectors can also be wavelength‐ and polarization‐sensitive but require complicated fabrication. Herein, a new‐type TMD‐based photodetector embedded with nanoslits is proposed to enhance light trapping. Taking ReS2 as an example, strong anisotropic Mie‐type optical responses arising from the intrinsic in‐plane anisotropy and nanoslit‐enhanced anisotropy are discovered. Owing to the nanoslit‐enhanced optical resonances and band engineering, excellent photodetection performances are demonstrated with high responsivity of 27 A W−1 and short rise/decay times of 3.7/3.7 ms. More importantly, through controlling the angle between the nanoslit orientation and the polarization direction to excite different resonant modes, polarization‐sensitive photodetectors with anisotropy ratios from 5.9 to 12.6 can be achieved, representing one of the most polarization‐sensitive TMD‐based photodetectors. The depth and orientation of nanoslits are demonstrated crucial for optimizing the anisotropy ratio. The findings bring an effective scheme to construct high‐performance and polarization‐sensitive photodetectors. [ABSTRACT FROM AUTHOR]

ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years. This review focuses on the preparation methods, encompassing hydrothermal, chemical vapor deposition, and exfoliation techniques, as well as achievements in correlated applications of ReS2-based heterostructures, including type-I, type-II heterostructures, and Z-scheme heterostructures for hydrogen evolution, reduction of CO2, and degradation of pollutants. We believe that this review provides an overview of the most recent advances to guide further research and development of ReS2-based heterostructures for photocatalysis. [ABSTRACT FROM AUTHOR]

Abstract Few‐layer transition metal dichalcogenides (TMDs) and their combination as van der Waals heterostructures provide a promising platform for high‐performance optoelectronic devices. However, the ultrathin thickness of TMD flakes limits efficient light trapping and absorption, which triggers the hybrid construction with optical resonant cavities for enhanced light absorption. The optical structure enriched photodetectors can also be wavelength‐ and polarization‐sensitive but require complicated fabrication. Herein, a new‐type TMD‐based photodetector embedded with nanoslits is proposed to enhance light trapping. Taking ReS2 as an example, strong anisotropic Mie‐type optical responses arising from the intrinsic in‐plane anisotropy and nanoslit‐enhanced anisotropy are discovered. Owing to the nanoslit‐enhanced optical resonances and band engineering, excellent photodetection performances are demonstrated with high responsivity of 27 A W−1 and short rise/decay times of 3.7/3.7 ms. More importantly, through controlling the angle between the nanoslit orientation and the polarization direction to excite different resonant modes, polarization‐sensitive photodetectors with anisotropy ratios from 5.9 to 12.6 can be achieved, representing one of the most polarization‐sensitive TMD‐based photodetectors. The depth and orientation of nanoslits are demonstrated crucial for optimizing the anisotropy ratio. The findings bring an effective scheme to construct high‐performance and polarization‐sensitive photodetectors.

We propose a new concept to excite the electrochemical reaction kinetics of heterostructures by constructing a dual electric field. A new ReS 2 /Nb 2 O 5 heterostructure of rhenium disulfide coupled to niobium oxide with a mutually compatible band structure and enriched oxygen vacancies was constructed. The unique heterostructure can facilitate the redistribution of charges to induce built-in electric fields and micro-localized electric fields, which endows it with excellent lithium-ion storage performance. [Display omitted] • A new concept for constructing the dual electric field effect based on heterostructure to excite lithium ion storage electrochemical activity is proposed. • ReS 2 /Nb 2 O 5 heterostructure electrode exhibits excellent capacity and ultra-long period stability in lithium ion storage. • The phase transition process of ReS 2 /Nb 2 O 5 heterostructure during the electrochemical reaction was revealed. Heterostructures with the electric field effect can excite the charge transfer kinetics of materials due to the driving force of the electric field. Herein, we report a new ReS 2 /Nb 2 O 5 heterostructure of rhenium disulfide coupled to niobium oxide with a mutually compatible band structure and enriched oxygen vacancies. The unique heterostructure can facilitate the redistribution of charges to induce built-in electric fields and microlocalized electric fields. As expected, the ReS 2 /Nb 2 O 5 heterostructure shows a superior lithium-ion reversible capacity of 805 mAh g−1 after 2400 h at 0.10 A g−1, and 414 mAh g−1 at 2.00 A g−1. In addition, in situ X-ray diffraction and ex situ X-ray photoelectron spectroscopy analysis reveal the phase transition process of the ReS 2 /Nb 2 O 5 heterostructure during the electrochemical reaction. This provides deeper insights into the construction of high-performance lithium-ion storage materials based on heterostructures with dual-electric field-driven charge transfer. [ABSTRACT FROM AUTHOR]

[Display omitted] • ReO 2 /ReS 2 community enhances the photothermal properties of 3D ReO 2 /ReS 2 /Zn 2 In 2 S 5 nanoflower. • ReO 2 /ReS 2 acts as an electron transport step to promote the H 2 production. • The photocatalytic hydrogen production ability of 3D ReO 2 /ReS 2 /Zn 2 In 2 S 5 nanoflowers is significantly improved. • DFT combined with ESR results prove the single electron transmission channel mechanism of the composites. Converting solar energy into hydrogen production is a promising strategy to alleviate the energy crisis. In this study, we developed a system for the study of photocatalytic hydrogen production performance by coupling ReO 2 /ReS 2 community and 3D Zn 2 In 2 S 5 nanoflowers. The combination of experimental results and Density functional theory (DFT) calculations show that ReO 2 /ReS 2 not only endows the composites with photothermal properties, but also acts as a step for electron transport, enabling accelerated photocatalytic charge separation and transfer. Among them, 0.75-ReO 2 /ReS 2 /Zn 2 In 2 S 5 (up to 6.75 mmol•g−1•h−1) can achieve the highest hydrogen production with Triethanolamine (TEOA) as substrate, which is 23.28 times higher than that of pure Zn 2 In 2 S 5 (0.29 mmol•g−1•h−1). In addition, 0.75-ReO 2 /ReS 2 /Zn 2 In 2 S 5 also exhibited certain hydrogen production performance when some representative biomasses (lactic acid, glycerol, glucose, and xylose) were used as substrates. This work provides a feasible strategy for the design of new photothermal hydrogen production photocatalysts. [ABSTRACT FROM AUTHOR]

Advanced Integrated Circuit technology demands high-performance channel materials and innovative device architectures to sustain the scaling of field-effect transistors. In this study, we simulate the electrical performance of rhenium disulfide and tungsten diselenide nanosheet FETs (NSFETs) with gate lengths ranging from 12 nm to 8 nm using Technology Computer-Aided Design method. The simulated high performance including 393 μA/μm on-state current and over 105 on/off ratio can meet the criteria for integrated circuit applications in the 1 nm technology node. Complementary FET (CFET) simulations are conducted through the vertical stacking of ReS 2 and WSe 2 NSFETs, exhibiting a small parasitic capacitance of 1.0 fF/μm, and notable noise margin (>235 mV) at different process corners. The construction and performance simulation of Static Random-Access Memory (SRAM) is realized through CFET interconnection, involving the calculation of read current and read/write noise margin. This research offers a forward-looking analysis of performance metrics for future 2D materials-based NSFETs, CFETs, and SRAMs. This study focuses on TCAD simulation of the electrical properties of Complementary Field-effected transistors (CFET) based on 2D rhenium disulfide (ReS 2) and tungsten diselenide (WSe 2) Nanosheet Field-effected transistors (NSFETs) with gate length (L G) scaling to 12 nm and below. With the excellent electrostatic control capability, ballistic transport mechanism, and absorption of the potential barrier reduction induced by quantum effects in the extension region, 2D ReS 2 and WSe 2 NSFETs with a channel thickness of 3 nm and an L G of 8 nm exhibit an on-state current (I ON) of 393 μA/μm and 183 μA/μm, respectively, and an on/off ratio exceeding 105 at 0.6 V supply voltage (V DD). Notably, even at the worst process corner, CFETs based on these 2D ReS 2 and WSe 2 NSFETs provide a maximum gain of 21.7 and a noise margin of 235 mV, approximately 0.39 V DD , which meets the performance standards necessary for integrated logic circuits. [Display omitted] • The performance of 2D ReS 2 and WSe 2 nanosheet transistors with 8 nm gate length are simulated by TCAD method. • The 2D ReS 2 and WSe 2 nanosheet transistors show on-state currents of 393 μA/μm and 183 μA/μm at 0.6 V supply voltage. • The CFET theoretically achieves a maximum gain of 21.7 and a robust noise margin of 235 mV at 0.6 V supply voltage. [ABSTRACT FROM AUTHOR]

In recent years, two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have received significant attention due to their exceptional electrical and optical properties. Among these 2D materials, ReS2 distinguishes itself through its unique optical and conductance anisotropy. Despite concerted efforts to produce high-quality ReS2, the unique interlayer decoupling properties pose substantial challenges in growing large-area ReS2 thin films, with the preparation of single layers proving even more complex. In this work, large-scale continuous monolayer and bilayer ReS2 films were successfully grown on mica substrates using low-pressure chemical vapor deposition (LPCVD). Photodetectors were fabricated using the prepared high-quality ReS2 films, and the devices presented stable photoresponse and enhanced response sensitivity. The production of continuous ReS2 atomic layers heralds promising prospects for large-scale integrated circuits and advances the practical application of optoelectronics based on 2D layered materials.

Flexible fiber‐shaped sodium dual‐ion batteries (FSDIBS) as a proof of concept are fabricated by using the hierarchical ReS2 nanosheets anchored on the carbon nanotube (ReS2@CNT) fiber as anode and graphite on the CNT as cathode. Owing to large interlayer spacing and weak layer coupling force of the ReS2 nanosheets and the anion accommodation of the graphite combined with good flexibility of the CNT fiber, the FSDIBS demonstrate outstanding electrochemical performances with high working voltage and high specific volumetric energy density, durable cycling life, and good flexibility. The FSDIBS show a specific discharge capacity of 97.8 mAh cm−3 at a current density of 630 mA cm−3 and high specific energy density of 25.12 mWh cm−3 (based on the whole volume of the two electrodes) and superb stability with a capacity retention of 91.8% even after bending for 2100 cycles. Moreover, a series of ex situ/in situ characterizations are verified that the reversible shuttles of the Na+ cations and PF6‐ anions between the anode and cathode are simultaneously occurred during the charge/discharge process. [ABSTRACT FROM AUTHOR]

Machine learning is playing a crucial role in optimizing material synthesis, particularly in scenarios where several parameters related to growth exhibit different and significant outcomes. An example of such complexity is the growth of atomically thin semiconductors through chemical vapor deposition (CVD), where multiple parameters can influence the thermodynamics and reaction kinetics involved in the synthesis. Herein, we performed a set of orthogonal experiments, varying the key parameters such as temperature, carries gas flux and precursor position to identify the optimal conditions for maximizing covered area and the size of rhenium disulfide (ReS 2 ) crystals. The experimental results were used to establish correlations among the three thermodynamic variables through an artificial neural network. Contour plots were then generated to visualize the impact on the coverage and flake size of the crystals. This study demonstrates the capability of machine learning to enhance the potential of CVD-growth for the integration of 2D semiconductors like ReS 2 at larger scales., (Creative Commons Attribution license.)

Continuous monitoring of ammonia (NH 3 ) in humid environments poses a notable challenge for gas sensing applications because of its effect on sensor sensitivity. The present work investigates the detection of NH 3 in a natural humid environment utilizing ReS 2 /Ti 3 C 2 T x heterostructures as a sensing platform. ReS 2 nanosheets were vertically grown on the surface of Ti 3 C 2 T x sheets through a hydrothermal synthetic approach, resulting in the formation of ReS 2 /Ti 3 C 2 T x heterostructures. The structural, morphological, and optical properties of ReS 2 /Ti 3 C 2 T x were investigated using various state-of-the-art techniques, including scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, zeta potential, Brunauer-Emmett-Teller technique, and Raman spectroscopy. The heterostructures exhibited 1.3- and 8-fold increases in specific surface area compared with ReS 2 and Ti 3 C 2 T x , respectively, potentially enhancing the active gas adsorption sites. The electrical investigations of the ReS 2 /Ti 3 C 2 T x -based sensor demonstrated enhanced selectivity and superior sensing response ranging from 7.8 to 12.4% toward 10 ppm of NH 3 within a relative humidity range of 15-85% at room temperature. These findings highlight the synergistic effect of ReS 2 and Ti 3 C 2 T x , offering valuable insights for NH 3 sensing in environments with high humidity, and are explained in the gas sensing mechanism.

Polymer-assisted deposition (PAD) has been widely used in the preparation of high-quality oxides and sulfides for basic research and applications. Specifically, diverse PAD-prepared magnetic material thin films such as ZnO, Ga2O3, SrRuO3, LaCoO3, LaMnO3, Y3Fe5O12, MoS2, MoSe2, and ReS2 thin films have been grown, in which thickness-dependent, strain-modulated, doping-mediated, and/or morphology-dependent room-temperature ferromagnetism (RTFM) have been explored. Inspired by the discovery of intrinsic low-temperature FM in two-dimensional (2D) systems prepared using mechanical exfoliation, the search for more convenient methods to prepare 2D ferromagnetic materials with high-temperature FM has seen explosive growth, but with little success. Fortunately, the very recent synthesis of 2D NiO by PAD has shed light on this challenge. Based on these abovementioned developments, the difficulties of PAD when preparing a-few-nanometer single-crystalline materials and the opportunities in PAD for novel materials such as chiral magnetic soliton material Cr1/3NbS2 are discussed.

Ferroelectric field-effect transistors (FeFET) with nondestructive readout capability have emerged as an attractive candidate for next-generation nonvolatile memory technology. Herein, we demonstrate ferroelectric-gated nonvolatile memory featuring a top gate architecture by combining multi-layer ReS2 with ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films. The ReS2 FeFET using hBN as substrate shows a large memory window of ∼ 30 V. Repeated write/erase operations are successfully performed by applying pulse voltage of ±25 V with 1 ms width to the ferroelectric P(VDF-TrFE), and an ultra-high write/erase ratio of ∼ 107 can be achieved. Furthermore, the ReS2 FeFET shows stable data retention capability of longer than 2,000 s and reliable endurance of greater than 2,000 cycles. These characteristics highlight that such ferroelectric-gated nonvolatile memory has great potential in future non-volatile memory applications. [ABSTRACT FROM AUTHOR]

Presented is an electrochemical study on a relatively new member of TMDC: ReS2. A systematic study has been done wherein pure ReS2′s viability, as a component in both faradaic and capacitive storage devices, has been found to be superior to the oft-cited conventional TMDC: MoS2. When evaluated as anode for Li-ion batteries, ReS2 showed higher storage capacity as well as better cycling stability. For supercapacitor applications, bulk ReS2 electrode was found to hold two times higher charge than bulk MoS2. Post exfoliation, ReS2 values were augmented by ca. 630% compared to unexfoliated samples. Detailed analysis revealed that several structural variations between ReS2 and MoS2 lead to the superior performance observed. In ReS2, there exists a weaker interlayer coupling, an intrinsic structural anisotropy due to presence of Re-Re interaction, and improved conductivity is prevalent due to interaction between Re chains that cumulatively improve electrochemical performance of ReS2. These attributes provide for robustness of ReS2 under prolonged electrochemical activity and this provides impetus for its use as a more viable alternative for a successful energy storage material.

In the present work, impact of various mechanical strains on the optoelectronic properties of monolayer ReS 2 (m -ReS 2) are investigated by using density functional theory. The bandgap of monolayer is determined to be 1.44 eV and 1.31 eV when computed using PBE and PBE + SOC methods. The monolayer displays outstanding electronic and optical tunability under biaxial compressive and shear strains. Under strain variations of 0 %–8 %, the bandgap for biaxial compression varies from 1.44 eV (1.31 eV) to 0.54 eV (0 eV), whereas for shear xx-yy strains, it varies from 1.44 eV (1.31 eV) to 0.34 eV (0.28 eV) when calculated using PBE (PBE + SOC) methods. A semiconductor-to-metal transition is observed for higher values of biaxial compressive strain. A pronounced impact of strain on the optical characteristics is likewise observed. We noticed that the absorption edge of monolayer ReS 2 shifts from 1.32 eV to 0.50 eV with a 0 %–8 % increase in biaxial compression, leading to an 11 % red shift in wavelength per 1 % strain change. Moreover, high optical absorption (5 × 105 cm−1), lying from infrared to UV region is observed. The present study points out that strain engineering can be an efficient tool for modifying both the electronic and optical properties of m -ReS 2 and may open new avenues for using this material in future optoelectronic applications. • Present study investigates impact of compressive, tensile, and shear strains on the optoelectronic properties of m -ReS 2. • The bandgap of m -ReS 2 decreases with increase in strain, with most prominent effect observed under biaxial compression. • The high n(ω) value suggests good performance in the advanced display devices. • In nutshell, our study reveals the effectiveness of strain engineering in modulating optoelectronic properties of m -ReS 2. [ABSTRACT FROM AUTHOR]

[Display omitted] • Layered RePS electrocatalysts were successfully fabricated by a simple method. • Layered structure provides ample electron transfer channels. • The formed heterostructure can greatly enhance the catalytic stability during HER process. • The optimized RePS catalysts show small overpotential of 57 mV at 10 mA cm−2 for HER in acidic media. Construction of electrocatalysts with exceptional intrinsic activity and rich active sites has proved to be an effective strategy for remarkably enhancing the activity of the hydrogen evolution reaction (HER). In this work, durable and highly efficient layered Re 2 P/ReS 2 (RePS) heterostructures were successfully fabricated by an in-situ phosphating layered ReS 2. Taking advantage of the unique layered structure can provide abundant reaction active sites and the strong electronic interaction between ReS 2 and Re 2 P can enhance the intrinsic activity, the optimized RePS electrocatalysts show superior catalytic activities of 69 and 57 mV at 10 mA cm−2 for HER in alkaline and acidic media, respectively. The density functional theory results suggest that the formed heterostructures between ReS 2 and Re 2 P play an important role in optimizing the catalytic kinetics of the electrocatalysts. This work not only demonstrates that modulation of the electronic structure of catalysts is an efficient way to improve the HER activity but also confirms that the layered RePS heterostructure is a promising candidate for robust and high performance HER catalysts. [ABSTRACT FROM AUTHOR]

ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years. This review focuses on the preparation methods, encompassing hydrothermal, chemical vapor deposition, and exfoliation techniques, as well as achievements in correlated applications of ReS2-based heterostructures, including type-I, type-II heterostructures, and Z-scheme heterostructures for hydrogen evolution, reduction of CO2, and degradation of pollutants. We believe that this review provides an overview of the most recent advances to guide further research and development of ReS2-based heterostructures for photocatalysis.

Based on the first-principles calculations, the electronic structure and optical properties of the Mo-doped monolayer rhenium disulfide (ReS2) model are calculated, and the system stability, bond length, charge difference density, band structure, photoabsorption coefficient, system stability, and reflectivity are analyzed. The calculation results show that doping changes the structural stability of the system, which gradually decreases with an increasing concentration of doping. The calculation of band structure and density of states indicated that the band gap value of the system decreases continuously to 0 with increasing doping concentration, while the average charge population of atoms at doping sites keeps increasing with the better electron-losing ability of atoms. Compared with the intrinsic monolayer ReS2, the peak of systemic reflectivity at different doping concentrations has corresponding degrees of redshift in a certain wavelength range, as demonstrated by the optical properties. [ABSTRACT FROM AUTHOR]

Based on the first-principles calculations, the electronic structure and optical properties of the Mo-doped monolayer rhenium disulfide (ReS2) model are calculated, and the system stability, bond length, charge difference density, band structure, photoabsorption coefficient, system stability, and reflectivity are analyzed. The calculation results show that doping changes the structural stability of the system, which gradually decreases with an increasing concentration of doping. The calculation of band structure and density of states indicated that the band gap value of the system decreases continuously to 0 with increasing doping concentration, while the average charge population of atoms at doping sites keeps increasing with the better electron-losing ability of atoms. Compared with the intrinsic monolayer ReS2, the peak of systemic reflectivity at different doping concentrations has corresponding degrees of redshift in a certain wavelength range, as demonstrated by the optical properties. [ABSTRACT FROM AUTHOR]

Surface charge transfer doping has been widely utilized to tune the electronic and optical properties of semiconductor photodetectors based on low-dimensional materials. Although many studies have been conducted on the performance (response time, responsivity, etc.) of doped photodetectors and their mechanisms, they merely examined a specific thickness and did not systematically explore the dependence of doping effects on the number of layers. This work performs a series of investigations on ReS2 photodetectors with different numbers of layers and demonstrates that the p-dopant tetrafluorotetracyanoquinodimethane (F4-TCNQ) converts the deep trap states into recombination centers for few-layer ReS2 and induces a vertical p-n junction for thicker ReS2. A response time of 200 ms is observed in the decorated 2-layer ReS2 photodetector, more than two orders of magnitude faster than the response of the pristine photodetector, due to the disappearance of deep trap states. A current rectification ratio of 30 in the F4-TCNQ-decorated sandwiched ReS2 device demonstrates the formation of a vertical p-n junction in a thicker ReS2 device. The responsivity is as high as 2,000 A/W owing to the strong carrier separation of the p-n junction. Different thicknesses of ReS2 enable switching of the prominent operating mechanism between transforming deep trap states into recombination centers and forming a vertical p-n junction. The thickness-dependent doping effect of a two-dimensional material serves as a new mechanism and provides a scheme toward improving the performance of other semiconductor devices, especially optical and electronic devices based on low-dimensional materials. [ABSTRACT FROM AUTHOR]

Abstract MoS2 and ReS2 are typical transition metal chalcogenides with many excellent electrical and optical properties. Due to different lattice symmetries, ReS2 offers one more dimension than MoS2 to tune its physical properties. In this paper, we studied the polarized reflection spectra in single-layer MoS2 and ReS2. The explicit difference identifies strong angle-dependent properties in single-layer ReS2 distinct from single-layer MoS2. The results of samples on both SiO2/Si substrate and quartz substrate show single-layer ReS2 is in-plane anisotropic and the change period of reflection intensity is estimated with the polarization angles.

The exponential growth of data in the big data era has made it imperative to improve the data storage density and calculation speed. Therefore, the development of a multibit memory with an ultrafast operational speed is of great significance. In this work, a floating-gate (FG) memory based on the ReS 2 /h-BN/graphene van der Waals heterostructure is reported. The device exhibits ultrafast and multilevel nonvolatile memory characteristics, notably featuring an exceptionally large memory window of 113.36 V, a substantial erasing/programming current ratio of 10 7 , an ultrafast operational speed of 30 ns, outstanding endurance exceeding 1000 cycles, and retention performance exceeding 1100 s. Furthermore, the device exhibits both electrically and optically tunable multilevel nonvolatile memory behavior. By controlling the voltage and light pulse parameters, the device achieves an electrical memory state of 130 levels (>7 bits) and an optical memory state of 45 levels (>5 bits).

The impact of the interfacial hexagonal boron nitride (h‐BN) layer between the channel and ionic liquid (IL) on an IL‐gated 2D rhenium disulfide (ReS2) field‐effect transistor (FET) is investigated. Through electrical DC and low‐frequency noise (LFN) characterization, it is found that the interfacial h‐BN layer enhances mobility and reduces the noise level of the device due to suppressed traps and improved channel interface. These experimental findings suggest that the use of interfacial h‐BN layer in 2D FETs is a promising method for enhancing the device performance. [ABSTRACT FROM AUTHOR]

We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide (TFSI)-treated O-ReS2 field-effect transistors. Pristine ReS2 was compared with defect-mediated ReS2 to confirm whether the presence of defects on the interface enhances the interaction between O-ReS2 and TFSI molecules. Prior to the experiment, density functional theory (DFT) calculation was performed, and the result indicated that the charge transfer between TFSI and O-ReS2 is more sensitive to external electric fields than that between TFSI and pristine ReS2. After TFSI treatment, the drain current of O-ReS2 FET was significantly increased up to 1,113.4 times except in the range of −0.32−0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules, contrary to a significant degradation in device performance in pristine ReS2 FET. Moreover, in the treated O-ReS2 device, the dipole direction was highly influenced by the voltage sweep direction, generating a significant area of hysteresis in I–V and transfer characteristics, which was further verified by the surface potential result. Furthermore, the dipole state was enhanced according to the wavelength of the light source and photocurrent. These results indicate that TFSI-treated ReS2 FET has large potential for use as next-generation memristor, memory, and photodetector. [ABSTRACT FROM AUTHOR]

Rhenium disulfide (ReS2) single crystals are grown by chemical vapor transport technique. Powder X‐ray diffraction analysis of the single crystals shows them to possess ReS2 phase with triclinic unit cell structure. Energy dispersive analysis of X‐rays shows the crystals to be slightly rich in sulfur and deficient in rhenium. The optical bandgap obtained of the as‐grown single crystals is 1.35 eV. The surface morphology study done by scanning electron microscopy shows that the crystal surface to be flat with layer edges, such observation states that the growth mechanism of crystal have happened by mechanism of sheet spreading. The transmission and diffraction mode electron microscopy shows the single crystals to be layered and crystalline, respectively. The Raman peaks are well assigned to the ReS2. Thermogravimetric and differential thermogravimetric analysis shows the single crystals to disintegrate by two steps. The differential thermal analysis shows that the ReS2 possesses initial endothermic followed by exothermic nature for fast heating rates. In case of a slow heating rate of 10 K min−1, other than endothermic followed by exothermic, the end temperature range shows endothermic nature. The kinetic parameters determined by Kissinger relation shows the single‐crystal samples to disintegrate at a higher temperature range. [ABSTRACT FROM AUTHOR]

Artificial photosynthesis can provide valuable fuels and positively impact greenhouse effects, via transforming carbon dioxide (CO2) and water (H2O) into hydrocarbons using semiconductor‐based photocatalysts. However, the inefficient charge‐carrier dissociation and transportation as well as the lack of surface active sites are two major drawbacks to boosting their activity and selectivity in photocatalytic CO2 reduction. Recently, ReS2 has received tremendous attention in the photocatalysis area due to its intriguing physicochemical properties. Nevertheless, the application of ReS2 in photocatalytic CO2 reduction is scarcely covered. Herein, a heterojunction formed between ReS2 nanosheets and CdS nanoparticles is reported, achieving an apparently raised CO production of 7.1 μmol g−1 and high selectivity of 93.4%. The as‐prepared ReS2/CdS heterojunction exhibits strengthened visible‐light absorption, high‐efficiency electron–hole pair separation/transfer, and increased adsorption/activation/reduction of CO2 on in situ created sulfur vacancies of ReS2, thus all favoring CO2 photoreduction. These are corroborated by advanced characterization techniques, e.g., synchrotron‐based X‐ray absorption near‐edge structure, and density functional theory–based computations. The findings will be of broad interest in practical design and fabrication of surface active sites and semiconductor heterojunctions for applications in catalysis, electronics, and optoelectronics.

Artificial photosynthesis can provide valuable fuels and positively impact greenhouse effects, via transforming carbon dioxide (CO2) and water (H2O) into hydrocarbons using semiconductor‐based photocatalysts. However, the inefficient charge‐carrier dissociation and transportation as well as the lack of surface active sites are two major drawbacks to boosting their activity and selectivity in photocatalytic CO2 reduction. Recently, ReS2 has received tremendous attention in the photocatalysis area due to its intriguing physicochemical properties. Nevertheless, the application of ReS2 in photocatalytic CO2 reduction is scarcely covered. Herein, a heterojunction formed between ReS2 nanosheets and CdS nanoparticles is reported, achieving an apparently raised CO production of 7.1 μmol g−1 and high selectivity of 93.4%. The as‐prepared ReS2/CdS heterojunction exhibits strengthened visible‐light absorption, high‐efficiency electron–hole pair separation/transfer, and increased adsorption/activation/reduction of CO2 on in situ created sulfur vacancies of ReS2, thus all favoring CO2 photoreduction. These are corroborated by advanced characterization techniques, e.g., synchrotron‐based X‐ray absorption near‐edge structure, and density functional theory–based computations. The findings will be of broad interest in practical design and fabrication of surface active sites and semiconductor heterojunctions for applications in catalysis, electronics, and optoelectronics. [ABSTRACT FROM AUTHOR]