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27. Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications

Author

Beata S., Vincze A., Kovac J., Radziewicz D., Pucicki D., Serafinczuk J., Tlaczala M., and Kudrawiec R.

Abstract

The InGaAsN/GaAs heterostructures proposed in 1996 by Kondow et al. have been successfully used in telecom laser constructions on GaAs substrate. Additionally, the InGaAsN with a bandgap of 1 eV are lattice matched to both GaAs and Ge for the nitrogen and indium contents of around 3 % and 9 %, respectively. These features make this semiconductor an ideal candidate for high-efficiency multijunction solar cells (MJSCs) based on the Ge/InGaAsN/GaAs/InGaP structure. The growth technology of the GaAsN alloy-based diluted nitrides is very difficult because of the large miscibility gap between GaAs and GaN. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20971

Published
2011

33. MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As

Author

WROCLAW UNIV OF TECH (POLAND) FACULTY OF MICROSYSTEM ELECTRONICS AND PHOTONICS, Sciana, B., Radziewicz, D., Paszkiewicz, B., Tlaczala, M., Utko, M., WROCLAW UNIV OF TECH (POLAND) FACULTY OF MICROSYSTEM ELECTRONICS AND PHOTONICS, Sciana, B., Radziewicz, D., Paszkiewicz, B., Tlaczala, M., and Utko, M.

Abstract

This work presents the investigation of Metalorganic Vapor Phase Epitaxy (MOVPE) growth of silicon delta-doped Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (Al(x)Ga(1-x)As) epilayers and different methods used for their characterization. The influence of growth temperature, SiH(4) flow rate and Al(x)Ga(1-x)As composition on delta-doping characteristics is discussed. Properties of the Silicon (Si) delta-doped structures were examined using capacitance-voltage (C-V) measurements, photoreflectance spectroscopy, micro-photoluminescence, micro-Raman spectroscopy, and photocurrent spectroscopy. (5 figures, 9 refs.), Paper presented at the Workshop on MBE and VPE Growth, Physics, Technology (4th), held in Warsaw, Poland, on 24-28 Sept 2001. Pub. in THIN SOLID FILMS: An International Journal on the Science and Technology of Condensed Matter Films, v412 n1-2 p55-59, June 3, 2002. Prepared in collaboration with the Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland, and the Department of Microelectronics, Slovak University of Technology, Bratislava, Slovak Republic. This article is from ADA412911 THIN SOLID FILMS: An International Journal on the Science and Technology of Condensed Matter

Published
2002

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