144 results on '"Radziewicz D"'
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2. Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor
3. Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap
4. Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures
5. Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy
6. Reverse engineering of AlxGa1−xAs/GaAs structures composition by reflectance spectroscopy
7. Accurate carrier profiling of n-type GaAs junctions
8. Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy
9. Technology and characterisation of GaAsN/GaAs heterostructures for photodetector applications
10. Electronic states at misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
11. APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures
12. Functionally graded semiconductor layers for devices application
13. Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
14. Micro-Raman study of photoexcited plasma in GaAs bevelled structures
15. Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples
16. Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
17. Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and In xGa 1− xAs/GaAs strained quantum wells
18. InGaAs on GaAs Structures for Photodetector Applications
19. Critical Thickness Investigation of InxGa1-xAs/GaAs by X-Ray Measurements
20. MOVPE technology and characterisation of silicon δ-doped GaAs and Al xGa 1− xAs
21. Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy
22. Photoreflectance study of δ-doped semiconductor layers by a fast Fourier transformation
23. Defect distribution in InGaAsN/GaAs multilayer solar cells
24. Electrical Characterization of inGaAsN/GaAs Heterostructures
25. LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications
26. Determination of composition of non-homogeneous GaInNAs layers
27. Investigation of the epitaxial growth of AIIIBV-N heterostructures for solar cell applications
28. DLTS study of electrically active defects in triple quantum well InGaAsN/GaAs heterostructures
29. Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE
30. Deep levels in InGaAsN/GaAs and InGaAs/GaAs heterojunctions
31. Low temperature investigation of electrical and optical properties of InGaAsN/Gas QW Schottky barrier photodetectors
32. MOVPE growth of AIIIBV-N semiconductor compounds for photovoltaic applications
33. MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As
34. Dislocation‐related electronic states in partially strain‐relaxed InGaAs/GaAs heterostructures grown by MOVPE
35. Investigation of Si delta-doped InGaAs/GaAs QW MSM photodetectors
36. Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique
37. Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1−xAs/GaAs strained quantum wells
38. Micro-photoluminescence on bevelled samples - a method of assessing δ-doped layer
39. AP-MOVPE growth and characterization of GaAs1-xNx epilayers.
40. Dislocation in lattice-mismatched InGaAs/GaAs heterostructures as a factor of optoelectronic device degradation.
41. Investigations of MOVPE growth of zinc delta doped GaAs.
42. Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and Alx Ga1-xAs
43. Photoreflectance investigation of δ-doped MOVPE-grown AlxGa 1-x As layers
44. Application of GaN laterally overgrown on sapphire
45. Profiling of a GaAs structure using the probe method.
46. Photoreflectance investigation of δ-doped MOVPE-grown AlxGa1-xAs layers.
47. Investigation of the electrical properties of undoped gallium arsenide epitaxial layers.
48. MOVPE growth and characterisation of silicon δ-doped GaAs, AlAs and AlxGa1-xAs for advanced semiconductor devices.
49. Investigation of INGAAs/GAAs photodetectors with ALAs/GAAS nanolayers.
50. Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique
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