1. Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS.
- Author
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Knežević, Tihomir, Brodar, Tomislav, Radulović, Vladimir, Snoj, Luka, Makino, Takahiro, and Capan, Ivana
- Abstract
We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E
c â'0.4 eV and Ec â'0.7 eV. They were previously assigned to carbon interstitial (Ci ) labeled as EH1/3 and silicon-vacancy (VSi ) labeled as S1/2 , for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S1 defects. We show that EH1 consists of a single emission line arising from the Ci (h), while S1 has two emission lines arising from the VSi (h) and VSi (k) lattice sites. [ABSTRACT FROM AUTHOR]- Published
- 2022
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