Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS.

We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, E _c âˆ'0.4 eV and E _c âˆ'0.7 eV. They were previously assigned to carbon interstitial (C_i) labeled as EH_1/3 and silicon-vacancy (V _Si) labeled as S_1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH₁ and S₁ defects. We show that EH₁ consists of a single emission line arising from the C_i(h), while S₁ has two emission lines arising from the V _Si(h) and V _Si(k) lattice sites. [ABSTRACT FROM AUTHOR]