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1. Superconductivity, Electron Paramagnetic Resonance, and Raman Scattering Studies of Heterofullerides with Cs and Mg

2. Preparation and superconducting behavior of triammonium fulleride

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3. Synthesis and superconductivity of organometallic fullerides M(3−n)(NR4)(n)C60, where M = K, Rb; R = H, D, Me, Et, Bu; n = 1, 2, 3

4. Superconductivity of potassium and rubidium heterofullerides modified with low-melting alloys

5. Superconductivity in alkali-doped fullerides with wood’s metal and heterofullerides with two different alkali metals A(1)A(2)MC60

6. Thermoelectric properties, Shubnikov–de Haas effect and mobility of charge carriers in bismuth antimony tellurides and selenides and nanocomposite based on these materials

7. Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3

8. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

9. Superconductivity of Fullerides with Composition AGa $$_{x}$$ x C $$_{60}$$ 60 and AGa $$_{x}$$ x M $$_{y}$$ y C $$_{60}$$ 60 (A = K, Rb; M = In, Sn, Bi)

10. Superconductivity of heterofullerides with one or two atoms of the alkali metals and gallium, indium, bismuth or tin

11. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates

12. Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs inserts

13. Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures

14. Electron mobilities in isomorphic In0.53Ga0.47As quantum wells on InP substrates

15. Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As οn InP Substrate

16. Superconducting properties of new heterofullerides

17. Influence of Sn on the thermoelectric properties of (BixSb1−x)2Te3 single crystals

18. Structure and properties of solid solutions in the Mg-Al-B system

19. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density

20. Superconductivity and spectroscopy of homo- and heterofullerides of alkali metals and thallium

21. Superconductivity of Fullerides AnHgxC60(A = K,Rb,Cs; n = 2,3) Synthesized from Amalgams

22. Investigation of Paramagnetic Centers in Fullerides A2MC60 and AM2C60 (A = K, Rb, M = Mg, Be)

23. Study of the paramagnetic centers in heterofullerides MnM′3-nC60 (M = K, Rb, Cs; M′ = Be, Mg, Ca, Ba; n = 1, 2)

24. Superconductivity, Electron Paramagnetic Resonance, and Raman Scattering Studies of Heterofullerides with Cs and Mg

25. New metal-rich mixed chalcogenides with an intergrowth structure: Ni5.68SiSe2, Ni5.46GeSe2, and Ni5.42GeTe2

26. Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier

27. Transport and magnetic properties of Mn- and Mg-implanted GaAs layers

28. Transport and magnetotransport properties of Mn-doped InxGa1−xAs/GaAs quantum well structures

29. Persistent IR photoconductivity in InAs/GaAs structures with QD layers

30. 2D metal slabs in new nickel–tin chalcogenides Ni7−δSnQ2 (QSe, Te): average crystal and electronic structures, chemical bonding and physical properties

31. Fullerides: heterometallic superconductors with composition M2M′C60 (M = K, Rb; M′ = Yb, Lu, Sc)

32. Heterometallic fullerides of Fe and Cu groups with the composition K2MC60 (M=Fe+2, Fe+3, Co+2, Ni+2, Cu+1, Cu+2, Ag+1)

33. New insights into the plateau-insulator transition in the quantum Hall regime

34. PECULIARITIES OF ELECTRON TRANSPORT IN THE COUPLED <font>AlGaAs</font>/<font>GaAs</font> QUANTUM WELLS WITH THIN CENTRAL <font>AlAs</font> BARRIER

35. Persistent photoconductivity in quantum dot layers in InAs/GaAs structures

36. Lateral electronic transport in short period InAs/GaAs superlattices at the threshold of quantum dot formation

37. Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi1 xSbx)2Te3

38. Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

39. Electrical transport and persistent photoconductivity in quantum dot layers in InAs/GaAs structures

40. Wavelength dependent negative and positive persistent photoconductivity in Sn δ-doped GaAs structures

41. Negative persistent photoconductivity in GaAs (δ-Sn) structures

42. Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots

43. Transport and optical properties of tin-delta-doped GaAs structures

44. Influence of state hybridization on low-temperature electron transport in shallow quantum wells

45. Superconductivity and spectroscopy of heterofullerides Rb2MC60, K2MC60, and KM2C60 (M = Mg, Be)

46. Magnetotransport in GaAs δ-doped by Sn

47. Conducting wires embedded in an i-GaAs matrix for electronic applications

48. Low temperature transport properties of InAs/GaAs structures with quantum dots

49. Galvanomagnetic properties of Hg1−x MnxTe1−y Sey semimagnetic semiconductors

50. Quenching of persistent photoconductivity and decrease of electron concentration by high electric fields in GaAs delta-doped by Sn on vicinal substrate structures