Electron mobilities in isomorphic In0.53Ga0.47As quantum wells on InP substrates

The influence of the doping level, illumination, and width of isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on InP substrates on the electron mobility is studied. The persistent photoconductivity at low temperatures is found. Band diagrams are calculated and optimal parameters are found for obtaining the maximum electron mobility. The quantum and transport electron mobilities in dimensional quantization subbands are obtained from the Shubnikov-de Haas effect. The electron mobilities are calculated in dimensional quantization subbands upon scattering by ionized impurities taking intersubband transitions into account. Scattering by ionized impurities in samples studied is shown to be dominant at low temperatures.