21 results on '"Quemerais, Thomas"'
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2. Fully Integrated Interferometry-Based Reflectometer for High-Impedance Instrumentation
3. A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm
4. A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization
5. A D-band tuner for in-situ noise and power characterization in BiCMOS 55 nm
6. A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm
7. 1 – 20 GHz kΩ -range BiCMOS 55 nm Reflectometer
8. 1-20 GHz k Omega-range BiCMOS 55 nm Reflectometer
9. A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm
10. A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology
11. Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer
12. High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI
13. Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130–170 GHz Range
14. 1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer
15. On wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode
16. Analysis of process impact on local variability thanks to addressable transistors arrays
17. Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process
18. Design-in reliability approach for Hot Carrier injection modeling in the context of AMS/RF applications
19. Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier
20. 65-, 45-, and 32-nm Aluminium and Copper Transmission-Line Model at Millimeter-Wave Frequencies
21. High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI.
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