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1-20 GHz k Omega-range BiCMOS 55 nm Reflectometer

Authors :
Ferreira, Pietro M.
Donche, Cora
Haddadi, Kamel
Lasri, Tuami
Dambrine, Gilles
Gaquière, Christophe
Quemerais, Thomas
Gloria, Daniel
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1
Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)
Microtechnology and Instrumentation for Thermal and Electromagnetic Characterization - IEMN (MITEC - IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Advanced NanOmeter DEvices - IEMN (ANODE - IEMN)
Puissance - IEMN (PUISSANCE - IEMN)
STMicroelectronics [Crolles] (ST-CROLLES)
STMicroelectronics
Source :
12th IEEE International New Circuits and Systems Conference (IEEE NEWCAS), 12th IEEE International New Circuits and Systems Conference (IEEE NEWCAS), Jun 2014, Trois-Rivieres, Canada. pp.385-388
Publication Year :
2014
Publisher :
HAL CCSD, 2014.

Abstract

International audience; Scanning microwave microscope (SMM) combines the high spatial resolution with the high-sensitivity electric measurement capabilities of a vector network analyzer (VNA). SMM has been pointed out as very well suited for nanodevices characterization. In recent publications, SMM has demonstrated high performance while measuring kO-range impedances at low microwave frequency range (1-20 GHz). In spite of exceptional results, interferometry-based systems are so far hardly feasible as an integrated circuit due to physical constraints. In this work, an innovative design of integrated reflectometer based on BiCMOS 55 nm technology from STMicroelectronics is proposed. Electrical simulation results have proved a linear tuner calibration from 0.9 to 1.4 fF with an 8-bits precision (i.e. 2.0 aF). Reflectometer performance has been considered under influence of temperature variation from -55 to 125 degrees C and process variability. Such results demonstrate a slight influence of temperature variation and process variability in the reflectometer calibration which is negligible for SMM applications.

Details

Language :
French
Database :
OpenAIRE
Journal :
12th IEEE International New Circuits and Systems Conference (IEEE NEWCAS), 12th IEEE International New Circuits and Systems Conference (IEEE NEWCAS), Jun 2014, Trois-Rivieres, Canada. pp.385-388
Accession number :
edsair.dedup.wf.001..02c1ddae98261678997bc78cb0ad2e98