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21 results on '"Qin, Laixiang"'

1. Drive Current Boost in Double-Channeled Nanotube Gate all Around Field Effect Transistor

Author

Qin, Laixiang, Li, Chunlai, Wei, Yiqun, Xu, Zhangwei, He, Jin, He, Yandong, and Yue, Yutao

Subjects
Physics - Applied Physics
Abstract

We demonstrate an exotic doubled-channeled NT GAAFET (DC NT GAAFET) structure with Ion boost in comparison with NT GAAFET and NW GAAFET with the same footprint. Ion gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared with NT GAAFET and NW GAAFET. Ioff of DC NT GAAFET degrades by 61.8% than that of NT GAAFET, SS is almost comparable in two kinds of device structures, whereas Ion/Ioff ratio in DC NT GAAFET still gains subtly, by 2.4%, than NT GAAFET thanks to the substantial Ion aggrandizement, indicating the sustained superior gate electrostatic controllability in DC NT GAAFET with regarding to NT GAAFET regardless of additional channel incorporated. On the other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance than NW GAAFET in terms of high operation speed and better electrostatic controllability manifested by suppressed SCEs., Comment: 8 page, 4figures

Published
2023

2. Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

Author

Qin, Laixiang, Li, Chunlai, Xie, Ziang, Wei, Yiqun, and He, Jin

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into sub-10nm technology node. From 3nm technology node and beyond, gate all around field effect transistor steps onto the history stage attributed to its improved SCE suppressing ability thanks to surrounding gate structure. Herein, we demonstrate the super electrostatic control ability of a double-gated nanotube gate all around field effect transistor (DG NT GAAFET) in comparison with nanotube (NT GAAFET) and nanowire gate all around field effect transistor (NW GAAFET) with the same device parameters designed. Ion boosts of 62% and 57% have been obtained in DG NT GAAFET in comparison with those of NT GAAFET and NW GAAFET. Besides, substantially suppressed SCEs have been obtained in DG NT GAAFET due to enhanced electrostatic control, which are certificated by improved Ioff, SS, and Ion/Ioff ratio obtained. On the other hand, the Ion of NT GAAFET is comparable with that of NW GAA-FET. Whereas, its Ioff is 1 order smaller, and SS is almost 2 times smaller compared with those of NW GAA-FET, manifesting the meliority of nanotube channel structure. In the end, the robustness of nanotube channel structure, especially double gated one, against Lg scaling has been verified with TCAD simulation study., Comment: In order to suppress short channel effect and decrease power consumption of field effect transistor, double-gated nanotube FET has been comprehensively studied by TCAD simulation. Inspiring results have been obtained

Published
2023

7. Erratum: Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor

Author

Qin, Laixiang, Li, Chunlai, Wei, Yiqun, Xie, Ziang, He, Jin, Qin, Laixiang, Li, Chunlai, Wei, Yiqun, Xie, Ziang, and He, Jin

Abstract

Figure Presented. Figure 1 that depicts the 3D structures and y/x-cut profiles of the devices in the article [AIP Adv. 13, 065006, (2023)1] has some errors that need to be corrected, where (b) (3D structureof NW GAAFET) and (c) (3D structure of NT GAAFET); (h)(x-cut profile of NW GAAFet along the channel direction); and (i)(x-cut profile of NT GAAFet along the channel direction) should change their locations with each other. The corrected Fig. 1 appears here. © 2023 Author(s).

Published
2023

8. Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review

Author

Qin, Laixiang, Li, Chunlai, Wei, Yiqun, Hu, Guoqing, Chen, Jingbiao, Li, Yi, Du, Caixia, Xu, Zhangwei, Wang, Xiumei, He, Jin, Qin, Laixiang, Li, Chunlai, Wei, Yiqun, Hu, Guoqing, Chen, Jingbiao, Li, Yi, Du, Caixia, Xu, Zhangwei, Wang, Xiumei, and He, Jin

Abstract

With transistors scaling down to 3 nm node and beyond, short channel effect (SCE) as well as power consumption dissipation present immense challenges for further scaling down of the transistor. Hence the Gate all around field effect transistor (GAA-FET) is proposed to replace the Fin field effect transistor (FinFET) in 3 nm technology node and beyond due to its better gate control over the channel with surrounding gate structure, thus providing improved SCE constraint ability. Traditional transistors suffer from the problems of 'Boltzmann Tyranny' and cannot overcome the subthreshold swing (SS) limit of 60 mV/dec at room temperature. To maintain high I on and avoid I off from increasing too much, supply voltage ( VDD ) of the conventional transistor cannot scale down proportionally with the dimension of the transistor. The concept of negative capacitance (NC) has been demonstrated to be able to obtain sub-60 mV/dec SS with the ability of amplifying the potential of the channel region without VDD increment. The novel device structure of negative capacitance gate all around field effect transistor(NC GAA-FET) can combine both the advantages of GAA-FET and NC-FET, and is the most promising ultra-low power consumption device and promises to sustain the Moore's law further beyond what is predicted now. Whereas, according to our knowledge, there have been few review papers about NC GAA-FET till now. Herein, we summarize the recent developments of the NC GAA-FET both in simulation and experimental aspects, which we believe will bring about profound changes to the further development of NC GAA-FET devices. © 2013 IEEE.

Published
2023

11. Erratum: "Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor" [AIP Adv. 13, 065006 (2023)].

Author

Qin, Laixiang, Li, Chunlai, Wei, Yiqun, Xie, Ziang, and He, Jin

Subjects
*FIELD-effect transistors, *NANOTUBES
Abstract

REFERENCE 1 L. Qin, C. Li, Y. Wei, Z. Xie, and J. He, "Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor", AIP Adv. 13, 065006 (2023). Figure 1 that depicts the 3D structures and y/x-cut profiles of the devices in the article [AIP Adv. B 13 b , 065006, (2023)[1]] has some errors that need to be corrected, where (b) (3D structure of NW GAAFET) and (c) (3D structure of NT GAAFET); (h) (x-cut profile of NW GAAFet along the channel direction); and (i) (x-cut profile of NT GAAFet along the channel direction) should change their locations with each other. [Extracted from the article]

Published
2023
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12. Efficient small molecular organic light emitting diode with graphene cathode covered by a Sm layer with nano-hollows and n-doped by Bphen:Cs2CO3in the hollows

Author

Yao, Li, primary, Li, Lei, additional, Qin, Laixiang, additional, Ma, Yaoguang, additional, Wang, Wei, additional, Meng, Hu, additional, Jin, Weifeng, additional, Wang, Yilun, additional, Xu, Wanjin, additional, Ran, Guangzhao, additional, You, Liping, additional, and Qin, Guogang, additional

Published
2017
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14. Optical absorption characteristics of nanometer and submicron a-Si:H solar cells with two kinds of nano textures

Author

Qin Laixiang, G. G. Qin, Wang Wei, Xu Wanjin, and Xie Ziang

Subjects
Silicon, Materials science, Absorption spectroscopy, Surface Properties, law.invention, Absorption, Nanopores, Optics, Electric Power Supplies, law, Nano, Solar cell, Solar Energy, Computer Simulation, Texture (crystalline), Absorption (electromagnetic radiation), business.industry, Equipment Design, Models, Theoretical, Atomic and Molecular Physics, and Optics, Equipment Failure Analysis, Refractometry, Attenuation coefficient, Computer-Aided Design, Nanoparticles, Nanometre, business, Electron-beam lithography, Hydrogen
Abstract

The optical absorption properties of a-Si:H have acquired much attention in solar cell(SC) research. In this paper, we studied enhancement of light absorption in the a-Si:H(10%H) SCs with thicknesses from 31.25nm to 2μm and with nano textures of the column-shaped nanohole (CLNH) array and of the cone-shaped nanohole (CNNH) array, via the Finite Difference Time Domain (FDTD) simulation. For a given type of nano texture and film thickness, d, the ultimate efficiency, the ideal efficiency without considering carrier combinations, is optimized over array period, p, and filling fraction, f, and is defined as the optimized ultimate efficiency, η(0). The simulation results demonstrated that: even for the CLNH textured a-Si:H(10%H) SCs as thin as 62.5 nm,η(0) is 19.7%. When the a-Si:H(10%H) SC is thinner than a critical depth of about 250nm, the CLNH texture is more efficient than the CNNH texture, and vice versa. When the thicknesses of SCs are very thin, especially smaller than 100nm, the efficiencies of the a-Si:H(10%H) SCs are evidently higher than those of the c-Si SCs. For example, in the CLNH arrays, when d = 62.5nm, η(0)for the a-Si:H(10%H) SCs is higher than the c-Si SCs by a factor of approximate 2.3.

Published
2013

17. Refractive index and extinction coefficient of CH_3NH_3PbI_3 studied by spectroscopic ellipsometry

Author

Liu Shifeng, Wang Wei, G. G. Qin, Du Honglin, Xie Ziang, Chen Zhi-Jian, Pang Shuping, Wang Shu-Feng, Yan Yu, Yu Minghui, Qin Laixiang, and Yao Li

Subjects
Materials science, Band gap, business.industry, Analytical chemistry, Molar absorptivity, Evaporation (deposition), Electronic, Optical and Magnetic Materials, Optics, Attenuation coefficient, Dispersion (optics), Thin film, business, Refractive index, Visible spectrum
Abstract

Research concerning CH3NH3PbI3 solar cells (SCs) has attracted great attention. However, the CH3NH3PbI3 material’s critical dispersion relationships, i.e. the refractive index and the extinction coefficient, n(λ) and k(λ), as functions of λ, have been little studied. Without this knowledge, it will be difficult to quantitively investigate the optical properties of the CH3NH3PbI3 SCs. We studied n(λ) and k(λ) of CH3NH3PbI3 with spectroscopic ellipsometry. The CH3NH3PbI3 film was fabricated by dual-source evaporation, and the surface roughness was investigated to facilitate SE modeling. With the acquired n(λ) and k(λ), we applied the finite difference time domain method to calculate the ultimate efficiency, η(d), without considering carrier recombination, of the planar CH3NH3PbI3 SC as a function of the film thickness, d, from 31.25 nm to 2 μm, and compared with those of GaAs, c-Si, and a-Si:H(10%H) SCs. It is demonstrated that, η(d) for CH3NH3PbI3 SC is a little smaller than, but very close to that for the GaAs SC, however, much larger than that for the c-Si SC, for all d calculated; and much larger than that for the a-Si:H(10%H) SC when d > 100 nm. Apart from an appropriate band gap near 1.5 eV, the larger k(λ) and smaller n(λ) of CH3NH3PbI3 explain why the CH3NH3PbI3 SC has high efficiency.

Published
2014

19. Enhancing the efficiency of TiO2-perovskite heterojunction solar cell via evaporating Cs2CO3 on TiO2.

Author

Qin, Laixiang, Xie, Ziang, Yao, Li, Yan, Yu, Pang, Shuping, Wei, FENg, and Qin, G. G.

Subjects
*SOLAR power plants, *SOLAR energy, *SOLAR cells, *PEROVSKITE, *HETEROJUNCTIONS, *PHOTOVOLTAIC effect
Abstract

In a TiO2-perovskite heterojunction solar cell (TiO2-PHSC), besides the perovskite CH3NH3PbX3, TiO2 as one side of the TiO2/CH3NH3PbX3 heterojunction also plays an important role in the photovoltaic effect. In order to improve the performance of the TiO2-PHSC with the structure of glass/FTO/compact TiO2/mesoporous TiO2/CH3NH3PbI3- xCl x /poly-TPD (poly( N, N ′-bis(4-butylphenyl)- N, N ′-bis(phenyl)benzidine))/Au, a 2 nanometer thick Cs2CO3 layer is thermally evaporated on the mesoporous TiO2 layer. The short-circuit current density ( Jsc) raises from 17.7 mA cm-2 to 18.9 mA cm-2, the open-circuit voltage ( Voc) from 0.81 V to 0.87 V, and the fill factor (FF) from 55.2% to 67.3%; as a result, the power conservation efficiency (PCE) increases from 8.0% to 11.1% under AM 1.5G solar illumination (100 mW cm-2). Moreover, in a TiO2-PHSC free of mesoporous TiO2, where Cs2CO3 is evaporated on the compact TiO2 layer, the Jsc, Voc, FF and PCE values increase from 16.0 mA cm-2, 0.83 V, 50.8% and 6.7% to 17.9 mA cm-2, 0.90 V, 59.3%, and 9.5%, respectively. The reasons of the PCE increase for either the first kind of TiO2-PHSC or the mesoporous-TiO2-free TiO2-PHSC with a nanometer-thick Cs2CO3 layer on mesoporous TiO2 or compact TiO2 are discussed. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2014
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20. Enhancing the efficiency of TiO2-perovskite heterojunction solar cell via evaporating Cs2CO3 on TiO2.

Author

Qin, Laixiang, Xie, Ziang, Yao, Li, Yan, Yu, Pang, Shuping, Wei, FENg, and Qin, G. G.

Subjects
SOLAR power plants, SOLAR energy, SOLAR cells, PEROVSKITE, HETEROJUNCTIONS, PHOTOVOLTAIC effect
Abstract

In a TiO2-perovskite heterojunction solar cell (TiO2-PHSC), besides the perovskite CH3NH3PbX3, TiO2 as one side of the TiO2/CH3NH3PbX3 heterojunction also plays an important role in the photovoltaic effect. In order to improve the performance of the TiO2-PHSC with the structure of glass/FTO/compact TiO2/mesoporous TiO2/CH3NH3PbI3- xCl x /poly-TPD (poly( N, N ′-bis(4-butylphenyl)- N, N ′-bis(phenyl)benzidine))/Au, a 2 nanometer thick Cs2CO3 layer is thermally evaporated on the mesoporous TiO2 layer. The short-circuit current density ( Jsc) raises from 17.7 mA cm-2 to 18.9 mA cm-2, the open-circuit voltage ( Voc) from 0.81 V to 0.87 V, and the fill factor (FF) from 55.2% to 67.3%; as a result, the power conservation efficiency (PCE) increases from 8.0% to 11.1% under AM 1.5G solar illumination (100 mW cm-2). Moreover, in a TiO2-PHSC free of mesoporous TiO2, where Cs2CO3 is evaporated on the compact TiO2 layer, the Jsc, Voc, FF and PCE values increase from 16.0 mA cm-2, 0.83 V, 50.8% and 6.7% to 17.9 mA cm-2, 0.90 V, 59.3%, and 9.5%, respectively. The reasons of the PCE increase for either the first kind of TiO2-PHSC or the mesoporous-TiO2-free TiO2-PHSC with a nanometer-thick Cs2CO3 layer on mesoporous TiO2 or compact TiO2 are discussed. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2014
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21. Efficient small molecular organic light emitting diode with graphene cathode covered by a Sm layer with nano-hollows and n-doped by Bphen:Cs 2 CO 3 in the hollows.

Author

Yao L, Li L, Qin L, Ma Y, Wang W, Meng H, Jin W, Wang Y, Xu W, Ran G, You L, and Qin G

Abstract

Graphene is a favorable candidate for electrodes of organic light emitting diodes (OLEDs). Graphene has quite a high work function of ∼4.5 eV, and has been extensively studied when used as anodes of OLEDs. In order to use graphene as a cathode, the electron injection barrier between the graphene cathode and the electron transport layer has to be low enough. Using 4,7-diphenyl-1,10-phenanthroline (Bphen):Cs 2 CO 3 to n-dope graphene is a very good method, but the electron injection barrier between the n-doped graphene and Bphen:Cs 2 CO 3 is still too high to be ∼1.0 eV. In this work, in order to further reduce the electron injection barrier, a novel method is suggested. On the graphene cathode, a Sm layer with a lot of nano-hollows, and subsequently a layer of Bphen:Cs 2 CO 3 , are deposited. The Bphen:Cs 2 CO 3 can n-dope graphene in the nano-hollows, and the Fermi level of the graphene rises. The nano Sm layer is very easily oxidized. Oxygen adsorbed on the surface of graphene may react with Sm to form an O - -Sm + dipole layer. On the areas of the Sm oxide dipole layer without nano-hollows, the electron injection barrier can be further lowered by the dipole layer. Electrons tend to mainly inject through the lower electron barrier where the dipole layer exists. Based on this idea, an effective inverted small molecular OLED with the structure of graphene/1 nm Sm layer with a lot of nano-hollows/Bphen:Cs 2 CO 3 /Alq 3 :C545T/NPB/MoO 3 /Al is presented. The maximum current efficiency and maximum power efficiency of the OLED with a 1 nm Sm layer are about two and three times of those of the reference OLED without any Sm layer, respectively.

Published
2017
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