276 results on '"Pouget, V."'
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2. Single-Event Latchup sensitivity: Temperature effects and the role of the collected charge
3. Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data
4. Reliability-driven pin assignment optimization to improve in-orbit soft-error rate
5. Design exploration of majority voter architectures based on the signal probability for TMR strategy optimization in space applications
6. Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells
7. Approximate TMR based on successive approximation and loop perforation in microprocessors
8. Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions
9. A calculation method to estimate single event upset cross section
10. Structural pattern extraction from asynchronous two-photon laser fault injection using spectral analysis
11. Impact of Aging Degradation on Heavy-Ion SEU Response of 28-nm UTBB FD-SOI Technology
12. Bridging RHA Methodology From Component to System Level Applied to System-on-Modules
13. Physics of Semiconductor Devices: A 2D Simulation Training Course
14. Laser-induced Transients in a GaN-on-Si Power HEMT using Si-SPA Optical Parameters
15. Microprocessor Error Diagnosis by Trace Monitoring Under Laser Testing
16. Backside Laser Testing of Single-Event Effects in GaN-on-Si Power HEMTs
17. A new technique for SET pulse width measurement in chains of inverters using pulsed laser irradiation
18. Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains
19. Study of single-event transients in high-speed operational amplifiers
20. In-depth resolution for LBIC technique by two-photon absorption
21. A heavy-ion tolerant clock and data recovery circuit for satellite embedded high-speed data links
22. Single event-induced instability in linear voltage regulators
23. Radiation hardened by design RF circuits implemented in 0.13 [micro]m CMOS technology
24. A radiation-hardened injection locked oscillator devoted to radio-frequency applications
25. Influence of laser pulse duration in single event upset testing
26. Rate predictions for single-event effects--critique II
27. Investigation of millisecond-long analog single-event transients in the LM6144 op amp
28. Application of various optical techniques for ESD defect localization
29. Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation
30. Single-event sensitivity of a single SRAM cell
31. Exploiting Transistor Folding Layout as RHBD Technique Against Single-Event Transients
32. Analysis of SET Propagation in a System in Package Point of Load Converter
33. Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
34. Effect of Temperature on Single Event Latchup Sensitivity
35. Environmental health risks perceptions: results from cross-sectional surveys in Southeastern France
36. Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure
37. INVESTIGATION OF SINGLE-EVENT TRANSIENTS IN FAST INTEGRATED CIRCUITS WITH A PULSED LASER
38. Single Event Latchup Cross Section Calculation from TCAD Simulations – Effects of the Doping Profiles and Anode to Cathode Spacing
39. Silicon carbide power MOSFETs under neutron irradiation: Failure In Time demonstration and long term reliability degradation evaluation
40. Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits
41. From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to Dynamic Laser Testing
42. Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization
43. Aging and Gate Bias Effects on TID Sensitivity of Wide Bandgap Power Devices
44. Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing
45. Impact of Complex Logic Cell Layout on the Single-Event Transient Sensitivity
46. Front Side and Backside OBIT Mappings applied to Single Event Transient Testing
47. Theoretical Investigation of an Equivalent Laser LET
48. Analysis of Single-Event Effects in DDR3 and DDR3L SDRAMs Using Laser Testing and Monte-Carlo Simulations
49. Laser cross section measurement for the evaluation of single-event effects in integrated circuits
50. Total Ionizing Dose effects in DDR3 SDRAMs under Co-60 and X-ray irradiation
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