Single Event Latchup Cross Section Calculation from TCAD Simulations – Effects of the Doping Profiles and Anode to Cathode Spacing

Authors :: Guagliardo, S.
Wrobel, Frédéric
Aguiar, Y. Q.
Autran, J.-L.
Leroux, P.
Saigné, F.
Pouget, V.
Touboul, Antoine
Institut d’Electronique et des Systèmes (IES)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Radiations et composants (RADIAC)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Source :: IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects 2019, IEEE RADECS 2019, IEEE RADECS 2019, Sep 2019, Montpellier, France, 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Publication Year :: 2019
Publisher :: HAL CCSD, 2019.
Abstract: ispartof: pages:92-96 ispartof: 2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) pages:92-96 ispartof: 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) location:FRANCE, Montpellier date:16 Sep - 20 Sep 2019 status: published

Subjects :: TCAD simulations
Cross section
Physics::Instrumentation and Detectors
Condensed Matter::Superconductivity
Single-Event Latchup
Condensed Matter::Strongly Correlated Electrons
[SPI.TRON]Engineering Sciences [physics]/Electronics

Language :: English
ISBN :: 978-1-72815-699-6
ISBNs :: 9781728156996
Database :: OpenAIRE
Journal :: IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects 2019, IEEE RADECS 2019, IEEE RADECS 2019, Sep 2019, Montpellier, France, 2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Accession number :: edsair.doi.dedup.....1d6442f698fac0543ddeb413791cf1fa

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