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3. Structural defects and microstrain in GaN induced by Mg ion implantation

Author

Pong, B.J., Pan, C.J., Teng, Y.C., Chi, G.C., Li, W.H., Lee, K.C., and Lee, Chih-Hao

Subjects
Ion implantation -- Observations, Annealing -- Observations, Thin films -- Observations, Physics
Abstract

GaN films implanted with Mg and Be ions were studied for optical and structural characteristics. Annealed Mg implanted GaN showed low temperature photoluminescence (PL) spectra of 356 nm near band edge emission, and a 528 nm green band deep level emission. The 528 nm green band emission may be attributed to the Mg implantation induced clustering defect.

Published
1998

4. Photoluminescence spectroscopy of Mg-doped GaN

Author

Sheu, J.K., Su, Y.K., Chi, G.C., Pong, B.J., Chen, C.Y., Huang, C.N., and Chen, W.C.

Subjects
Photoluminescence -- Research, Thin films -- Research, Chemical vapor deposition -- Usage, Physics
Abstract

The p-type conductivity of Mg-doped GaN has been studied by altering the CP(sub2)Mg flow rate during growth. Photoluminescence (PL) spectra were also measured to examine the origin of Mg-doped GaN film luminescence.On one donor-to-acceptor pair (DAP) emission line was observed at around 2.95 eV., different from previous results. This indicates that the transition is due to band-to-impurity.

Published
1998

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