Structural defects and microstrain in GaN induced by Mg ion implantation

Authors :: Pong, B.J.
Pan, C.J.
Teng, Y.C.
Chi, G.C.
Li, W.H.
Lee, K.C.
Lee, Chih-Hao
Source :: Journal of Applied Physics. June 1, 1998, Vol. 83 Issue 11, p5992, 5 p.
Publication Year :: 1998
Abstract: GaN films implanted with Mg and Be ions were studied for optical and structural characteristics. Annealed Mg implanted GaN showed low temperature photoluminescence (PL) spectra of 356 nm near band edge emission, and a 528 nm green band deep level emission. The 528 nm green band emission may be attributed to the Mg implantation induced clustering defect.