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A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (ANAHEIM) and IRT have been combined with published data of JPL and Aerospace to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

New test data have been combined with published data to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. These data have been arranged to exibit the SEU susceptibility of devices by function, technology, and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

A significant number of spacecraft operational anomalies are believed to be associated with cosmic-ray-induced soft errors in the LSI memories. Test programs using a cyclotron to simulate cosmic rays have established conclusively that many common commercial memory types are vulnerable to heavy-ion upset. A description is given of the methodology and the results of a detailed analysis for predicting the bit-error rate in an assumed space environment for CMOS memory devices. Results are presented for three types of commercially available CMOS 1,024-bit RAMs. It was found that the HM6508 is susceptible to single-ion induced latchup from argon and krypton ions. The HS6508 and HS6508RH and the CDP1821 apparently are not susceptible to single-ion induced latchup.

Large-scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments and device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments, Inc.

An experimental and analytical study was performed on the impact of galactic cosmic rays on the TIROS-N satellite memory in orbit. Comparisons were made of systems equipped with the Harris HMI-6508 1 x 1024 CMOS/bulk RAM and the RCA CDP-1821 1 x 1024 bit CMOS/SOS RAM. Based upon the experimental results, estimated bit error rates were determined. These were at least 8.0 bit errors/day for a 300 kilobit memory with the HMI-6508 and .014 bit errors/day with the CDF-1821. It was also estimated that the HMI-6508 latchup rate in orbit is at least two orders of magnitude less than the bit error rates; the CDP-1821 will not latchup.