1. On the Low-Frequency Noise Characterization of Z2-FET Devices
- Author
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Carlos Marquez, Carlos Navarro, Santiago Navarro, Jose L. Padilla, Luca Donetti, Carlos Sampedro, Philippe Galy, Yong-Tae Kim, and Francisco Gamiz
- Subjects
1T-DRAM ,noise measurement ,p-i-n diodes ,semiconductor device reliability ,silicon on insulator technology ,Z²-FET ,Electrical engineering. Electronics. Nuclear engineering ,TK1-9971 - Abstract
This paper addresses the low-frequency noise characterization of Z2-FET structures. These double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and box (UTBB) 28-nm FDSOI technology and designed to operate as 1T-DRAM memory cells, although other applications, as for example electro static discharge (ESD) protection, have been reported. The experimentally extracted power spectral density of current reveals that the high-diode series resistance, carrier number fluctuations due to oxide traps, and gate leakage current are the main noise contributors at high-current regimes. These mechanisms are expected to contribute to the degradation of cell variability and retention time. Higher flicker noise levels have been reported when increasing the vertical electric field. A simple model considering the contribution of the main noise sources is proposed.
- Published
- 2019
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