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33 results on '"Perez, Jean-Philippe"'

3. Electrical Characterization of Type II Superlattice Midwave Infrared Photodetectors Irradiated by Protons

Author

Bataillon, Clara, Tornay, Matthias, Bouschet, Maxime, Perez, Jean-Philippe, Michez, Alain, Saint-Pe, Olivier, Gilard, Olivier, and Christol, Philippe

Abstract

This article reports the influence of proton irradiation on the dark current of Ga-free InAs/InAsSb type II superlattice (T2SL) midwave infrared barrier photodetectors, with a cutoff wavelength of $4.8~\mu $ m at 150 K. The proton irradiation is performed with 60-MeV protons and fluence up to $8~\boldsymbol {\times } 10^{11}$ H+/cm2 on a T2SL detector kept at its operating temperature (150 K) in a cryostat or at room temperature (300 K). Degradation in dark current is observed under proton irradiation due to displacement damage dose (DDD) effects, with the presence of trap-assisted tunneling (TAT) current at -1 V. Trap carrier density, absorbing layer (AL) doping, and minority carrier lifetime are extracted from the measured J–V characteristics.

Published
2024
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4. Ga-free superlattice nBn structure on Si (100): high performance MWIR Photodetector

Author

Bouschet, Maxime, primary, Gilbert, Audrey, additional, Perez, Jean-Philippe, additional, Cerutti, Laurent, additional, Cervera, Cyril, additional, Gravrand, Olivier, additional, Ramiandrasoa, Anthony, additional, Ribet, Isabelle, additional, Péré-Laperne, Nicolas, additional, Christol, Philippe, additional, Rodriguez, Jean-Baptiste, additional, and Tournié, Eric, additional

Published
2023
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5. Near-field radiative heat transfer in thermophotovoltaics and thermophotonics

Author

Lucchesi, Christophe, Legendre, Julien, Thomas, Mathieu, Piqueras, Maud, Cakiroglu, Dilek, Perez, Jean-Philippe, Taliercio, Thierry, Tournié, Eric, Vaillon, Rodolphe, Chapuis, Pierre-Olivier, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Énergie, Photonique et Ondes, Equipe-projet CNRS TREE (Thermal Radiation to Electrical Energy conversion), ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), European Project: 951976,TPX-Power, European Project: 766853,H2020-FETOPEN-1-2016-2017,EFINED(2018), and European Project: 964698,OPTAGON

Subjects
[SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract

International audience

Published
2022

7. Controlling near-field thermal energy for conversion devices and sensing

Author

Lucchesi, Christophe, Legendre, Julien, Nguyen, Khac-Long, Alwakil, Ahmed, Cakiroglu, Dilek, Merchiers, Olivier, Perez, Jean-Philippe, Taliercio, Thierry, Tournié, Eric, Vaillon, R., Chapuis, Pierre-Olivier, Centre d'Energétique et de Thermique de Lyon (CETHIL), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Énergie (NRJ), Photonique et Ondes (PO), Equipe-projet CNRS TREE (Thermal Radiation to Electrical Energy conversion), ANR-16-CE05-0013,DEMO-NFR-TPV,Démonstrateur thermophotovoltaïque en champ proche(2016), European Project: 766853,H2020-FETOPEN-1-2016-2017,EFINED(2018), European Project: 951976,TPX-Power, and European Project: 604668,EC:FP7:NMP,FP7-NMP-2013-LARGE-7,QUANTIHEAT(2013)

Subjects
[SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph]
Abstract

International audience

Published
2022

9. Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure.

Author

Bouschet, Maxime, Arounassalame, Vignesh, Ramiandrasoa, Anthony, Perez, Jean-Philippe, Péré-Laperne, Nicolas, Ribet-Mohamed, Isabelle, and Christol, Philippe

Subjects
ANISOTROPY, ELECTROOPTICS, SUPERLATTICES, INFRARED detectors, PHOTODETECTORS, QUANTUM efficiency
Abstract

In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice midwave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel's equation. Diffusion length values have been extracted from this model ranging from 1.55 µm at 90 K to 7.44 µm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure. [ABSTRACT FROM AUTHOR]

Published
2023
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13. Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging

Author

Bouschet, Maxime, primary, Zavala-Moran, Ulises, additional, Arounassalame, Vignesh, additional, Alchaar, Rodolphe, additional, Bataillon, Clara, additional, Ribet-Mohamed, Isabelle, additional, de Anda-Salazar, Francisco, additional, Perez, Jean-Philippe, additional, Péré-Laperne, Nicolas, additional, and Christol, Philippe, additional

Published
2021
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15. Irradiation Temperature Influence on the Degradation of the Electrical Performances of Midwave Infrared Type-II Superlattice Detectors

Author

Bataillon, Clara, Perez, Jean-Philippe, Alchaar, Rodolphe, Diaz-Thomas, Daniel Andres, Saint-Pe, Olivier, Gilard, Olivier, and Christol, Philippe

Abstract

In this work, we present the influence of the irradiation temperature on electrical characterization of midwave infrared (MWIR) InAs/GaSb type-II superlattice (T2SL) photodetector, showing cutoff wavelength equal to 5 $\mu \text{m}$ at 90 K. The proton irradiations were performed with 60-MeV protons and fluences up to $8\times 10^{11}\,\,\text{H}^{+}$ /cm2 at cryogenic (100 K) or room temperature (300 K). The gamma irradiation, from a Cobalt-60 source, allows to reach a dose up to 50 krad(Si). We observed that degradation of the dark current under proton or gamma irradiations is strongly dependent on the temperature of the detector during irradiation but also on the protection layer used during the detector’s technological process.

Published
2023
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16. InAs/InAsSb T2SL band parameters determination via magnetoabsorption and k.p modeling

Author

Carosella, Francesca, Philippe, Alwin, Krizman, Gauthier, de Vaulchier, L., Rodriguez, J.B., PEREZ, Jean-philippe, CHRISTOL, Philippe, Bastard, Gérald, Guldner, Yves, Ferreira, Robson, Théorie de la Matière Condensée, Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Nano-THz, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de l'ENS - ENS Paris (LPENS), Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP)-Sorbonne Université (SU)-École normale supérieure - Paris (ENS Paris), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2020

17. Low-frequency noise measurements as an investigation tool of pixel flickering in cooled Hg(sub 0.7)Cd(sub 0.3)Te focal plane arrays

Author

Perez, Jean-Philippe, Myara, Mikhael, Alabedra, Robert, Orsal, Bernard, Signoret, Philippe, Leyris, Cedric, and Tourrenc, Jean-Philippe

Subjects
Tellurium -- Electric properties, Mercury compounds -- Electric properties, Complementary metal oxide semiconductors -- Research, Electromagnetic noise -- Measurement, Business, Electronics, Electronics and electrical industries
Abstract

A report on electrical noise measurements on both Hg(sub 0.7)Cd(sub 0.3)Te test patterns and hybrid 320 x 256 focal plane array in order to explain the low-frequency pixel flickering physical origin is presented. The investigation of the full infrared complementary metal-oxyd semiconductor (IRCMOS) infrared detector led the indium bump based interconnecting system to finally point out as a potential excess noise source.

Published
2005

18. Low-frequency FM-noise-induced lineshape: A theoretical and experimental approach

Author

Tourrenc, Jean-Philippe, Signoret, Philippe, Myara, Mikhael, Bellon, Marc, Perez, Jean-Philippe, Gosalbes, Jean-Michel, Alabedra, Robert, and Orsal, Bernard

Subjects
Semiconductor lasers -- Design and construction, Electromagnetic noise -- Analysis, Frequency modulation -- Analysis, Business, Computers, Electronics, Electronics and electrical industries
Abstract

A new mathematical tool is demonstrated that allows prediction of lineshape and linewidth in self-heterodyne (SHE) or self-homodyne methods (SHO) for various kinds of low frequency FM noise in 1/f(super alpha), alpha belongs to]0; 2[. The experimental results reveal a very good agreement with theoretical predictions, with relative errors always lower than 10%.

Published
2005

19. Strongly sub-poissonian electrical noise in 1.55-mu m DBR tunable laser diodes

Author

Myara, Mikhael, Signoret, Philippe, Tourrenc, Jean-Philippe, Perez, Jean-Philippe, Orsal, Bernard, and Jacquet, Joel

Subjects
Semiconductor lasers -- Optical properties, Semiconductor lasers -- Electric properties, Business, Computers, Electronics, Electronics and electrical industries
Abstract

The terminal electrical noise measurements on 1.55-mum DBR tunable laser diodes in the 1Hz-1 MHz frequency range, performed using an electrical correlation method is reported. The influence of Bragg section is discussed.

Published
2004

23. Single-frequency low-noise broadly-tunable extended-cavity VCSEL for gas analysis in the MIR

Author

Garnache, A., Myara, M., Cerutti, L., Ouvrard, A., PEREZ, Jean-philippe, Ducanchez, A., Laurain, A., Bouchier, A., Signoret, P., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Composants à Nanostructure pour le moyen infrarouge (NANOMIR)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2008

27. About the physical origin of pixel flickering in cooled Hg0.7Cd0.3Te infrared photodetectors.

Author

Orsal, Bernard, Perez, Jean-Philippe, Myara, Mikhael, Alabedra, Robert, Leyris, Cedric, Tourrenc, Jean-Philippe, and Signoret, Philippe

Subjects
*DETECTORS, *ENGINEERING instruments, *OPTICS, *SILICON, *INDIUM, *INFRARED equipment
Abstract

We report on electrical noise measurements on both Hg0.7Cd0.3Te test patterns and hybrid 320 × 256 focal plane array in order to explain the low frequency pixel flickering physical origin. Dark and under infrared illumination test patterns characterization highlights that the detector chip isn’t responsible for the flickering phenomenon. Taking into account the silicon readout chip influence when the full IRCMOS infrared detector is investigated, the indium bump based interconnecting system is finally pointed out as a potential excess noise source. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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28. Low and Medium Frequency Noise Levels of fibered very-high-power 1460nm-Pump Laser Diode designed for Raman Amplification.

Author

Chluda, Cedric, Myara, Mikhael, Perez, Jean-Philippe, Signoret, Philippe, and Orsal, Bernard

Subjects
RAMAN effect, ELECTRONIC amplifiers, LASERS, NONLINEAR optics, OPTOELECTRONIC devices, LIGHT amplifiers, SPECTRUM analysis
Abstract

We report low and medium frequency optical noise measurements on very-high-power fibered 1460nm-Pump Lasers (P > 200mW) designed for Raman Amplification. These Fabry-Perot Lasers exhibit spectra from a quite monomode situation (Side Mode Suppression Ratio ≈ 10dB) at near threshold current injection (Ithreshold ≈ 28mA) up to very multimode spectra (5nm Full Width at Half Magnitude) at very high biases (ILaser ≈ 1000mA). In this paper, we have to focus on two main things : on one hand, the low and medium frequency noise behavior of the laser itself and on the other hand the measurement data post-treatment. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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31. Low-Frequency Noise Measurements as an Investigation Tool of Pixel Flickering in Cooled Hg0.7 Cd0.3Te Focal Plane Arrays.

Author

Perez, Jean-Philippe, Myara, Mikhael, Rlabedra, Robert, Orsal, Bernard, Leyris, Cedric, Tourrenc, Jean-Philippe, and Signoret, Philippe

Subjects
*ELECTRONICS, *NOISE measurement, *FOCAL planes, *DETECTORS, *SEMICONDUCTORS, *INFRARED equipment
Abstract

We report on electrical noise measurements on both Rgo,&tauCdo,3Te test patterns and hybrid 320 × 256 focal plane array in order to explain the low-frequency pixel flickering physical origin. Dark and under infrared illumination test patterns characterization highlights that the detector chip is not responsible for the flickering phenomenon. Taking into account the silicon readout chip influence when the full infrared complementary metal-oxyd semiconductor (IRCMOS) infrared detector is hives- ligated, the indium bump based interconnecting system is finally pointed out as a potential excess noise source. [ABSTRACT FROM AUTHOR]

Published
2005
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32. Strongly Sub-Poissonian Electrical Noise in 1.55-, μm DBR Tunable Laser Diodes.

Author

Myara, Mikhaël, Signoret, Philippe, Tourrenc, Jean-Philippe, Perez, Jean-Philippe, Orsal, Bernard, and Jacquet, Joël

Subjects
ELECTRIC noise, DIODES, ELECTRIC currents, NOISE measurement, TUNABLE lasers, VACUUM tubes
Abstract

We report terminal electrical noise measurements on 1.55-μm DBR tunable laser diodes in the 1 Hz-1 MHz frequency range, performed using an electrical correlation method. These measurements are compared with a comprehensive electrical model based on rate equation formalism. Taking into account diffusion phenomenon and structural parameters, we obtain a complete agreement between the model and the measurements above threshold and a quite similar tendency below threshold. The influence of Bragg section bias is also discussed. [ABSTRACT FROM AUTHOR]

Published
2004
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