1. Structural effects in UO$_2$ thin films irradiated with U ions
- Author
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Popel, AJ, Adamska, AM, Martin, PG, Payton, OD, Lampronti, GI, Picco, L, Payne, L, Springell, R, Scott, TB, Monnet, I, Grygiel, C, Farnan, I, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Popel, Aleksej [0000-0003-4436-9961], Farnan, Ian [0000-0001-7844-5112], and Apollo - University of Cambridge Repository
- Subjects
[PHYS]Physics [physics] ,Nuclear and High Energy Physics ,thin film ,EBSD ,ion irradiation ,sub-03 ,UO2 ,nano-structure ,single crystal ,Instrumentation ,UO$_2$ - Abstract
This work presents the results of a detailed structural characterisation of irradiated and unirradiated single crystal thin films of UO$_2$. Thin films of UO$_2$ were produced by reactive magnetron sputtering onto (0 0 1), (1 1 0) and (1 1 1) single crystal yttria-stabilised zirconia (YSZ) substrates. Half of the samples were irradiated with 110 MeV $^{238}$U$^{31+}$ ions to fluences of 5 $\times$ 10$^{10}$, 5 $\times$ 10$^{11}$ and 5 $\times$ 10$^{12}$ ions/cm$^2$ to induce radiation damage, with the remainder kept for reference measurements. It was observed that as-produced UO$_2$ films adopted the crystallographic orientation of their YSZ substrates. The irradiation fluences used in this study however, were not sufficient to cause any permanent change in the crystalline nature of UO$_2$. It has been demonstrated that the effect of epitaxial re-crystallisation of the induced radiation damage can be quantified in terms of kernel average misorientation (KAM) and different crystallographic orientations of UO$_2$ respond differently to ion irradiation.
- Published
- 2016
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