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We report the static and dynamic magnetic characteristics of a high-layer-number NiFe/FeMn multilayer test structure with potential applications in broadband absorber and filter devices. To allow fine control over the absorption linewidths and to understand the mechanisms governing the resonances in a tailored structure similar to that expected to be used in real world applications, the multilayer was intentionally designed to have layer thickness and interface roughness variations. Magnetometry measurements show that the sample has complex hysteresis loops with features consistent with single ferromagnetic film reversals. Characterisation by transmission electron microscopy allows us to correlate the magnetic properties with structural features, including the film widths and interface roughnesses. Analysis of resonance frequencies from broadband ferromagnetic resonance measurements as a function of field magnitude and orientation provide values of the local exchange bias, rotatable anisotropy, and uniaxial anisotropy fields for specific layers in the stack and explain the observed mode softening. The linewidths of the multilayer are adjustable around the bias field, approaching twice that seen at larger fields, allowing control over the bandwidth of devices formed from the structure. [ABSTRACT FROM AUTHOR]

The admittances and subthreshold characteristics of capacitors and MOSFETs on buried and surface In0.53Ga0.47As channel flatband wafers, with a dielectric of Al2O3 deposited on In0.53Ga0.47As, are reported. The admittance characteristics of both wafers indicate the presence of defect states within the oxide, in common with a number of other oxides on In0.53Ga0.47As. The two wafers studied have not been hydrogen annealed, but do show some similar features to FGA treated oxides on n+ substrates. We discuss how the possible presence of residual hydroxyl ions in as-grown Al2O3 may explain these similarities and also account for many of the changes in the properties of FGA treated n+ samples. The issues around the comparison of subthreshold swing (SS) results and the impact of transistor design parameters on the energy portion of the defect state distribution affecting efficient device switching are discussed. The interface state model is applied to low source-drain voltage SS data to extract an effective interface state density (Dit) that includes interface and oxide traps. The logarithmic gate voltage sweep rate dependence of the SS Dit is used to extract an oxide trap density (Dot) and a simple method is used to estimate the Fermi level position within the band gap, Et. The Al2O3 Dit(Et) and Dot(Et) distributions are found to be similar to each other and to the results of our analysis of Gd0.25Ga0.15O0.6/Ga2O3 and HfO2/Al2O3 on In0.53Ga0.47As, adding weight to the suggestion of there being a common defect state distribution and perhaps a common cause of defects states for a number of oxides on In0.53Ga0.47As. [ABSTRACT FROM AUTHOR]

The admittance characteristics of a well understood oxide system of Gd0.25 Ga0.15 O0.60/Ga2 O3 on In0.53 Ga0.47As are studied at low temperature where the majority of the defect states are frozen. The capacitance-voltage (C-V) characteristics are broadened beyond those expected for an ideal sample. The broadening is ascribed to the presence of a non-uniform surface potential. We report a simple method for measuring the surface potential distribution width using the ac signal amplitude dependence of the C-V profile. A distribution of surface potentials can explain the observed behavior, but only if it includes the admittance of the semiconductor. This is in contrast to the usual approximation that the effect of a distribution of surface potentials on the admittance of the semiconductor is ignored. It is found that the charge state of defect states in the oxide and variation in the doping density of the substrate contribute to the broadening. The implications for inclusion of the semiconductor admittance for the interpretation of ideal characteristics and for the analysisof characteristics with interface states are explored. Both the conductance method and the quasi-equilibrium C-V methods are affected to some extent. An alternative method that can more accurately extract information from the admittance characteristics of the MOS samples is proposed. [ABSTRACT FROM AUTHOR]

The admittances and subthreshold characteristics of capacitors and MOSFETs on buried InxGa1-xAs channel wafers with a dielectric stack of Gd0.25Ga0.15O0.6/Ga2O3 deposited on GaAs and In0.53Ga0.47As are reported. Both the GaAs and InGaAs interface samples show admittance characteristics indicative of the presence of defect states within the oxide, in agreement with previously reported data from the same oxides on n+ substrates. The interface state model is applied to the admittance data to extract an apparent interface state density (Dit) that includes interface and oxide states. The Dit profiles are very different and have pronounced effects on the device performance. The device subthreshold swings (SS) at low source-drain voltages are also used to extract an apparent Dit. A simple method is used to estimate the Fermi-level position within the bandgap (Et) at threshold, and the resulting Dit(Et) are found to be in good agreement with the admittance data. The importance of proper interpretation of SS and Dit in general and in GaAs interface devices in particular is emphasized. A model that accounts for the logarithmic sweep rate dependence of the extracted Dit due to the presence of oxide states is reported and used to estimate their density from SS measurements. The implications of the band parameters of an oxide with defect states within it for the comparison of different oxides on the same substrate and the issues around the comparison of results in general are discussed. [ABSTRACT FROM AUTHOR]

The electrical characteristics of n+ GaAs and In0.53Ga0.47As MOS capacitors with a dielectric stack of Ga2O3/Gd0.25Ga0.15O0.6 have been examined in detail and compared to the interface state model. The deviations from the model are assessed and the limitations of different interface state density extraction techniques are highlighted. The results of a model which accounts for many of the electrical characteristics of the InGaAs material by including states within the oxide and at the interface are reported. A hypothesis that may explain the difference between the GaAs and InGaAs characteristics and the similarities between the properties of many different oxides on InGaAs is discussed, leading to suggestions on how the oxide quality may be improved. [ABSTRACT FROM AUTHOR]

Test devices have been fabricated on two specially grown GaAs/AlGaAs wafers with 10 nm thick gate dielectrics composed of either Ga2O3 or a stack of Ga2O3 and Gd0.25Ga0.15O0.6. The wafers have two GaAs transport channels either side of an AlGaAs barrier containing a Si δ-doping layer. Temperature dependent capacitance-voltage (C-V) and current-voltage (I-V) studies have been performed at temperatures between 10 and 300 K. Bias cooling experiments reveal the presence of DX centers in both wafers. Both wafers show a forward bias gate leakage that is by a single activated channel at higher temperatures and by tunneling at lower temperatures. When Gd0.25Ga0.15O0.6 is included in a stack with 1 nm of Ga2O3 at the interface, the gate leakage is greatly reduced due to the larger band gap of the Gd0.25Ga0.15O0.6 layer. The different band gaps of the two oxides result in a difference in the gate voltage at the onset of leakage of ∼3 V. However, the inclusion of Gd0.25Ga0.15O0.6 in the gate insulator introduces many oxide states (≥4.70×1012 cm-2). Transmission electron microscope images of the interface region show that the growth of a Gd0.25Ga0.15O0.6 layer on Ga2O3 disturbs the well ordered Ga2O3/GaAs interface. We therefore conclude that while including Gd0.25Ga0.15O0.6 in a dielectric stack with Ga2O3 is necessary for use in device applications, the inclusion of Gd decreases the quality of the Ga2O3/GaAs interface and near interface region by introducing roughness and a large number of defect states. [ABSTRACT FROM AUTHOR]

Molecular beam epitaxy has been used to deposit Ga2O3 onto GaAs(001) to form a III-V/oxide interface. Photoluminescence is used to monitor the interface quality and to compare these films with samples known to have a low interface state density and an unpinned Fermi level. An additional flux of molecular oxygen has been used during oxide growth, and the impact on growth rate is reported. A rf plasma source is shown to produce mainly neutral atomic oxygen. Atomic oxygen has a significant impact on the oxide growth mechanism and interface quality. The performance of metal oxide semiconductor field effect transistors fabricated from GaAs structures with their surface unpinned by Ga2O3 is discussed briefly. [ABSTRACT FROM AUTHOR]

The 300-K admittance characteristics of n+ In0.53Ga0.47As MOS capacitors with a dielectric stack of Gd0.25Ga0.15O0.6/Ga2O3 in as-grown condition are examined in detail and compared to an oxide trap model that we previously introduced. The model explains many of the observed features not contained in the interface state model. By fitting the model to experimental data, we extract a distribution of defect states in space and energy within the oxide and at the oxide/semiconductor interface separately. Oxide states are the dominant defects over a wide range of energy. The defect state densities are not subject to the usual resolution limits of conventional analyses. Using this approach, it is possible to characterize relatively rapidly a wide range of energies at a single temperature without the need for reaching the low or high limits of frequency. The implications for the conventional interface state density (Dit) extraction techniques are explored. It is shown how oxide states can affect the extraction of sample parameters, particularly the insulator capacitance, and can result in a range of extracted Dit values. We believe these contribute to the wide range of Dit reported in the literature from similar admittance characteristics of a number of oxides on In0.53Ga0.47As. [ABSTRACT FROM AUTHOR]

Using Lorentz transmission electron microscopy and small-angle electron scattering techniques, we investigate the temperature-dependent evolution of a magnetic stripe pattern period in thin-film lamellae of the prototype monoaxial chiral helimagnet CrNb3S6. The sinusoidal stripe pattern appears due to formation of a chiral helimagnetic order (CHM) in this material. We found that as the temperature increases, the CHM period is initially independent of temperature and then starts to shrink above the temperature of about 90 K, which is far below the magnetic phase transition temperature for the bulk material Tc (123 K). The stripe order disappears at around 140 K, far above Tc. We argue that this cascade of transitions reflects a three-stage hierarchical behavior of melting in two dimensions. [ABSTRACT FROM AUTHOR]

This article reviews recent literature on bereavement concerning the typical features of both normal and pathological grief. It discusses the distinctive aspects of grief in children and concludes with suggestions for physicians seeking to assist bereaved families.