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2. A scalable multi-dimensional NoC simulation model for diverse spatio-temporal traffic patterns

3. Wire-bonded through-silicon vias with low capacitive substrate coupling

6. Minimal-power, delay-balanced smart repeaters for interconnects in the nanometer regime

8. Modelling noise and delay in VLSI circuits

9. Maximizing throughput over parallel wire structures in the deep submicrometer regime

40. Correction: Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process.

41. Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process.

42. Nanoelectromechanical relay without pull-in instability for high-temperature non-volatile memory.

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