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111 results on '"Pallecchi, Emiliano"'

1. Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs

Author

Mavredakis, Nikolaos, Pacheco-Sanchez, Anibal, Wei, Wei, Pallecchi, Emiliano, Happy, Henri, and Jiménez, David

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is precisely validated by high-frequency (up to 18 GHz) on-wafer measurements from a 300 nm device. These parameters are studied simultaneously, in contrast to other works which focus exclusively on few. Efficient procedures have been applied to GFETs for the first time to remove contact and gate resistances from the Y-parameters. The use of these methods yields straightforward equations for extracting the small-signal model parameters, which is extremely useful for radio-frequency circuit design. Furthermore, we show for the first time experimental validation vs. both gate voltage and frequency of the intrinsic GFET non-reciprocal capacitance model. Accurate models are also presented for the gate voltage-dependence of the measured unity-gain and maximum oscillation frequencies as well as of the current and power gains.

Published
2023
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3. Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs

Author

Mavredakis, Nikolaos, Pacheco-Sanchez, Anibal, Sakalas, Paulius, Wei, Wei, Pallecchi, Emiliano, Happy, Henri, and Jimenez, David

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the specific noise as drain current increases whereas a saturation trend is observed at very high carrier density regime. Besides, short-channel effects like velocity saturation also result in an increment of noise at higher electric fields. The main goal of this work is to propose a physics-based compact model that accounts for and accurately predicts the above experimental observations in short-channel GFETs. In contrast to long-channel MOSFET based models adopted previously to describe thermal noise in graphene devices without considering the degenerate nature of graphene, in this work a model for short-channel GFETs embracing the 2D materials underlying physics and including a bias dependency is presented. The implemented model is validated with de-embedded high frequency data from two short-channel devices at Quasi-Static region of operation. The model precisely describes the experimental data for a wide range of low to high drain current values without the need of any fitting parameter. Moreover, the consideration of the degenerate nature of graphene reveals a significant decrease of noise in comparison with the non degenerate case and the model accurately captures this behavior. This work can also be of outmost significance from circuit designers aspect, since noise excess factor, a very important figure of merit for RF circuits implementation, is defined and characterized for the first time in graphene transistors.

Published
2021
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4. Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

Author

Pacheco-Sanchez, Anibal, Mavredakis, Nikolaos, Feijoo, Pedro C., Wei, Wei, Pallecchi, Emiliano, Happy, Henri, and Jiménez, David

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-free experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the traps effects on the channel potential within the device. High-frequency figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and high-frequency applications.

Published
2020
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5. Low-frequency noise parameter extraction method for single layer graphene FETs

Author

Mavredakis, Nikolaos, Wei, Wei, Pallecchi, Emiliano, Vignaud, Dominique, Happy, Henri, Cortadella, Ramon Garcia, Schaefer, Nathan, Calia, Andrea Bonaccini, Garrido, Jose Antonio, and Jimenez, David

Subjects
Physics - Applied Physics
Abstract

In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. Drain current and LFN of two short channel back-gated GFETs (L=300, 100 nm) were measured at lower and higher drain voltages, for a wide range of gate voltages covering the region away from charge neutrality point (CNP) up to CNP at p-type operation region. Current-voltage (IV) and LFN data were also available from a long channel SL top solution-gated (SG) GFET (L=5 um), for both p- and n-type regions near and away CNP. At each of these regimes, the appropriate IV and LFN parameters can be accurately extracted. Regarding LFN, mobility fluctuation effect is dominant at CNP and from there the Hooge parameter aH can be extracted while the carrier number fluctuation contribution which is responsible for the well-known M-shape bias dependence of output noise divided by squared drain current, also observed in our data, makes possible the extraction of the NT parameter related to the number of traps. In the less possible case of a Lambda-shape trend, NT and aH can be extracted simultaneously from the region near CNP. Away from CNP, contact resistance can have a significant contribution to LFN and from there the relevant parameter SDR^2 is defined. The LFN parameters described above can be estimated from the low drain voltage region of operation where the effect of Velocity Saturation (VS) mechanism is negligible. VS effect results in the reduction of LFN at higher drain voltages and from there the IV parameter hOmega which represents the phonon energy and is related to VS effect can be derived both from drain current and LFN data.

Published
2020
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6. Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer

Author

Salk, Soukaina Ben, Pandey, Reetu Raj, Pham, Phi HQ, Zhou, Di, Wei, Wei, Cochez, Guillaume, Vignaud, Dominique, Pallecchi, Emiliano, Burke, Peter J, and Happy, Henri

Subjects
Engineering, Materials Engineering, Nanotechnology, monocrystalline graphene, electrochemical delamination, bubble-free transfer, Raman spectroscopy, defect-free, electrical characterization, Materials engineering
Abstract

In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene.

Published
2021

7. Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs

Author

Mavredakis, Nikolaos, Wei, Wei, Pallecchi, Emiliano, Vignaud, Dominique, Happy, Henri, Cortadella, Ramon Garcia, Calia, Andrea Bonaccini, Garrido, Jose A., and Jiménez, David

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential so it gets maximized as the drain voltage increases and the transistor length shrinks. Under these conditions though, short channel effects like Velocity Saturation (VS) should be taken into account. Carrier number and mobility fluctuations have been proved to be the main sources that generate LFN in graphene devices. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. At low electric field operation, VS effect is negligible since carriers velocity is far away from being saturated. Under these conditions, LFN can be precicely predicted by a recently established physics-based analytical model. The present paper goes a step furher and proposes a new model which deals with the contribution of VS effect on LFN under high electric field conditions. The implemented model is validated with novel experimental data, published for the first time, from CVD grown back-gated single layer graphene transistors operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near charge neutrality point because of the effect of VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at higher gate voltages and is accurately described by the proposed model., Comment: Main Manuscript:10 pages, 6 figures

Published
2019
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8. Optoelectronic mixing with high frequency graphene transistors

Author

Montanaro, Alberto, Wei, Wei, De Fazio, Domenico, Sassi, Ugo, Soavi, Giancarlo, Ferrari, Andrea C, Happy, Henri, Legagneux, Pierre, and Pallecchi, Emiliano

Subjects
Physics - Applied Physics
Abstract

Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.

Published
2019

10. Record high bandwidth integrated graphene photodetectors for communication beyond 180 Gb/s

Author

Schall, Daniel, Pallecchi, Emiliano, Ducournau, Guillaume, Avramovic, Vanessa, Otto, Martin, and Neumaier, Daniel

Subjects
Physics - Applied Physics
Abstract

We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods., Comment: 3 pages, 2 figures

Published
2018

11. Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances

Author

Pasadas, Francisco, Wei, Wei, Pallecchi, Emiliano, Happy, Henri, and Jiménez, David

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain/source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional field-effect transistors., Comment: 8 pages, 10 figures, 4 tables

Published
2017
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13. Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC.

Author

Fadil, Dalal, Strupinski, Wlodek, Pallecchi, Emiliano, and Happy, Henri

Subjects
FIELD-effect transistors, CHEMICAL vapor deposition, RAMAN microscopy, ATOMIC force microscopy, RAMAN spectroscopy
Abstract

Epitaxial bilayer graphene, grown by chemical vapor deposition on SiC substrates without silicon sublimation, is crucial material for graphene field effect transistors (GFETs). Rigorous characterization methods, such as atomic force microscopy and Raman spectroscopy, confirm the exceptional quality of this graphene. Post-nanofabrication, extensive evaluation of DC and high-frequency properties enable the extraction of critical parameters such as the current gain (fmax) and cut-off frequency (ft) of hundred transistors. The Raman spectra analysis provides insights into material property, which correlate with Hall mobilities, carrier densities, contact resistance and sheet resistance and highlights graphene's intrinsic properties. The GFETs' performance displays dispersion, as confirmed through the characterization of multiple transistors. Since the Raman analysis shows relatively homogeneous surface, the variation in Hall mobility, carrier densities and contact resistance cross the wafer suggest that the dispersion of GFET transistor's performance could be related to the process of fabrication. Such insights are especially critical in integrated circuits, where consistent transistor performance is vital due to the presence of circuit elements like inductance, capacitance and coplanar waveguides often distributed across the same wafer. [ABSTRACT FROM AUTHOR]

Published
2024
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15. Disorder-perturbed Landau levels in high electron mobility epitaxial graphene

Author

Maëro, Simon, Torche, Abderrezak, Phuphachong, Thanyanan, Pallecchi, Emiliano, Ouerghi, Abdelkarim, Ferreira, Robson, de Vaulchier, Louis-Anne, and Guldner, Yves

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies of the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments.

Published
2014
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18. Carbon Nanotube Quantum Dots with Nb Contacts

Author

Pallecchi, Emiliano, Gaass, Markus, Ryndyk, Dmitry, and Strunk, Christoph

Subjects
Condensed Matter - Superconductivity
Abstract

We report on the preparation of carbon nanotube quantum dots using superconducting electrodes made of niobium. Gate-controllable supercurrents with values of up to 30 nA are induced by the proximity effect. The IV-curves are hysteretic at low temperature and the corresponding switching histograms have a width of ~0.5-2. An on-chip resistive environment integrated in the sample layout is used in order to increase the switching current., Comment: 7 pages, 3 figures

Published
2008
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23. Towards 500 GHz Non-volatile Monolayer 6G Switches

Author

Kim, Myungsoo, Ducournau, Guillaume, Skrzypczak, Simon, Szriftgiser, P., Yang, Sung Jin, Wainstein, Nicolas, Stern, Keren, Happy, Henri, Yalon, Eilam, Pallecchi, Emiliano, Akinwande, Deji, Ulsan National Institute of Science and Technology (UNIST), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Carbon - IEMN (CARBON - IEMN), Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), The University of Texas at Austin, Technion - Israel Institute of Technology [Haifa], This work was supported in part by the U-K Brand Research Fund (1.220028.01) of UNIST and an ONR grant N00014-20-1-2104. Datacom measurements is supported bythe DYDICO cluster of the I-Site ULNE, the IEMN ‘Telecom UHD’ Flagship and the CPER ‘Photonics for society’. 300 GHz transmitter and receiver chains were established with thesupport of ANR TERASONIC, SPATIOTERA and the TERIL-WAVES projects. This work was partially supported by ANR grant ANR-19-CE24-000, PCMP CHOP, ANR-19-CE24-0004,SWIT,SWItches à base de dichalcogénures de métaux de transition pour des applications RF(2019), ANR-17-CE24-0044,TERASONIC,Transmissions TERAhertz combinant électronique état SOlide et photoNIQue(2017), and ANR-19-CE24-0012,SPATIOTERA,Multiplexage SPATIal en gamme térahertz pour les cOmmunications sans fil à 1 TERAbit/s(2019)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; High performance non-volatile analog switches based on monolayer MoS₂ are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS₂ enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS₂ switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10× higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.

Published
2022

24. Commutateur RF fabriqué à partir de matériau 2D

Author

Skrzypczak, S., Kim, Myungsoo, Ducournau, Guillaume, Vignaud, Dominique, Gassilloud, Remy, A., Cresti, David-Vifflantzeff, J., Deblock, Yves, Hadid, Jawad, Okada, Etienne, Avramovic, Vanessa, Happy, Henri, Akinwande, Deji, Pallecchi, Emiliano, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Carbon - IEMN (CARBON - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), The University of Texas at Austin, Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Je remercie le personnel de la caractérisation et de la salle blanche de IEMN pour leur aide dans ce travail. Ce travail a pu être réalisé grâce au réseau RENATECH, et a bénéficié du soutien de l’ANR-2019-SWIT., Renatech Network, CMNF, PCMP CHOP, and ANR-19-CE24-0004,SWIT,SWItches à base de dichalcogénures de métaux de transition pour des applications RF(2019)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

National audience; Les commutateurs RF sont utilisés dans les modules de communication sans fils (transmetteurs) et dans les systèmes où la reconfiguration est nécessaire. Ce travail présente des commutateurs RF à base de matériau 2D (MoS2 et hBN) avec des accès coplanaires optimisés et compatibles avec des pointes de mesures radiofréquences, d’espacement de 50/100µm. Les dispositifs ont été caractérisés en DC et dans la bande 0.25-67GHz. Les commutateurs sont non-volatiles et possèdent un ratio ON/OFF de 29dB @ 50GHz

Published
2022

26. Master Nanosciences Nanotechnologies de l’Université de Lille: une formation aux technologies émergentes

Author

Bollaert, Sylvain, Pallecchi, Emiliano, Gaillot, Davy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Carbon - IEMN (CARBON - IEMN), Télécommunication, Interférences et Compatibilité Electromagnétique - IEMN (TELICE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Carbon - IEMN (CARBON-IEMN)

Subjects
stomatognathic diseases, [SPI]Engineering Sciences [physics]
Abstract

oral; National audience

Published
2021

27. Non-linearity of RF switch based on 2D materials

Author

Skrzypczak, S., Myungsoo, K., Ducournau, Guillaume, Vignaud, Dominique, Gassilloud, R., Cresti, A., David-Vifflantzeff, J., Deblock, Yves, Hadid, J., Avramovic, Vanessa, Happy, Henri, Akinwande, D., Pallecchi, Emiliano, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Carbon - IEMN (CARBON - IEMN), PCMP CHOP, and Renatech Network

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2021

32. Physical and electrical characterization of bubble free transferred single crystal graphene

Author

Pandey, Reetu Raj, Salk, Soukaina, Pandey, Reetu, Pham, Phi, Zhou, Di, Vignaud, Dominique, Pallecchi, Emiliano, Burke, Peter, Happy, Henri, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), University of Lille, University of California [Irvine] (UCI), University of California, Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), University of California [Irvine] (UC Irvine), University of California (UC), and Carbon - IEMN (CARBON - IEMN)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics], electrical characterization, Raman spectroscopy, bubble-free transfer, [CHIM]Chemical Sciences, defect-free, [NLIN]Nonlinear Sciences [physics], monocrystalline graphene, electrochemical delamination
Abstract

Monocrystalline graphene is desirable for practical applications since the large-scale polycrystalline graphene grown by chemical vapor deposition is limited in terms of performance. The transfer of graphene film from the metallic growth substrate to a host substrate, which is generally required for practical applications, can further damage the graphene by inducing strain, defects and wrinkles or by leaving contamination such as polymer residues. In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of copper oxidation on graphene prior to the transfer is also discussed. Our results show that the "Bubble-free" electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene with an almost defect free surface. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modify the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is submitted to a biaxial strain in compression, while graphene on Cu oxide is submitted to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects disappeared leaving a homogeneous graphene on the substrate. Finally, we used the transferred single crystal graphene on silicon oxide substrate to fabricate transmission line method (TLM) devices. These electrical measurements show low contact resistance ~150 Ω.µm, which confirms the homogeneity and good quality of transferred graphene. Therefore, electrochemical delamination process can be used to transfer large single crystal graphene in a fast and reliable way.

Published
2020

33. Graphene field-effect transistors with velocity saturation

Author

MELE, David, WILMART, Q., Boukhicha, M., Graef, H., Fruleux, D., Schmitt, A., Palomo, J., Rosticher, M., Taniguchi, T., Watanabe, K., Bouchiat, V., BAUDIN, E., Berroir, J.M., Feve, G., BOCQUILLON, E., Pallecchi, Emiliano, Placais, B., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon - IEMN (CARBON - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), flagship graphene, Renatech Network, European Project: 785219,H2020,GrapheneCore2(2018), European Project: 881603,H2020,H2020-SGA-FET-GRAPHENE-2019, GrapheneCore3(2020), and Carbon-IEMN (CARBON-IEMN)

Subjects
[SPI]Engineering Sciences [physics], ComputingMethodologies_GENERAL, ComputingMilieux_MISCELLANEOUS
Abstract

poster; National audience

Published
2020

34. Graphene for radio frequency electronics

Author

Wei, Wei, Dalal, Fadil, Fregonese, Sebastien, Strupinski, Wlodek, Pallecchi, Emiliano, Happy, Henri, Laboratoire d'ingénierie pour les systèmes complexes (UR LISC), Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Warsaw University of Technology [Warsaw], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Renatech Network, European Project: 785219, Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Carbon - IEMN (CARBON - IEMN), and European Project: 785219,H2020,GrapheneCore2(2018)

Subjects
Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

oral; International audience; In the framework of the European project Flagship Graphene, we have developed several process technologies, for fabricating graphene field-effect transistors, for radio frequency (RF) applications. Depending on the technique used to synthesize graphene, different transistors topologies were designed, given rise to different applications. Graphene materials under consideration include graphene growth on silicon carbide, graphene growth by chemical vapor deposition (CVD) on copper foil. After fabrication of transistors on rigid and on flexible substrates, high frequency characterization of devices is made. Based on the performance of transistors, RF circuits where designed and fabricated.

Published
2020

40. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

Author

Wilmart, Quentin, primary, Boukhicha, Mohamed, additional, Graef, Holger, additional, Mele, David, additional, Palomo, Jose, additional, Rosticher, Michael, additional, Taniguchi, Takashi, additional, Watanabe, Kenji, additional, Bouchiat, Vincent, additional, Baudin, Emmanuel, additional, Berroir, Jean-Marc, additional, Bocquillon, Erwann, additional, Fève, Gwendal, additional, Pallecchi, Emiliano, additional, and Plaçais, Bernard, additional

Published
2020
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42. Velocity saturation effect on low frequency noise in short channel single layer graphene field effect transistors

Author

European Commission, Ministerio de Economía y Competitividad (España), Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España), Mavredakis, Nikolaos, Wei, Wei, Pallecchi, Emiliano, Vignaud, Dominique, Happy, Henry, Garcia Cortadella, Ramon, Bonaccini Calia, Andrea, Garrido, Jose A., Jiménez, David, European Commission, Ministerio de Economía y Competitividad (España), Ministerio de Ciencia, Innovación y Universidades (España), Agencia Estatal de Investigación (España), Mavredakis, Nikolaos, Wei, Wei, Pallecchi, Emiliano, Vignaud, Dominique, Happy, Henry, Garcia Cortadella, Ramon, Bonaccini Calia, Andrea, Garrido, Jose A., and Jiménez, David

Abstract

Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential, so it gets maximized as the drain voltage increases and the transistor's length shrinks. Under these conditions though, short channel effects like velocity saturation (VS) should be considered. The reduction of LFN data due to the VS effect at short channel GFETs operating at high drain potential is for the first time shown in the present work. Carrier number and mobility fluctuations have been proven to be the main sources that generate LFN in GFETs. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. In this paper we have proposed a physics-based analytical LFN model that works under both low and high electric field conditions. The implemented model is validated with experimental data from CVD grown back-gated single layer GFETs operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near the charge neutrality point because of the effect of the VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at high gate voltages and is accurately described by the proposed model. The noise parameter related to LFN at contacts is found to have an exponential dependence with contact resistance, and to our knowledge, this is shown for the first time.

Published
2019

45. Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering nonreciprocal capacitances

Author

Pasadas, Francisco, Wei, Wei, Pallecchi, Emiliano, Happy, Henri, Jim��nez, David, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Carbon-IEMN (CARBON-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Instituto Ramon y Cajal de Investigacion Sanitaria [Madrid, Spain] (IRYCIS), Universidad de Alcalá - University of Alcalá (UAH), European UnionEuropean Commission [604391], European Union's through the Horizon 2020 Research and Innovation Program [696656], and Ministerio de Economia y CompetitividadSpanish Government [TEC2012-31330, TEC2015-67462-C2-1-R]

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, 2d materials, s-parameters, FOS: Physical sciences, small-signal, fet, Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, charge conservation, [SPI]Engineering Sciences [physics], Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Hardware_INTEGRATEDCIRCUITS, radio-frequency (rf) figures of merit (foms), monolithic microwave integrated circuit (mmic)
Abstract

A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain/source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional field-effect transistors., 8 pages, 10 figures, 4 tables

Published
2017

46. Matériaux 2D

Author

Bournel, Arnaud, Cresti, Alessandro, Pallecchi, Emiliano, Varani, Luca, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and OMNT

Subjects
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Nanoélectronique; International audience

Published
2017

48. Fabrication of new transparent MEAs made from pure PEDOT:PSS and their optical/electrical properties for neurons' activity assessment in the frame of Alzheimer disease case study

Author

Susloparova, Anna, primary, Coffinier, Yannick, additional, Alibart, Fabien, additional, Thomy, Vincent, additional, Arscott, Steve, additional, Pallecchi, Emiliano, additional, Begard, Séverine, additional, Halliez, Sophie, additional, Colin, Morvane, additional, and Buée, Luc, additional

Published
2018
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50. Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications

Author

Wei, Wei, Deokar, Geetanjali, Belhaj, Mohamed Moez, Mele, D., Pallecchi, Emiliano, Pichonat, Emmanuelle, Vignaud, Dominique, Happy, Henri, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; To synthesize monolayer graphene and realize defect free transfer for electronic devices application are still challenges. In this letter, we present the fabrication and characterization of graphene field effect transistor (GFET), with respect to key parameters of graphene growth on Cu by chemical vapor deposition (CVD) and an optimized transfer process. Scanning electron microscopy, Raman spectroscopy and Hall effect measurement were used for characterizing graphene quality. It was found that monolayer graphene with a low defect density and hole mobility up to 3180cm2/Vs at n=1.3 10^12 cm-2, could be obtained. For device characterization, We report an intrinsic current gain cut-off frequency (ft) of 15.5 GHz and maximum oscillation frequency of 12 GHz, deduced from the S-parameters measurements for device with gate length of 100 nm. This study demonstrate the potential of CVD-grown graphene for high speed electronics in combination with a technological process compatible with arbitrary substrates.

Published
2014

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