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259 results on '"PARK, H.-H."'

3. Static Worst-Case Execution Time Analysis Tool for Embedded Operating Systems

Author

Park, H. H., Hong, JiMan, Yang, S. M., Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Doug, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Gervasi, Osvaldo, editor, Murgante, Beniamino, editor, Laganà, Antonio, editor, Taniar, David, editor, Mun, Youngsong, editor, and Gavrilova, Marina L., editor

Published
2008
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8. Statistical noise analysis of CMOS image sensors in dark condition

Author

Woo, J.-M., Park, H.-H., Hong, S.-M., Chung, I.-Y., Min, H. S., and Park, Y. J.

Subjects
Complementary metal oxide semiconductors -- Usage, Computer-aided design -- Usage, Potential theory (Mathematics) -- Usage, Business, Electronics, Electronics and electrical industries
Published
2009

20. Magnetic resonant wireless power transfer for propulsion of implantable micro-robot.

Author

Kim, D., Kim, M., Yoo, J., Park, H.-H., and Ahn, S.

Subjects
MAGNETIC resonance, INDUSTRIAL applications, PROPULSION systems, ROBOTS, WIRELESS power transmission
Abstract

Recently, various types of mobile micro-robots have been proposed for medical and industrial applications. Especially in medical applications, a motor system for propulsion cannot easily be used in a micro-robot due to their small size. Therefore, micro-robots are usually actuated by controlling the magnitude and direction of an external magnetic field. However, for micro-robots, these methods in general are only applicable for moving and drilling operations, but not for the undertaking of various missions. In this paper, we propose a new micro-robot concept, which uses wireless power transfer to deliver the propulsion force and electric power simultaneously. The mechanism of Lorentz force generation and the coil design methodologies are explained, and validation of the proposed propulsion system for a micro-robot is discussed thorough a simulation and with actual measurements with up-scaled test vehicles. [ABSTRACT FROM AUTHOR]

Published
2015
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25. Impurity diffusion enhancement of interdiffusion in an InGaPAs-GaAs heterostructure.

Author

Lee, K. H., Park, H.-H., and Stevenson, D. A.

Subjects
*DIFFUSION, *ZINC, *SILICON, *CATIONS, *ANIONS
Abstract

Examines the influence of concurrent diffusion of zinc and silicon on the interdiffusion on the cation and anion sublattices in In[subx]Ga[1-x]P[1-y]GaAs heterostructures. Explanations for impurity diffusion enhancement of interdiffusion; Growth of the liquid phase epitaxy layers used for the diffusion study.

Published
1989
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26. The hydridation and nitridation of GeSi oxide annealed in ammonia.

Author

Liu, W. S., Nicolet, M.-A., Park, H.-H., Koak, B.-H., and Lee, J.-W.

Subjects
GERMANIUM compounds, SILICON compounds, THIN films, ELECTRON spectroscopy
Abstract

Presents a study that analyzed a germanium (Ge)-silicon (Si)-oxygen film on GeSi, annealed in nitrogen-hydrogen by using Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy and secondary-ion mass spectrometry. Importance of silicon dioxide and nitride materials in Si technology; Information on the Auger electron depth profile of a GeSiO layer on GeSi annealed in ammonia.

Published
1995
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29. A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7 Ca0.3 MnO3

Author

Lee, H.S., Choi, S.G., Park, H.-H., and Rozenberg, M.J.

Abstract

Resistive random access memory based on the resistive switching phenomenon is emerging as a strong candidate for next generation non-volatile memory. So far, the resistive switching effect has been observed in many transition metal oxides, including strongly correlated ones, such as, cuprate superconductors, colossal magnetoresistant manganites and Mott insulators. However, up to now, no clear evidence of the possible relevance of strong correlation effects in the mechanism of resistive switching has been reported. Here, we study Pr 0.7 Ca0.3 MnO3, which shows bipolar resistive switching. Performing micro-spectroscopic studies on its bare surface we are able to track the systematic electronic structure changes in both, the low and high resistance state. We find that a large change in the electronic conductance is due to field-induced oxygen vacancies, which drives a Mott metal-insulator transition at the surface. Our study demonstrates that strong correlation effects may be incorporated to the realm of the emerging oxide electronics. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.

Published
2013

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