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The hydridation and nitridation of GeSi oxide annealed in ammonia.
- Source :
- Journal of Applied Physics; 8/15/1995, Vol. 78 Issue 4, p2631, 4p
- Publication Year :
- 1995
-
Abstract
- Presents a study that analyzed a germanium (Ge)-silicon (Si)-oxygen film on GeSi, annealed in nitrogen-hydrogen by using Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy and secondary-ion mass spectrometry. Importance of silicon dioxide and nitride materials in Si technology; Information on the Auger electron depth profile of a GeSiO layer on GeSi annealed in ammonia.
- Subjects :
- GERMANIUM compounds
SILICON compounds
THIN films
ELECTRON spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 78
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7661692
- Full Text :
- https://doi.org/10.1063/1.360123