1. A singlet-triplet hole-spin qubit in MOS silicon
- Author
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S. D. Liles, D. J. Halverson, Z. Wang, A. Shamim, R. S. Eggli, I. K. Jin, J. Hillier, K. Kumar, I. Vorreiter, M. J. Rendell, J. Y. Huang, C. C. Escott, F. E. Hudson, W. H. Lim, D. Culcer, A. S. Dzurak, and A. R. Hamilton
- Subjects
Science - Abstract
Abstract Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimise spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We demonstrate rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 μs using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.
- Published
- 2024
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