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24 results on '"Oota, Masashi"'

3. Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm

Author

Kunitake, Hitoshi, primary, Tsuda, Kazuki, additional, Saito, Satoru, additional, Okuno, Naoki, additional, Takahashi, Masahiro, additional, Oota, Masashi, additional, Hamada, Toshiki, additional, Asami, Yoshinobu, additional, Sawai, Hiromi, additional, Kurata, Motomu, additional, Endo, Toshiya, additional, Sugaya, Kentaro, additional, Nakano, Masaru, additional, Hodo, Ryota, additional, Sasagawa, Shinya, additional, Ono, Toshikazu, additional, Murakawa, Tsutomu, additional, Wakuda, Masahiro, additional, and Yamazaki, Shunpei, additional

Published
2022
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5. 3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm

Author

Oota, Masashi, primary, Hodo, Ryota, additional, Ikeda, Takayuki, additional, Yamazaki, Shunpei, additional, Ando, Yoshinori, additional, Tsuda, Kazuki, additional, Koshida, Tatsuki, additional, Oshita, Satoru, additional, Suzuki, Akio, additional, Fukushima, Kunihiro, additional, Nagatsuka, Shuhei, additional, and Onuki, Tatsuya, additional

Published
2019
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6. Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

Author

Yamazaki, Shunpei, primary, Ohshita, Satoru, additional, Oota, Masashi, additional, Baba, Haruyuki, additional, Onuki, Tatsuya, additional, Kunitake, Hitoshi, additional, Ohshima, Kazuaki, additional, Shimada, Daigo, additional, Kimura, Hajime, additional, Murakawa, Tsutomu, additional, Atsumi, Tomoaki, additional, and Kato, Kiyoshi, additional

Published
2019
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13. Origin of major donor states in In–Ga–Zn oxide

Author

Nakashima, Motoki, primary, Oota, Masashi, additional, Ishihara, Noritaka, additional, Nonaka, Yusuke, additional, Hirohashi, Takuya, additional, Takahashi, Masahiro, additional, Yamazaki, Shunpei, additional, Obonai, Toshimitsu, additional, Hosaka, Yasuharu, additional, and Koezuka, Junichi, additional

Published
2014
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14. P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

Author

Oota, Masashi, primary, Ishihara, Noritaka, additional, Nakashima, Motoki, additional, Kurosawa, Yoichi, additional, Hirohashi, Takuya, additional, Takahashi, Masahiro, additional, Yamazaki, Shunpei, additional, Obonai, Toshimitsu, additional, Hosaka, Yasuharu, additional, Koezuka, Junichi, additional, Kanzaki, Yohsuke, additional, Matsukizono, Hiroshi, additional, Kaneko, Seiji, additional, and Matsuo, Takuya, additional

Published
2014
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15. Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

Author

Nonaka, Yusuke, primary, Kurosawa, Yoichi, additional, Komatsu, Yoshihiro, additional, Ishihara, Noritaka, additional, Oota, Masashi, additional, Nakashima, Motoki, additional, Hirohashi, Takuya, additional, Takahashi, Masahiro, additional, Yamazaki, Shunpei, additional, Obonai, Toshimitsu, additional, Hosaka, Yasuharu, additional, Koezuka, Junichi, additional, and Yamauchi, Jun, additional

Published
2014
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16. A 513-ppi FFS-mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode

Author

Yamashita, Akio, primary, Toyotaka, Kouhei, additional, Oota, Masashi, additional, Kubota, Daisuke, additional, Miyake, Hiroyuki, additional, Hirakata, Yoshiharu, additional, Yamazaki, Shunpei, additional, Katayama, Masahiro, additional, Okazaki, Kenichi, additional, Koezuka, Junichi, additional, Matsukizono, Hiroshi, additional, Kanzaki, Yohsuke, additional, Kaneko, Seiji, additional, Ueda, Naoki, additional, Oda, Akihiro, additional, Mori, Shigeyasu, additional, and Matsuo, Takuya, additional

Published
2014
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18. Crystallography of In-Ga-Zn-O thin film having CAAC structure.

Author

Ohgarane, Daisuke, Konishi, Michiko, Dairiki, Koji, Oota, Masashi, Hirohashi, Takuya, Takahashi, Masahiro, Tsubuku, Masashi, Yamazaki, Shunpei, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Mori, Shigeyasu, and Matsuo, Takuya

Published
2013

21. Morphological and Electrical Difference in C-axis Aligned Crystalline IGZO Films Based on the Sputtering Method.

Author

Kawata, Takuya, Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Takasu, Takako, Kurosawa, Yoichi, Dairiki, Koji, Tsubuku, Masashi, and Yamazaki, Shunpei

Subjects
INDIUM gallium zinc oxide, ELECTRIC properties of metals, OXIDE coating
Abstract

We investigated In-Ga-Zn oxide films deposited by two types of sputtering methods: planar magnetron and facing-target. In crystallinity, we found that silicon diffused from SiOx prevents crystallization regardless of the sputtering method. In electrical property, we found that mobility of films deposited by facing-target sputtering less depends on carrier concentration. [ABSTRACT FROM AUTHOR]

Published
2016
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22. Preparation of new polysulfones with –O–(CH2)3–SO3H side chains.

Author

Kojima, Takahiro, Koizumi, Take-aki, Sei, Yoshihisa, Shiozaki, Shiho, Abe, Masahiro, Oota, Masashi, Kishi, Katsuyuki, Naoi, Katsuyoshi, and Yamamoto, Takakazu

Subjects
*SULFONES, *SUBSTITUENTS (Chemistry), *POLYCONDENSATION, *CROSSLINKING (Polymerization), *POLYMER films, *PROTON conductivity
Abstract

Highlights: [•] Polysulfones with –O(CH2)3SO3H side chains were synthesized. [•] Ni- and Pd-promoted polycondensation gave the polymers. [•] Crosslinking of the polymer with 1,4-benzenedimethanol. [•] The cross-linked polymer film showed proton conductivity of 0.26Scm−1. [ABSTRACT FROM AUTHOR]

Published
2014
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23. Preparation of poly(2-pyridone-3,5-diyl)s with –(CH2)4–SO3M (M = H or Na) side chains

Author

Yamamoto, Takakazu, Takei, Tohru, Kumagai, Naoto, Harada, Yosuke, Ohki, Takumi, Kudoh, Yasuo, Kojima, Takahiro, Koizumi, Take-aki, Shiramizu, Kohei, Abe, Masahiro, and Oota, Masashi

Subjects
*PYRIDONE, *CHEMICAL sample preparation, *POLYVINYL alcohol, *PROTONS, *POLYCONDENSATION, *DEHALOGENATION, *OXIDATION
Abstract

Abstract: Poly(2-pyridone-3,5-diyl)s with –(CH2)4–SO3M (M = H or Na) side chains have been prepared by nickel-complex promoted dehalogenative polycondensation. A composite film of the polymer with –(CH2)4–SO3H side chains and poly(vinyl alcohol) showed a proton conductivity of 1.5 × 10−1 S cm−1 at 80 °C and 95% humidity. A copolymer with pyridine showed a high stability against oxidation by a Fenton reagent. [Copyright &y& Elsevier]

Published
2012
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24. Preparation of dibromopyridines having –(CH2)m–SO3Na groups as monomers for new polypyridines

Author

Takei, Tohru, Ohki, Takumi, Harada, Yosuke, Kumagai, Naoto, Fukumoto, Hiroki, Koizumi, Take-aki, Maeda, Akihiro, Kojima, Takahiro, Sei, Yoshihisa, Shiramizu, Kohei, Abe, Masahiro, Oota, Masashi, and Yamamoto, Takakazu

Subjects
*PYRIDINE, *POLYPYRIDINES, *CHEMICAL reactions, *POLYMERS, *ORGANOMETALLIC chemistry, *POLYCONDENSATION, *CHEMICAL stability
Abstract

Abstract: Dibromopyridines or dibromopyridone with –(CH2)m–SO3Na group(s) has been prepared via the reactions of the corresponding dibromopyridines with –OH and –NH2 groups with sultone. These compounds were converted into polymers with the –(CH2)m–SO3H groups via organometallic polycondensation. The polymer showed proton conducting properties and high stability toward oxidation. [Copyright &y& Elsevier]

Published
2012
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