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The semiconductor/insulator blends for organic field-effect transistors are a potential solution to improve the charge transport in the active layer by inducing phase separation in the blends. However, the technique is less investigated for long-chain conducting polymers such as Poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPPDTT), and lateral phase separation is generally reported due to the instability during solvent evaporation, which results in degraded device performance. Herein, we report how to tailor the dominant mechanism of phase separation in such blends and the molecular assembly of the polymer. For DPPDTT/PMMA blends, we found that for higher DPPDTT concentrations (more than 75%) where the vertical phase separation mechanism is dominant, PMMA assisted in the self-assembly of DPPDTT to form nanowires and micro-transport channels on top of PMMA. The formation of nanowires yielded 13 times higher mobility as compared to pristine devices. For blend ratios with DPPDTT ≤ 50%, both the competing mechanisms, vertical and lateral phase separation, are taking place. It resulted in somewhat lower charge carrier mobilities. Hence, our results show that by systematic tuning of the blend ratio, PMMA can act as an excellent binding material in long-chain polymers such as DPPDTT and produce vertically stratified and aligned structures to ensure high mobility devices. [ABSTRACT FROM AUTHOR]

The delafossite semiconductor CuInO 2 has shown great potential in transparent electronics for its bipolar dopability. However, little is known about the limiting factors about its carrier mobility, which impedes its further development. Applying a b i n i t i o Boltzmann transport formalism, here we calculate the intrinsic, phonon-limited carrier mobility of CuInO 2 and study its carrier–phonon coupling mechanisms. The calculated room-temperature electron and hole mobilities along the in-plane direction are μ e = 97.6 cm 2 V − 1 s − 1 and μ h = 1.4 cm 2 V − 1 s − 1 , respectively. We find that the electron mobility is limited by the combination of acoustic phonons and polar longitudinal optical (LO) phonons, while the hole mobility is mainly limited by carrier–acoustic phonon scattering. We further show that the electron effective mass and bandgap of CuInO 2 can be tuned through strain engineering for improved carrier transport properties. Our work uncovers the underlying factors that govern the intrinsic carrier mobility of the transparent bipolar semiconductor CuInO 2 and sheds light on the design and exploration of bipolar conducting transparent conductive oxides (TCOs) based on delafossite semiconductors. [ABSTRACT FROM AUTHOR]

The delafossite semiconductor CuInO 2 has shown great potential in transparent electronics for its bipolar dopability. However, little is known about the limiting factors about its carrier mobility, which impedes its further development. Applying a b i n i t i o Boltzmann transport formalism, here we calculate the intrinsic, phonon-limited carrier mobility of CuInO 2 and study its carrier–phonon coupling mechanisms. The calculated room-temperature electron and hole mobilities along the in-plane direction are μ e = 97.6 cm 2 V − 1 s − 1 and μ h = 1.4 cm 2 V − 1 s − 1 , respectively. We find that the electron mobility is limited by the combination of acoustic phonons and polar longitudinal optical (LO) phonons, while the hole mobility is mainly limited by carrier–acoustic phonon scattering. We further show that the electron effective mass and bandgap of CuInO 2 can be tuned through strain engineering for improved carrier transport properties. Our work uncovers the underlying factors that govern the intrinsic carrier mobility of the transparent bipolar semiconductor CuInO 2 and sheds light on the design and exploration of bipolar conducting transparent conductive oxides (TCOs) based on delafossite semiconductors. [ABSTRACT FROM AUTHOR]

Designing organic semiconductors for practical applications in organic solar cells, organic field-effect transistors, and organic light-emitting diodes requires understanding charge transfer mechanisms across different length and time scales. The underlying electron transfer mechanisms can be efficiently explored using semiempirical quantum mechanical (SQM) methods. The dimer projection (DIPRO) method combined with the recently introduced non-self-consistent density matrix tight-binding potential (PTB) [Grimme et al., J. Chem. Phys. 158, 124111 (2023)] is used in this study to evaluate charge transfer integrals important for understanding charge transport mechanisms. PTB, parameterized for the entire Periodic Table up to Z = 86, incorporates approximate non-local exchange, allowing for efficient and accurate calculations for large hetero-organic compounds. Benchmarking against established databases, such as Blumberger's HAB sets, or our newly introduced JAB69 set and comparing with high-level reference data from ωB97X-D4 calculations confirm that DIPRO@PTB consistently performs well among the tested SQM approaches for calculating coupling integrals. DIPRO@PTB yields reasonably accurate results at low computational cost, making it suitable for screening purposes and applications to large systems, such as metal-organic frameworks and cyanine-based molecular aggregates further discussed in this work. [ABSTRACT FROM AUTHOR]

Using Bayesian spectroscopy, we performed spectral decomposition of gate modulation (GM) spectra measured in a pentacene organic field-effect transistor to understand comprehensively the optical nonlinear response due to GM and hole injection. Although GM spectra contain a variety of spectral components, by Bayesian spectroscopy, we can specify the role of each component in the nonlinear response by performing model selection that chooses the spectral components needed to explain the data without preconceptions. For a GM spectrum under positive GM, Bayesian spectroscopy shows that nonlinear responses by the change in polarizability dominate the GM spectrum among several types of Stark signals induced by the GM electric field, which is a physically valid conclusion. For GM spectra under negative GM where gate-induced carriers are injected, Bayesian spectroscopy succeeds in completely elucidating the spectral structure, which is composed of the two types of Stark signals due to changes in the polarizability and the dipole moment, bleaching, and gate-induced absorption signals. A pentacene film is known to have solid and isolated molecular phases, which may give different spectral responses. Therefore, we compared a model that treats these responses equally and a model that distinguishes them. Bayesian spectroscopy selects the latter models for all GM spectra, revealing statistically that nonlinear optical effects and hole injection effects are different in these phases. [ABSTRACT FROM AUTHOR]

The development of complementary metal-oxide-semiconductor field-effect transistor (CMOSFET) based on two-dimensional (2D) materials offers an important opportunity to reduce static power and increase the integration density of integrated circuits. One promising approach to realize these CMOSFETs is to employ ambipolar 2D materials as channel materials with designed device structure to control the carrier transport properties for CMOSFET characteristics. However, these devices always suffer from complex multi-gate electrode structure, and hence face challenges in complicated inter-connection design and excessive voltage source requirement for circuit implementation. Here, we develop a three-terminal CMOSFET using ambipolar 2D material based on the drain electric field-induced carrier injection self-blocking mechanism. The designed drain electrode can effectively suppress carrier injection from the drain to the channel material, while the gate voltage can only regulate carrier injection in the source region. As a result, we can configure the device as either N-field-effect transistors (FET) or P-FET with a high current on/off ratio of over 105 by adjusting the three voltages (gate, source, and drain). Furthermore, we utilize these devices to demonstrate multifunctional wave modulator, low-static-power logic inverter (<5 pW), and combinational logic computing in the form of a compact complementary circuit. Our work would explore an efficient approach for implementing complementary circuits using 2D materials. [ABSTRACT FROM AUTHOR]

Despite recent dramatic improvements in the electronic characteristics of stretchable organic field-effect transistors (FETs), their low operational stability remains a bottleneck for their use in practical applications. Here, the operational stability, especially the bias-stress stability, of semiconducting polymer-based FETs under various tensile strains is investigated. Analyses on the structure of stretched semiconducting polymer films and spectroscopic quantification of trapped charges within them reveal the major cause of the strain-dependent bias-stress instability of the FETs. Devices with larger strains exhibit lower stability than those with smaller strains because of the increased water content, which is accompanied by the formation of cracks and nanoscale cavities in the semiconducting polymer film as results of the applied strain. The strain-dependence of bias-stress stability of stretchable OFETs can be eliminated by passivating the devices to avoid penetration of water molecules. This work provides new insights for the development of bias-stable stretchable OFETs. [ABSTRACT FROM AUTHOR]

Polyimide‐based dielectric films are widely used in various thin film devices including organic field‐effect transistors (OFETs) owing to their promising thermal/chemical stability, mechanical flexibility, and insulating properties. On the other hand, considerable attention is paid to lowering the process temperature to allow coating on plastic substrates because high‐temperature annealing (≈200 °C) is usually required to convert precursors to polyimide films with those excellent properties. In addition, polyimide‐based dielectric films have low dielectric constants (k) (<4). Therefore, modifying the k properties of polyimide is a critical issue for applications as an insulating thin film for practical transistors. This paper reports a new type of polyimide‐based gate dielectric comprising methacryloyl moiety (PI‐MA) as a side chain for photo‐pattern/processability and high‐k properties. This study shows that the photocured PI‐MA thin films show excellent insulating properties (leakage current densities < 10−8 A cm⁻2 at 4 MV cm⁻1) and high‐k properties (≈8) even without a post‐annealing process. Finally, the use of PI‐MA in printed field‐effect transistors results in high performance with low‐voltage operation (within 5 V) and integrated logic‐gate devices (NOT, NAND, and NOR gates). [ABSTRACT FROM AUTHOR]

Homopolymers and alternating copolymers of conjugated molecules exhibit impressive performance in electronic devices. Despite the well‐established procedures, the synthesis of alternating copolymers using three monomers is not as easy as random copolymers. Besides facile synthesis, the random copolymers can match the performance of alternating copolymers in electronic devices. Herein, random copolymers are designed and synthesized comprising thienoisoindigo (TIIG), diketopyrrolopyrrole (DPP), and thiophene. The DPP monomers installed with various side chains including branched alkyl chain, branched alkyl chain with ester functionality, linear oligo ethylene glycol, and siloxane terminated alkyl chain are incorporated into the polymers (P1, P2, P3, and P4, respectively). All the thermally stable, low bandgap random copolymers exhibited strong H‐type aggregation in thin film. The relationship between thin film microstructure originating from diverse side chains and the charge transport in organic field effect transistors (OFETs) is investigated. All the random copolymers exhibited predominantly p‐type charge transport and a maximum hole mobility of 2 × 10−2 cm2 V−1s−1 is observed for P3. The packing of all the polymers is examined theoretically by density functional theory (DFT) and compared with experimental values obtained from grazing incident X‐ray diffraction (GIXRD). [ABSTRACT FROM AUTHOR]

Sol–gel‐based solution‐processed metal oxides have emerged as a key fabrication method for applications in thin film transistors both as a semiconducting and a dielectric layer. Here, a low‐temperature, green solvent‐based, non‐toxic, and cost‐effective solution shearing approach for the fabrication of thin aluminum oxide (AlOx) dielectrics is reported. Optimization of sustainability aspects like energy demand, and selection of chemicals used allows to reduce the environmental impact of the life cycle of the resulting product already in the design phase. Using this approach, ultra‐thin, device‐grade AlOx films of 7 nm are coated—the thinnest films to be reported for any solution‐fabrication method. The metal oxide formation is achieved by both thermal annealing and deep ultra‐violet (UV) light exposure techniques, resulting in capacitances of 750 and 600 nF cm−2, respectively. The structural analysis using microscopy and x‐ray spectroscopy techniques confirmed the formation of smooth, ultra‐thin AlOx films. These thin films are employed in organic field‐effect transistors (OFETs) resulting in stable, low hysteresis devices leading to high mobilities (6.1 ± 0.9 cm2 V−1 s−1), near zero threshold voltage (−0.14 ± 0.07 V) and a low subthreshold swing (96 ± 16 mV dec−1), enabling device operation at only ±0.5 V with a good Ion/Ioff ratio (3.7 × 105). [ABSTRACT FROM AUTHOR]

Spermidine is an essential biomarker related to antiaging. Although the detection of spermidine levels is in high demand in life science fields, easy‐to‐use analytical tools without sample purification have not yet been fully established. Herein, we propose an organic field‐effect transistor‐based chemical sensor for quantifying the spermidine concentration in commercial cosmetics. An extended‐gate structure was employed for organic field‐effect transistor (OFET)‐based chemical sensing in aqueous media. A coordination‐bond‐based sensing system was introduced into the OFET device to visualize the spermidine detection information through changes in the transistor characteristics. The extended‐gate‐type OFET has shown quantitative responses to spermidine, which indicates sufficient detectability (i. e. the limit of detection for spermidine: 2.3 μM) considering actual concentrations in cosmetics. The applicability of the OFET‐based chemical sensor for cosmetic analysis was validated by instrumental analysis using high‐performance liquid chromatography. The estimated recovery rates for spermidine in cosmetic ingredient products (108–111 %) suggest the feasibility of cosmetic analysis based on the OFET‐based chemical sensor. [ABSTRACT FROM AUTHOR]

N‐type organic semiconductors are essential for the advancement of organic electronic devices. However, in relation to extensive research on n‐type and p‐type polymers, studies on high‐mobility n‐type small‐molecule semiconductors (SMSCs) are limited. Here, a series of ultra‐narrow bandgap n‐type SMSCs are developed on an A‐D‐A‐type structure. These SMSCs feature an exceptionally large π‐conjugated area, leading to strong intramolecular charge transfer and robust π‐π interactions. For the first time, central core and terminal halogenation are employed to control molecular surface electrostatic potential distribution, thereby regulating the π‐π stacking area (Sπ‐π) and studying their correlation. The research reveals that, in n‐type SMSCs with an edge‐on arrangement, introducing fluorine into the 2D central core can reduce the Sπ‐π, which is detrimental to the electron mobility (µe) of organic field‐effect transistors (OFETs). Conversely, terminal chlorination facilitates electron injection and improves µe. Consequently, DTPC‐OD‐4Cl, featuring shorter alkyl side chains and a non‐fluorinated 2D central core and undergoing terminal chlorination, achieved the highest µe of up to 0.52 cm2 V−1 s−1, ranking among the highest values reported for A‐D‐A type SMSCs. This work not only systematically investigated the influence of molecular structure on mobility but also provided novel insights for designing more efficient n‐type SMSCs. [ABSTRACT FROM AUTHOR]

The optoelectronic properties of semiconducting polymers and device performance rely on a delicate interplay of design and processing conditions. However, screening and optimizing the relationships between these parameters for reliably fabricating organic electronics can be an arduous task requiring significant time and resources. To overcome this challenge, Polybot is developed—a robotic platform within a self‐driving lab that can efficiently produce organic field‐effect transistors (OFETs) from various semiconducting polymers via high‐throughput blade coating deposition. Polybot not only handles the fabrication process but also can conduct characterization tests on the devices and autonomously analyze the data gathered, thus facilitating the rapid acquisition of data on a large scale. This work leverages the capabilities of this platform to investigate the fabrication of OFETs using hydrogen bonding‐containing semiconducting polymers. Through high‐throughput fabrication and characterization, various data trends are analyzed, and large extents of anisotropic charge mobility are observed in devices. The materials are thoroughly characterized to understand the role of processing conditions in solid state and electronic properties of these organic semiconductors. The findings demonstrate the effectiveness of automated fabrication and characterization platforms in uncovering novel structure–property relationships, facilitating refinement of rational chemical design, and processing conditions, ultimately leading to new semiconducting materials. [ABSTRACT FROM AUTHOR]

Calcium (Ca)-doped zinc oxide (ZnO) with 1 wt.% and 3 wt.% Ca content (CZO_1% and CZO_3%) and pure ZnO (ZO) nanoparticles (NPs) were synthesized using the sol–gel method. The X-ray diffraction (XRD) patterns and transmission electron microscopy (TEM) observations showed that calcium was incorporated in the ZnO lattice, the crystallites were nanometric in size, and the obtained NPs were prismatic in shape with sizes ranging from 40 nm to 60 nm agglomerated microspheres. Poly(3-hexylthiophene-2.5-diyl) (P3HT):ZO (PZO_50, PZO_100, and PZO_150), CZO_1% (PCZO1%_50, PCZO1%_100, and PCZO1%_150), and CZO_3% (PCZO3%_50, PCZO3%_100, and PCZO3%_150) blend thin films were prepared at a ratio from 0 mg to 150 mg. The optical characterization carried out on the P3HT:ZO, P3HT:CZO_1%, and P3HT:CZO_3% layers showed that the incorporation of pure and Ca-doped ZnO NPs had a weak influence on the chain structure and the optical gap of P3HT. The direct-bandgap energy varied with doping from 1.85 to 1.89 for ZO, 1.72 eV to 1.83 eV for PCZO_1%, and 1.69 to 1.80 for PCZO_3%. Organic field-effect transistors (OFETs) based on PZO_50, PZO_100, PZO_150, PCZO1%_50, PCZO1%_100, and PCZO1%_150, PCZO3%_50, PCZO3%_100, and PCZO3%_150 thin films used as active layers were successfully fabricated at low temperature. The electrical characterization of the nine OFETs was performed by comparison in ambient air. The results showed that the PCZO1%_150 exhibited better electrical performance, with saturation mobility (μsat) of 1.3 × 10−3 cm2 V−1 s−1. [ABSTRACT FROM AUTHOR]

In integrated circuits (ICs), the parasitic capacitance is one of the crucial factors that degrade the circuit dynamic performance; for instance, it reduces the operating frequency of the circuit. Eliminating the parasitic capacitance in organic transistors is notoriously challenging due to the inherent tradeoff between manufacturing costs and interlayer alignment accuracy. Here, we overcome such a limitation using a cost‐effective method for fabricating organic thin‐film transistors and rectifying diodes without redundant electrode overlaps. This is achieved by placing all electrodes horizontally and introducing sub‐100 nm gaps for separation. A representative small‐scale IC consisting of five‐stage ring oscillators based on the obtained nonparasitic transistors and diodes is fabricated on flexible substrates, which performs reliably at a low driving voltage of 1 V. Notably, the oscillator exhibits signal propagation delays of 5.8 μs per stage at a supply voltage of 20 V when utilizing pentacene as the active layer. Since parasitic capacitance has been a common challenge for all types of thin‐film transistors, our approach may pave the way toward the realization of flexible and large‐area ICs based on other emerging and highly performing semiconductors. [ABSTRACT FROM AUTHOR]

The isoindigo and its derivatives have rapidly garnered attention as widely employed electron‐deficient moieties, finding extensive applications in organic field‐effect transistors. In this study, four different isoindigo‐based organic semiconductor polymers were synthesized via a Stille coupling reaction of four isoindigo molecules with varying side chains serving as acceptors and bithiophene as donors. Furthermore, their optical, electrochemical, thermal stability, and other relevant properties were comprehensively evaluated. These polymers exhibited remarkable electrochemical and thermal stability attributed to their low LUMO energy level, which facilitates effective electrical contact between the semiconductor layer and the source/drain while ensuring excellent air stability for the semiconductor polymers. Additionally, solution‐gate field‐effect transistors prepared using these polymers achieved hole mobilities of 10−2 cm2 V−1 S−1 along with an Ion/Ioff ratio of 8.39×103, demonstrating exceptional field‐effect performance. [ABSTRACT FROM AUTHOR]

Quinoidal small molecule semiconductors hold huge potential in ambipolar organic field-effect transistors (OFETs) and organic spintronic devices. Here, two quinoidal molecules with methylthio side chains were synthesized to develop molecular semiconductors with high ambipolar mobility, designated QBDTS and QTBDTS. The theoretical calculation results reveal that QBDTS has a closed-shell structure while QTBDTS showed an open-shell structure with a biradical character (y0) of 0.46 and its magnetic properties were further investigated using electron paramagnetic resonance (EPR) and superconducting quantum interference device (SQUID) methods. The methyl side chains showed a large impact on the molecular orbital levels. The HOMO/LUMO levels of QBDTS and QTBDTS were measured to be −5.66/−4.56 and −5.27/−4.48 eV, respectively, which are favorable for ambipolar charge transport in OFETs. Importantly, the spin-coated QBDTS displayed hole and electron mobilities of 0.01 and 0.5 cm2 V−1 s−1 while QTBDTS showed a record high hole mobility of 1.8 cm2 V−1 s−1 and electron mobility of 0.3 cm2 V−1 s−1. Moreover, comparative studies of the thin film morphologies also manifested the beneficial influence of methyl side chains on film crystallinity and molecule orientation. These results strongly proved that methyl side chain engineering can be a simple but efficient strategy for modulating electronic properties and molecular stacking behaviors. This work also represents a big advancement for quinoidal molecular semiconductors in ambipolar OFET applications. [ABSTRACT FROM AUTHOR]

Inspired by the previous machine‐learning study that the number of hydrogen‐bonding acceptor (NHBA) is important index for the hole mobility of organic semiconductors, seven dithienobenzothiazole (DBT) derivatives 1 a–g (NHBA=5) were designed and synthesized by one‐step functionalization from a common precursor. X‐ray single‐crystal structural analyses confirmed that the molecular arrangements of 1b (the diethyl and ethylthienyl derivative) and 1c (the di(n‐propyl) and n‐propylthienyl derivative) in the crystal are classified into brickwork structures with multidirectional intermolecular charge‐transfer integrals, as a result of incorporation of multiple hydrogen‐bond acceptors. The solution‐processed top‐gate bottom‐contact devices of 1b and 1c had hole mobilities of 0.16 and 0.029 cm2 V−1s−1, respectively. [ABSTRACT FROM AUTHOR]

Solid‐state molecular arrangement has been recognized as the most important role in the charge transport properties of organic semiconductors. Although highly ordered molecular stacking is achieved in single crystals, maintaining single‐crystal molecular packing in solution‐processed thin films remains a significant challenge. Herein, a new type of n‐type organic semiconductors based on an asymmetric fluoranthene imide unit is reported, whose intermolecular packing and aggregation behavior in the thin film state can be effectively controlled by regulating the cyano substitution sites and alkyl chain types in the imide group. F10 with cyano groups at 4,9‐sites and branched 2‐ethylhexyl chain encouragingly shows a highly ordered single‐crystal‐like molecular packing in solution‐processed thin film after thermal annealing, and thus the resulting organic field‐effect transistors exhibit impressive charge transport performance, with the electron mobility as high as 0.116 cm2 V−1 s−1. This work opens a new avenue for developing high‐performance solution‐processed n‐type semiconductors. [ABSTRACT FROM AUTHOR]

Chemical doping is a powerful way to enhance the electrical performance of organic electronics. To avoid perturbing the ordered molecular packing of organic semiconducting hosts, molecular dopants are deposited on the surface of highly crystalline organic semiconductor thin films. However, such surface doping protocols not only limit charge‐transfer efficiency but also cause dopant diffusion problems, which significantly reduce charge carrier mobility and device stability. Here, an innovative anion bulk doping strategy is reported that allows effective doping of organic single‐crystalline films (OSCFs) without disrupting molecular ordering to improve the performance of organic field‐effect transistors (OFETs). This method is mediated by anion dopants and can be pictured as an effective charge transfer of dopants with organic semiconductors in liquid phase. The direct introduction of dopant anions overcomes limitations of partial charge transfer while avoiding interference from dopant aggregation with crystallization. Using this method, the average carrier mobility of the OSCFs is boosted by ≈2.5 times. Significantly, low‐voltage OFETs developed from anion‐doped OSCFs exhibit a near‐ideal subthreshold swing of 59.2 mV dec−1 and unparalleled mobility as high as 19.8 cm2 V−1 s−1 together with excellent stability. The concept of anion doping opens new avenues for improving the electrical performance of organic electronics. [ABSTRACT FROM AUTHOR]

Unipolar p‐ and n‐type organic field‐effect transistors (OFETs) are essential for constructing organic circuits and complementary designs crucial for high‐performance electronics. Traditionally, fabricating these transistors requires separate p‐type and n‐type organic semiconductors (OSCs), which complicates the process due to intricate patterning, protection of the first OSC layer, and considerable material wastage. In this work, an innovative approach is introduced, inspired by silicon transistor fabrication to obtain unipolar OFETs, employing a single ambipolar OSC in conjunction with doped organic semiconductor films (DOSCFs) as electrodes. This results demonstrate that OFETs with DOSCF electrodes suppress ambipolarity dramatically and achieve on/off ratios that are two to three orders of magnitude higher than those with metal electrodes, along with excellent stability. The unipolar characteristics of the devices are attributed to the unique work function properties and the intrinsic charge carrier behavior of the DOSCF electrodes. Significantly, inverter circuits utilizing these unipolar transistors outperformed traditional ambipolar transistors with metal electrodes, achieving a fivefold increase in voltage gain. This novel strategy promises to enhance the practicality and economic viability of organic electronics, paving the way for more sustainable and high‐performance circuit designs. [ABSTRACT FROM AUTHOR]

Developing novel n‐type organic semiconductors is an on‐going research endeavour, given their pivotal roles in organic electronics and their relative scarcity compared to p‐type counterparts. In this study, a new strategy was employed to synthesize n‐type organic semiconductors featuring a fully fused conjugated backbone. By attaching two sets of adjacent amino and formyl groups to the indacenodithiophene‐based central cores and triggering a tandem reaction sequence of a Knoevenagel condensation‐intramolecular cyclization, DFA1 and DFA2 were realized. The solution‐processed organic field effect transistors based on DFA1 exhibited unipolar n‐type transport character with a decent electron mobility of ca. 0.10 cm2 V−1 s−1 (ca. 0.038 cm2 V−1 s−1 for DFA2 based devices). When employing DFA1 as a third component in organic solar cells, a high power conversion efficiency of 19.2 % can be achieved in ternary devices fabricated with PM6 : L8‐BO : DFA1. This work provides a new pathway in the molecular engineering of n‐type organic semiconductors, propelling relevant research forward. [ABSTRACT FROM AUTHOR]

It seems impossible to use silicon oxide as a suitable gate dielectric material in metal-oxide-semiconductor field effect transistors. Many researchers have studied various metal oxides, nitrides, composite, and hybrid materials in search of dielectric materials that can replace silicon oxide. Each of these materials has advantages and disadvantages. In the present work, water-induced Lithium oxide (LiOx) with the organic PEIE (polyethylene imine ethoxylated) materials has been synthesized and studied. One advantage of the present work is using deionized water for getting (LiOx) precursor solution from lithium nitrate without the use of any toxic additives, resulting in a low cost-effective and eco-friendly synthesis. By fabricating three organic field effect transistors (OFETs) with LiOx/ PEIE nanocomposite materials with the same weight ratio (1:1), desirable electrical characteristics such as higher carrier mobility (μ) of 47.3 cm2V−1 S−1 , higher on-off current ratio (Ion/Ioff) of ∼105 , minima threshold voltage (Vth) shift of ∼ 0.6 (±0.2) V, lower subthreshold swing (SS) of 3.12 mV/decade and lower tunneling-, and leakage current density (J) of 2 (nA/cm2) could be found which demonstrated eco-friendly water-induced LiOx/ PEIE can be used as an alternative gate dielectric for the future of the OFET devices. [ABSTRACT FROM AUTHOR]

In the case of low-dimensional semiconductor devices, the basic physical properties of materials can be measured through device manufacturing using single crystal synthesis and exfoliation, but for expansion into various application fields, technology that can synthesize the material itself directly on the substrate is needed. For multi-composition low-dimensional semiconductor materials like Nb2Pd3Se8, the physical characteristics of constituent elements differ, making direct growth control on a substrate extremely challenging. This study successfully synthesized Nb2Pd3Se8 wires using different metal precursors (niobium and palladium) through liquid precursor–intermediated chemical vapor deposition (LPI-CVD). By adjusting the concentration of the liquid precursor and the synthesis temperature, the reproducible growth of Nb2Pd3Se8 wires was achieved, ranging in lengths from 2.29 to 15.04 μm. It was confirmed that PdSe2 is initially synthesized at lower temperatures (below 620 °C), and at temperatures above 620 °C, this PdSe2 transforms into Pd17Se15. Nb2Pd3Se8 is synthesized from the Pd17Se15 at these higher temperatures. X-ray diffraction (XRD) analysis revealed that the wires exhibit a preferred orientation along the (210) plane. Electronic device fabrication using these wires demonstrated their application potential as n-type semiconductors. Field-effect transistor (FET) measurements revealed remarkable performance, with an Ion/Ioff ratio of 575 and an electron mobility of 2.03 cm2 V−1 s−1. LPI-CVD provides a promising strategy for synthesizing ternary chalcogenide materials, opening possibilities for exploring diverse ternary phases. This study highlights the importance of controllability, reproducibility, and FET performance in growing Nb2Pd3Se8 wires via the CVD system, thereby paving the way for integrated applications and facilitating mixed-dimensional studies with other nanomaterials. [ABSTRACT FROM AUTHOR]

The operational stability becomes a key issue affecting the commercialization for organic field-effect transistors (OFETs). It is widely recognized to be closely related to the defects and traps at the interface between dielectric and organic semiconductors, but this understanding does not always effectively address operational instability, implying that the factors influencing the operational stability have not been fully understood. Here, we reveal that the self-heating effect is another crucial factor in operational stability. By using hexagonal boron nitride (hBN) to assist interfacial thermal dissipation, the dinaphtho[2,3-b: 2',3'-f] thieno[3,2-b] thiophene (DNTT) FETs exhibit high mobility of 14.18 cm2 V-1 s-1 and saturated power density up to 1.8 × 104 W cm-2. The OFET can operate at a power density of 1.06 × 104 W cm-2 for 30,000 s with negligible performance degradation, showing excellent operational stability under high power density. This work deepens the understanding on operational stability and develops an effective way for ultrahigh stable devices. [ABSTRACT FROM AUTHOR]

In the case of low-dimensional semiconductor devices, the basic physical properties of materials can be measured through device manufacturing using single crystal synthesis and exfoliation, but for expansion into various application fields, technology that can synthesize the material itself directly on the substrate is needed. For multi-composition low-dimensional semiconductor materials like Nb2Pd3Se8, the physical characteristics of constituent elements differ, making direct growth control on a substrate extremely challenging. This study successfully synthesized Nb2Pd3Se8 wires using different metal precursors (niobium and palladium) through liquid precursor–intermediated chemical vapor deposition (LPI-CVD). By adjusting the concentration of the liquid precursor and the synthesis temperature, the reproducible growth of Nb2Pd3Se8 wires was achieved, ranging in lengths from 2.29 to 15.04 μm. It was confirmed that PdSe2 is initially synthesized at lower temperatures (below 620 °C), and at temperatures above 620 °C, this PdSe2 transforms into Pd17Se15. Nb2Pd3Se8 is synthesized from the Pd17Se15 at these higher temperatures. X-ray diffraction (XRD) analysis revealed that the wires exhibit a preferred orientation along the (210) plane. Electronic device fabrication using these wires demonstrated their application potential as n-type semiconductors. Field-effect transistor (FET) measurements revealed remarkable performance, with an Ion/Ioff ratio of 575 and an electron mobility of 2.03 cm2 V−1 s−1. LPI-CVD provides a promising strategy for synthesizing ternary chalcogenide materials, opening possibilities for exploring diverse ternary phases. This study highlights the importance of controllability, reproducibility, and FET performance in growing Nb2Pd3Se8 wires via the CVD system, thereby paving the way for integrated applications and facilitating mixed-dimensional studies with other nanomaterials. [ABSTRACT FROM AUTHOR]

The distribution of density of states (DOS) holds fundamental importance in determining charge transport within organic field–effect transistors (OFETs). Herein, the modulation of DOS distribution in OFET devices is demonstrated by altering the chain conformation of the polymer dielectrics. A rapid film‐formation technique, specifically the spin‐casting method, is used to fabricate the dielectric layer using poly(methyl methacrylate) (PMMA). This method allows for the retention of some memory of the chain conformations from the solution to the resulting dry film. This memory effect is employed to prepare thin PMMA films with different local chain conformations by adjusting the quality of the solvent. Good solvent forms solidified films with a reduced amount of gauche conformer in the PMMA chain, resulting in a narrow DOS distribution width. Consequently, the device exhibited enhanced charge mobility and a reduced subthreshold swing. The observed change in the width of the DOS distribution can be attributed to the alteration of the local energy state of the semiconductor, induced by the local chain conformation of PMMA dielectrics through electrostatics and steric interactions. [ABSTRACT FROM AUTHOR]

In organic field‐effect transistors (OFETs) using disordered organic semiconductors, interface traps that hinder efficient charge transport, stability, and device performance are inevitable. Benchmark poly(9,9‐dioctylfuorene‐co‐bithiophene) (F8T2) liquid‐crystalline polymer semiconductor has been extensively investigated for organic electronic devices due to its promising combination of charge transport and light emission properties. This study demonstrates that high‐capacitance single‐layered ionic polyurethane (PU) dielectrics enable enhanced charge transport in F8T2 OFETs. The ionic PU dielectrics are composed of a mild blending of PU ionogel and PU solution, thereby forming a solid‐state film with robust interfacial characteristics with semiconductor layer and gate electrode in OFETs and measuring high capacitance values above 10 µF cm−2 owing to the combined dipole polarization and electric double layer formation. The optimized fabricated ionic PU‐gated OFETs exhibit a low‐voltage operation at −3 V with a remarkable hole mobility of over 5 cm2 V–1 s–1 (average = 2.50 ± 1.18 cm2 V–1 s–1), which is the highest mobility achieved so far for liquid‐crystalline F8T2 OFETs. This device also provides excellent bias‐stable characteristics in ambient air, exhibiting a negligible threshold voltage shift of −0.03 V in the transfer curves after extended bias stress, with a reduced trap density. [ABSTRACT FROM AUTHOR]

In this work, a gate insulator poly (4-vinylphenol) (PVP) of an organic field effect transistor (OFET) was deposited using an inkjet printing technique, realized via a high printing resolution. Various parameters, including the molecular weight of PVP, printing direction, printing voltage, and drop frequency, were investigated to optimize OFET performance. Consequently, PVP with a smaller molecular weight of 11 k and a printing direction parallel to the channel, a printing voltage of 18 V, and a drop frequency of 10 kHz showed the best OFET performance. With a direct ink writing-printed organic semiconductor, this work paves the way for fully inkjet-printed OFETs. [ABSTRACT FROM AUTHOR]

Organic electroactive materials, particularly semiconducting polymers, are at the forefront of emerging organic electronics. Among the plethora of unique features, the possibility to formulate inks out of these materials is particularly promising for the large‐scale manufacturing of electronics at lower cost on a variety of soft substrates. While solution deposition of semiconducting materials is promising for developing printed electronics, the environmental footprint of the materials and related devices needs to be considered to achieve sustainable manufacturing. Towards the development of greener printed electronics, this work investigates the utilization of a non‐toxic, environmentally‐friendly solvent, namely branched polyethylene (BPE), to formulate semiconducting inks. Focusing on a diketopyrrolopyrrole‐based (DPP) semiconducting polymer, shellac as dielectric, and BPE as the solvent, solutions were prepared in different concentrations and their rheological properties were characterized. Then, printing on polyethylene terephthalate (PET) substrates using two different techniques was performed to fabricate organic field‐effect transistors (OFETs). Both printing techniques yielded OFETs with good performance and device characteristics, averaging approximately 10−2 and 10−4 cm2 V−1 s−1, respectively, for slot‐die coating and direct‐ink writing deposition. Notably, despite some difference in threshold voltages, OFETs produced via slot‐die coating and direct‐ink writing showed comparable charge mobilities to previously reported OFETs prepared from similar materials, particularly those prepared on silicon dioxide wafers. Overall, this work confirms the suitability of BPE to formulate semiconducting inks to develop printed electronics in a greener manner. The printing methodology developed in this work also open new avenues for the design of functional printed electronics and related technologies. [ABSTRACT FROM AUTHOR]

This study introduces the first fluorene‐flanked diketopyrrolopyrrole (FDPP)‐based semiconducting polymers, named Boc‐FDPP‐CoMs (CoM = TT or BT), synthesized via copolymerization of tert‐butoxycarbonyl (t‐Boc)‐substituted FDPP as the acceptor unit with thieno[3,2‐b]thiophene (TT) or bithiophene (BT) as the donor comonomers. The incorporation of t‐Boc groups addresses challenges related to poor solubility and polymer backbone twisting associated with the FDPP building block. While Boc‐FDPP‐CoMs demonstrate solubility in common organic solvents, facilitating favourable solution‐processability for uniform film fabrication, they exhibit significant backbone twisting, leading to poor charge transport properties. Post‐deposition thermal annealing at a mild temperature as low as 170°C conveniently removes t‐Boc groups. The resulting t‐Boc‐free copolymers, NH‐FDPP‐TT and NH‐FDPP‐BT, exhibit hole mobilities up to 5.0 × 10−3 and 2.2 × 10−3 cm2 V−1 s−1 in organic field effect transistors (OFETs), respectively, representing a substantial increase compared to their counterparts with t‐Boc groups. This study underscores a meticulously designed strategy for achieving solution solubility and backbone coplanarity through side‐chain engineering for FDPP and potentially other sterically demanding building blocks to construct high‐performance semiconducting polymers for OFETs and other applications. [ABSTRACT FROM AUTHOR]

Demonstration of acoustically improving charge transport characteristics of regioregular poly(3-hexylthiophene) (rrP3HT) based organic field effect transistor (OFET) fabricated on YZ lithium niobate piezoelectric substrate has been presented and analyzed. Owing to the acoustoelectric (AE) effect, a surface acoustic wave (SAW) propagating through the substrate transfers its momentum and energy to the charges in the rrP3HT channel, reducing the effective energy gap between the charge hopping states, which leads to a decrease in charge trapping and an increase in path conductivity and number of paths for charge transport. Hence, a significant increase in drain current and mobility and a substantial reduction in gate voltage were observed in the presence of SAW. The AE effect has been especially predominant in devices with smaller channel width, depicting that gate voltage brought down by 30 V provided drain current equivalent to that obtained in the absence of SAW. The bias stress analysis of the devices showed an increase in current instead of the decrease, generally seen with respect to time, reinforcing that the long term charge trapping effect in OFETs can be compensated with the propagation of SAW leading to enhanced device stability. [ABSTRACT FROM AUTHOR]

Epitaxial graphene (EG) on cubic silicon carbide (3C-SiC) on silicon holds the promise of tunable nanoelectronic and nanophotonic devices, some uniquely unlocked by the graphene/cubic silicon carbide combination, directly integrated with the current well-established silicon technologies. Yet, the development of graphene field-effect devices based on the 3C-SiC/Si substrate system has been historically hindered by poor graphene quality and coverage, as well as substantial leakage issues of the heteroepitaxial system. We address these issues by growing EG on 3C-SiC on highly resistive silicon substrates using an alloy-mediated approach. In this work, we demonstrate a field-effect transistor based on EG/3C-SiC/Si with gate leakage current 6 orders of magnitude lower than the drain current at room temperature, which is a vast improvement on the current literature, opening the possibility for dynamically tunable nanoelectronic and nanophotonic devices on silicon at the wafer level. [ABSTRACT FROM AUTHOR]

Cross conjugation, though prevalent in many organic compounds, is typically considered less effective for electron delocalization compared to linear conjugation. Consequently, it is rarely used as the backbone structure for semiconducting conjugated polymers. In this study, we designed and synthesized a novel building block, TIDP, which features a central cyclic dipeptide with cross conjugation characteristics. Strong intramolecular hydrogen bonding interactions confer TIDP with a highly rigid and coplanar conformation. Importantly, theoretical calculations reveal that π electrons are well delocalized across the entire structure, despite its low aromaticity. Conjugated polymers incorporating TIDP exhibit high charge carrier mobilities, demonstrating the effective π electrons delocalization of this innovative building block. Our findings show that with rational design, cross conjugation can achieve effective π electrons delocalization, providing a valuable approach for developing high‐performance conjugated polymers for organic electronic materials. [ABSTRACT FROM AUTHOR]

Organic field-effect transistors (OFETs), based on poly(3-hexylthiophene) (P3HT) enriched by indium-doped zinc oxide (IZO) nanoparticles as an active layer, were successfully prepared by the spin-coating method. We report a significant impact of IZO nanoparticles on the P3HT carrier mobility, which can be controlled by IZO-level loading. The X-ray diffraction and the UV–visible analysis conducted on P3HT/IZO nanocomposite thin films showed an enhancement of the conjugated chain length. Moreover, the improvement of the P3HT properties resulted in an increase in the polymer crystallinity and a reduction of the trap density. A particular result was illustrated corresponding to the enhancement of the carrier mobility and ION/IOFF ratio in the devices based on hybrid nanocomposite. The significant hysteresis observed in this device, which depends on IZO content and illumination under ambient conditions and renders these OFETs promising for various optoelectronic and nonvolatile memory applications. [ABSTRACT FROM AUTHOR]

Dye‐containing polymers P1 (PEDPP‐OT‐BDT) and P2 (PEDPP‐OT‐BDTT) including a π‐extended diketopyropyrrole (DPP) derivative and electron‐rich thiophene fused ring units (4,8‐bis((2‐ethylhexyl)oxy)benzo[1,2‐b:4,5‐b′]dithiophene for P1 and 4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene for P2) were synthesized as narrow band gap dyes. A π‐extended DPP (EDPP‐OT‐BrPh), fragment of the polymers P1 and P2, was obtained by extending the π‐conjugation of DPP using Ru(III)‐catalyzed C−H and N−H activation reported by Gońka et al. in 2019, exhibiting a high quantum yield (ϕem=0.84) and small HOMO‐LUMO gap (Eg=1.69 eV) due to the spatial overlap of the HOMO and LUMO orbitals. The solubility of the π‐extended DPP was improved by introducing four 2‐octylthophene side chains around the periphery of the planer dye moiety, while maintaining the high planarity of the dye molecule, which is essential to the function of optoelectronic devices. As a result, P1 and P2, polymerized with the π‐extended DPP and BDT derivatives, exhibit carrier mobility of approximately 10−5 cm2/Vs in organic field‐effect transistors (OFETs). In bulk heterojunction (BHJ) solar cells with [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM), they demonstrate a power conversion efficiency (PCE) of 1.0 % with an average transmittance (AVTs) of around 60 %. [ABSTRACT FROM AUTHOR]

Small molecule/polymer semiconductor blends are promising solutions for the development of high‐performing organic electronics. They are able to combine ease in solution processability, thanks to the tunable rheological properties of polymeric inks, with outstanding charge transport properties thanks to high crystalline phases of small molecules. However, because of charge injection issues, so far such good performances are only demonstrated in ad‐hoc device architectures, not suited for high‐frequency applications, where transistor dimensions require downscaling. Here, the successful integration of the most performing blend reported to date, based on 2,7‐dioctyl[1] benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) and poly(indacenodithiophene‐co‐benzothiadiazole) (C16IDT‐BT), in OFETs characterized by channel and overlap lengths equal to 1.3 and 1.9 µm, respectively, is demonstrated, enabling a transition frequency of 23 MHz at ‐8 V. Two key aspects allowed such result: molecular doping, leading to width‐normalized contact resistance of only 260 Ωcm, allowing to retain an apparent field‐effect mobility as high as 3 cm2/(Vs) in short channel devices, and the implementation of a high capacitance dielectric stack, enabling the reduction of operating voltages below 10 V and the overcoming of self‐heating issues. These results represent a fundamental step for the future development of low‐cost and high‐speed printed electronics for IoT applications. [ABSTRACT FROM AUTHOR]

Direct printing of conjugated polymer thin‐film transistors enables the fabrication of deformable devices with low cost, high throughput, and large area. However, a relatively poor device performance of printed devices remains a major obstacle to their application in high‐end display backplanes and integrated circuits. In this study, high‐performance and highly stackable printed organic transistors is developed, arrays, and circuits using a near‐amorphous polymer, indacenodithiophene‐co‐benzothiadiazole (IDT‐BT). The printed devices exhibited high saturation mobility (>1 cm2 V−1 s−1), high on/off ratio (>107), and low subthreshold slope (245 mV dec−1). In addition, 16 × 16 printed IDT‐BT arrays achieved 100% fabrication yield, with excellent device‐to‐device uniformity and low variations of mobility (9.55%) and threshold voltage (4.51%), and good operational and environmental stability (>365 days). Furthermore, five stacked 3D transistors are demonstrated with an excellent 3D uniformity without compromising device performance due to a low required thermal budget for processing amorphous IDT‐BT. Finally, a new concept of 3D universal logic gate with high voltage gain (33.91 V/V) and record density (100 printed transistors per cm2) is proposed and fabricated, which is relevant for the commercialization of low‐cost printed display backplanes and high‐density integrated circuits based on highly processable polymeric semiconductors. [ABSTRACT FROM AUTHOR]

Low‐cost and high‐performance electronics based on synthetically simple materials are required to fuel the deployment of smart packaging and wearable electronics. Metal phthalocyanines (MPcs) are promising semiconductors for use in n‐type organic thin film transistors (OTFTs) but often require high operating voltages. The first silicon phthalocyanine‐based OTFT with a polymer dielectric is reported as an alternative to traditional metal oxide dielectrics. Incorporating poly(methyl methacrylate) (PMMA) as the dielectric successfully reduces the threshold voltage (VT) of bispentafluorophenoxy SiPc (F10‐SiPc) from 14.9V to 7.3V while retaining high mobility. Further reduction in VT is obtained by using copolymers and blends of PMMA and dimethylamino ethyl methacrylate (DMAEMA)‐containing polymers, where a higher molar fraction of DMAEMA leads to a consistent drop in VT to ‐0.7 V. The electron‐donating groups of the tertiary amines in the DMAEMA show clear interfacial doping of the semiconductor, reducing the voltage required to populate the dielectric/semiconductor interface with charge carriers and turn on the device. Blending trace amounts of DMAEMA‐containing copolymers with PMMA proves to be an effective strategy for reducing the VT while keeping the charge mobility high, unlike when using pure copolymers with elevated DMAEMA content. Time of flight secondary ion mass spectroscopy (ToF‐SIMS) and X‐ray photoelectron spectroscopy (XPS) demonstrate that the DMAEMA‐containing copolymer is floating to the surface of the PMMA blend at the dielectric–semiconductor interface, which explains the reduced VT. Synchrotron scanning transmission X‐ray microscopy (STXM) demonstrates that PMMA promotes a more edge‐on orientation of F10‐SiPc films, compared to the more face‐on orientation when deposited on the DMAEMA containing copolymer. This study demonstrates a straightforward process for designing dielectric polymers and their blends for the reduction in VT for n‐type OTFTs. [ABSTRACT FROM AUTHOR]

Organic semiconductor (OSC) films fabricated by meniscus‐guided coating (MGC) methods are suitable for cost‐effective and flexible electronics. However, achieving crystalline thin films by MGC methods is still challenging because the nucleation and crystal growth processes are influenced by the intertwined interactions among solvent evaporation, stochastic nucleation, and the fluid flow instabilities. Herein, a novel flexible fountain pen with active ink supply is designed and used to print OSCs. This direct‐write method allows the flexible pen tip to contact the substrate, maintaining a robust meniscus by eliminating the gap found in conventional MGCs. An in situ optical microscopy observation system shows that the precursor film plays a critical role on the crystallization and the formation of coffee rings and dendrites. The computational fluid dynamics simulations demonstrate that the microstructure of the pen promotes extensional flows, facilitating mass transport and crystal alignment. Highly‐aligned ribbon‐shaped crystals of a small organic molecule (TIPS‐pentacene), as well as a semiconducting polymer (N2200) with highly‐ordered orientations, have been successfully printed by the flexible fountain pen. Organic field‐effect transistors based on the flexible pen printed OSCs exhibit high performances and strong anisotropic mobility. In addition, the flexible fountain pen is expandable for printing multiple lines or large‐area films. [ABSTRACT FROM AUTHOR]

Nanohoops, cyclic association of π‐conjugated systems to form a hoop‐shaped molecule, have been widely developed in the last 15 years. Beyond the synthetic challenge, the strong interest towards these molecules arises from their radially oriented π‐orbitals, which provide singular properties to these fascinating structures. Thanks to their particular cylindrical arrangement, this new generation of curved molecules have been already used in many applications such as host–guest complexation, biosensing, bioimaging, solid‐state emission and catalysis. However, their potential in organic electronics has only started to be explored. From the first incorporation as an emitter in a fluorescent organic light emitting diode (OLED), to the recent first incorporation as a host in phosphorescent OLEDs or as charge transporter in organic field‐effect transistors and in organic photovoltaics, this field has shown important breakthroughs in recent years. These findings have revealed that curved materials can play a key role in the future and can even be more efficient than their linear counterparts. This can have important repercussions for the future of electronics. Time has now come to overview the different nanohoops used to date in electronic devices in order to stimulate the future molecular designs of functional materials based on these macrocycles. [ABSTRACT FROM AUTHOR]

We report the synthesis of a longitudinally helical molecular nanocarbon, hexabenzoheptacene (HBH), along with its dimethylated derivative (HBH‐Me), which are composed of six benzene rings periodically benzannulated to both zigzag edges of a heptacene core. This benzannulation pattern endows the resulting nanocarbons with a helical heptacene core and local aromaticity, imparting enhanced solubility and stability to the system. The chiral HBH‐Me adopts a more highly twisted conformation with an end‐to‐end twist angle of 95°, enabling the separation of the enantiomers. Both HBH and HBH‐Me can be facilely oxidized into their corresponding dications, which exhibit enhanced planarity and aromaticity upon loss of electrons. Notably, both longitudinally helical nanocarbons readily promote solid state packing into two‐dimensional (2D) arrangement. Single‐crystal microbelts of HBH‐Me show hole mobility up to 0.62 cm2 V−1 s−1, illustrating the promising potential of these longitudinally helical molecules for organic electronic devices. [ABSTRACT FROM AUTHOR]

The improvement of living standards and the advancement of medical technology have led to an increased focus on health among individuals. Detections of biomarkers are feasible approaches to obtaining information about health status, disease progression, and response to treatment of an individual. In recent years, organic electrochemical transistors (OECTs) have demonstrated high electrical performances and effectiveness in detecting various types of biomarkers. This review provides an overview of the working principles of OECTs and their performance in detecting multiple types of biomarkers, with a focus on the recent advances and representative applications of OECTs in wearable and implantable biomarker detections, and provides a perspective for the future development of OECT‐based biomarker sensors. [ABSTRACT FROM AUTHOR]

Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures. [ABSTRACT FROM AUTHOR]

While dual‐acceptor‐type conjugated polymers have witnessed a great success in organic field‐effect transistors (OFETs), their potential multifunctionality in other optoelectronic devices has been overlooked. Herein, three conjugated polymers (DPPF‐BDD, DPPT‐BDD, and DPPSe‐BDD) comprising furan/thiophene/selenophene‐flanked diketopyrrolopyrrole (DPP) and dioxo‐benzodithiophene (BDD) as repeating units are designed, synthesized, and characterized. Modulating the chalcogen on DPP flank shows an impact on dual‐acceptor polymer optoelectronic properties. Subsequently, the potential of these polymers in both OFETs and perovskite solar cells (PSCs) either as semiconductors or as passivation materials, respectively, is investigated. Interestingly, DPPF‐BDD, DPPT‐BDD, and DPPSe‐BDD show ambipolar behavior in vacuum with hole (μh) and electron (μe) mobilities of 0.0263/0.0223, 0.0187/0.0123, and 0.0070/0.0051 cm2 V−1 s−1, respectively. Upon doping tetrabutylammonium iodide into DPPF‐BDD, DPPT‐BDD, and DPPSe‐BDD polymers, the respective OFETs show relatively higher μh and μe (0.0389/0.0503; 0.0289/0.0259; 0.0058/0.0156 cm2 V−1 s−1) than the undoped polymer OFETs. Furthermore, DPPF‐BDD‐, DPPT‐BDD‐, and DPPSe‐BDD‐incorporated (in the antisolvent treatment and PCBM electron transport layer) PSCs display maximum power conversion efficiency of 23.48%, 22.85%, and 23.35%, respectively, surpassing the control device (22.83%), which is benefited from the perovskite surface passivation and the charge extraction improvement. Overall, a new class of multifunctional DPP‐based dual‐acceptor‐type polymers that are highly compatible with OFETs and high‐performance PSCs is presented. [ABSTRACT FROM AUTHOR]

This study reports on the first all‐printed vertically stacked organic electrochemical transistors (OECTs) operating in accumulation mode; the devices, relying on poly([4,4′‐bis(2‐(2‐(2‐methoxyethoxy)ethoxy)ethoxy)‐2,2′‐bithiophen‐5,5′‐diyl]‐alt‐[thieno[3,2‐b]thiophene‐2,5‐diyl]) (pgBTTT) as the active channel material, are fabricated via a combination of screen and inkjet printing technologies. The resulting OECTs (W/L ≈5) demonstrate good switching performance; gm, norm ≈13 mS cm−1, µC* ≈21 F cm−1 V−1 s−1, ON–OFF ratio > 104 and good cycling stability upon continuous operation for 2 h. The inkjet printing process of pgBTTT is established by first solubilizing the polymer in dihydrolevoglucosenone (Cyrene), a non‐toxic, cellulose‐derived, and biodegradable solvent. The resulting ink formulations exhibit good jettability, thereby providing reproducible and stable p‐type accumulation mode all‐printed OECTs with high performance. Besides the environmental and safety benefits of this solvent, this study also demonstrates the assessment of how the solvent affects the performance of spin‐coated OECTs, which justifies the choice of Cyrene as an alternative to commonly used harmful solvents such as chloroform, also from a device perspective. Hence, this approach shows a new possibility of obtaining more sustainable printed electronic devices, which will eventually result in all‐printed OECT‐based logic circuits operating in complementary mode. [ABSTRACT FROM AUTHOR]

Highlights: Transient response plays a crucial role as a performance indicator for organic electrochemical transistors (OECTs), particularly in their application in high-speed logic circuits and neuromorphic computing systems. This review presents a systematic overview on the fundamental principles underlying OECT transient responses, emphasizing the essential roles of transient electron and ion dynamics, as well as structural evolution, in both volatile and non-volatile behaviors. We also discuss the materials, morphology, device structure strategies on optimizing transient responses. The rapid development of organic electrochemical transistors (OECTs) has ushered in a new era in organic electronics, distinguishing itself through its application in a variety of domains, from high-speed logic circuits to sensitive biosensors, and neuromorphic devices like artificial synapses and organic electrochemical random-access memories. Despite recent strides in enhancing OECT performance, driven by the demand for superior transient response capabilities, a comprehensive understanding of the complex interplay between charge and ion transport, alongside electron–ion interactions, as well as the optimization strategies, remains elusive. This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses, emphasizing advancements in device physics and optimization approaches. We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications, as well as the impact of materials, morphology, device structure strategies on optimizing transient responses. This paper not only offers a detailed overview of the current state of the art, but also identifies promising avenues for future research, aiming to drive future performance advancements in diversified applications. [ABSTRACT FROM AUTHOR]

The backwardness of n‐type organic semiconductors still exists compared with the p‐type counterparts. Thus, the development of high‐performance n‐type organic semiconductors is of great importance for organic electronic devices and their integrated circuits. In recent years, azabenzannulated perylene diimide (PDI), as one of immense bay‐region‐annulated PDI derivatives, has drawn considerable attentions. However, the electronic mobilities of azabenzannulated PDI derivatives are barely satisfactory. In this contribution, the peripheral benzene ring in azabenzannulated PDI 2 was fused to the ortho position by intramolecular C−H arylation cyclization. This endows the resultant azabenzannulated PDI 4 a planar configuration as well as electron deficient pentagonal ring. As a result, the electronic mobility of 4 is almost two orders of magnitude higher than that of the nonfused azabenzannulated PDI 2. This work shall pave a new avenue in elevating the performance of azabenzannulated PDI in organic electronics. [ABSTRACT FROM AUTHOR]

A novel highly π-extended heteroarene Benzo[1,2-b:4,5-b']di(naphtho[1,2-d]thiophene) (DBTBT) was used for organic field-effect transistors (OFETs). The mobilities of OFET were greatly improved from 0.34–0.58 cm2V−1s−1 to 1.02–1.75 cm2V−1s−1 by morphology tuning through 2 steps' controlling substrate temperature. More importantly, the OFETs showed a good ambient stability in 30 days measurements. The flexible OFET arrays were prepared on polyethylene terephthalate substrate with octadecyl trichlorosilane modified polymethylsilsesquioxane/polyacrylonitrile gate dielectrics and demonstrated a 100% yield. Further, this flexible cell was used for ultraviolet light detection, which showed good ability of detecting low power light (such as λ = 254 nm, 7 μW/cm2). [ABSTRACT FROM AUTHOR]