Evaluation of contact resistance for high mobility C10-DNTT based OFET using two-dimensional TCAD simulation.

The transmission line method (TLM) is an indirect technique for determining contact resistance from the current-voltage characteristics of a group of devices with different channel lengths. In this manuscript, the dependence of contact resistance on the metal-semiconductor injection barrier and fine tuning of energy barrier to enhance electrical performance of organic field effect transistor (OFET) are examined using TLM. The top contact device configuration is utilized here with high mobility organic semiconductor (C10-DNTT). A high-k material aluminum oxide (Al2O3) employed as gate insulator whose thickness and capacitance has been computed using equivalent oxide thickness method proposed by ITRS. The charge injection at the energy barrier has been improved by employing quasi-ohmic injection mechanism (0≤ ΔEb <0.3eV). The device simulations have resulted in an effective mobility of 2.05 cm2/V. s, on/off current ratio of 85, VT 0.24V, SS of 1.97 V/dec and a very low contact resistance(Ω). [ABSTRACT FROM AUTHOR]