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Large Schottky barriers formed at the interfaces between graphene and 2D semiconductors often degrade device performance. Here, taking the Janus MoSO as a prototype and using the first-principles calculations together with the band unfolding technique, we demonstrate that the Ohmic contact (OC), which is absent in pristine graphene/MoXY (X/Y = S, Se, Te. X ≠ Y), is realized in the pristine graphene/MoSO (G/MoSO) heterostructure. G/OMoS shows the n -type OC (OC- n) that leads to the p -doping of the graphene layer with a hole density of 1.17 × 10 13 /cm 2 , while G/SMoO exhibits the p -type Schottky contact with a tunable Schottky barrier height. The realization of OC and the interface dependent contact type are mainly attributed to the large intrinsic dipole between asymmetric S and O layers, which dominate the different behaviors of charge transfer and the associated interface dipole in heterostructures. Inspired by the finding, considering the larger dipole moment in Janus MoSeO and MoTeO, we further confirm that both OC- n and OC- p exist in pristine G/MoSeO and G/MoTeO. Moreover, on comparison with MoSO, both G/OMoS and G/SMoO show enhanced optical absorptions (∼ 10 5 cm − 1 ) in most of the visible light range. Our results not only show the potential application of G/MoSO in nanoelectronic devices such as field-effect transistors but also indicate that dipole engineering would help us to predict or design desirable electric contacts of Janus-transition metal dichalcogenide-based metal/semiconductor systems in advance. [ABSTRACT FROM AUTHOR]

The conductivity type is one of the most fundamental transport properties of semiconductors, which is usually identified by fabricating the field-effect transistor, the Hall-effect device, etc. However, it is challenging to obtain an Ohmic contact if the sample is down to nanometer-scale because of the small size and intrinsic heterogeneity. Noncontact dielectric force microscopy (DFM) can identify the conductivity type of the sample by applying a DC gate voltage to the tip, which is effective in tuning the accumulation or depletion of charge carriers. Here, we further developed a dual-modulation DFM, which simplified the conductivity type identification from multiple scan times under different DC gate voltages to a single scan under an AC gate voltage. Taking single-walled carbon nanotubes as testing samples, the semiconducting-type sample exhibits a more significant charge carrier accumulation/depletion under each half-period of the AC gate voltage than the metallic-type sample due to the stronger rectification effect. The charge carrier accumulation or depletion of the p-type sample is opposite to that of the n-type sample at the same half-period of the AC gate voltage because of the reversed charge carrier type. [ABSTRACT FROM AUTHOR]

Hyperdoping Si with transition metals to form intermediate bands for infrared absorption has attracted attention recently for producing sub-bandgap photoconductivity. In particular, Si hyperdoped with Au has been demonstrated to exhibit optoelectronic response at 1550 nm. However, the reported external quantum efficiencies (EQEs) are low, and the device fabrication processes had not been optimized. In this paper, we demonstrate a significant improvement in sub-bandgap EQE through modification of the material and device fabrication processes. By increasing the Si:Au layer thickness, modification of device design, and formation of Ohmic contacts, the EQE was measured to be as high as 0.44% at 1550 nm, nearly two orders of magnitude higher than previous reports from similar devices. Additionally, the EQE was measured to be in the 10-3 range for wavelengths as long as 2.4 μ m. The EQE spectrum showed features that were attributed to defect levels from a substitutional Au acceptor defect. The above bandgap EQE showed gain in one device. Thermal annealing at 300 ° C does not improve the efficiency of Si:Au photodiodes. These results demonstrate the viability of Au-hyperdoped Si for infrared detection below the bandgap of Si. [ABSTRACT FROM AUTHOR]

The valence and conduction band offsets at the interfaces between NiO/AlN, SiO2/AlN, Al2O3/AlN, and ITO/AlN heterointerfaces were determined via x-ray photoelectron spectroscopy using the standard Kraut technique. These represent systems that potentially would be used for p-n junctions, gate dielectrics, and improved Ohmic contacts to AlN, respectively. The band alignments at NiO/AlN interfaces are nested, type-I heterojunctions with a conduction band offset of −0.38 eV and a valence band offset of −1.89 eV. The SiO2/AlN interfaces are also nested gap, type-I alignment with a conduction band offset of 1.50 eV and a valence band offset of 0.63 eV. The Al2O3/AlN interfaces are type-II (staggered) heterojunctions with a conduction band offset of −0.47 eV and a valence band offset of 0.6 eV. Finally, the ITO/AlN interfaces are type-II (staggered) heterojunctions with conduction band offsets of −2.73 eV and valence band offsets of 0.06 eV. The use of a thin layer of ITO between a metal and the AlN is a potential approach for reducing contact resistance on power electronic devices, while SiO2 is an attractive candidate for surface passivation or gate dielectric formation on AlN. Given the band alignment of the Al2O3, it would only be useful as a passivation layer. Similarly, the use of NiO as a p-type layer to AlN does not have a favorable band alignment for efficient injection of holes into the AlN. [ABSTRACT FROM AUTHOR]

A novel bilateral impact-ionization-avalanche-transit-time (BIMPATT) diode based on AlGaN/GaN two-dimensional electron gas is proposed in this article. The BIMPATT is compatible with the available GaN high electron mobility transistor (HEMT) manufacturing process and has a shorter actual electron transit distance than existing HEMT-like IMPATT (HIMPATT) diodes. Compared with the same-sized HIMPATT, the optimum frequency of BIMPATT rises from 320 to 420 GHz and possesses a far wider operating frequency band, especially in the near 0.9 THz range. The maximum DC-RF conversion efficiency rises from 12.9% to 17.6%. The maximum RF power of BIMPATT is 3.18 W/mm, which is similar to 3.12 W/mm of the HIMPATT. Furthermore, our simulation demonstrated that the characteristics of BIMPATT are significantly affected by the length of anode and the thickness of the AlGaN barrier layer. The effects of ohmic contact resistance and background impurities on BIMPATT are also taken into account. This paper provides a reference for the design and characteristics enhancement of the lateral IMPATT devices. [ABSTRACT FROM AUTHOR]

We demonstrated the crystal growth of group-III arsenides (III-As) on GaN via an arsenidation layer and GaN-channel electron mobility transistors (HEMTs) with a regrowth InAs/GaAs source and drain (S/D) region. By annealing under an AsH3 atmosphere, the surface of a GaN (0001) template is arsenided. We grew ⟨ 111 ⟩ oriented InAs and GaAs on arsenided GaN. Silicon-doped n-type InAs with a carrier mobility of over 1500 cm2/V s and a carrier concentration of over 1 × 1019 cm−3 was successfully obtained. The fabrication process and direct-current characteristics of GaN-channel HEMTs with the regrown Si-doped InAs/GaAs S/D region were demonstrated for the first time. A maximum transconductance estimated from transfer characteristics was as high as ∼195 mS/mm for the HEMT with a gate length of 2 μm without passivation, which is comparable to those for the HEMT without any S/D regrowth. The impact of the InAs/GaAs S/D region on the on-resistance of the fabricated HEMTs was estimated to be ∼0.9 Ω mm, which can be reduced by optimizing the device structures and process conditions. These results indicate that the process of GaN arsenidation and III-As regrowth can be used without any device performance degradation. Therefore, further lowering the ohmic contact resistivity and on-resistance of GaN-channel HEMTs is possible by maturing the manufacturing-process technology of III-As-contained GaN-channel HEMTs. [ABSTRACT FROM AUTHOR]

Roughly, 50% of primary energy worldwide is rejected as waste heat over a wide range of temperatures. Waste heat above 573 K has the highest Carnot potential (> --> 50 %) to be converted to electricity due to higher Carnot efficiency. Thermoelectric (TE) materials have gained significant attention as potential candidates for efficient thermal energy conversion devices. Silicon nanowires (SiNWs) are promising materials for TE devices due to their unique electrical and thermal properties. In this study, we report the successful fabrication of high-quality double-sided SiNW arrays using advanced techniques. We engineered the double-sided structure to increase the surface area and the number of TE junctions, enhancing TE energy conversion efficiency. We also employed non-agglomeration wire tip engineering to ensure uniformity of the SiNWs and designed effective Ohmic contacts to improve overall TE efficiency. Additionally, we post-doped the double-sided SiNW arrays to achieve high electrical conductivity. Our results showed a significant improvement in the TE performance of the SiNW array devices, with a maximum figure-of-merit (ZT) value of 0.24 at 700 K, fabricated from the single SiNW with ZT of 0.71 at 700 K in our previous work [Yang et al., Nat. Commun. 12(1), 3926(2021)]. [ABSTRACT FROM AUTHOR]

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. In this study, we develop a charge-transfer doping strategy with WSe2/α-RuCl3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 1013 cm-2 can be achieved in the WSe2/α-RuCl3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe2 transistors with an on-current of 35 μA·μm-1 and an ION/IOFF ratio exceeding 109 at room temperature.

The anisotropic hole transport along [0001] and [11 2 ¯ 0] in the p-doped (10 1 ¯ 0) GaN layer was compared for layers grown on bulk (10 1 ¯ 0) GaN substrates and on (10 1 ¯ 0) sapphire. The sheet resistance along [0001] was 1.1 times larger on GaN substrates and even 1.2 times larger on sapphire than that along [11 2 ¯ 0]. The anisotropic hole transport on bulk GaN substrates is due to the anisotropy of the hole's effective mass and the different contribution of carriers in different bands, whereas the larger anisotropy for GaN on sapphire is also due to additional scattering at stacking faults. The annealing process of metal Mg applied to the m-plane p-type GaN successfully results in a robust p-type ohmic contact, functioning as a p + + layer. [ABSTRACT FROM AUTHOR]

We investigated the thermal stability and performance of AlGaN/AlN/GaN Hall-effect sensors under industry-relevant atmospheric conditions. The thermal stability and performance of Hall sensors are evaluated by monitoring Hall sensitivity, two-dimensional electron gas density, and Ohmic contact resistance during aging at 200 °C for up to 2800 h under atmospheric conditions. This was accomplished by characterizing AlGaN/AlN/GaN micro-Hall sensors, with and without contacts, and before and after being placed under different thermal aging times. Observed electrical performance was correlated with the micro-structural evolution of AlGaN/AlN/GaN Hall sensor heterostructures. Results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h aging at 200 °C without any significant degradation of (i) Hall sensitivity, (ii) two-dimensional electron gas, and (iii) Ohmic contacts. However, there was a small change in sheet density and mobility, which is due to a decrease in polarization, resulting from local inhomogeneous strain relief at the barrier layer. During the early stage of thermal aging, a decrease in contact resistance was also observed and attributed to (i) out-diffusion of "Ga" at the vicinity of the contact interface, and (ii) a reduction in oxygen concentration and formation of Al–Ti intermediate alloy at the GaN/Ti interface, resulting in a reduced barrier and enhanced electron transport at the contacts. However, despite these small changes, results indicate that the AlGaN/AlN/GaN Hall sensor provides stable performance for as long as 2800 h thermal aging at 200 °C. [ABSTRACT FROM AUTHOR]

The search for contact materials with low contact resistance and tunable Schottky barrier (SB) height of two-dimensional (2D) materials is important for improving the electronic performance. Inspired by the recently synthesized metallic Janus MoSH, this study employs first-principles calculations to investigate the electronic structure, mechanical properties, and interface characteristics of Janus MoSH/GaN and MoHS/GaN van der Waals (vdW) heterostructures. We find that both heterostructures exhibit isotropic mechanical properties and form p-type Schottky barrier contacts (p-ShC) and the SB height of MoHS/GaN is smaller than that of the MoSH/GaN heterostructure. The variation in SB height and contact type under biaxial strain and electric field is also studied for both vdW heterostructures, respectively. Compared to the MoSH/GaN heterostructure, the MoHS/GaN heterostructure can transition to Ohmic contact (OhC) under biaxial strain and electric field, making the S-face contact of MoSH with GaN a more effective contact approach. These findings could provide a new pathway for the design of controllable Schottky nanodevices and high-performance electronic devices on GaN-based vdW heterostructures. [ABSTRACT FROM AUTHOR]

In an interconnected high-vacuum illustration system, the surfaces of p-InGaN/GaN heterostructures grown with integrated metalorganic chemical vapor deposition were treated in O2 gas for different times at room temperature and then transferred to another chamber for fabricating ohmic contacts via sputtering Pd/Pt/Au multi-layers. X-ray photoelectron spectroscopy measurements unveil that the proportions of Ga–O of the treated samples significantly increase compared with that of the as-grown sample, indicating that a thin layer of GaOx forms on the p-InGaN/GaN surface after exposing to oxygen or air atmospheres. Meanwhile, the samples exposed to O2 or air were found to have much higher specific contact resistance, i.e., higher by two orders of magnitude than that of the as-grown sample. The specific contact resistance of the as-grown sample was derived as 9.3 × 10−5 Ω cm2 using the circular transmission line measurement. Furthermore, the Schottky barrier height of the samples was determined from the measured I–V curves with the thermionic field emission model and was revealed to be closely related to surface treatments. Despite the fact that the insulating layer of GaOx was as thin as 1.2–1.4 Å for the samples exposed to oxygen at room temperature, it can act as an extra barrier layer causing significant increase in the specific contact resistance via blocking the tunneling of carriers. Therefore, the effective removal of p-InGaN surface oxide plays a vital role in preparing good ohmic contacts. [ABSTRACT FROM AUTHOR]

The effects of the sequence of technology steps of electrical contact formation between carbyne layers and metal electrodes (gold, platinum) on contact parameters were explored. Enhancements in contact parameters were achieved through thermal annealing of the samples. Contact parameters were measured by transmission line method (TLM) and impedance spectroscopy after annealing at atmospheric conditions. Lowering of contact resistivity and sheet resistance of the carbyne layer after annealing was observed for temperatures up to 150∘C for palladium contacts and up to 100∘C for gold contacts. It was found that exceeding these temperatures is not recommended, as higher annealing temperatures led to a reduction in the sheet resistance of the carbyne layer. Based on these findings, it can be concluded that the electrical losses at metal contacts of carbyne-based devices, with Au or Pd metallization, can be reduced through annealing. This is particularly critical in carbyne-based gas sensors, where decreasing contact resistance enhances sensitivity. [ABSTRACT FROM AUTHOR]

Ultrathin ferroelectric tunnel junctions (FTJs) hold considerable promise for next‐generation, high‐speed, low‐power, and high‐density nonvolatile memory applications. Achieving a substantial tunneling electro‐resistance (TER) remains a challenge as the ferroelectric layer is thinned to nanoscale dimensions, often resulting in a diminished or lost polarization. An innovative interface barrier gain mechanism is introduced, employing interface electronic state modulation to precisely control the size of an additional interface barrier. This strategy lessens the dependency of the tunneling barrier on ferroelectric polarization strength, facilitating a remarkable TER even at ferroelectric thicknesses as minimal as ≈1 nm. The focus is on composite FTJs using In2Se3/MTe2 (M = Mo, W), where the inclusion of an MTe2 monolayer disrupts the asymmetric electrode configuration. The weak ferroelectric polarization reversal of the In2Se3 monolayer effectively modulates the electronic state coupling at the In2Se3/MTe2 interface. This modulation leads to variations in the width and height of the Schottky barrier at the heterojunction‐electrode interface corresponding with the ferroelectric polarization reversal, establishing a beneficial Ohmic contact in the “on” state and resulting in an exponential TER increase up to 5.4 × 106%. This work introduces a universal mechanism to overcome the thickness limitations traditionally associated with enhancing TER, marking a significant advancement in the development of ultrathin ferroelectric nonvolatile devices. [ABSTRACT FROM AUTHOR]

Effective Ohmic contact between metals and their conductive channels is a crucial step in developing high-performance Ga2O3-based transistors. Distinct from bulk materials, excess thermal energy of the annealing process can destroy the low-dimensional material itself. Given the thermal budget concern, a feasible and moderate solution (i.e., Ar-containing plasma treatment) is proposed to achieve effective Ohmic junctions with (100) β-Ga2O3 nanosheets. The impact of four kinds of plasma treatments (i.e., gas mixtures SF6/Ar, SF6/O2/Ar, SF6/O2, and Ar) on (100) β-Ga2O3 crystals is comparatively studied by X-ray photoemission spectroscopy for the first time. With the optimal plasma pre-treatment (i.e., Ar plasma, 100 W, 60 s), the resulting β-Ga2O3 nanosheet field-effect transistors (FETs) show effective Ohmic contact (i.e., contact resistance RC of 104 Ω·mm) without any post-annealing, which leads to competitive device performance such as a high current on/off ratio (>107), a low subthreshold swing (SS, 249 mV/dec), and acceptable field-effect mobility ( μ e f f , ~21.73 cm2 V−1 s−1). By using heavily doped β-Ga2O3 crystals (Ne, ~1020 cm−3) for Ar plasma treatments, the contact resistance RC can be further decreased to 5.2 Ω·mm. This work opens up new opportunities to enhance the Ohmic contact performance of low-dimensional Ga2O3-based transistors and can further benefit other oxide-based nanodevices. [ABSTRACT FROM AUTHOR]

Sb2S3 has been extensively used as light absorber for photoelectrochemical cell. However, its p‐type nature may result in the formation of Schottky junction with substrates, thus hindering the collection of photogenerated holes. Herein, an ultrathin CuxS layer is successfully engineered as the bottom junction for Sb2S3 for the first time. Capitalizing on its impressive electrical properties and superior optical properties, the CuxS layer exhibits a high work function of 4.90 eV, which causes the upward band bending of p‐type Sb2S3, forming a hole‐transparent structure with ohmic contact. The transparency of the ultrathin CuxS layer enables back‐illumination of the Sb2S3/CuxS platform, facilitating the integration of intricate catalyst layers for photoelectrochemical transformation. When modified with Pt nanoparticles, the photocurrent density reaches −5.38 mA cm−2 at 0 V vs. RHE, marking a fourfold increase compared to the photocathode without CuxS layer. When introducing a molecular hybrid TC‐CoPc@carbon black, a remarkable average photocurrent density of −0.44 mA cm−2 at the overpotential of 0 V is obtained for CO2 reduction reaction, while the photocurrent density is less than −0.03 mA cm−2 without CuxS. [ABSTRACT FROM AUTHOR]

In this Letter, an enhancement mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) with quasi-two-dimensional channel was reported, and the channel mobility of 147.5 cm2/(V·s) is achieved. Low damage etching technology and low Ohmic contact resistance technology are introduced. As a result, the E-mode transistor demonstrates a maximum drain to source current (ID) of 230.5 mA/mm, a peak transconductance (Gm) of 54.2 mS/mm, a current gain cut-off frequency (fT) of 18 GHz, and a power gain cut-off frequency (fMAX) of 42 GHz. Additionally, a positive threshold voltage (VT) of 1.65 V, a breakdown voltage (VBK) of 420 V, and a specific on-resistance (RON,SP) of 1.24 mΩ·cm2 are achieved. Moreover, a fMAX × VBK of 17.64 THz·V and a fT × VBK of 7.56 THz·V are found to be a close value so far to the theoretical limit of β-Ga2O3. This device leads to excellent radio frequency (RF) characteristics, which paved the way for future millimeter-wave RF power electronics applications with β-Ga2O3 MOSFET. [ABSTRACT FROM AUTHOR]

Constructing heterostructures from already synthesized two-dimensional materials is of significant importance. We performed a first-principles study to investigate the electronic properties and interfacial characteristics of Janus MoSH/WSi2N4 van der Waals heterostructure (vdWH) contacts. We demonstrate that the p-type Schottky formed by MoSH/WSi2N4 and MoHS/WSi2N4 has extremely low Schottky barrier heights (SBHs). Due to its excellent charge injection efficiency, Janus MoSH may be regarded as an effective metal contact for WSi2N4 semiconductors. Furthermore, the interfacial characteristics and electronic structure of Janus MoSH/WSi2N4 vdWHs can not only reduce/eliminate SBH, but also forms the transition from p-ShC to n-ShC type and from Schottky contact (ShC) to Ohmic contact (OhC) through the layer spacing and electric field. Our results can offer a fresh method for optoelectronic applications based on metal/semiconductor Janus MoSH/WSi2N4 vdW heterostructures, which have strong potential in optoelectronic applications. [ABSTRACT FROM AUTHOR]

Recently, rhenium (Re) based ohmic contacts to GaN have been studied for their low resistivity, smooth surface morphology, and sharp edge acuity at low annealing temperatures. In this work, we discuss the evolution of surface microstructures for Re‐Al‐Ni‐Au ohmic contacts on n‐GaN as a function of Re layer thickness and annealing temperature. For all Re thicknesses, the Al and Ni segregate into agglomerates that increase in size with increasing annealing temperature. These agglomerates are surrounded by Al‐Au films. Along with the underlying Re layer, they form different crystallographic phases of Re‐Al‐Ni, Al6Re, AlAu2, and Al2Au5. This, along with the formation of Re‐N phases at the metal‐semiconductor interface leads to low resistivity ohmic contacts on n‐GaN. Investigating the evolution of the contact microstructure is an important step in understanding the behavior of the Re‐based ohmic contact system. [ABSTRACT FROM AUTHOR]

Considering the synthesis of novel 2D monolayers such as W8Se12, which are ideal for nanoelectronics, in this study, density‐functional theory is utilized to examine M8X12/G (M = Mo, W; X = S, Se) van der Waals heterostructures (vdWHs). Herein, the crucial role of intrinsic Ohmic contacts and Schottky barrier heights (SBH) at metal/semiconductor interfaces in these heterojunctions, which are vital for efficient current flow and minimal resistance, and their impact on high‐performance electronic and bipolar device applications are focused on. In these findings, it is revealed that W8Se12/G forms an Ohmic contact with a 75.4% tunneling probability, while Mo8S12/G, W8S12/G, and Mo8Se12/G develop n‐type Schottky contacts with remarkably low SBHs of 0.110, 0.136, and 0.064 eV, respectively. The adaptability of these Schottky barriers is demonstrated by modifying the interlayer distance or applying an electric field, leading to transitions from n‐type to p‐type contacts. Additionally, mechanical strain influences the contact type, offering valuable insights for future nanoelectronic and bipolar device technologies. This comprehensive analysis underlines the versatile electronic behavior of M8X12/G vdWHs, highlighting their potential in advancing nanoelectronic devices. [ABSTRACT FROM AUTHOR]

The study aimed to investigate the underlying physics limiting the temperature stability and performance of non-surface passivated Al0.34Ga0.66N/GaN Hall effect sensors, including contacts, under atmospheric conditions. The results obtained from analyzing the microstructural evolution in the Al0.34Ga0.66N/GaN Hall sensor heterostructure were found to correlate with the electrical performance of the Hall effect sensor. High-resolution x-ray photoelectron spectroscopy studies revealed the signature of surface oxidation in the GaN cap layer, as well as a slight out-diffusion of "Al" from the AlGaN barrier layer. To prevent the formation of a bumpy surface morphology at the Ohmic contact, we investigated the impact of "Pt" top Ohmic contacts. The application of a top "Pt" contact stack resulted in a smooth Ohmic contact surface and provided evidence that the bumpy surface morphology in Au-based Ohmic contacts is due to the formation of an Al-Au viscous alloy during rapid thermal annealing. In the early stages of thermal aging, the small drop in contact resistivity stabilized with subsequent thermal aging past the initial 550 h at 200 °C. The outcome is that the Al0.34Ga0.66N/GaN Hall effect sensors, even without surface passivation, exhibited a stable response to applied magnetic fields with no sign of significant degradation after 2800 h of thermal aging at 200 °C under atmospheric conditions. This observed stability in the Hall sensor without surface passivation can be attributed to a self-imposed surface oxidation of the cap layer during the early stages of aging, which serves as a protective layer for the device during subsequent extended periods of thermal aging at 200 °C. [ABSTRACT FROM AUTHOR]

This study introduces a method for creating Ohmic contacts to tin oxide (SnO2) by subjecting the sample surface to hydrogen plasma treatment at moderate temperatures of about 300 °C. This process generates a surface layer of metallic tin droplets, forming suitable electrical contacts. The contacts exhibit remarkable durability and demonstrate Ohmic behavior down to liquid helium temperatures. [ABSTRACT FROM AUTHOR]

Introduction: Traps at the interface between carbyne and palladium nanocoatings, produced at different growth conditions, are explored by currentvoltage characteristics, scanning electron microscopy and thermal stimulation of charges for evaluation of their nature. It was found that the Pd films can form an Ohmic contact with the carbyne at certain deposition conditions and such deviated from the Ohmic behavior according to the RF sputtering voltage. This growth parameter was found to affect the interfacial traps formation on the carbyne surface, which is important feature for the charge trapping and releasing properties for hydrogen isotopes in the context of the energy release applications. Methods, Results and Discussion: The sputtering voltages of 0.5 kV and 0.7 kV were found unsuitable for controlled trap formation. Based on the currentvoltage and thermally stimulated current (TSC) measurements, a sputtering voltage of 0.9 kV appeared to be more favorable compared to 0.5 kV and 0.7 kV. At 0.9 kV thermal activation of charge carriers are enabled at lower thermal energies, showing a distinct change in TSC behavior correlated to trap activation. [ABSTRACT FROM AUTHOR]

Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0–100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes. [ABSTRACT FROM AUTHOR]

Regrown Ohmic contacts have been widely studied for high millimeter-wave applications. However, few were applied to InAl(Ga)N-based HEMT despite the lattice match benefits with GaN channel because of the poor thermal stability of the quaternary barrier. In this article, we use relatively low temperature (850 °C) MOVPE technique for the regrowth of heavily Si doped GaN (1 × 1020 cm−3) to avoid deterioration of the channel's electrical characteristics. Moreover, high selectivity of the regrowth is obtained, thanks to large opening ratio of the hard mask. The state-of-the-art total Ohmic contact resistance Rc = 0.06 Ω mm is reached with high homogeneity on a 4-in. wafer. This result reflects the combined contribution of the doped GaN interfaces with both the metal contact and the channel. 2 × 50 μm transistors featuring 100 nm gate length with regrown Ohmic contacts present remarkable improvements of DC and RF performances. At 40 GHz, the highest Power Added Efficiency (PAE) of 54% is attained at an output power of 3.8 W mm−1, while the maximum output power of 9.4 W mm−1 is achieved at a PAE of 48%, corresponding to bias voltages of 15 and 30 V, respectively. [ABSTRACT FROM AUTHOR]

Emerging millimeter‐wave wireless communication systems require high‐performance radio frequency switches to support advanced functionality such as frequency agility, circuit reconfigurability, and beamforming. Ferroelectric (FE)‐gated AlGaN/GaN high‐electron‐mobility transistors (HEMTs) (FeHEMTs) are developed and demonstrated as a technology option for this important role. AlGaN/GaN HEMT heterostructures grown by metal‐organic chemical vapor deposition are augmented with a FE gate stack comprising atomic layer deposition‐grown HfZrO2. In addition, highly doped regrown source and drain Ohmic contacts are integrated into an improved fabrication process flow. This improved process leads to contact resistances of 0.105 Ω mm and a reduction in switch on‐resistance as compared to prior reports, as well as drain current densities of 1 A mm−1 and measured ft = 54 GHz for gate lengths of 0.1 μm. The improved contact and gate length scaling makes FeHEMTs a promising candidate for mm‐wave switch applications achieving a reported switch figure of merit of fCO = 1.55 THz. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) semiconductors are considered one of the most promising channel materials in devices for the future development of integrated circuits with low power consumption and high integration. As the size of the device gradually decreases, a key challenge is to reduce the contact resistance of nanoscale devices. Doping is a crucial strategy to realize low contact resistances in 2D devices, but there is still lack of simple and compatible doping methods. Here, we report a simple and localized doping strategy that adopts an ultrathin lithium phosphorus oxynitride (LiPON) as the buffer layer of electrodes to reduce the contact resistance of MoS2 transistors. This ultrathin buffer layer induces strong n-doping in the electrode contact area, thereby achieving nearly Ohmic contact in the devices. The contact resistances of LiPON/Ti/Au electrodes for different channel carrier densities are all lower than those of Ti/Au electrodes because the Schottky barrier height (SBH) for the LiPON/Ti/Au electrodes is only 8% of the value for the Ti/Au electrodes. This work provides a simple and compatible strategy for the development of high-performance 2D devices and deepens the understanding of the important role of doping in 2D electrical contacts. [ABSTRACT FROM AUTHOR]

In this paper, the contact resistance of AlGaN/GaN high electron mobility transistor (HEMT) was improved by introducing nanoscale hole arrays in ohmic regions, and the DC characteristics of the conventional structure and nanohole etching structure for HEMTs were measured for comparison. Sub-10 nm nanoholes were patterned on the ohmic area surface of AlGaN using electron beam lithography and a low-temperature short-time development. Various dwell times of e-beam exposure from 5 to 30 μs were investigated and the corresponding contact resistance of the nano hole etching structure and planar structure were compared by the transmission line model (TLM) method. We observed a reduced contact resistance from 1.82 to 0.47 Ω-mm by performing a dwell time of 5 μs of exposure for nanohole formation compared to the conventional structure. Furthermore, the DC characteristics demonstrate that the maximum drain current for HEMTs was enhanced from 319 to 496 mA/mm by utilizing this optimized ohmic contact. These results show that devices with sub-10 nm nanohole ohmic contacts exhibit an improved contact resistance over the conventional structure, optimizing device performance for HEMTs, including a lower on-resistance and higher maximum drain current. [ABSTRACT FROM AUTHOR]

A field-effect photodetector structure composed of an Al2O3-encapsulated bilayer graphene conductive channel attached to an Al2O3 dielectric layer deposited on a HgCdTe absorbing layer on CdTe/Si <211> was studied. Ti/Au ohmic contacts to the graphene layer were used as drain and source electrodes and back-gate voltage was applied to the Si substrate. It was demonstrated that 80% and 10% modulation of the graphene channel conductivity can be achieved under blue (50 W/cm2) and infrared (IR) (0.02 W/cm2) illumination, respectively, at a gate voltage of 7 V. Detector responsivity was measured as 406 A/W and 1.83 A/W under IR lamp and 405-nm laser irradiation, respectively, with corresponding gain values of 340 and 5.6. The detectivity of the 4 × 4 photodetector arrays was on the order of 1010 Jones for the mid-wave infrared wavelength range (3–5 μm). [ABSTRACT FROM AUTHOR]

The Schottky contact between metal electrode and armchair graphene nanoribbon (AGNR) plays a fundamental role in limiting the current flow as well as the overall device characteristics. To improve device performance, the metal electrode must be engineered to lower barrier height and allow low‐resistance ohmic contact. Nevertheless, in most cases, this gives rise to interfacial states which dictate the contact properties and induce Fermi level pinning. Herein, another strategy to form robust and transparent 7‐atom‐wide‐AGNR (7‐AGNR)/Au contacts in which a direct CAu σ bond is initialized by the tip of scanning tunneling microscope (STM) on a dehydrogenated terminus is demonstrated. This process has led to a total lift‐off of 7‐AGNR from the Au(111) substrate and allowed us to visualize the details of the band structure. Furthermore, it is found that GNR is useful as an STM tip for high‐resolution selective imaging of edge states showing a unique interference pattern with a periodicity that coincides with half of Fermi wavelength of GNR lattice. The combination of imaging and tunneling spectroscopy with GNR‐tip is promising for unraveling intrinsic details in the band structure which are of fundamental importance to understand the transport properties of GNRs devices. [ABSTRACT FROM AUTHOR]

Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This Letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The composition includes Al as the reactive top electrode connecting the device columns and Gd1−xCaxMnO3 (GCMO, x = 0.8) serving as the bottom electrode connecting the device rows as well as the memristive material eliminating the need for additional layers and fabrication steps. Controlled-sized vias through insulating the Al2O3 layer connect the electrodes forming the active interface. The idea is validated with a test sample of 3 × 3 crossbars with the Au/GCMO/Al structure, Au enabling Ohmic contact to GCMO, with device resistive switching ratios mostly around 102 and yield of over 90%. The devised crossbar structure could provide a highly scalable, yet simple, geometry suitable for synaptic networks. [ABSTRACT FROM AUTHOR]

Herein, the electrical characteristics and Schottky barrier of Ni/Au and Ni/Ag contacts on the GaN/AlGaN/GaN heterojunction are investigated. Both contacts on the p‐GaN contact layer (Mg: ≈3 × 1019 cm−3) exhibit weak Schottky characteristics. The nonlinear current–voltage (I–V) characteristics are observed, leading to variations in contact resistance (RC) and sheet resistance (Rsh) with changing bias voltage. The Ni/Ag contact achieves a lower Schottky barrier height calculated by using the I–V method. Furthermore, when employing a p++‐GaN layer (Mg: ≈1 × 1020 cm−3) as the contact layer, the Ni/Ag contact forms an Ohmic contact without Schottky characteristics, achieving a satisfactory RC of 30.31 Ω mm. This result demonstrates its viability as a competitive candidate for p‐channel field‐effect transistors’ fabrication. [ABSTRACT FROM AUTHOR]

Influence of the barrier layer on the electrical properties of V/Al-based Ohmic contact is investigated by comparing the surface morphology and alloying results of V/Al/Ni/Au (with barrier Ni) and V/Al/Cr/Au (with barrier Cr) contacts on n-AlGaN (Al molar fraction>60%) after 850 °C annealing. Due to the clustering of Ni during annealing, a thin Al layer (AlOx) and a number of Al-Au alloy clusters are formed at the contact interface of n-AlGaN, which increases the contact resistance of the V/Al/Ni/Au Ohmic contacts. In contrast, the annealed V/Al/Cr/Au electrodes cover the surface uniformly, which not only contributes to the increased contact area, but also suppresses the formation of high resistance products. Thanks to the Cr barrier layer, the specific contact resistivity of V/Al-based Ohmic contact is reduced by 26%. [ABSTRACT FROM AUTHOR]

Due to the lower cost compared to screen-printed silver contacts, the Ni/Cu/Ag contacts formed by plating have been continuously studied as a potential metallization technology for solar cells. To address the adhesion issue of backside grid lines in electroplated n-Tunnel Oxide Passivating Contacts (n-TOPCon) solar cells and reduce ohmic contact, we propose a novel approach of adding a Ni/Si alloy seed layer between the Ni and Si layers. The metal nickel layer is deposited on the backside of the solar cells using electron beam evaporation, and excess nickel is removed by H2SO4:H2O2 etchant under annealing conditions of 300–425 °C to form a seed layer. The adhesion strength increased by more than 0.5 N mm−1 and the contact resistance dropped by 0.5 mΩ cm2 in comparison to the traditional direct plating Ni/Cu/Ag method. This is because the resulting Ni/Si alloy has outstanding electrical conductivity, and the produced Ni/Si alloy has higher adhesion over direct contact between the nickel–silicon interface, as well as enhanced surface roughness. The results showed that at an annealing temperature of 375 °C, the main compound formed was NiSi, with a contact resistance of 1 mΩ cm−2 and a maximum gate line adhesion of 2.7 N mm−1. This method proposes a new technical solution for cost reduction and efficiency improvement of n-TOPCon solar cells. [ABSTRACT FROM AUTHOR]

We investigated the optimization effects of KOH solution treatment and SiN x sacrificial layer treatment on the contact characteristics of V/Al/Ni/Au on plasma-etched n-AlGaN. The results showed that the contacts on n-Al0.5Ga0.5N with both surface treatments are truly Ohmic in nature, while the contacts on untreated plasma-etched samples are still rectifying. Surface atomic concentration analysis revealed that both surface treatment methods effectively reduced the nitrogen vacancies on n-AlGaN induced by plasma etching, which mostly act as acceptor-like states, leading to severe compensation and hindering of the formation of Ohmic contact. Moreover, the operating voltage was reduced by 0.9 V at 20 mA for 285 nm ultraviolet light-emitting diodes, demonstrating that the surface treatment could work well for plasma-etched n-AlGaN Ohmic contacts. [ABSTRACT FROM AUTHOR]

Two‐dimensional Materials (2DMs) offer significant promise for advancing device miniaturization and extending Moore's law. Despite the challenges posed by high contact resistance in transistors, recent discoveries highlight semimetals as an effective approach for achieving ohmic contact with near‐quantum‐limit contact resistance. The energy band hybridization between semimetal and MoS2 is found to create degenerate states and heavily doped contact, which is proposed as the underlying mechanism responsible for reducing contact resistance. However, a quantitative and comprehensive characterization of the semimetal‐MoS2 interface is lacking, leaving the physical interactions elusive. This study reveals that semimetals induce n‐type doping and tensile strain in monolayer MoS2 grown using CVD, which serve as the contact resistance and mobility boosters. Among the semimetals investigated, including Bismuth (Bi), Antimony (Sb), and their alloy, Bi results in the highest electron doping of 2 × 1013 cm−2 and a 0.5% tensile strain, leading to reduced contact resistance and enhanced mobility. First‐principles calculations and spectroscopy measurements unveil the impact of electron doping and strain in MoS2, and the thermal effects are subsequently explored. This research underscores the potential of semimetals in boosting device performance and lays the foundation for reducing contact resistance in transistors made from 2D materials. [ABSTRACT FROM AUTHOR]

A step-by-step description of the technique for manufacturing various van der Waals heterostructures is provided. First, the procedure to obtain monolayer and few-layer flakes from layered materials, in particular graphite and hexagonal boron nitride, is discussed. Next, different approaches to their assembly depending on the required final structure are considered. Finally, the procedure for making ohmic contacts is described in detail and the parameters for plasma chemistry and metal deposition are given. The field effect is discovered in transport measurements carried out at various temperatures, but a number of features, such as a strong shift of the charge neutral point from the zero-gate voltage, a large resistance away from the charge neutral point, and a low mobility, indicate a poor quality of the resulting devices. Nevertheless, one of the fabricated devices demonstrates good quality: the maximum mobility is estimated as 15 000 cm2/(V s), and the magnetic field dependences demonstrate the quantum Hall effect that is standard for high-quality graphene. Unexpectedly, scanning electron microscope images of the resulting devices reveal a large amount of contamination on the surface of the flakes, which may explain the corresponding quality of our devices. Preliminary results of flakes cleaning with chemical compounds and thermal treatment are presented. [ABSTRACT FROM AUTHOR]

The cathode interlayer (CIL) plays a crucial role in organic solar cells (OSCs), which can establish an Ohmic contact between the active layer and the electrode, lower the electron extraction barriers, and minimize the charge carrier recombination. The CIL modification is a useful strategy for improving the performance of OSCs. Herein, an inexpensive water–alcohol‐soluble material known as L‐Arginine (L‐Arg) is introduced as a modifier for the PFN‐Br CIL, leading to successful optimization of the CIL quality. Following L‐Arg modification, the work function of the CIL is lowered and the electron extraction is facilitated. L‐Arg assists in exciton dissociation while suppressing both bimolecular and trap‐assisted recombination processes. The modified CIL establishes superior contact with the metal electrode due to its enhanced hydrophilicity, which helps electron collection. Consequently, the average power conversion efficiency increases from 10.54% in the reference device to 11.17% in the optimally doped device. [ABSTRACT FROM AUTHOR]

This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable up to 500 °C during short term (approximately 1 h) testing, while alloyed contacts appear to decrease in contact resistance from 300 to 500 °C though increases in the error bounds due to increase sheet resistance make it difficult to conclude definitely. Additionally, longer term testing shows both technologies remain stable at least up to 48 h at 500 °C, after which the large increase in sheet resistance makes the measurement uncertainty too large to conclude definitively. Advanced microscopy images indicate both the regrown and alloyed contact regions remain structurally intact after prolonged high temperature exposure with no visible degradation in crystallinity or metal composition. [ABSTRACT FROM AUTHOR]

Intensive research has been carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance field effect transistors for integrated circuits1. Fabricating transistors with ohmic contacts is a challenging task due to the formation of a high Schottky barrier that severely limits the performance of the transistors for real-world applications. Graphene-based heterostructures can be used in addition to, or as a substitute for unsuitable metals. In this paper, we present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene achieving a low contact resistances of about 9 kΩ·µm and high on/off current ratios of 108. Furthermore, we also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a substantial performance enhancement by means of layer optimizations that would make transistors promising for use in future logic integrated circuits. [ABSTRACT FROM AUTHOR]

Transparent electronics is a burgeoning field with exciting potential for next‐generation "see‐through" devices. The creation of high‐performance fully transparent ultraviolet photodetectors (PDs) is essential for enabling wearable and portable applications. In this study, metal–semiconductor–metal (MSM) type Al‐doped ZnO (AZO)/GaN/AZO and indium tin oxide (ITO)/GaN/ITO‐transparent ultraviolet PDs, are initially designed, utilizing AZO‐ and ITO‐transparent conductive electrodes. In these investigations, it is revealed that AZO and ITO form Ohmic and Schottky contacts, respectively, with GaN. Subsequently, building on these findings, a fully transparent Schottky barrier photodiode (SBPD) is developed for ultraviolet photodetection using AZO/GaN/ITO. The SBPD displays a high responsivity (R) of 1.41 × 103 A W−1, a detectivity (D*) of 6.85 × 1014 Jones, and a photo‐to‐dark current ratio exceeding 1 × 104 at a − 5 V bias. Furthermore, the SBPD demonstrates an ultrahigh responsivity of 1.18 A W−1 at 0 V bias, indicating its potential as a self‐powered device under extreme conditions. In these results, the tremendous potential of the high‐performance and fully transparent GaN‐based SBPD is demonstrated for environmental monitoring, optical communication, military radar, and other fields. [ABSTRACT FROM AUTHOR]

Achieving low resistance ohmic connections is one of the significant factors in improving the performance of optoelectric and semiconductor devices. In this work, we examined the decrease in specific contact resistance (ρc) after high-temperature annealing and vanadium thickness variation on an n-type AlGaN epitaxial layer with a high aluminum concentration (75%). To measure it, we prepared rectangular transmission line model electrodes and measured the specific contact resistance at annealing temperatures ranging between 800 and 950 °C. The results showed that the minimum specific contact resistance achieved was 4.12 × 10−2 Ω cm2 at an annealing temperature of 850 °C, which was two times lower compared to that of surface contact mode. It is also demonstrated how the contact resistance of the epitaxial n-type AlGaN layer varies as the vanadium thickness changes from 2 to 15 nm. [ABSTRACT FROM AUTHOR]

Microelectromechanical systems (MEMS) ohmic contact switches are considered to be a promising candidate for wireless communication applications. The longevity of MEMS switches is directly related to the reliability and performance of microcontacts. In this work, an improved microcontact test fixture with high actuation rates (KHz) and highly precise position control (nm) and force (nN) control was developed. Here, we collected microcontact performance data from initial contact tests (ICT) and microcontact reliability data from cold switched tests (CST). To perform these tests with our test fixture, we fabricated MEMS microcontact test structures with relatively high Young's modulus electroplated Nickel (Ni)-based, fixed–fixed beam structure with Au/RuO2 bimetallic microcontacts. These structures were characterized for forces ranging from 200–1000 µN in ICT tests. In a CST test, the tested microcontact survived more than 200 million cycles at a 1 KHz cycle rate, with a stable contact resistance value ranging between 3.8–5.2 Ω. These experiments validate the potentiality of our microcontact test fixture, and will facilitate further investigation on advanced microcontacts to enhance the MEMS switch's reliability. [ABSTRACT FROM AUTHOR]

The transport properties of molecular devices based on carbon chains are systematically investigated using a combination of non-equilibrium Green's function (NEGF) and density functional theory (DFT) first-principle methods. In single-carbon-chain molecular devices, a distinct even–odd behavior of the current emerges, primarily influenced by the density of states (DOS) within the chain channel. Additionally, linear, monotonic currents exhibit Ohmic contact characteristics. In ladder-shaped carbon-chain molecular devices, a notable current stabilization behavior is observed, suggesting their potential utility as current stabilizers within circuits. We provide a comprehensive analysis of the transport properties of molecular devices featuring ladder-shaped carbon chains connecting benzene-ring molecules. The occurrence of negative differential resistance (NDR) in the low-bias voltage region is noted, with the possibility of manipulation by adjusting the position of the benzene-ring molecule. These findings offer a novel perspective on the potential applications of atom chains. [ABSTRACT FROM AUTHOR]

A SiC fin-channel MOSFET structure (Fin-MOS) is proposed for an enhanced gate shielding effect. The gates are placed on each side of the narrow fin-channel region, while grounded p-shield regions below the gates provide a strong shielding effect. The device is investigated using Sentaurus TCAD. For a narrow fin-channel region, there is difficulty in forming an Ohmic contact to the p-base; a floating p-base might potentially store negative charges upon high drain voltage, and, thus, causes threshold voltage instabilities. The simulation reveals that, for a fin-width of 0.2 μm, the p-shield regions provide a stringent shielding effect against high drain voltage, and the dynamic threshold voltage shift (∆Vth) is negligible. Compared to conventional trench MOSFET (Trench-MOS) and asymmetric trench MOSFET (Asym-MOS), the proposed Fin-MOS boasts the lowest OFF-state oxide field and reverse transfer capacitance (Crss), while maintaining a similar low ON-resistance. [ABSTRACT FROM AUTHOR]

The 2D ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here, the concept of metal/semiconductor (MS) contact into the realm of valleytronics is generalized. A half‐valley Ohmic contact is proposed based on FVSC/graphene heterostructure, where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley‐selectively injected through the 'Ohmic' valley while being blocked in the 'Schottky' valley. A theory of contact‐limited valley‐contrasting current injection is developed and such transport mechanism can produce gate‐tunable valley‐polarized injection current. Using RuCl2/graphene heterostructure as an example, a device concept of valleytronic barristor is illustrated, where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact‐limited valley‐contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology. [ABSTRACT FROM AUTHOR]

Low‐resistivity Ohmic contacts to Gallium‐face (G‐aface) and/or Nitrogen‐face (‐Nface) n‐GaN are undoubtedly needed for high‐quality vertical power devices. Contrary to Ga‐face n‐GaN, for which the Ohmic contact formation is a well‐established process, the formation of low‐resistivity Ohmic contacts to N‐face n‐GaN is much more difficult due to the different surface properties. Despite many efforts, obtaining low‐resistivity ohmic contacts, with ρc < 1 × 10−5 Ω cm2 to N face n‐GaN, still remains difficult to achieve. Herein, results of fabrication and characterization of Ti/Al/TiN/Au ohmic contacts to Ga‐ and N‐face n‐GaN for vertical power devices are presented. The optimum annealing temperature is examined and it is noticed that Ohmic contacts to Ga‐face n‐GaN (n ≈ 5 × 1018 cm−3 , 200 nm on bulk GaN substrate) are formed after 550 °C annealing and continuously lower their ρc up to temperature of 750 °C for which ρc is ≈1.86 × 10−6 Ω cm2. Ohmic contact to N‐face n‐GaN (bulk ammonothermally grown substrate, ρ ≈ 10−3–10−2 Ω cm2) becomes quasilinear after annealing at 650 °C and becomes linear after annealing at 700 °C, reaching a minimum value of ρc 6 × 10−6 Ω cm2. Further annealing at higher temperaturesincreases the contact resistivity to the value of ≈5.8 × 10−5 cm2 for annealing at 800 °C. The electrical measurements results were accompanied with the results of structural characterization for determination of Ohmic contact formation mechanism. [ABSTRACT FROM AUTHOR]

The critical impact of sodium-doped molybdenum (MoNa) in shaping the MoSe2 interfacial layer, influencing the electrical properties of CIGSe/Mo heterostructures, and achieving optimal MoSe2 formation conditions, leading to improved hetero-contact quality. Notably, samples with a 600-nm-thick MoNa layer demonstrate the highest resistivity (73 μΩcm) and sheet resistance (0.45 Ω/square), highlighting the substantial impact of MoNa layer thickness on electrical conductivity. Controlled sodium diffusion through MoNa layers is essential for achieving desirable electrical characteristics, influencing Na diffusion rates, grain sizes, and overall morphology, as elucidated by EDX and FESEM analyses. Additionally, XRD results provide insights into the spontaneous peeling-off phenomenon, with the sample featuring a ~ 600-nm MoNa layer displaying the strongest diffraction peak and the largest crystal size, indicative of enhanced Mo to MoSe2 conversion facilitated by sodium presence. Raman spectra further confirm the presence of MoSe2, with its thickness correlating with MoNa layer thickness. The observed increase in resistance and decrease in conductivity with rising MoSe2 layer thickness underscore the critical importance of optimal MoSe2 formation for transitioning from Schottky to ohmic contact in CIGSe/Mo heterostructures. Ultimately, significant factors to the advancement of CIGSe thin-film solar cell production are discussed, providing nuanced insights into the interplay of MoNa and MoSe2, elucidating their collective impact on the electrical characteristics of CIGSe/Mo heterostructures. [ABSTRACT FROM AUTHOR]